STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK
    3.
    发明申请
    STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK 审中-公开
    用于排放超极本超薄膜的结构

    公开(公告)号:US20140027634A1

    公开(公告)日:2014-01-30

    申请号:US14039939

    申请日:2013-09-27

    Abstract: A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.

    Abstract translation: 提供一种用于放电极紫外线掩模(EUV掩模)的结构,用于通过电子束检查工具在检查期间对EUV掩模进行放电。 用于放电EUV掩模的结构包括至少一个接触引脚以接触EUV掩模上的导电区域,其中EUV掩模可以在侧壁或/或底部上具有另外的导电层。 通过使用电子束检查系统来增强EUV掩模的检查质量,因为EUU掩模上的累积充电是接地的。

    STRUCTURE ELECTRON BEAM INSPECTION SYSTEM FOR INSPECTING EXTREME ULTRAVIOLET MASK AND STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK
    4.
    发明申请
    STRUCTURE ELECTRON BEAM INSPECTION SYSTEM FOR INSPECTING EXTREME ULTRAVIOLET MASK AND STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK 有权
    结构电子束检测系统,用于检测极端的超紫外线掩膜和结构,用于放出极端的超紫外线掩模

    公开(公告)号:US20150305131A1

    公开(公告)日:2015-10-22

    申请号:US14755626

    申请日:2015-06-30

    Abstract: A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.

    Abstract translation: 提供一种用于放电极紫外线掩模(EUV掩模)的结构,用于通过电子束检查工具在检查期间对EUV掩模进行放电。 用于放电EUV掩模的结构包括至少一个接触引脚以接触EUV掩模上的导电区域,其中EUV掩模可以在侧壁或/或底部上具有另外的导电层。 通过使用电子束检查系统来增强EUV掩模的检查质量,因为EUU掩模上的累积充电是接地的。

Patent Agency Ranking