公开(公告)号：US20050202987A1

公开(公告)日：2005-09-15

申请号：US10920494

申请日：2004-08-17

申请人： Robert Small ,  Bakul Patel ,  Wai Mun Lee ,  Douglas Holmes ,  Jerome Daviot ,  Chris Reid

发明人： Robert Small ,  Bakul Patel ,  Wai Mun Lee ,  Douglas Holmes ,  Jerome Daviot ,  Chris Reid

IPC分类号： C09K13/08 ,  G03F7/42 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  C11D1/00

CPC分类号： H01L21/02071 ,  C09K13/08 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02063 ,  H01L21/31133

摘要： A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.

摘要翻译： 一种用于剥离光致抗蚀剂的组合物，以及用于清洁底物的残留物和用于氧化硅蚀刻的组合物，其包含约0.01重量％至约10重量％的一种或多种氟化物，约10重量％至约95重量％ 重量百分比的亚砜或砜溶剂，和约20％至约50％重​​量的水。 组合物可以含有腐蚀抑制剂，螯合剂，助溶剂，碱性胺化合物，表面活性剂，酸和碱。

公开(公告)号：US07456140B2

公开(公告)日：2008-11-25

申请号：US10920494

申请日：2004-08-17

申请人： Robert J. Small ,  Bakul P. Patel ,  Wai Mun Lee ,  Douglas Holmes ,  Jerome Daviot ,  Chris Reid

发明人： Robert J. Small ,  Bakul P. Patel ,  Wai Mun Lee ,  Douglas Holmes ,  Jerome Daviot ,  Chris Reid

IPC分类号： C11D7/50

CPC分类号： H01L21/02071 ,  C09K13/08 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02063 ,  H01L21/31133

摘要： A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.

摘要翻译： 一种用于剥离光致抗蚀剂的组合物，以及用于清洁底物的残留物和用于氧化硅蚀刻的组合物，其包含约0.01重量％至约10重量％的一种或多种氟化物，约10重量％至约95重量％ 重量百分比的亚砜或砜溶剂，和约20％至约50％重​​量的水。 组合物可以含有腐蚀抑制剂，螯合剂，助溶剂，碱性胺化合物，表面活性剂，酸和碱。

公开(公告)号：US06777380B2

公开(公告)日：2004-08-17

申请号：US09903064

申请日：2001-07-10

申请人： Robert J. Small ,  Bakul P. Patel ,  Wai Mun Lee ,  Douglas Holmes ,  Jerome Daviot ,  Chris Reid

发明人： Robert J. Small ,  Bakul P. Patel ,  Wai Mun Lee ,  Douglas Holmes ,  Jerome Daviot ,  Chris Reid

IPC分类号： G03C500

CPC分类号： G03F7/423 ,  C09K13/08 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02052 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/31111 ,  H01L21/31133

摘要： A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.

摘要翻译： 一种用于剥离光致抗蚀剂的组合物，以及用于清洁底物的残留物和用于氧化硅蚀刻的组合物，其包含约0.01重量％至约10重量％的一种或多种氟化物，约10重量％至约95重量％ 重量百分比的亚砜或砜溶剂，和约20％至约50％重​​量的水。 组合物可以含有腐蚀抑制剂，螯合剂，助溶剂，碱性胺化合物，表面活性剂，酸和碱。

公开(公告)号：US08802609B2

公开(公告)日：2014-08-12

申请号：US13354145

申请日：2012-01-19

申请人： Wai Mun Lee ,  Hua Cui ,  Mark A. Scialdone ,  Albert G. Anderson

发明人： Wai Mun Lee ,  Hua Cui ,  Mark A. Scialdone ,  Albert G. Anderson

IPC分类号： C11D3/60 ,  C11D11/00 ,  C11D7/32 ,  C11D3/43 ,  H01L21/02

CPC分类号： C11D11/0047 ,  C11D3/43 ,  C11D7/3209 ,  G03F7/422 ,  G03F7/425 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/02074

摘要： Semiconductor processing compositions comprising amidoxime compounds having two or more amidoxime functional groups and their use in semiconductor processing to remove photoresist, polymeric materials, etching residues and copper oxides from semiconductor substrates, particularly substrates comprising copper, low-k dielectric material, titanium nitride, and/or titanium oxynitride.

摘要翻译： 包含具有两个或更多个偕胺肟官能团的偕胺肟化合物的半导体处理组合物及其在半导体处理中用于从半导体衬底，特别是包含铜，低k电介质材料，氮化钛和/或氧化物的衬底去除光致抗蚀剂，聚合物材料，蚀刻残余物和铜氧化物的用途 /或氮氧化钛。

公开(公告)号：US08658583B2

公开(公告)日：2014-02-25

申请号：US12564584

申请日：2009-09-22

申请人： Wai Mun Lee

发明人： Wai Mun Lee

IPC分类号： C11D1/14

CPC分类号： C11D11/0047 ,  C11D1/22 ,  C11D3/3409 ,  C11D3/3418 ,  C11D7/34 ,  G03F7/426

摘要： An improved method for making a photoresist stripping solution for a metal-containing semi-conductor substrate where the stripping solution comprises a blend of at least one organic sulfonic acid with a halogen-free hydrocarbon solvent wherein concentrations of trace amounts of residual sulfuric acid and sulfur trioxide in the blend are reduced to very low levels.

摘要翻译： 一种用于制备用于含金属的半导体衬底的光致抗蚀剂剥离溶液的改进方法，其中剥离溶液包含至少一种有机磺酸与无卤素烃溶剂的共混物，其中痕量的残余硫酸和硫的浓度 共混物中的三氧化硫减少到非常低的水平。

公开(公告)号：US20100279910A1

公开(公告)日：2010-11-04

申请号：US12564584

申请日：2009-09-22

申请人： Wai Mun Lee

发明人： Wai Mun Lee

IPC分类号： G03F7/42 ,  C11D3/34

CPC分类号： C11D11/0047 ,  C11D1/22 ,  C11D3/3409 ,  C11D3/3418 ,  C11D7/34 ,  G03F7/426

摘要： An improved method for making a photoresist stripping solution for a metal-containing semi-conductor substrate where the stripping solution comprises a blend of at least one organic sulfonic acid with a halogen-free hydrocarbon solvent wherein concentrations of trace amounts of residual sulfuric acid and sulfur trioxide in the blend are reduced to very low levels.

摘要翻译： 一种用于制备用于含金属的半导体衬底的光致抗蚀剂剥离溶液的改进方法，其中剥离溶液包含至少一种有机磺酸与无卤素烃溶剂的共混物，其中痕量的残余硫酸和硫的浓度 共混物中的三氧化硫减少到非常低的水平。

公开(公告)号：US07579308B2

公开(公告)日：2009-08-25

申请号：US11120054

申请日：2005-05-02

申请人： Wai Mun Lee

发明人： Wai Mun Lee

IPC分类号： C11D7/50

CPC分类号： C23F1/34 ,  C11D7/3218 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426 ,  H01L21/31133 ,  H05K3/26

摘要： Improved compositions and processes for removing photoresists, polymers, post etch residues, and post oxygen ashing residues from interconnect, wafer level packaging, and printed circuit board substrates are disclosed. One process comprises contacting such substrates with mixtures containing an effective amount of organic ammonium compound(s); from about 2 to about 20 weight percent of oxammonium compound(s); optionally organic solvent(s); and water.

公开(公告)号：US20090130849A1

公开(公告)日：2009-05-21

申请号：US12260575

申请日：2008-10-29

申请人： Wai Mun Lee

发明人： Wai Mun Lee

IPC分类号： H01L21/304 ,  C09G1/02

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/31111

摘要： A composition and associated method for chemical mechanical planarization (or other polishing) is described. The composition contains an amidoxime compound and water. The composition may also contain an abrasive and a compound with oxidation and reduction potential. The composition is useful for attaining improved removal rates for metal, including copper, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications.

摘要翻译： 描述了用于化学机械平面化（或其它抛光）的组合物和相关方法。 该组合物含有偕胺肟化合物和水。 组合物还可以含有具有氧化和还原电位的研磨剂和化合物。 该组合物可用于在金属CMP中获得金属，包括铜，阻挡材料和电介质层材料的改进的去除速率。 该组合物特别适用于金属CMP应用的相关方法。

公开(公告)号：US07144849B2

公开(公告)日：2006-12-05

申请号：US11181747

申请日：2005-07-15

申请人： Wai Mun Lee ,  Charles U. Pittman, Jr. ,  Robert J. Small

发明人： Wai Mun Lee ,  Charles U. Pittman, Jr. ,  Robert J. Small

IPC分类号： C11D7/26 ,  C11D7/32 ,  C11D7/50

CPC分类号： G03F7/425 ,  C11D7/261 ,  C11D7/3218 ,  C11D7/3227 ,  C11D7/3245 ,  C11D7/3263 ,  C11D7/34 ,  C11D7/5009 ,  C11D7/5013 ,  C11D7/5022 ,  C11D11/0047 ,  C23G1/18

摘要： A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.

公开(公告)号：US06399551B1

公开(公告)日：2002-06-04

申请号：US09444548

申请日：1999-11-22

申请人： Wai Mun Lee

发明人： Wai Mun Lee

IPC分类号： C11D732

CPC分类号： H01L21/02071 ,  B24B37/042 ,  C09D9/00 ,  C11D3/2058 ,  C11D3/2065 ,  C11D3/2086 ,  C11D3/30 ,  C11D3/3427 ,  C11D3/3472 ,  C11D3/43 ,  C11D7/261 ,  C11D7/263 ,  C11D7/265 ,  C11D7/267 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3227 ,  C11D7/3245 ,  C11D7/3254 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/5004 ,  C11D7/5013 ,  C11D11/0047 ,  C11D11/0052 ,  C23G1/103 ,  C23G1/205 ,  G03F7/42 ,  G03F7/425 ,  H01L21/02052 ,  H01L21/02063 ,  H01L21/31133

摘要： A two carbon atom linkage alkanolamine compound composition comprises the two carbon atom linkage alkanolamine compound, gallic acid or catechol, and optionally, an aqueous hydroxylamine solution. The balance of the composition is made up of water, preferably high purity deionized water, or another suitable polar solvent. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, comprises contacting the substrate with the composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of the two carbon atom linkage alkanolamine compound in the composition and process provides superior residue removal without attacking titanium or other metallurgy, oxide or nitride layers on the substrate.

摘要翻译： 两个碳原子键链烷醇胺化合物组合物包含两个碳原子键链烷醇胺化合物，没食子酸或儿茶酚，以及任选的羟胺水溶液。 组合物的余量由水，优选高纯度去离子水或另一种合适的极性溶剂组成。 用于从衬底（例如包括钛冶金的集成电路半导体晶片）去除光致抗蚀剂或其它残留物的方法包括使衬底与组合物接触足以从衬底去除光致抗蚀剂或其它残余物的时间和温度。 在组合物和方法中使用两个碳原子键链烷醇胺化合物提供优异的残余物去除而不侵蚀基底上的钛或其它冶金，氧化物或氮化物层。