公开(公告)号：US5247198A

公开(公告)日：1993-09-21

申请号：US408722

申请日：1989-09-18

申请人： Hideo Homma ,  Ryuichi Saito ,  Takashi Akioka ,  Yutaka Kobayashi

发明人： Hideo Homma ,  Ryuichi Saito ,  Takashi Akioka ,  Yutaka Kobayashi

IPC分类号： H01L21/768 ,  H01L21/8238 ,  H01L27/092

CPC分类号： H01L21/823878 ,  H01L21/76895 ,  H01L21/823871 ,  H01L27/0928

摘要： A semiconductor integrated circuit device capable of having a high integration density and excellent performance and a method of fabricating the semiconductor integrated circuit device are disclosed. In this semiconductor integrated circuit device, a connecting conductor for connecting gate wiring which is formed on a field oxide film and extended from the gate of a MOSFET, to the source/drain region of another MOSFET is interposed between the gate wiring and one of two side space layers for defining the width of the gate wiring.

摘要翻译： 公开了一种能够具有高积分密度和优异性能的半导体集成电路器件以及制造半导体集成电路器件的方法。 在该半导体集成电路器件中，形成在场氧化膜上并从MOSFET的栅极延伸到另一MOSFET的源极/漏极区域的栅极布线的连接导体插入在栅极布线和两个栅极布线之一 侧面空间层，用于限定栅极布线的宽度。

公开(公告)号：US20050218424A1

公开(公告)日：2005-10-06

申请号：US11135417

申请日：2005-05-24

申请人： Hidekatsu Onose ,  Hideo Homma ,  Atsuo Watanabe

发明人： Hidekatsu Onose ,  Hideo Homma ,  Atsuo Watanabe

IPC分类号： H01L29/80 ,  H01L21/337 ,  H01L29/10 ,  H01L29/772 ,  H01L29/808 ,  H01L29/32

CPC分类号： H01L29/1066 ,  H01L29/1608 ,  H01L29/7722

摘要： A semiconductor switching device for an inverter includes a first conductivity type, low impurity concentration, semiconductor substrate having a band gap equal to or greater than 2.0 eV, a first conductivity type first region formed in a first plane of the substrate having a resistance lower than the substrate, a first electrode formed in another plane of the first region, a first conductivity type second region formed in a second plane of the substrate, and a second electrode formed on the second region. A trench is formed in the second plane, a control region is formed from a bottom of the trench into the substrate and a control electrode of a different conductivity type is formed on the control region. The second electrode is formed over the control electrode through an insulator film, and the control electrode is formed on the trench sidewalls so the control region contacts the second region.

摘要翻译： 用于逆变器的半导体开关器件包括第一导电类型，低杂质浓度，具有等于或大于2.0eV的带隙的半导体衬底，形成在衬底的第一平面中的电阻低于 所述基板，形成在所述第一区域的另一平面中的第一电极，形成在所述基板的第二平面中的第一导电类型的第二区域和形成在所述第二区域上的第二电极。 在第二平面中形成沟槽，控制区域从沟槽的底部形成到衬底中，并且在控制区域上形成不同导电类型的控制电极。 第二电极通过绝缘膜形成在控制电极上，并且控制电极形成在沟槽侧壁上，使得控制区域接触第二区域。

公开(公告)号：US5565918A

公开(公告)日：1996-10-15

申请号：US245414

申请日：1994-06-24

申请人： Hideo Homma ,  Kitahiro Kaneda ,  Kunihiko Yamada

发明人： Hideo Homma ,  Kitahiro Kaneda ,  Kunihiko Yamada

IPC分类号： H04N5/235 ,  H04N5/238

CPC分类号： H04N5/2352 ,  H04N5/2351

摘要： An exposure control device includes an area setting circuit which sets a light measuring area on a part of an image sensing plane; a judging circuit which detects a back light image plane on the basis of a difference in level between video signals corresponding to the inside and the outside of the light measuring area; a high luminance detecting circuit which detects a high luminance part of the image sensing plane on the basis of the video signals; and a control circuit arranged to have the light measuring area set on the image sensing plane excluding the high luminance part from the light measuring area by controlling the area setting circuit on the basis of the output of the high luminance detection circuit when the image sensing plane is judged to be a back light image plane by the judging circuit. The device is arranged to attach weight to the average levels of the signals of the inside and the outside of the light measuring area according to the result of comparison of these signals, to add the weighted average signal levels together and to perform exposure control according to the result of addition.

摘要翻译： 曝光控制装置包括：区域设定电路，其设置摄像面的一部分上的光测量区域; 判断电路，其基于与所述光测量区域的内部和外部相对应的视频信号之间的电平差来检测背光图像平面; 高亮度检测电路，其基于视频信号检测图像感测平面的高亮度部分; 以及控制电路，其被配置为通过基于所述高亮度检测电路的输出来控制所述区域设置电路，使得所述光测量区域设置在除了来自所述光测量区域的高亮度部分之外的所述图像感测平面上， 由判断电路判定为背光像平面。 该装置被配置为根据这些信号的比较结果将重量与光测量区域的内部和外部的信号的平均电平相加，以将加权的平均信号电平加在一起，并根据 加成的结果。

公开(公告)号：US5272538A

公开(公告)日：1993-12-21

申请号：US582798

申请日：1990-09-13

申请人： Hideo Homma ,  Akihiro Fujiwara ,  Hirofumi Suda ,  Kunihiko Yamada ,  Masamichi Toyama ,  Kunio Imai

发明人： Hideo Homma ,  Akihiro Fujiwara ,  Hirofumi Suda ,  Kunihiko Yamada ,  Masamichi Toyama ,  Kunio Imai

IPC分类号： H04N5/235 ,  H04N5/238

CPC分类号： H04N5/238 ,  H04N5/2351

摘要： An exposure control device for performing exposure control on the basis of a video signal obtained from a light measuring area set within an image sensing plane is provided with a determining circuit which determines the position of a photographed object within the image sensing plane from the values of a specific component of the video signal obtained from the inside and outside of a detection area the position of which is variably set within the image sensing plane. The light measuring area is set in the object's position within the image sensing plane detected by the determining circuit. The exposure control device is provided further with a changing circuit which detects the size of the object on the image sensing plane and changes the size of the light measuring area accordingly, and a weighting circuit which performs for light measurement a weighting operation on video signals obtained from the inside and outside of the light measuring area.

摘要翻译： 用于根据从摄像平面内设置的光测量区域获得的视频信号进行曝光控制的曝光控制装置设置有确定电路，该确定电路从摄像平面内的拍摄对象的位置确定 从其位置可变地设置在图像感测平面内的检测区域的内部和外部获得的视频信号的特定分量。 光测量区域被设置在由确定电路检测到的图像感测平面内的物体的位置。 该曝光控制装置还具有检测图像检测面上的物体的尺寸并相应地改变光测量区域的尺寸的改变电路，以及用于对所获得的视频信号进行光测量加权操作的加权电路 从光测量区域的内部和外部。

公开(公告)号：US07837343B2

公开(公告)日：2010-11-23

申请号：US11808077

申请日：2007-06-06

申请人： Toshinari Shibasaki ,  Hideo Homma ,  Katsusuke Shimazaki ,  Masaya Adachi ,  Sukekazu Aratani

发明人： Toshinari Shibasaki ,  Hideo Homma ,  Katsusuke Shimazaki ,  Masaya Adachi ,  Sukekazu Aratani

IPC分类号： F21V9/16

CPC分类号： G09G3/20 ,  G02B3/005 ,  G02B26/08 ,  G09G2300/0439 ,  G09G2320/028

摘要： An illuminating device includes a light-condensing sheet, a light-emitting portion, and a control unit. The light-condensing sheet includes a plurality of lenses each with a light-condensing function ranged on a light transmittance substrate. The light-emitting portion is opposed to the light-condensing sheet and includes light-emitting areas with respective dimensions. The control unit switches a luminous state of the light-emitting area to a non-luminous state or vice versa. A display device is provided with the illuminating device described above.

摘要翻译： 照明装置包括聚光片，发光部和控制单元。 聚光片包括在透光性基板上具有聚光功能的多个透镜。 发光部分与聚光片相对，并且包括各自尺寸的发光区域。 控制单元将发光区域的发光状态切换到非发光状态，反之亦然。 具有上述照明装置的显示装置。

公开(公告)号：US6124891A

公开(公告)日：2000-09-26

申请号：US278645

申请日：1994-07-21

申请人： Hideo Homma ,  Akihiro Fujiwara ,  Hirofumi Suda ,  Kunihiko Yamada ,  Masamichi Toyama ,  Kunio Imai

发明人： Hideo Homma ,  Akihiro Fujiwara ,  Hirofumi Suda ,  Kunihiko Yamada ,  Masamichi Toyama ,  Kunio Imai

IPC分类号： H04N5/235 ,  H04N5/238

CPC分类号： H04N5/2351

摘要： An exposure control device for performing exposure control on the basis of a video signal obtained from a light measuring area set within an image sensing plane is provided with a determining circuit which determines the position of a photographed object within the image sensing plane from the values of a specific component of the video signal obtained from the inside and outside of a detection area the position of which is variably set within the image sensing plane. The light measuring area is set in the object's position within the image sensing plane detected by the determining circuit. The exposure control device is provided further with a changing circuit which detects the size of the object on the image sensing plane and changes the size of the light measuring area accordingly, and a weighting circuit which performs for light measurement a weighting operation on video signals obtained from the inside and outside of the light measuring area.

摘要翻译： 用于根据从摄像平面内设置的光测量区域获得的视频信号进行曝光控制的曝光控制装置设置有确定电路，该确定电路从摄像平面内的拍摄对象的位置确定 从其位置可变地设置在图像感测平面内的检测区域的内部和外部获得的视频信号的特定分量。 光测量区域被设置在由确定电路检测到的图像感测平面内的物体的位置。 该曝光控制装置还具有检测图像检测面上的物体的尺寸并相应地改变光测量区域的尺寸的改变电路，以及用于对所获得的视频信号进行光测量加权操作的加权电路 从光测量区域的内部和外部。

公开(公告)号：US5926292A

公开(公告)日：1999-07-20

申请号：US883155

申请日：1997-06-26

申请人： Hisashi Ishikawa ,  Hideo Homma ,  Yoshitake Nagashima ,  Takashi Saito

发明人： Hisashi Ishikawa ,  Hideo Homma ,  Yoshitake Nagashima ,  Takashi Saito

IPC分类号： G06T9/00 ,  H04N1/41 ,  H04N1/64 ,  H04N1/40

CPC分类号： H04N1/41 ,  G06T9/005 ,  H04N1/4105 ,  H04N1/642

摘要： An image processing apparatus has a memory device for storing pixel image data including both halftone image data such as data of image of a photograph having a gradation and line image data such as data of text containing characters. The storage is conducted on the basis of blocks each having a predetermined number of pixels. The mean information quantity of the halftone image data per pixel stored in the memory means is not greater than the information quantity of the line image data per pixel stored in the memory means. The halftone image data being compressed on the basis of the block. Therefore, both the halftone image data and line image data can be stored in a small memory by using common addresses, without causing any degradation of the image quality.

公开(公告)号：US4735916A

公开(公告)日：1988-04-05

申请号：US13252

申请日：1987-02-10

申请人： Hideo Homma ,  Yutaka Misawa ,  Naohiro Momma

发明人： Hideo Homma ,  Yutaka Misawa ,  Naohiro Momma

IPC分类号： H01L27/06 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/331 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8249 ,  H01L29/73 ,  H01L29/732 ,  H01L29/78 ,  H01L21/385

CPC分类号： H01L29/66272 ,  H01L21/0337 ,  H01L21/32137 ,  H01L21/8249 ,  H01L29/41783 ,  H01L29/6659 ,  H01L29/78 ,  H01L29/66545

摘要： A method of fabricating a semiconductor device includes the steps of: forming at least one first semiconductor region of a first conductivity type and at least one second semiconductor region of a second conductivity type in a main surface of a semiconductor layer of the first conductivity type; forming a three-layer film having a desired shape on each of the first and second semiconductor regions, the three-layer film being made up of a bottom layer which is a conductive film, an intermediate layer which is a silicon nitride film, and a top layer which is a polycrystalline silicon film doped with one of arsenic and phosphorus; forming a first insulating layer on the side wall of the three-layer film; forming a second polycrystalline silicon film on the whole surface, and diffusing one of arsenic and phosphorus from the first polycrystalline silicon film into the second polycrystalline silicon film; selectively etching off the first polycrystalline silicon film and that portion of the second polycrystalline silicon film, in which one of arsenic and phosphorus has been diffused; forming a second insulating layer at least on the surface of the portion of the second polycrystalline silicon film which exists on the second semiconductor region; removing the silicon nitride film and the conductive film which exist on the second semiconductor region, while using the second insulating layer as a mask, to form an aperture; and forming a third polycrystalline silicone film so that the aperture is covered by the third polycrystalline silicon film.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在第一导电类型的半导体层的主表面中形成第一导电类型的至少一个第一半导体区域和第二导电类型的至少一个第二半导体区域; 在第一和第二半导体区域中的每一个上形成具有期望形状的三层膜，该三层膜由作为导电膜的底层，作为氮化硅膜的中间层和 顶层，其是掺杂有砷和磷之一的多晶硅膜; 在三层膜的侧壁上形成第一绝缘层; 在整个表面上形成第二多晶硅膜，并将砷和磷中的一种从第一多晶硅膜扩散到第二多晶硅膜中; 选择性地蚀刻出第一多晶硅膜和其中砷和磷之一已经扩散的第二多晶硅膜的那部分; 至少在所述第二半导体区域上存在的所述第二多晶硅膜的所述部分的表面上形成第二绝缘层; 在使用第二绝缘层作为掩模的同时，除去存在于第二半导体区域上的氮化硅膜和导电膜，以形成孔径; 以及形成第三多晶硅膜，使得所述孔被所述第三多晶硅膜覆盖。

公开(公告)号：US20070285410A1

公开(公告)日：2007-12-13

申请号：US11808077

申请日：2007-06-06

申请人： Toshinari Shibasaki ,  Hideo Homma ,  Katsusuke Shimazaki ,  Masaya Adachi ,  Sukekazu Aratani

发明人： Toshinari Shibasaki ,  Hideo Homma ,  Katsusuke Shimazaki ,  Masaya Adachi ,  Sukekazu Aratani

IPC分类号： G09G5/00

CPC分类号： G09G3/20 ,  G02B3/005 ,  G02B26/08 ,  G09G2300/0439 ,  G09G2320/028

摘要： An illuminating device includes a light-condensing sheet, a light-emitting portion, and a control unit. The light-condensing sheet includes a plurality of lenses each with a light-condensing function ranged on a light transmittance substrate. The light-emitting portion is opposed to the light-condensing sheet and includes light-emitting areas with respective dimensions. The control unit switches a luminous state of the light-emitting area to a non-luminous state or vice versa. A display device is provided with the illuminating device described above.

摘要翻译： 照明装置包括聚光片，发光部和控制单元。 聚光片包括在透光性基板上具有聚光功能的多个透镜。 发光部分与聚光片相对，并且包括各自尺寸的发光区域。 控制单元将发光区域的发光状态切换到非发光状态，反之亦然。 具有上述照明装置的显示装置。

公开(公告)号：US06917054B2

公开(公告)日：2005-07-12

申请号：US10681126

申请日：2003-10-09

申请人： Hidekatsu Onose ,  Hideo Homma ,  Atsuo Watanabe

发明人： Hidekatsu Onose ,  Hideo Homma ,  Atsuo Watanabe

IPC分类号： H01L29/80 ,  H01L21/337 ,  H01L29/10 ,  H01L29/772 ,  H01L29/808 ,  H01L31/0312 ,  H01L29/72

CPC分类号： H01L29/1066 ,  H01L29/1608 ,  H01L29/7722

摘要： A semiconductor device includes a trench formed on a source side of a drift region, a p-type gate region and a gate formed at the bottom of the trench, and the source formed over the entire surface of the unit device through an insulating film. The narrowest portion of a channel of the device is deeper than one-half the junction depth of the p-type gate region. This allows the width of the channel on the drain side to be reduced even when a lower energy ion implantation manufacturing process is used.

摘要翻译： 半导体器件包括形成在漂移区的源极侧的沟槽，形成在沟槽底部的p型栅极区域和栅极，并且源极通过绝缘膜形成在单元器件的整个表面上。 器件通道的最窄部分比p型栅极区域的结深的一半深。 这允许即使在使用较低能量的离子注入制造工艺时，漏极侧的沟道的宽度也被减小。