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    Method for cutting object to be processed
    1.
    发明授权
    Method for cutting object to be processed 有权
    切割待处理物体的方法

    公开(公告)号：US09302410B2

    公开(公告)日：2016-04-05

    申请号：US13383487

    申请日：2010-07-21

    申请人： Hideki Shimoi ,  Naoki Uchiyama ,  Daisuke Kawaguchi

    发明人： Hideki Shimoi ,  Naoki Uchiyama ,  Daisuke Kawaguchi

    IPC分类号： B32B38/04 ,  B28D5/00 ,  B23K26/00 ,  H01L21/78 ,  B23K26/40

    CPC分类号： B32B37/06 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/00 ,  B28D5/0011 ,  B32B38/0004 ,  H01L21/78 ,  Y10T29/49002 ,  Y10T29/49787 ,  Y10T156/1052

    摘要： A silicon substrate 12 has a main face in a (100) plane, whereby a fracture 17 generated from a molten processed region 13 acting as a start point extends in a cleavage direction of the silicon substrate 12 (a direction orthogonal to the main face of the silicon substrate 12). Here, a rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby the fracture 17 reaches a front face 1a of the object 1A continuously without substantially changing its direction. When generating a stress in the object for separation 10A, the fracture 17 has reached a rear face 10b of the object for separation 10A and thus easily extends toward the object 1A.

    摘要翻译： 硅基板12具有（100）面内的主面，由作为起点的熔融处理区域13产生的断裂线17沿硅基板12的切割方向（与 硅衬底12）。 这里，待处理物体1A的后表面1b和待加工物体10A的前面10a通过阳极接合彼此接合，从而断裂17连续地到达物体1A的前表面1a 而不会大幅改变其方向。 当在分离对象物10A中产生应力时，断裂部17已到达分离对象物10A的背面10b，因此容易向物体1A延伸。

    METHOD FOR CUTTING OBJECT TO BE PROCESSED
    2.
    发明申请
    METHOD FOR CUTTING OBJECT TO BE PROCESSED 有权
    切割对象要处理的方法

    公开(公告)号：US20120111495A1

    公开(公告)日：2012-05-10

    申请号：US13383487

    申请日：2010-07-21

    申请人： Hideki Shimoi ,  Naoki Uchiyama ,  Daisuke Kawaguchi

    发明人： Hideki Shimoi ,  Naoki Uchiyama ,  Daisuke Kawaguchi

    IPC分类号： B32B38/04 ,  B32B37/02 ,  B26F3/00 ,  B23P17/00 ,  H05K13/00

    CPC分类号： B32B37/06 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/00 ,  B28D5/0011 ,  B32B38/0004 ,  H01L21/78 ,  Y10T29/49002 ,  Y10T29/49787 ,  Y10T156/1052

    摘要： A silicon substrate 12 has a main face in a (100) plane, whereby a fracture 17 generated from a molten processed region 13 acting as a start point extends in a cleavage direction of the silicon substrate 12 (a direction orthogonal to the main face of the silicon substrate 12). Here, a rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby the fracture 17 reaches a front face 1a of the object 1A continuously without substantially changing its direction. When generating a stress in the object for separation 10A, the fracture 17 has reached a rear face 10b of the object for separation 10A and thus easily extends toward the object 1A.

    摘要翻译： 硅基板12具有（100）面内的主面，由作为起点的熔融处理区域13产生的断裂线17沿硅基板12的切割方向（与 硅衬底12）。 这里，待处理物体1A的后表面1b和待加工物体10A的前面10a通过阳极接合彼此接合，从而断裂17连续地到达物体1A的前表面1a 而不会大幅改变其方向。 当在分离对象物10A中产生应力时，断裂部17已到达分离对象物10A的背面10b，因此容易向物体1A延伸。

    METHOD FOR CUTTING PROCESSING TARGET
    4.
    发明申请
    METHOD FOR CUTTING PROCESSING TARGET 有权
    切割加工目标的方法

    公开(公告)号：US20120104066A1

    公开(公告)日：2012-05-03

    申请号：US13383503

    申请日：2010-07-21

    申请人： Naoki Uchiyama ,  Daisuke Kawaguchi ,  Hideki Shimoi

    发明人： Naoki Uchiyama ,  Daisuke Kawaguchi ,  Hideki Shimoi

    IPC分类号： B26F3/00 ,  B23K26/38

    CPC分类号： B28D5/00 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  C03B33/0222 ,  C03B33/07 ,  H01L21/78 ,  Y10T225/12

    摘要： A rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby a fracture 17 generated in a thickness direction of the object for separation 10A from a molten processed region 13 acting as a start point reaches a front face 1a of the object 1A continuously without substantially changing its direction. Then, after cutting the objects 1A, 10A, the object 10A is removed from the object 1A, so as to yield chips 19.

    摘要翻译： 待处理物体1A的后表面1b和待加工物体10A的前面10a通过阳极接合彼此接合，由此在分离物10A的厚度方向上产生的断裂17 作为起点的熔融处理区域13连续地到达物体1A的正面1a，而基本上不改变其方向。 然后，在切割物体1A，10A之后，将物体10A从物体1A移除，从而产生碎片19。

    Working method for cutting
    5.
    发明授权
    Working method for cutting 有权
    切割工作方法

    公开(公告)号：US08603351B2

    公开(公告)日：2013-12-10

    申请号：US12601090

    申请日：2008-05-23

    申请人： Takeshi Sakamoto ,  Hideki Shimoi ,  Naoki Uchiyama

    发明人： Takeshi Sakamoto ,  Hideki Shimoi ,  Naoki Uchiyama

    IPC分类号： B44C1/22

    CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/67132 ,  H01L21/78

    摘要： An object to be processed is reliably cut along a line to cut. An object to be processed is irradiated with laser light while locating a converging point at the object, so as to form a modified region in the object along a line to cut. The object formed with the modified region is subjected to an etching process utilizing an etching liquid exhibiting a higher etching rate for the modified region than for an unmodified region, so as to etch the modified region. This can etch the object selectively and rapidly along the line to cut by utilizing a higher etching rate in the modified region.

    摘要翻译： 待切割的物体沿切割线可靠切割。 在将会聚点定位在物体的同时用激光照射待处理物体，以沿着切割线在物体中形成改质区域。 用改性区域形成的物体经受蚀刻处理，利用对修饰区域表现出比对于未改性区域更高的蚀刻速率的蚀刻液体，以蚀刻修饰区域。 这可以通过在改质区域中利用较高的蚀刻速率沿切割线选择性地和快速地蚀刻物体。

    LASER PROCESSING METHOD
    6.
    发明申请
    LASER PROCESSING METHOD 审中-公开
    激光加工方法

    公开(公告)号：US20120299219A1

    公开(公告)日：2012-11-29

    申请号：US13389676

    申请日：2011-05-27

    申请人： Hideki Shimoi ,  Keisuke Araki ,  Naoki Uchiyama

    发明人： Hideki Shimoi ,  Keisuke Araki ,  Naoki Uchiyama

    IPC分类号： B29C35/08

    CPC分类号： H01L21/30604 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  C03C15/00 ,  C03C23/0025 ,  H01L21/30608 ,  H01L21/30612 ,  H01L21/30617

    摘要： The present invention provides a laser processing method which improves strength and quality of an object to be processed after working. In the present embodiment, after modified regions 7 are formed along the outlines of hollowed-out portions Q1 and Q2 in the object 1 by irradiating the object 1 with a laser light, etching is performed onto the object 1 to selectively advance etching along a fracture which is contained in the modified regions 7 or extend from the modified regions 7, and the hollowed-out portions Q1 and Q2 are spaced and moved from the object 1. Here, the modified regions 7 are formed so as to connect to each other along the outlines of the hollowed-out portions Q1 and Q2, and further exposed on a surface 3 side of the object 1. In this way, in the present embodiment, it is possible to perform working so as to hollow out the hollowed-out portions Q1 and Q2 from the object 1 without applying external stress, and it is possible to remove the fracture generated according to the formation of the modified regions 7 by etching.

    摘要翻译： 本发明提供一种提高加工后的被处理物的强度和质量的激光加工方法。 在本实施方式中，通过用激光照射物体1，沿着物体1的中空部分Q1和Q2的轮廓形成改性区域7之后，对物体1进行蚀刻以选择性地进行沿断裂的蚀刻 其被包含在改质区域7中或者从改质区域7延伸出来，并且中空部分Q1和Q2从物体1间隔开并移动。这里，改性区域7形成为沿着彼此连接 中空部分Q1和Q2的轮廓，并且进一步暴露在物体1的表面3侧上。以这种方式，在本实施例中，可以进行加工，以便将中空部分 Q1和Q2，而不施加外部应力，并且可以通过蚀刻去除根据改质区域7的形成产生的断裂。

    WORKING METHOD FOR CUTTING
    7.
    发明申请
    WORKING METHOD FOR CUTTING 有权
    切割工作方法

    公开(公告)号：US20100136766A1

    公开(公告)日：2010-06-03

    申请号：US12601090

    申请日：2008-05-23

    申请人： Takeshi Sakamoto ,  Hideki Shimoi ,  Naoki Uchiyama

    发明人： Takeshi Sakamoto ,  Hideki Shimoi ,  Naoki Uchiyama

    IPC分类号： H01L21/78

    CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/67132 ,  H01L21/78

    摘要： An object to be processed is reliably cut along a line to cut. An object to be processed is irradiated with laser light while locating a converging point at the object, so as to form a modified region in the object along a line to cut. The object formed with the modified region is subjected to an etching process utilizing an etching liquid exhibiting a higher etching rate for the modified region than for an unmodified region, so as to etch the modified region. This can etch the object selectively and rapidly along the line to cut by utilizing a higher etching rate in the modified region.

    摘要翻译： 待切割的物体沿切割线可靠切割。 在将会聚点定位在物体的同时用激光照射待处理物体，以沿着切割线在物体中形成改质区域。 用改性区域形成的物体经受蚀刻处理，利用对修饰区域表现出比对于未改性区域更高的蚀刻速率的蚀刻液体，以蚀刻修饰区域。 这可以通过在改质区域中利用较高的蚀刻速率沿切割线选择性地和快速地蚀刻物体。

    Laser processing method
    8.
    发明授权
    Laser processing method 有权
    激光加工方法

    公开(公告)号：US08969752B2

    公开(公告)日：2015-03-03

    申请号：US10548522

    申请日：2003-09-11

    申请人： Kenshi Fukumitsu ,  Fumitsugu Fukuyo ,  Naoki Uchiyama

    发明人： Kenshi Fukumitsu ,  Fumitsugu Fukuyo ,  Naoki Uchiyama

    IPC分类号： B23K15/00 ,  B23K26/00 ,  B23K26/04 ,  B23K26/14 ,  B23K26/06 ,  B23K26/02 ,  B23K9/12 ,  G01B15/00 ,  H05B6/00 ,  B23P19/00 ,  C22F3/00 ,  C23C8/00 ,  B28D5/00 ,  B28D1/22 ,  B23K26/40

    CPC分类号： B28D5/0011 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  B28D5/0052 ,  Y10S148/903 ,  Y10T29/49254 ,  Y10T29/53465

    摘要： The present invention provides a laser processing method comprising the steps of attaching a protective tape 25 to a front face 3 of a wafer 1a, irradiating a substrate 15 with laser light L while employing a rear face of the wafer 1a as a laser light entrance surface and locating a light-converging point P within the substrate 15 so as to form a molten processed region 13 due to multiphoton absorption, causing the molten processed region 13 to form a cutting start region 8 inside by a predetermined distance from the laser light entrance surface along a line 5 along which the object is intended to be cut in the wafer 1a, attaching an expandable tape 23 to the rear face 21 of the wafer 1a, and expanding the expandable tape 23 so as to separate a plurality of chip parts 24 produced upon cutting the wafer 1a from the cutting start region 8 acting as a start point from each other.

    摘要翻译： 本发明提供了一种激光加工方法，包括以下步骤：将保护带25附接到晶片1a的正面3，将基片15照射激光L同时使用晶片1a的背面作为激光入射面 并且将聚光点P定位在基板15内，以便由于多光子吸收而形成熔融处理区域13，使得熔融处理区域13在距激光入射面一定距离处形成切割起始区域8 沿着在该晶片1a上要切割物体的线5，将可膨胀带23附接到晶片1a的后表面21，并且使可扩张带23膨胀以分离生产的多个芯片部分24 在从作为起点的切割起始区域8切割晶片1a时。

    Working object cutting method
    10.
    发明授权
    Working object cutting method 有权
    工作对象切割方法

    公开(公告)号：US08828306B2

    公开(公告)日：2014-09-09

    申请号：US12744727

    申请日：2008-11-18

    申请人： Naoki Uchiyama

    发明人： Naoki Uchiyama

    IPC分类号： B29C35/08 ,  H01L21/78 ,  B23K26/08 ,  B23K26/00 ,  B23K26/40

    CPC分类号： B23K26/53 ,  B23K26/0823 ,  B23K26/38 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/78

    摘要： A working object cutting method capable of cutting a working object precisely is provided. The working object cutting method comprises irradiating a working object 1 with a laser beam while locating a converging point at the working object, so as to form a reformed region in the working object 1 along a reformed-region forming line 15 set at a predetermined distance inside from an outer edge E of the working object 1 along the outer edge, forming a cutting reformed region in the working object 1 along a cutting-scheduled line 5, and cutting the working object 1 along the cutting-scheduled line 5 from a cutting reformed region acting as a start point. Thus forming the working object 1 with the reformed region along the reformed-region forming line 15 set at a predetermined distance inside from the outer edge E of the working object 1 allows the formed reformed region or fissures extending therefrom to inhibit fissures generated in an outer edge portion 25 of the working object 1 from extending to the inside even if a cutting stress is applied to the working object 1 when cutting the working object 1.

    摘要翻译： 提供了能够精确地切割加工对象物的工件对象切断方法。 工作对象切割方法包括：将加工对象物1与激光束对准，同时将加工点定位在加工对象上，以沿着设置在预定距离处的重整区域形成线15在加工对象物1中形成重整区域 沿着外缘从工作对象物1的外边缘E向内侧，沿着切断预定线5在加工对象物1上形成切割重整区域，并且沿切割预定线5切割加工对象物1， 改革区域作为起点。 因此，通过设置在与工作对象1的外边缘E相距预定距离的重整区域形成线15的工作对象1，能够使形成的重整区域或从其延伸的裂缝抑制在外部产生的裂缝 即使当切割加工对象1时对加工对象物1施加切削应力时，加工对象物1的边缘部分25也向内延伸。