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    Phase change material electronic memory structure and method for forming
    1.
    发明授权
    Phase change material electronic memory structure and method for forming 失效
    相变材料电子记忆体结构及其形成方法

    公开(公告)号：US06605821B1

    公开(公告)日：2003-08-12

    申请号：US10142494

    申请日：2002-05-10

    申请人： Heon Lee ,  Dennis Lazaroff ,  Neal Meyer ,  Jim Ellenson ,  Ken Kramer ,  Kurt Ulmer ,  David Pursalan ,  Peter Fricke ,  Andrew Koll ,  Andy Van Brockin

    发明人： Heon Lee ,  Dennis Lazaroff ,  Neal Meyer ,  Jim Ellenson ,  Ken Kramer ,  Kurt Ulmer ,  David Pursalan ,  Peter Fricke ,  Andrew Koll ,  Andy Van Brockin

    IPC分类号： H01L2902

    CPC分类号： H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/1675 ,  Y10S438/90

    摘要： The invention includes an electronic memory structure. The electronic memory structure includes a substrate. A substantially planar first conductor is formed adjacent to the substrate. An interconnection layer is formed adjacent to the first conductor. A phase change material element is formed adjacent to the interconnection layer. The interconnection layer includes a conductive interconnect structure extending from the first conductor to the phase change material element. The interconnect structure includes a first surface physically connected to the first conductor. The interconnect structure further includes a second surface attached to the phase change material element. The second surface area of the second surface is substantially smaller than a first surface area of the first surface. A substantially planar second conductor is formed adjacent to the phase change material element.

    摘要翻译： 本发明包括电子存储器结构。 电子存储器结构包括基板。 基本上平面的第一导体形成为与基板相邻。 互连层与第一导体相邻地形成。 在互连层附近形成相变材料元件。 互连层包括从第一导体延伸到相变材料元件的导电互连结构。 互连结构包括物理地连接到第一导体的第一表面。 互连结构还包括附接到相变材料元件的第二表面。 第二表面的第二表面积基本上小于第一表面的第一表面积。 形成与相变材料元件相邻的基本平坦的第二导体。

    Tunnel-junction structures and methods
    2.
    发明授权
    Tunnel-junction structures and methods 失效
    隧道结结构和方法

    公开(公告)号：US06821848B2

    公开(公告)日：2004-11-23

    申请号：US10286157

    申请日：2002-10-30

    申请人： Dennis Lazaroff ,  Kenneth M. Kramer ,  James E. Ellenson ,  Neal W. Meyer ,  David Punsalan ,  Kurt Ulmer ,  Peter Fricke ,  Andrew Koll ,  Andrew L. Van Brocklin

    发明人： Dennis Lazaroff ,  Kenneth M. Kramer ,  James E. Ellenson ,  Neal W. Meyer ,  David Punsalan ,  Kurt Ulmer ,  Peter Fricke ,  Andrew Koll ,  Andrew L. Van Brocklin

    IPC分类号： H01L21336

    CPC分类号： G11C13/003 ,  G11C17/16 ,  G11C17/18 ,  G11C2213/76

    摘要： Tunnel-junction structures are fabricated by any of a set of related methods that form two or more tunnel junctions simultaneously. The fabrication methods disclosed are compatible with conventional CMOS fabrication practices, including both single damascene and dual damascene processes. The simultaneously formed tunnel junctions may have different areas. In some embodiments, tub-well structures are formed with sloped sidewalls. In some embodiments, an oxide-metal-oxide film stack on the sidewall of a tub-well is etched to form the tunnel junctions. Memory circuits, other integrated circuit structures, substrates carrying microelectronics, and other electronic devices made by the methods are disclosed.

    摘要翻译： 隧道结结构通过同时形成两个或更多个隧道结的一组相关方法中的任一种来制造。 所公开的制造方法与常规CMOS制造实践兼容，包括单镶嵌和双镶嵌工艺。 同时形成的隧道结可以具有不同的区域。 在一些实施例中，浴盆结构形成有倾斜的侧壁。 在一些实施例中，蚀刻在浴缸的侧壁上的氧化物 - 金属氧化物膜堆叠以形成隧道结。 公开了存储电路，其它集成电路结构，携带微电子的衬底以及通过该方法制造的其它电子器件。

    INKJET PRINTHEAD BRIDGE BEAM FABRICATION METHOD
    3.
    发明申请
    INKJET PRINTHEAD BRIDGE BEAM FABRICATION METHOD 有权
    INKJET PRINTHEAD BRIDGE梁制造方法

    公开(公告)号：US20110049092A1

    公开(公告)日：2011-03-03

    申请号：US12548397

    申请日：2009-08-26

    申请人： Alfred I-Tsung Pan ,  Kenneth Vandenberghe ,  Dennis Lazaroff

    发明人： Alfred I-Tsung Pan ,  Kenneth Vandenberghe ,  Dennis Lazaroff

    IPC分类号： B44C1/22

    CPC分类号： B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1642 ,  B41J2/1646

    摘要： A method of fabricating a bridge beam of an inkjet printhead employs a cavity formed under the bridge beam and an etch-stop layer that limits a back-surface recess formation. The method includes forming a cavity that connects between a bottom of a pair of trenches in and extending from a front surface of a substrate and depositing an etch-stop layer at a bottom of the cavity. The method further includes forming a recess in a back surface of the substrate, the recess exposing the etch-stop layer and the etch-stop layer limiting a depth of the formed recess. The method further includes removing the exposed etch-stop layer to connect the cavity and the recess, the bridge beam being a portion of the substrate above the formed cavity and between the trenches.

    摘要翻译： 一种制造喷墨打印头的桥梁的方法采用在桥梁下方形成的空腔和限制背面凹陷形成的蚀刻停止层。 该方法包括形成将一对沟槽的底部连接在衬底的前表面中并从衬底的前表面延伸并在该腔的底部沉积蚀刻停止层的空腔。 该方法还包括在基板的后表面中形成凹部，露出蚀刻停止层的凹部和限制形成的凹部的深度的蚀刻停止层。 该方法还包括去除暴露的蚀刻停止层以连接空腔和凹部，桥梁是在形成的空腔之上和沟槽之间的衬底的一部分。

    Anti-reflective surface
    4.
    发明申请
    Anti-reflective surface 审中-公开
    抗反射面

    公开(公告)号：US20060228892A1

    公开(公告)日：2006-10-12

    申请号：US11101323

    申请日：2005-04-06

    申请人： Dennis Lazaroff ,  Arthur Piehl ,  Bhavin Shah

    发明人： Dennis Lazaroff ,  Arthur Piehl ,  Bhavin Shah

    IPC分类号： H01L21/465 ,  H01L33/00

    CPC分类号： G02B1/118 ,  C03C17/007 ,  C03C2217/40 ,  C03C2218/328 ,  G02B1/11 ,  G02B5/045

    摘要： A discontinuous layer is formed on a transparent substrate of a semiconductor material. Portions of the transparent substrate are exposed at discontinuities in the discontinuous layer. The discontinuous layer and the exposed portions of the transparent substrate are etched at least until the discontinuous layer is completely removed, thereby forming peaks and valleys in the substrate.

    摘要翻译： 在半导体材料的透明基板上形成不连续层。 在不连续层中的不连续部分露出透明基板的一部分。 蚀刻不连续层和透明基板的露出部分至少直到不连续层被完全去除，从而在基板中形成峰和谷。

    Inkjet printhead bridge beam fabrication method
    6.
    发明授权
    Inkjet printhead bridge beam fabrication method 有权
    喷墨打印头桥梁制造方法

    公开(公告)号：US08425787B2

    公开(公告)日：2013-04-23

    申请号：US12548397

    申请日：2009-08-26

    申请人： Alfred I-Tsung Pan ,  Kenneth Vandenberghe ,  Dennis Lazaroff

    发明人： Alfred I-Tsung Pan ,  Kenneth Vandenberghe ,  Dennis Lazaroff

    IPC分类号： G01D15/00

    CPC分类号： B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1642 ,  B41J2/1646

    摘要： A method of fabricating a bridge beam of an inkjet printhead employs a cavity formed under the bridge beam and an etch-stop layer that limits a back-surface recess formation. The method includes forming a cavity that connects between a bottom of a pair of trenches in and extending from a front surface of a substrate and depositing an etch-stop layer at a bottom of the cavity. The method further includes forming a recess in a back surface of the substrate, the recess exposing the etch-stop layer and the etch-stop layer limiting a depth of the formed recess. The method further includes removing the exposed etch-stop layer to connect the cavity and the recess, the bridge beam being a portion of the substrate above the formed cavity and between the trenches.

    摘要翻译： 一种制造喷墨打印头的桥梁的方法采用在桥梁下方形成的空腔和限制背面凹陷形成的蚀刻停止层。 该方法包括形成将一对沟槽的底部连接在衬底的前表面中并从衬底的前表面延伸并在该腔的底部沉积蚀刻停止层的空腔。 该方法还包括在基板的后表面中形成凹部，露出蚀刻停止层的凹部和限制形成的凹部的深度的蚀刻停止层。 该方法还包括去除暴露的蚀刻停止层以连接空腔和凹部，桥梁是在形成的空腔之上和沟槽之间的衬底的一部分。

    MEMS device and method of forming MEMS device
    7.
    发明申请
    MEMS device and method of forming MEMS device 有权
    MEMS器件和MEMS器件的形成方法

    公开(公告)号：US20050106772A1

    公开(公告)日：2005-05-19

    申请号：US11019780

    申请日：2004-12-21

    申请人： Michael Monroe ,  Eric Nikkel ,  Dennis Lazaroff

    发明人： Michael Monroe ,  Eric Nikkel ,  Dennis Lazaroff

    IPC分类号： B81B3/00 ,  B81C1/00 ,  G02B26/08 ,  H01L21/8242

    CPC分类号： G02B26/0841 ,  B81B3/0083 ,  B81B2201/042 ,  B81B2203/0181 ,  B81B2203/058 ,  Y10S359/904

    摘要： A method of forming a MEMS device includes depositing a conductive material on a substructure, forming a first sacrificial layer over the conductive material, including forming a substantially planar surface of the first sacrificial layer, and forming a first element over the substantially planar surface of the first sacrificial layer, including communicating the first element with the conductive material through the first sacrificial layer. In addition, the method includes forming a second sacrificial layer over the first element, including forming a substantially planar surface of the second sacrificial layer, forming a support through the second sacrificial layer to the first element after forming the second sacrificial layer, including, filling the support, and forming a second element over the support and the substantially planar surface of the second sacrificial layer. As such, the method further includes substantially removing the first sacrificial layer and the second sacrificial layer, thereby supporting the second element relative to the first element with the support.

    摘要翻译： 形成MEMS器件的方法包括在基底结构上沉积导电材料，在导电材料上形成第一牺牲层，包括形成第一牺牲层的基本平坦的表面，以及在第一牺牲层的基本平坦的表面上形成第一元件 第一牺牲层，包括通过第一牺牲层将第一元件与导电材料连通。 另外，该方法包括在第一元件上形成第二牺牲层，包括形成第二牺牲层的基本平坦的表面，在形成第二牺牲层之后，通过第二牺牲层形成支撑件到第一元件，包括填充 支撑件，以及在第二牺牲层的支撑件和基本平坦的表面上形成第二元件。 这样，该方法还包括基本上去除第一牺牲层和第二牺牲层，从而相对于第一元件与支撑件支撑第二元件。

    MEMS release methods
    9.
    发明申请
    MEMS release methods 审中-公开
    MEMS释放方法

    公开(公告)号：US20060234412A1

    公开(公告)日：2006-10-19

    申请号：US11110132

    申请日：2005-04-19

    申请人： Dennis Lazaroff

    发明人： Dennis Lazaroff

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00944 ,  B81C1/0092 ,  B81C2203/0109

    摘要： A packaged MEMS device is fabricated by providing a first substrate, forming the MEMS device on the first substrate (the MEMS device including at least one element initially held immobile by a sacrificial material), optionally removing a portion of the sacrificial material without releasing the element, providing a second substrate, forming at least one release port, bonding the second substrate to the first substrate, and removing the sacrificial material through the release port to release the element.

    摘要翻译： 通过提供第一衬底来制造封装的MEMS器件，所述第一衬底在第一衬底上形成MEMS器件（所述MEMS器件包括最初由牺牲材料固定的至少一个元件），任选地去除牺牲材料的一部分而不释放元件 提供第二衬底，形成至少一个释放端口，将第二衬底接合到第一衬底，以及通过释放端口去除牺牲材料以释放元件。