公开(公告)号：US20090065777A1

公开(公告)日：2009-03-12

申请号：US12208371

申请日：2008-09-11

申请人： Eiji Oue ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Toshio Miyazawa ,  Yuichiro Takashina

发明人： Eiji Oue ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Toshio Miyazawa ,  Yuichiro Takashina

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L27/1229 ,  H01L27/1214 ,  H01L27/1274 ,  H01L29/66765 ,  H01L29/78678

摘要： In a display device of the present invention which forms thin film transistors on a substrate, the thin film transistor comprises: a silicon nitride film which is formed on the substrate in a state that the silicon nitride film covers a gate electrode; a silicon oxide film which is selectively formed on the silicon nitride film; a semiconductor layer which is formed at least on an upper surface of the silicon oxide film and includes a pseudo single crystal layer or a polycrystalline layer; and a drain electrode and a source electrode which are formed on an upper surface of the semiconductor layer by way of a contact layer, wherein either one of the pseudo single crystal layer and the poly-crystalline layer is formed by crystallizing the amorphous silicon layer, and a peripheral-side wall surface of the pseudo single crystal layer or the polycrystalline layer is contiguously constituted with a peripheral-side wall surface of the silicon oxide film below the pseudo single crystal layer or the polycrystalline layer without a stepped portion.

摘要翻译： 在本发明的在基板上形成薄膜晶体管的显示装置中，薄膜晶体管包括：在氮化硅膜覆盖栅电极的状态下在基板上形成的氮化硅膜; 选择性地形成在氮化硅膜上的氧化硅膜; 形成在所述氧化硅膜的上表面上的半导体层，其包含伪单晶层或多晶层; 以及通过接触层形成在半导体层的上表面上的漏电极和源电极，其中通过使非晶硅层结晶来形成伪单晶层和多晶层中的任一个， 并且伪单晶层或多晶层的外围侧壁表面在不具有台阶部分的伪单晶层或多晶层下方的氧化硅膜的周向侧壁表面附近构成。

公开(公告)号：US20090218575A1

公开(公告)日：2009-09-03

申请号：US12379662

申请日：2009-02-26

申请人： Hidekazu Miyake ,  Eiji Oue ,  Takuo Kaitoh ,  Toshio Miyazawa

发明人： Hidekazu Miyake ,  Eiji Oue ,  Takuo Kaitoh ,  Toshio Miyazawa

IPC分类号： H01L33/00 ,  H01L21/336

CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/66765

摘要： Provided is a display device including a p-type thin film transistor formed on a substrate, in which the p-type thin film transistor includes: a gate electrode; a drain electrode; a source electrode; an insulating film; a semiconductor layer formed on a top surface of the gate electrode through the insulating film; and diffusion layers of p-type impurities formed at each of an interface between the drain electrode and the semiconductor layer and an interface between the source electrode and the semiconductor layer, the drain electrode and the source electrode being formed so as to be opposed to each other with a clearance formed therebetween on a top surface of the semiconductor layer.

摘要翻译： 提供了一种显示装置，其包括形成在基板上的p型薄膜晶体管，其中p型薄膜晶体管包括：栅电极; 漏电极; 源电极; 绝缘膜; 通过绝缘膜形成在栅电极的顶表面上的半导体层; 以及在漏电极和半导体层之间的界面处形成的p型杂质的扩散层以及源电极和半导体层之间的界面，漏电极和源电极形成为与每个 另一个在半导体层的顶表面之间形成有间隙。

公开(公告)号：US08058654B2

公开(公告)日：2011-11-15

申请号：US12379662

申请日：2009-02-26

申请人： Hidekazu Miyake ,  Eiji Oue ,  Takuo Kaitoh ,  Toshio Miyazawa

发明人： Hidekazu Miyake ,  Eiji Oue ,  Takuo Kaitoh ,  Toshio Miyazawa

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/66765

摘要： Provided is a display device including a p-type thin film transistor formed on a substrate, in which the p-type thin film transistor includes: a gate electrode; a drain electrode; a source electrode; an insulating film; a semiconductor layer formed on a top surface of the gate electrode through the insulating film; and diffusion layers of p-type impurities formed at each of an interface between the drain electrode and the semiconductor layer and an interface between the source electrode and the semiconductor layer, the drain electrode and the source electrode being formed so as to be opposed to each other with a clearance formed therebetween on a top surface of the semiconductor layer.

摘要翻译： 提供了一种显示装置，其包括形成在基板上的p型薄膜晶体管，其中p型薄膜晶体管包括：栅电极; 漏电极; 源电极; 绝缘膜; 通过绝缘膜形成在栅电极的顶表面上的半导体层; 以及在漏电极和半导体层之间的界面处形成的p型杂质的扩散层以及源极和半导体层之间的界面，漏电极和源电极被形成为与每个 另一个在半导体层的顶表面之间形成有间隙。

公开(公告)号：US07952095B2

公开(公告)日：2011-05-31

申请号：US12208371

申请日：2008-09-11

申请人： Eiji Oue ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Toshio Miyazawa ,  Yuichiro Takashina

发明人： Eiji Oue ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Toshio Miyazawa ,  Yuichiro Takashina

IPC分类号： H01L29/04 ,  H01L21/00

CPC分类号： H01L27/1229 ,  H01L27/1214 ,  H01L27/1274 ,  H01L29/66765 ,  H01L29/78678

摘要： In a display device of the present invention which forms thin film transistors on a substrate, the thin film transistor comprises: a silicon nitride film which is formed on the substrate in a state that the silicon nitride film covers a gate electrode; a silicon oxide film which is selectively formed on the silicon nitride film; a semiconductor layer which is formed at least on an upper surface of the silicon oxide film and includes a pseudo single crystal layer or a polycrystalline layer; and a drain electrode and a source electrode which are formed on an upper surface of the semiconductor layer by way of a contact layer, wherein either one of the pseudo single crystal layer and the poly-crystalline layer is formed by crystallizing the amorphous silicon layer, and a peripheral-side wall surface of the pseudo single crystal layer or the polycrystalline layer is contiguously constituted with a peripheral-side wall surface of the silicon oxide film below the pseudo single crystal layer or the polycrystalline layer without a stepped portion.

摘要翻译： 在本发明的在基板上形成薄膜晶体管的显示装置中，薄膜晶体管包括：在氮化硅膜覆盖栅电极的状态下在基板上形成的氮化硅膜; 选择性地形成在氮化硅膜上的氧化硅膜; 形成在所述氧化硅膜的上表面上的半导体层，其包含伪单晶层或多晶层; 以及通过接触层形成在半导体层的上表面上的漏电极和源电极，其中通过使非晶硅层结晶来形成伪单晶层和多晶层中的任一个， 并且伪单晶层或多晶层的外围侧壁表面在不具有台阶部分的伪单晶层或多晶层下方的氧化硅膜的周向侧壁表面附近构成。

公开(公告)号：US08049255B2

公开(公告)日：2011-11-01

申请号：US12155504

申请日：2008-06-05

申请人： Takeshi Sakai ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hidekazu Miyake

发明人： Takeshi Sakai ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hidekazu Miyake

IPC分类号： H01L31/062

CPC分类号： H01L27/1214 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

摘要： A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate insulating film, a semiconductor layer, and a source electrode and a drain electrode arranged in that order on the insulating substrate. The semiconductor layer includes an active layer composed of polycrystalline semiconductor and a contact layer segment interposed between the active layer and the source electrode and another contact layer segment interposed between the active layer and the drain electrode. The source and drain electrodes each have a first face facing the opposite face of the active layer from the interface with the gate insulating layer and a second face facing an etched side face of the active layer. Each contact layer segment is disposed between the active layer and each of the first and second faces of the source or drain electrode.

摘要翻译： 半导体器件包括绝缘基板和设置在基板上的TFT元件。 TFT元件包括在绝缘基板上依次排列的栅电极，栅极绝缘膜，半导体层以及源电极和漏电极。 半导体层包括由多晶半导体构成的有源层和介于有源层与源电极之间的接触层段，以及介于有源层和漏电极之间的另一接触层段。 源极和漏极各自具有面对与有源层的界面相对的有源层的相对面的第一面和与有源层的蚀刻侧面对置的第二面。 每个接触层段设置在源极或漏极之间的有源层和第一和第二表面中的每一个之间。

公开(公告)号：US20080308811A1

公开(公告)日：2008-12-18

申请号：US12155788

申请日：2008-06-10

申请人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Noda ,  Toshio Miyazawa

发明人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Noda ,  Toshio Miyazawa

IPC分类号： H01L33/00

CPC分类号： H01L27/124 ,  G02F1/1368

摘要： The present invention provides a display device having thin film transistors which can reduce an OFF current in spite of the extremely simple constitution. In the display device having thin film transistors on a substrate, each thin film transistor includes a gate electrode which is connected with a gate signal line, a semiconductor layer which is formed astride the gate electrode by way of an insulation film, a drain electrode which is connected with a drain signal line and is formed on the semiconductor layer, and a source electrode which is formed on the semiconductor layer in a state that the source electrode faces the drain electrode in an opposed manner, and a side of the drain electrode which faces the source electrode does not overlap the gate electrode as viewed in a plan view, and a side of the source electrode which faces the drain electrode does not overlap the gate electrode as viewed in a plan view.

摘要翻译： 本发明提供了一种具有薄膜晶体管的显示装置，尽管结构非常简单，但可以减小关断电流。 在基板上具有薄膜晶体管的显示装置中，每个薄膜晶体管包括与栅极信号线连接的栅电极，通过绝缘膜跨越栅电极的半导体层，漏电极 与漏极信号线连接并形成在半导体层上，并且以与源电极相对的方式形成在漏电极的状态的半导体层上形成的源电极和漏电极的一侧 如平面图所示，面源极电极不与栅电极重叠，源极电极的面对漏电极的一侧与平面图中的栅电极不重叠。

公开(公告)号：US07777230B2

公开(公告)日：2010-08-17

申请号：US12155788

申请日：2008-06-10

申请人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Noda ,  Toshio Miyazawa

发明人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Noda ,  Toshio Miyazawa

IPC分类号： H01L27/14

CPC分类号： H01L27/124 ,  G02F1/1368

摘要： The present invention provides a display device having thin film transistors which can reduce an OFF current in spite of the extremely simple constitution. In the display device having thin film transistors on a substrate, each thin film transistor includes a gate electrode which is connected with a gate signal line, a semiconductor layer which is formed astride the gate electrode by way of an insulation film, a drain electrode which is connected with a drain signal line and is formed on the semiconductor layer, and a source electrode which is formed on the semiconductor layer in a state that the source electrode faces the drain electrode in an opposed manner, and a side of the drain electrode which faces the source electrode does not overlap the gate electrode as viewed in a plan view, and a side of the source electrode which faces the drain electrode does not overlap the gate electrode as viewed in a plan view.

摘要翻译： 本发明提供了一种具有薄膜晶体管的显示装置，尽管结构非常简单，但可以减小关断电流。 在基板上具有薄膜晶体管的显示装置中，每个薄膜晶体管包括与栅极信号线连接的栅电极，通过绝缘膜跨越栅电极的半导体层，漏电极 与漏极信号线连接并形成在半导体层上，并且以与源电极相对的方式形成在漏电极的状态的半导体层上形成的源电极和漏电极的一侧 如平面图所示，面源极电极不与栅电极重叠，源极电极的面对漏电极的一侧与平面图中的栅电极不重叠。

公开(公告)号：US20090095957A1

公开(公告)日：2009-04-16

申请号：US12285820

申请日：2008-10-15

申请人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Kuriyagawa ,  Toshio Miyazawa

发明人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Kuriyagawa ,  Toshio Miyazawa

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L29/78696 ,  H01L27/1229 ,  H01L27/1251 ,  H01L29/66765

摘要： To provide a display device, including a polysilicon thin film transistor, which achieves a reduction of an off current with a simple configuration and with only a slight increase in a number of processes. A display device includes: an insulating substrate, and a thin film transistor formed on the insulating substrate, wherein a semiconductor layer of the thin film transistor has a polysilicon layer, a first amorphous silicon layer formed above the polysilicon layer, and a second amorphous silicon layer formed above the first amorphous silicon layer.

摘要翻译： 提供一种包括多晶硅薄膜晶体管的显示装置，其以简单的配置实现了关断电流的降低，并且仅有少量的处理量增加。 一种显示装置，包括：绝缘基板和形成在所述绝缘基板上的薄膜晶体管，其中，所述薄膜晶体管的半导体层具有多晶硅层，形成在所述多晶硅层上方的第一非晶硅层，以及第二非晶硅 层形成在第一非晶硅层之上。

公开(公告)号：US20080303030A1

公开(公告)日：2008-12-11

申请号：US12155504

申请日：2008-06-05

申请人： Takeshi Sakai ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hidekazu Miyake

发明人： Takeshi Sakai ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hidekazu Miyake

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L27/1214 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

摘要： A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate insulating film, a semiconductor layer, and a source electrode and a drain electrode arranged in that order on the insulating substrate. The semiconductor layer includes an active layer composed of polycrystalline semiconductor and a contact layer segment interposed between the active layer and the source electrode and another contact layer segment interposed between the active layer and the drain electrode. The source and drain electrodes each have a first face facing the opposite face of the active layer from the interface with the gate insulating layer and a second face facing an etched side face of the active layer. Each contact layer segment is disposed between the active layer and each of the first and second faces of the source or drain electrode.

摘要翻译： 半导体器件包括绝缘基板和设置在基板上的TFT元件。 TFT元件包括在绝缘基板上依次排列的栅电极，栅极绝缘膜，半导体层以及源电极和漏电极。 半导体层包括由多晶半导体构成的有源层和介于有源层与源电极之间的接触层段，以及介于有源层和漏电极之间的另一接触层段。 源极和漏极各自具有面对与有源层的界面相对的有源层的相对面的第一面和与有源层的蚀刻侧面对置的第二面。 每个接触层段设置在源极或漏极之间的有源层和第一和第二表面中的每一个之间。

公开(公告)号：US07524685B2

公开(公告)日：2009-04-28

申请号：US11509739

申请日：2006-08-25

申请人： Takuo Kaitoh ,  Eiji Oue ,  Toshihiko Itoga

发明人： Takuo Kaitoh ,  Eiji Oue ,  Toshihiko Itoga

IPC分类号： H01L21/66

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： The present invention provides a manufacturing method of a display device which can decrease the lowering of a yield rate of the display device attributed to the aggregations generated by pseudo single crystallization of a silicon film. A manufacturing method of a display device includes a semiconductor film reforming step which reforms a semiconductor film into a second state in which the semiconductor film possesses elongated crystalline particles by radiating a laser beam to the semiconductor film in a first state, an aggregation detecting step which detects the aggregation of the semiconductor film which is generated in the semiconductor film reforming step, and a defect determination step which determines a product as a defective product when a position of the aggregation is present in the inside of the predetermined region and determines the product as a good product when the position of the aggregation is present outside the predetermined region.

摘要翻译： 本发明提供一种显示装置的制造方法，其能够降低归因于硅膜的伪单晶化产生的聚集的显示装置的成品率的降低。 显示装置的制造方法包括：半导体膜重整工序，其将第一状态下的半导体膜照射激光，将半导体膜改性为半导体膜具有细长结晶粒子的第二状态，聚集检测步骤， 检测在半导体膜重整步骤中产生的半导体膜的聚集，以及缺陷确定步骤，当聚集的位置存在于预定区域的内部时，将产品确定为不合格品，并将产品确定为 当聚集的位置存在于预定区域之外时，产品是良好的。