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10 条记录 (耗时 0.032 秒)

    Sense amplifier and reading circuit with sense amplifier
    1.
    发明授权
    Sense amplifier and reading circuit with sense amplifier 失效
    感应放大器和读出电路与读出放大器

    公开(公告)号：US5729499A

    公开(公告)日：1998-03-17

    申请号：US790953

    申请日：1997-01-29

    申请人： Hideo Fujiwara ,  Seiji Yamanaka ,  Toshihisa Nagata ,  Hiizu Okubo

    发明人： Hideo Fujiwara ,  Seiji Yamanaka ,  Toshihisa Nagata ,  Hiizu Okubo

    IPC分类号： G11C7/06 ,  G11C11/40

    CPC分类号： G11C7/067 ,  G11C7/065

    摘要： A state control portion causes a sense amplifier portion to be at an active state and for causing the sense amplifier to be at an inactive state. A feedback portion causes the control device to causing the sense amplifier portion to be in the inactive state when a path is formed between a power source and a ground in the sense amplifier. A latch portion holds an output of the sense amplifier output when the path is formed. The state control portion comprises a first transistor acting as a switching device. The feedback portion produces a control signal using an output of the sense amplifier portion and a clock signal obtained from a detection circuit, and supplies the control signal to the first transistor. A second transistor for precharging is connected between the first transistor and the power source.

    摘要翻译： 状态控制部分使得感测放大器部分处于活动状态并且使感测放大器处于非活动状态。 当在感测放大器中的电源和地之间形成路径时，反馈部分使得控制装置使感测放大器部分处于非活动状态。 当形成路径时，锁存部分保持读出放大器输出的输出。 状态控制部分包括用作开关装置的第一晶体管。 反馈部分使用读出放大器部分的输出和从检测电路获得的时钟信号产生控制信号，并将控制信号提供给第一晶体管。 用于预充电的第二晶体管连接在第一晶体管和电源之间。

    Sense amplifier and reading circuit with sense amplifier
    2.
    发明授权
    Sense amplifier and reading circuit with sense amplifier 失效

    公开(公告)号：US5737273A

    公开(公告)日：1998-04-07

    申请号：US630929

    申请日：1996-04-05

    申请人： Hideo Fujiwara ,  Seiji Yamanaka ,  Toshihisa Nagata ,  Hiizu Okubo

    发明人： Hideo Fujiwara ,  Seiji Yamanaka ,  Toshihisa Nagata ,  Hiizu Okubo

    IPC分类号： G11C7/06 ,  H01L27/10

    CPC分类号： G11C7/067 ,  G11C7/065

    摘要： A state control portion causes a sense amplifier portion to be at an active state and for causing the sense amplifier to be at an inactive state. A feedback portion causes the control device to causing the sense amplifier portion to be in the inactive state when a path is formed between a power source and a ground in the sense amplifier. A latch portion holds an output of the sense amplifier output when the path is formed. The state control portion comprises a first transistor acting as a switching device. The feedback portion produces a control signal using an output of the sense amplifier portion and a clock signal obtained from a detection circuit, and supplies the control signal to the first transistor. A second transistor for precharging is connected between the first transistor and the power source.

    Array of field effect transistors of different threshold voltages in same semiconductor integrated circuit
    3.
    发明授权
    Array of field effect transistors of different threshold voltages in same semiconductor integrated circuit 失效
    同一半导体集成电路中不同阈值电压的场效应晶体管阵列

    公开(公告)号：US5285069A

    公开(公告)日：1994-02-08

    申请号：US795834

    申请日：1991-11-21

    申请人： Mitsuo Kaibara ,  Hiizu Okubo ,  Takako Maruyama ,  Seiji Yamanaka ,  Hideyuki Aota

    发明人： Mitsuo Kaibara ,  Hiizu Okubo ,  Takako Maruyama ,  Seiji Yamanaka ,  Hideyuki Aota

    IPC分类号： H01L27/118 ,  H01L29/76 ,  H01L23/62 ,  H01L27/10 ,  H01L27/11

    CPC分类号： H01L27/11807 ,  Y10S257/903

    摘要： A semiconductor integrated circuit apparatus has a basic cell region formed by arranging a plurality of basic cells each including a MOS transistor in longitudinal and transversal directions. The MOS transistor has source-drain section diffusive regions formed on a semiconductor substrate, and a gate electrode formed on a channel region between these source-drain section diffusive regions through a gate insulating film. One portion or all of the channel region of at least one MOS transistor within the basic cell region has an impurity concentration different from that in the channel region of another MOS transistor of the same conductivity type within the same basic cell. For example, a threshold voltage in the channel region of a MOS transistor is increased until about 6 volts by implanting ions into the channel region. No MOS transistor is operated at a power voltage such as 5 volts and separates MOS transistors on both sides thereof from each other. Wiring is formed on the MOS transistor and the gate electrode is used as the wiring, thereby improving wiring efficiency.

    摘要翻译： 半导体集成电路装置具有通过在纵向和横向上布置包括MOS晶体管的多个基本单元而形成的基本单元区域。 MOS晶体管具有形成在半导体衬底上的源极 - 漏极部扩散区域，以及通过栅极绝缘膜形成在这些源 - 漏部扩散区域之间的沟道区上的栅电极。 在基本单元区域内的至少一个MOS晶体管的沟道区域的一部分或全部具有与同一基本单元内的相同导电类型的另一个MOS晶体管的沟道区域中的杂质浓度不同的杂质浓度。 例如，MOS晶体管的通道区域中的阈值电压通过将离子注入沟道区而增加直到约6伏特。 没有MOS晶体管在诸如5伏的电源电压下操作，并且将其两侧的MOS晶体管彼此分离。 在MOS晶体管上形成接线，并且使用栅电极作为布线，从而提高布线效率。

    Method for forming thermistor thin film
    9.
    发明授权
    Method for forming thermistor thin film 失效
    形成热敏电阻薄膜的方法

    公开(公告)号：US5273776A

    公开(公告)日：1993-12-28

    申请号：US984216

    申请日：1992-11-30

    申请人： Tadashi Yonezawa ,  Seiji Yamanaka ,  Takeshi Soe

    发明人： Tadashi Yonezawa ,  Seiji Yamanaka ,  Takeshi Soe

    IPC分类号： C23C18/12 ,  B05D5/12

    CPC分类号： C04B41/87 ,  C04B41/009 ,  C04B41/5027 ,  C23C18/1216 ,  H01C17/06533 ,  H01C17/06593 ,  H01C7/043 ,  C04B2111/00844

    摘要： A thermistor film is prepared by first preparing an alcohol solution is prepared by dissolving a metal compound in one or more kinds of polyvalent alcohols selected from the group consisting of ethylene glycol, diethylene glycol and glycerin. A coating solution is then prepared by adding and mixing an organic acid having a carboxyl group to the alcohol solution. The coating solution is coated on the surface of a heat-resistant substrate to form a coating film, the substrate on which the coating film is formed is dried and subjected to heat treatment to form a composite oxide precursor containing a metal of the above metal compound, and the precursor is calcined at a temperature of 600.degree. to 1000.degree. C. The method of the present invention can form a thermistor thin film which is dense and uniform over a wide range by simple and easy operations at a low cost.

    摘要翻译： 通过首先制备醇溶液来制备热敏电阻膜，其通过将金属化合物溶解在选自乙二醇，二甘醇和甘油的一种或多种多元醇中来制备。 然后通过向醇溶液中加入并混合具有羧基的有机酸来制备涂布溶液。 将涂布溶液涂布在耐热基材的表面上以形成涂膜，将形成有涂膜的基材干燥并进行热处理，形成含有上述金属化合物的金属的复合氧化物前体 ，并将前体在600℃〜1000℃的温度下煅烧。本发明的方法可以通过简单且容易的操作以低成本形成在宽范围内致密且均匀的热敏电阻薄膜。

    Method of preparing ceramic microspheres
    10.
    发明授权
    Method of preparing ceramic microspheres 失效
    制备陶瓷微球的方法

    公开(公告)号：US5071635A

    公开(公告)日：1991-12-10

    申请号：US638135

    申请日：1991-01-04

    申请人： Seiji Yamanaka ,  Yasuyuki Ogata ,  Kohji Shirota

    发明人： Seiji Yamanaka ,  Yasuyuki Ogata ,  Kohji Shirota

    IPC分类号： C01B13/32 ,  C01G25/00 ,  C01G25/02

    CPC分类号： B82Y30/00 ,  C01B13/328 ,  C01G25/00 ,  C01G25/02 ,  C01P2002/34 ,  C01P2004/32 ,  C01P2004/52 ,  C01P2004/62 ,  C01P2004/64

    摘要： A manufacturing method for ceramic microspheres including the steps of; mixing an oil which is immiscible with an aqueous solution of a water-soluble metallic compound and which has a boiling point higher than that of water in the aqueous solution; applying ultrasonic vibration to the mixed solution to form a water-in-oil type emulsion; heating the emulsion at a temperature less than a boiling point of water to evaporate free water from droplets in which the water-soluble metallic compound is dissolved and to disperse spherical particles of the water-soluble metallic compound in the oil phase; and thereafter heating the dispersed solution at a temperature higher than the temperature at which the water-soluble metallic compound is decomposed to form a metallic oxide but lower than the temperature at which grain growth in the metallic oxide starts, to evaporate and decompose the oil and to remove the oil therefrom, thereby obtaining the metallic oxide microspheres.

    摘要翻译： 一种陶瓷微球的制造方法，包括以下步骤： 将与水溶性金属化合物的水溶液不混溶并且在水溶液中沸点高于水的油混合; 对混合溶液施加超声波振动以形成油包水型乳液; 在低于水沸点的温度下加热乳液，从溶解水溶性金属化合物的液滴中蒸发游离水，并将水溶性金属化合物的球形颗粒分散在油相中; 然后在高于水溶性金属化合物分解温度的温度下加热分散溶液，形成金属氧化物，但低于金属氧化物开始晶粒生长的温度，从而蒸发并分解油和 从中除去油，从而得到金属氧化物微球。