公开(公告)号：US20070062817A1

公开(公告)日：2007-03-22

申请号：US11266798

申请日：2005-11-04

申请人： Herve Monchoix ,  Frederic Raynal ,  Jerome Daviot ,  Jose Gonzalez

发明人： Herve Monchoix ,  Frederic Raynal ,  Jerome Daviot ,  Jose Gonzalez

IPC分类号： C25D3/38

CPC分类号： C25D5/54 ,  C25D3/38 ,  C25D5/18 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873

摘要： The object of the present invention is a method of coating a surface of a substrate with copper by electroplating. According to the invention, this method comprises: a step during which the said surface to be coated is brought into contact with an electroplating bath while the said surface is not under electrical bias; a step of forming the coating during which the said surface is biased; a step during which the said surface is separated from the electroplating bath while it is under electrical bias; the aforementioned electroplating bath comprising, in solution in a solvent: a source of copper ions, with a concentration of between 0.4 and 40 mM; and at least one copper complexing agent.

摘要翻译： 本发明的目的是通过电镀用铜涂覆基底表面的方法。 根据本发明，该方法包括：在所述表面不受电偏压的情况下使所述待涂覆的所述表面与电镀槽接触的步骤; 形成所述表面偏压的涂层的步骤; 所述表面在电气偏压下与电镀浴分离的步骤; 上述电镀浴在溶剂溶液中包含：铜离子源，浓度为0.4至40mM; 和至少一种铜络合剂。

公开(公告)号：US20070062818A1

公开(公告)日：2007-03-22

申请号：US11266799

申请日：2005-11-04

申请人： Jerome Daviot ,  Jose Gonzalez

发明人： Jerome Daviot ,  Jose Gonzalez

IPC分类号： C25D3/38

CPC分类号： C25D5/54 ,  C25D3/38 ,  C25D5/34 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76873

摘要： The object of the present invention is an electroplating composition intended in particular for coating a copper-diffusion barrier layer in the fabrication of interconnects for integrated circuits. According to the invention, this composition comprises, in solution in a solvent: a source of copper ions, in a concentration of between 0.4 and 40 mM; at least one copper complexing agent chosen from the group comprising primary aliphatic amines, secondary aliphatic amines, tertiary aliphatic amines, aromatic amines, nitrogen heterocycles and oximes; the copper/complexing agent(s) molar ratio being between 0.1 and 2.5, preferably between 0.3 and 1.3; and the pH of the said composition being less than 7, preferably between 3.5 and 6.5.

摘要翻译： 本发明的目的是一种电镀组合物，其特别用于在制造用于集成电路的互连件中涂覆铜扩散阻挡层。 根据本发明，该组合物在浓度为0.4至40mM之间的溶剂溶液中包含铜离子源; 选自伯脂族胺，仲脂族胺，叔脂族胺，芳族胺，氮杂环和肟的至少一种铜络合剂; 铜/络合剂的摩尔比在0.1和2.5之间，优选在0.3和1.3之间; 并且所述组合物的pH小于7，优选3.5至6.5。

公开(公告)号：US20050107274A1

公开(公告)日：2005-05-19

申请号：US10966655

申请日：2004-10-14

申请人： Jerome Daviot

发明人： Jerome Daviot

IPC分类号： B08B7/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  C23G1/00 ,  C11D1/00

CPC分类号： H01L21/02063 ,  B08B7/0021 ,  H01L21/02052 ,  H01L21/02068 ,  H01L21/02101 ,  H01L21/31116

摘要： The present invention provides for methods and compositions for removal of post etch residues and copper contamination from low-k dielectrics and substrates using supercritical CO2 with diketone additives. Using methods of this invention, Cu-residues formed during dielectric etch were removed with an high efficiency. Various process conditions are presented in order to exemplify the cleaning mechanisms.

摘要翻译： 本发明提供用于使用超临界CO 2与二酮添加剂从低k电介质和基底去除后蚀刻残余物和铜污染物的方法和组合物。 使用本发明的方法，在电介质蚀刻期间形成的Cu残留物以高效率被去除。 呈现各种工艺条件以便例示清洁机构。

公开(公告)号：US07235188B2

公开(公告)日：2007-06-26

申请号：US10688900

申请日：2003-10-21

申请人： Jerome Daviot ,  Christopher Reid ,  Douglas Holmes

发明人： Jerome Daviot ,  Christopher Reid ,  Douglas Holmes

IPC分类号： C09K13/00

CPC分类号： H01L21/02071 ,  C11D7/06 ,  C11D7/08 ,  C11D7/3218 ,  C11D7/3227 ,  C11D7/3281 ,  C11D11/0047

摘要： The present invention relates to dilute aqueous solutions containing phosphoric acid and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The solution according to the invention may advantageous contain an alkaline compound, one or more other acid compounds, and/or a fluoride-containing compound and may optionally contain additional components such as organic solvents, chelating agents, amines, and/or surfactants.

摘要翻译： 本发明涉及含有磷酸的稀释水溶液和用于从包括这种稀水溶液的半导体衬底清洗等离子体蚀刻残留物的方法。 根据本发明的溶液可以有利地含有碱性化合物，一种或多种其它酸化合物和/或含氟化合物，并且可以任选地含有另外的组分如有机溶剂，螯合剂，胺和/或表面活性剂。

公开(公告)号：US20070054823A1

公开(公告)日：2007-03-08

申请号：US11525807

申请日：2006-09-25

申请人： Jerome Daviot

发明人： Jerome Daviot

IPC分类号： C09D9/00

CPC分类号： H01L21/02063 ,  B08B7/0021 ,  H01L21/02052 ,  H01L21/02068 ,  H01L21/02101 ,  H01L21/31116

摘要： The present invention provides for methods and compositions for removal of post etch residues and copper contamination from low-k dielectrics and substrates using supercritical CO2 with diketone additives. Using methods of this invention, Cu-residues formed during dielectric etch were removed with an high efficiency. Various process conditions are presented in order to exemplify the cleaning mechanisms.

摘要翻译： 本发明提供用于使用超临界CO 2与二酮添加剂从低k电介质和基底去除后蚀刻残余物和铜污染物的方法和组合物。 使用本发明的方法，在电介质蚀刻期间形成的Cu残留物以高效率被去除。 呈现各种工艺条件以便例示清洁机构。

公开(公告)号：US20050202987A1

公开(公告)日：2005-09-15

申请号：US10920494

申请日：2004-08-17

申请人： Robert Small ,  Bakul Patel ,  Wai Mun Lee ,  Douglas Holmes ,  Jerome Daviot ,  Chris Reid

发明人： Robert Small ,  Bakul Patel ,  Wai Mun Lee ,  Douglas Holmes ,  Jerome Daviot ,  Chris Reid

IPC分类号： C09K13/08 ,  G03F7/42 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  C11D1/00

CPC分类号： H01L21/02071 ,  C09K13/08 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02063 ,  H01L21/31133

摘要： A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.

摘要翻译： 一种用于剥离光致抗蚀剂的组合物，以及用于清洁底物的残留物和用于氧化硅蚀刻的组合物，其包含约0.01重量％至约10重量％的一种或多种氟化物，约10重量％至约95重量％ 重量百分比的亚砜或砜溶剂，和约20％至约50％重​​量的水。 组合物可以含有腐蚀抑制剂，螯合剂，助溶剂，碱性胺化合物，表面活性剂，酸和碱。

公开(公告)号：US07456140B2

公开(公告)日：2008-11-25

申请号：US10920494

申请日：2004-08-17

申请人： Robert J. Small ,  Bakul P. Patel ,  Wai Mun Lee ,  Douglas Holmes ,  Jerome Daviot ,  Chris Reid

发明人： Robert J. Small ,  Bakul P. Patel ,  Wai Mun Lee ,  Douglas Holmes ,  Jerome Daviot ,  Chris Reid

IPC分类号： C11D7/50

CPC分类号： H01L21/02071 ,  C09K13/08 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02063 ,  H01L21/31133

摘要： A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.

摘要翻译： 一种用于剥离光致抗蚀剂的组合物，以及用于清洁底物的残留物和用于氧化硅蚀刻的组合物，其包含约0.01重量％至约10重量％的一种或多种氟化物，约10重量％至约95重量％ 重量百分比的亚砜或砜溶剂，和约20％至约50％重​​量的水。 组合物可以含有腐蚀抑制剂，螯合剂，助溶剂，碱性胺化合物，表面活性剂，酸和碱。

公开(公告)号：US07012051B2

公开(公告)日：2006-03-14

申请号：US10257469

申请日：2001-04-12

申请人： Jerome Daviot ,  Stanley Affrossman ,  Douglas Holmes

发明人： Jerome Daviot ,  Stanley Affrossman ,  Douglas Holmes

IPC分类号： C11D3/30 ,  C11D3/20

CPC分类号： H01L21/02071 ,  C09D9/00 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/31138

摘要： A composition for removing resist, polymeric material and/or etching residue from a substrate comprising titanium or an alloy thereof, the composition comprising hydroxylamine or a derivative thereof and at least one compound having the general formula (I) wherein: R1 and R3 are each independently selected from H, OH, CO2H, halogen, C1–C3 alkyl, C1–C3 alkoxy or (CH2)nOH wherein n is 1, 2 or 3; and R2 is selected from C9–C16 alkyl, or C9–C16 alkoxy

摘要翻译： 用于从包含钛或其合金的基底去除抗蚀剂，聚合物材料和/或蚀刻残留物的组合物，所述组合物包含羟胺或其衍生物和至少一种具有通式（I）的化合物，其中：R 1 R 3和R 3各自独立地选自H，OH，CO 2 H，卤素，C 1 -C 3烷基， 3个C 1 -C 3烷基，C 1 -C 3烷氧基或（CH 2 CH 2）n OH其中n 是1，2或3; 并且R 2选自C 9 -C 16烷基或C 9 -C 16烷基 烷氧基

公开(公告)号：US06777380B2

公开(公告)日：2004-08-17

申请号：US09903064

申请日：2001-07-10

申请人： Robert J. Small ,  Bakul P. Patel ,  Wai Mun Lee ,  Douglas Holmes ,  Jerome Daviot ,  Chris Reid

发明人： Robert J. Small ,  Bakul P. Patel ,  Wai Mun Lee ,  Douglas Holmes ,  Jerome Daviot ,  Chris Reid

IPC分类号： G03C500

CPC分类号： G03F7/423 ,  C09K13/08 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02052 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/31111 ,  H01L21/31133

摘要： A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.

摘要翻译： 一种用于剥离光致抗蚀剂的组合物，以及用于清洁底物的残留物和用于氧化硅蚀刻的组合物，其包含约0.01重量％至约10重量％的一种或多种氟化物，约10重量％至约95重量％ 重量百分比的亚砜或砜溶剂，和约20％至约50％重​​量的水。 组合物可以含有腐蚀抑制剂，螯合剂，助溶剂，碱性胺化合物，表面活性剂，酸和碱。