公开(公告)号：US06461428B2

公开(公告)日：2002-10-08

申请号：US09729669

申请日：2000-12-05

申请人： Shyuji Tobashi ,  Tadashi Ohashi ,  Katsuyuki Iwata ,  Hiroyuki Saito ,  Shinichi Mitani ,  Takaaki Honda ,  Hideki Arai ,  Yoshitaka Murofushi ,  Kunihiko Suzuki ,  Hidenori Takahashi ,  Hideki Ito ,  Hirofumi Katsumata

发明人： Shyuji Tobashi ,  Tadashi Ohashi ,  Katsuyuki Iwata ,  Hiroyuki Saito ,  Shinichi Mitani ,  Takaaki Honda ,  Hideki Arai ,  Yoshitaka Murofushi ,  Kunihiko Suzuki ,  Hidenori Takahashi ,  Hideki Ito ,  Hirofumi Katsumata

IPC分类号： C30B2514

CPC分类号： C23C16/45587 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  C30B25/12 ,  C30B25/16 ,  C30B31/14 ,  C30B31/18

摘要： A method of controlling the temperature of a semiconductor substrate for prevention of any cracks from being formed in the semiconductor substrate event though semiconductors having different temperature rise/fall characteristics are fed into a reactor in which each semiconductor substrates is subjected to an oxidation, diffusion, or a chemical vapor deposition process. The temperatures are measured at various points in the semiconductor substrates in the heated reactor; the temperature rise/fall characteristic thereof is determined by computing the rate of temperature rise and the in-plane temperature distribution out of the measured values; a temperature control program adaptable for said temperature rise/fall characteristic is automatically selected out of a plurality of temperature control programs written in advance; the semiconductor substrate is controlled on the basis of the selected temperature control program. Also is provided a susceptor to reduce contamination of the semiconductor substrate with the metal impurities containing gas flow at the time of forming a thin film on the semiconductor substrate, and a gas phase thin film growth apparatus using such susceptor. The susceptor is formed with a gas flow deflector jutting downwardly from the peripheral portion of the reverse side of the susceptor to deflect the gas flow moving upon rotation along the reverse side of the susceptor from the center thereof to the peripheral portion thereof.

摘要翻译： 控制半导体基板的温度的方法，即使在具有不同温度上升/下降特性的半导体的半导体衬底的事件中，也可以将半导体衬底的各个半导体衬底进行氧化，扩散， 或化学气相沉积工艺。 在加热的反应器中的半导体衬底中的各个点测量温度; 其温度上升/下降特性通过计算测量值中的温度升高速率和面内温度分布来确定; 可以从预先书写的多个温度控制程序中自动选择适合于所述温度上升/下降特性的温度控制程序; 基于所选择的温度控制程序来控制半导体衬底。 还提供了一种感受器，用于在半导体衬底上形成薄膜时减少含有气体流的金属杂质的半导体衬底的污染，以及使用这种感受体的气相薄膜生长装置。 基座形成有从基座的相反侧的周边部分向下突出的气流导流器，以使沿基座的相反侧旋转的气流从其中心偏转到其周边部分。

公开(公告)号：US06250914B1

公开(公告)日：2001-06-26

申请号：US09556943

申请日：2000-04-21

申请人： Hirofumi Katsumata ,  Hideki Ito ,  Hidenori Takahashi ,  Tadashi Ohashi ,  Shuji Tobashi ,  Katsuyuki Iwata

发明人： Hirofumi Katsumata ,  Hideki Ito ,  Hidenori Takahashi ,  Tadashi Ohashi ,  Shuji Tobashi ,  Katsuyuki Iwata

IPC分类号： F27D706

CPC分类号： H01L21/67248 ,  C23C16/46 ,  C23C16/52 ,  C30B25/10 ,  C30B25/16 ,  H01L21/67109

摘要： The present invention provides a wafer heating device which can improve uniformity of a temperature distribution within a surface area of a wafer, with a relatively simple structure. A wafer is supported on a susceptor of annular shape. A first heater of disc shape is disposed below the wafer, and a second heater of annular shape is disposed to surround the first heater. Radiation thermometers are arranged at a ceiling portion of a reaction chamber. The first radiation thermometer measures a temperature of a central area of the wafer, the second radiation thermometer measures a temperature of a peripheral area of the wafer, and the third radiation thermometer measures a temperature of the susceptor. The first heater and the second heater are controlled by independent closed loops. When a wafer is set on the susceptor, a power of the second heater is controlled by using a value measured by the second radiation thermometer as a feedback signal. When no wafer is set on the susceptor, the power of the second heater is controlled by using a value measured by the third radiation thermometer as a feedback signal.

摘要翻译： 本发明提供了一种晶片加热装置，其可以以相对简单的结构提高晶片表面积内的温度分布的均匀性。 晶片支撑在环形基座上。 圆盘形状的第一加热器设置在晶片的下方，并且围绕第一加热器设置环形的第二加热器。 辐射温度计布置在反应室的顶部。 第一辐射温度计测量晶片的中心区域的温度，第二辐射温度计测量晶片的周边区域的温度，并且第三辐射温度计测量基座的温度。 第一个加热器和第二个加热器由独立的闭环控制。 当晶片设置在基座上时，通过使用由第二辐射温度计测量的值作为反馈信号来控制第二加热器的功率。 当基座上没有设置晶片时，通过使用由第三辐射温度计测量的值作为反馈信号来控制第二加热器的功率。

公开(公告)号：US06537924B2

公开(公告)日：2003-03-25

申请号：US09921893

申请日：2001-08-06

申请人： Shuji Tobashi ,  Tadashi Ohashi ,  Shinichi Mitani ,  Hideki Arai ,  Hidenori Takahashi

发明人： Shuji Tobashi ,  Tadashi Ohashi ,  Shinichi Mitani ,  Hideki Arai ,  Hidenori Takahashi

IPC分类号： H01L2131

CPC分类号： C30B29/06 ,  C23C16/24 ,  C23C16/4584 ,  C30B25/14 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of chemically growing a thin film in a gas phase using a rotary gaseous phase thin film growth apparatus which feeds a material gas by flowing down the gas from above to a surface of a rotating silicon semiconductor substrate to grow a thin film on a surface of said silicon semiconductor substrate in a method of chemically growing a thin film that a thin film-growing reaction is done wherein: monosilane gas is used as an effective component of the material gas to grow the thin film under a reduced pressure of from 2.7×102 to 6.7×103 Pa with the number of rotations of said silicon semiconductor substrate being from 500 to 2000 min−1 and at a reaction temperature of from 600° C. to 800° C.

公开(公告)号：US09760003B2

公开(公告)日：2017-09-12

申请号：US13642751

申请日：2011-05-20

申请人： Kaoru Iwato ,  Hidenori Takahashi ,  Shuji Hirano ,  Sou Kamimura ,  Keita Kato

发明人： Kaoru Iwato ,  Hidenori Takahashi ,  Shuji Hirano ,  Sou Kamimura ,  Keita Kato

IPC分类号： G03F7/039 ,  G03F7/004 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  G03F7/075

CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/40 ,  Y10T428/24

摘要： Provided is a method of forming a pattern and an actinic-ray- or radiation-sensitive resin composition that excels in the limiting resolving power, roughness characteristics, exposure latitude (EL) and bridge defect performance. The method of forming a pattern includes (1) forming an actinic-ray- or radiation-sensitive resin composition into a film, (2) exposing the film to light, and (3) developing the exposed film with a developer containing an organic solvent. The actinic-ray- or radiation-sensitive resin composition contains (A) a resin containing a repeating unit with a structural moiety that is configured to decompose when exposed to actinic rays or radiation to thereby generate an acid, and (B) a solvent.

公开(公告)号：US09327611B2

公开(公告)日：2016-05-03

申请号：US13260077

申请日：2009-07-08

申请人： Yuji Nishi ,  Hidenori Takahashi ,  Masatoshi Tazawa ,  Masanobu Matsusaka ,  Makoto Ishikura

发明人： Yuji Nishi ,  Hidenori Takahashi ,  Masatoshi Tazawa ,  Masanobu Matsusaka ,  Makoto Ishikura

IPC分类号： B60L11/18 ,  H01M10/625 ,  H01M10/637 ,  H01M10/657 ,  H01M2/34 ,  H01M10/615 ,  H01M10/613 ,  H01M10/42

CPC分类号： B60L11/1875 ,  B60L11/1851 ,  H01M2/345 ,  H01M2/348 ,  H01M10/425 ,  H01M10/613 ,  H01M10/615 ,  H01M10/625 ,  H01M10/637 ,  H01M10/657 ,  H01M2200/10 ,  Y02T10/7005 ,  Y02T10/7011 ,  Y02T10/705

摘要： A temperature elevating apparatus of a secondary battery includes a ripple generator and a controller. Ripple generator is connected to secondary battery, and is configured to actively generate ripple current of a predetermined frequency in secondary battery. Controller controls ripple generator to elevate a temperature of the secondary battery by generating ripple current in secondary battery. Here, the predetermined frequency is set to be a frequency in a frequency region where an absolute value of an impedance of secondary battery relatively decreases based on frequency characteristics of the impedance of secondary battery.

摘要翻译： 二次电池的升温装置包括纹波发生器和控制器。 波纹发生器连接到二次电池，并且被配置为主动地产生二次电池中预定频率的纹波电流。 控制器控制纹波发生器，通过在二次电池中产生纹波电流来提高二次电池的温度。 这里，根据二次电池的阻抗的频率特性，将预定频率设定为二次电池的阻抗的绝对值相对减少的频率区域的频率。

公开(公告)号：US09244344B2

公开(公告)日：2016-01-26

申请号：US13614872

申请日：2012-09-13

申请人： Kosuke Koshijima ,  Hidenori Takahashi ,  Shuhei Yamaguchi ,  Kei Yamamoto

发明人： Kosuke Koshijima ,  Hidenori Takahashi ,  Shuhei Yamaguchi ,  Kei Yamamoto

IPC分类号： G03F7/038 ,  G03F7/004 ,  G03F7/039 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32

CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  Y10T428/24802

摘要： An actinic ray-sensitive or radiation-sensitive resin composition of the present invention includes a resin (P) having a repeating unit (a) represented by following General Formula (I), a compound (B) generating organic acid by irradiation of actinic ray or radiation, and 1% by mass or more of a resin (C) which has at least one of a fluorine atom and a silicon atom and is different from the resin (P) with regard to total solids of the actinic ray-sensitive or radiation-sensitive resin composition, wherein, in General Formula (I), R0 represents a hydrogen atom or a methyl group, and each of R1, R2, and R3 independently represents a straight chain or branched alkyl group.

摘要翻译： 本发明的光化射线敏感性或辐射敏感性树脂组合物包括具有由通式（I）表示的重复单元（a）的树脂（P），通过光化射线照射产生有机酸的化合物（B） 或辐射，和1质量％以上的具有氟原子和硅原子中的至少一个并且与树脂（P）不同的树脂（C）相对于光化射线敏感的总固体或 辐射敏感性树脂组合物，其中，在通式（I）中，R 0表示氢原子或甲基，R 1，R 2和R 3各自独立地表示直链或支链烷基。

公开(公告)号：US09150556B2

公开(公告)日：2015-10-06

申请号：US12596152

申请日：2008-05-15

申请人： Asitha Abeywardane ,  Brian Nicholas Cook ,  Stephane De Lombaert ,  Michel Jose Emmanuel ,  Xin Guo ,  Ming-Hong Hao ,  Jin Mi Kim ,  Ho Yin Lo ,  Chuk Chui Man ,  Tina Marie Morwick ,  Peter Allen Nemoto ,  Kevin Chungeng Qian ,  Hidenori Takahashi ,  Steven John Taylor

发明人： Asitha Abeywardane ,  Brian Nicholas Cook ,  Stephane De Lombaert ,  Michel Jose Emmanuel ,  Xin Guo ,  Ming-Hong Hao ,  Jin Mi Kim ,  Ho Yin Lo ,  Chuk Chui Man ,  Tina Marie Morwick ,  Peter Allen Nemoto ,  Kevin Chungeng Qian ,  Hidenori Takahashi ,  Steven John Taylor

IPC分类号： C07D235/26 ,  C07D401/14 ,  C07D403/06 ,  C07D403/14 ,  C07D405/12 ,  C07D409/06 ,  C07D409/12 ,  C07D409/14 ,  C07D413/06 ,  C07D417/06 ,  C07D417/14 ,  C07D471/04

CPC分类号： C07D409/06 ,  C07D235/26 ,  C07D401/14 ,  C07D403/06 ,  C07D403/14 ,  C07D405/12 ,  C07D409/12 ,  C07D409/14 ,  C07D413/06 ,  C07D417/06 ,  C07D417/14 ,  C07D471/04

摘要： Disclosed are small molecule inhibitors which are useful in treating various diseases and conditions involving chymase.

摘要翻译： 公开了可用于治疗涉及胃促胰酶的各种疾病和病症的小分子抑制剂。

公开(公告)号：US09052590B2

公开(公告)日：2015-06-09

申请号：US13393173

申请日：2010-08-31

申请人： Hidenori Takahashi ,  Shuji Hirano ,  Takayuki Ito ,  Hideaki Tsubaki

发明人： Hidenori Takahashi ,  Shuji Hirano ,  Takayuki Ito ,  Hideaki Tsubaki

IPC分类号： G03F7/004 ,  G03F7/00 ,  G03F7/20 ,  G03F7/039

CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/20

摘要： According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes a resin (P) containing not only at least one repeating unit (A) that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid and is expressed by any of general formulae (I) to (III) below but also a repeating unit (B) containing at least an aromatic ring group provided that the repeating unit (B) does not include any of those of general formulae (I) to (III). (The characters used in general formulae (I) to (III) have the meanings mentioned in the description.)

摘要翻译： 根据一个实施方案，光化射线或辐射敏感性树脂组合物包括不仅含有至少一个重复单元（A）的树脂（P），当暴露于光化射线或辐射时，其被分解，从而产生酸， 由下述通式（I）〜（III）中的任何一个表示，但也包含至少含有芳环基的重复单元（B），条件是重复单元（B）不包括通式（I） 至（III）。 （通式（I）〜（III）中使用的字符具有说明书中提及的含义。）

公开(公告)号：US09005870B2

公开(公告)日：2015-04-14

申请号：US13015169

申请日：2011-01-27

申请人： Hidenori Takahashi ,  Shuji Hirano ,  Hideaki Tsubaki

发明人： Hidenori Takahashi ,  Shuji Hirano ,  Hideaki Tsubaki

IPC分类号： G03F7/004 ,  G03F7/039 ,  G03F7/20

CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041

摘要： According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes a resin (P) containing a repeating unit (A) that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid and at least two types of repeating units B1), (B2) that when acted on by an acid, are decomposed to thereby generate an alkali-soluble group, wherein the alkali-soluble group generated by the repeating unit (B1) is different from the alkali-soluble group generated by the repeating unit (B2).

摘要翻译： 根据一个实施方案，光化射线或辐射敏感性树脂组合物包括含有重复单元（A）的树脂（P），其在暴露于光化射线或辐射时被分解，从而产生酸和至少两种类型 重复单元B1），（B2），当被酸作用时分解，从而产生碱溶性基团，其中由重复单元（B1）产生的碱溶性基团不同于碱溶性基团 由重复单元（B2）生成。

公开(公告)号：US20140127627A1

公开(公告)日：2014-05-08

申请号：US13669530

申请日：2012-11-06

申请人： Takayuki Ito ,  Hidenori Takahashi ,  Tomotaka Tsuchimura ,  Shohei Kataoka ,  Takeshi Inasaki

发明人： Takayuki Ito ,  Hidenori Takahashi ,  Tomotaka Tsuchimura ,  Shohei Kataoka ,  Takeshi Inasaki

IPC分类号： G03F7/004

CPC分类号： G03F7/004 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/20

摘要： Provided is an actinic ray-sensitive or radiation-sensitive resin composition, a resist film formed with the composition, and a pattern-forming method using the same. The actinic ray-sensitive or radiation-sensitive resin composition includes (P) a resin that contains the following repeating units (A), (B) and (C); and a solvent having a boiling temperature of 150° C. or less, (A) a repeating unit containing a group capable of decomposing and forming an acid upon irradiation with an actinic ray or radiation, (B) a repeating unit containing a group capable of decomposing and forming a carboxylic acid by the action of an acid, and (C) a repeating unit containing a carbon-carbon unsaturated bond.

摘要翻译： 提供了一种光化射线敏感或辐射敏感性树脂组合物，由该组合物形成的抗蚀剂膜和使用其的图案形成方法。 光化射线敏感性或辐射敏感性树脂组合物包含（P）含有以下重复单元（A），（B）和（C）的树脂; 和沸点为150℃以下的溶剂，（A）含有能够在光化射线或辐射照射时能够分解形成酸的基团的重复单元，（B）含有能够具有基团的重复单元 通过酸的作用分解和形成羧酸，和（C）含有碳 - 碳不饱和键的重复单元。