公开(公告)号：US09153306B2

公开(公告)日：2015-10-06

申请号：US14356739

申请日：2011-11-08

申请人： Hideo Ohno ,  Shoji Ikeda ,  Hiroyuki Yamamoto ,  Yosuke Kurosaki ,  Katsuya Miura

发明人： Hideo Ohno ,  Shoji Ikeda ,  Hiroyuki Yamamoto ,  Yosuke Kurosaki ,  Katsuya Miura

IPC分类号： G11C11/16 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22

CPC分类号： G11C11/161 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： Provided is a tunnel magnetoresistive effect element such that a high TMR ratio and a low write current can be realized, and the thermal stability factor (E/kBT) of a recording layer and a pinned layer is increased while an increase in resistance of the element as a whole is suppressed, thus enabling a stable operation. On at least one of a recording layer 21 and a pinned layer 22 each comprising CoFeB, electrically conductive oxide layers 31 and 32 are disposed on a side opposite to a tunnel barrier layer 10.

摘要翻译： 提供了可以实现高TMR比和低写入电流的隧道磁阻效应元件，并且记录层和钉扎层的热稳定性因子（E / kBT）增加，同时元件的电阻增加 整体上被抑制，能够进行稳定的动作。 在每个包含CoFeB的记录层21和被钉扎层22中的至少一个上，导电氧化物层31和32设置在与隧道势垒层10相对的一侧。

公开(公告)号：US20140340961A1

公开(公告)日：2014-11-20

申请号：US14356739

申请日：2011-11-08

申请人： Hideo Ohno ,  Shoji Ikeda ,  Hiroyuki Yamamoto ,  Yosuke Kurosaki ,  Katsuya Miura

发明人： Hideo Ohno ,  Shoji Ikeda ,  Hiroyuki Yamamoto ,  Yosuke Kurosaki ,  Katsuya Miura

IPC分类号： G11C11/16 ,  H01L43/10 ,  H01L27/22

CPC分类号： G11C11/161 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： Provided is a tunnel magnetoresistive effect element such that a high TMR ratio and a low write current can be realized, and the thermal stability factor (E/kBT) of a recording layer and a pinned layer is increased while an increase in resistance of the element as a whole is suppressed, thus enabling a stable operation. On at least one of a recording layer 21 and a pinned layer 22 each comprising CoFeB, electrically conductive oxide layers 31 and 32 are disposed on a side opposite to a tunnel barrier layer 10.

摘要翻译： 提供了可以实现高TMR比和低写入电流的隧道磁阻效应元件，并且记录层和钉扎层的热稳定性因子（E / kBT）增加，同时元件的电阻增加 整体上被抑制，能够进行稳定的动作。 在每个包含CoFeB的记录层21和被钉扎层22中的至少一个上，导电氧化物层31和32设置在与隧道势垒层10相对的一侧。

公开(公告)号：US20130141966A1

公开(公告)日：2013-06-06

申请号：US13701257

申请日：2011-05-26

申请人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

发明人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

IPC分类号： G11C11/16 ,  H01L43/02

CPC分类号： G11C11/16 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

摘要： Provided are a magnetoresistance effect element with a stable magnetization direction perpendicular to film plane and a controlled magnetoresistance ratio, in which writing can be performed by magnetic domain wall motion, and a magnetic memory including the magnetoresistance effect element. The magnetoresistance ratio is controlled by forming a ferromagnetic layer of the magnetoresistance effect element from a ferromagnetic material including at least one type of 3d transition metal or a Heusler alloy. The magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane by controlling the film thickness of the ferromagnetic layer on an atomic layer level.

摘要翻译： 提供了具有与膜平面垂直的稳定磁化方向的磁阻效应元件和可以通过磁畴壁运动进行写入的受控磁阻比，以及包括磁阻效应元件的磁存储器。 通过从包括至少一种类型的3d过渡金属或Heusler合金的铁磁材料形成磁阻效应元件的铁磁层来控制磁阻比。 通过在原子层上控制铁磁层的膜厚度，将磁化方向从膜平面的方向转变为垂直于膜平面的方向。

公开(公告)号：US20130094284A1

公开(公告)日：2013-04-18

申请号：US13701846

申请日：2011-05-31

申请人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Hiroyuki Yamamoto ,  Katsuya Miura

发明人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Hiroyuki Yamamoto ,  Katsuya Miura

IPC分类号： G11C11/16 ,  H01L43/02

CPC分类号： H01L43/08 ,  G01R33/098 ,  G11B5/31 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114

摘要： Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers 106 and 107 of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.

摘要翻译： 提供了具有垂直于膜平面和受控磁阻比的稳定磁化方向的磁阻效应元件，以及使用该磁阻效应元件的磁存储器。 磁阻效应元件的铁磁层106和107由含有至少一种类型的3d过渡金属的铁磁材料形成，使得磁阻比被控制，并且铁磁层的膜厚被控制在诸如 磁化方向从薄膜平面的方向向垂直于薄膜平面的方向变化。

公开(公告)号：US09135973B2

公开(公告)日：2015-09-15

申请号：US13701257

申请日：2011-05-26

申请人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

发明人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/02 ,  G11C11/14 ,  H01L27/22

CPC分类号： G11C11/16 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

摘要： Provided are a magnetoresistance effect element with a stable magnetization direction perpendicular to film plane and a controlled magnetoresistance ratio, in which writing can be performed by magnetic domain wall motion, and a magnetic memory including the magnetoresistance effect element. The magnetoresistance ratio is controlled by forming a ferromagnetic layer of the magnetoresistance effect element from a ferromagnetic material including at least one type of 3d transition metal or a Heusler alloy. The magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane by controlling the film thickness of the ferromagnetic layer on an atomic layer level.

摘要翻译： 提供了具有与膜平面垂直的稳定磁化方向的磁阻效应元件和可以通过磁畴壁运动进行写入的受控磁阻比，以及包括磁阻效应元件的磁存储器。 通过从包括至少一种类型的3d过渡金属或Heusler合金的铁磁材料形成磁阻效应元件的铁磁层来控制磁阻比。 通过在原子层上控制铁磁层的膜厚度，将磁化方向从膜平面的方向转变为垂直于膜平面的方向。

公开(公告)号：US09450177B2

公开(公告)日：2016-09-20

申请号：US13578866

申请日：2011-02-14

申请人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

发明人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L27/22

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

摘要： There is provided a magnetoresistive element whose magnetization direction is stable in a direction perpendicular to the film surface and whose magnetoresistance ratio is controlled, as well as magnetic memory using such a magnetoresistive element. By having the material of a ferromagnetic layer forming the magnetoresistive element comprise a ferromagnetic material containing at least one type of 3d transition metal, or a Heusler alloy, to control the magnetoresistance ratio, and by controlling the thickness of the ferromagnetic layer on an atomic layer level, the magnetization direction is changed from being in-plane with the film surface to being perpendicular to the film surface.

摘要翻译： 提供了一种磁阻元件，其磁化方向在垂直于膜表面的方向上是稳定的并且其磁阻比被控制，以及使用这种磁阻元件的磁存储器。 通过使形成磁阻元件的铁磁层的材料包含含有至少一种类型的3d过渡金属或Heusler合金的铁磁材料，以控制磁阻比，并且通过控制原子层上的铁磁层的厚度 磁化方向从膜表面垂直于膜表面进行平面切换。

公开(公告)号：US08917541B2

公开(公告)日：2014-12-23

申请号：US13701846

申请日：2011-05-31

申请人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Hiroyuki Yamamoto ,  Katsuya Miura

发明人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Hiroyuki Yamamoto ,  Katsuya Miura

IPC分类号： G11C11/00 ,  G11C11/16 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  G11B5/31 ,  H01L27/22

CPC分类号： H01L43/08 ,  G01R33/098 ,  G11B5/31 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114

摘要： Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers 106 and 107 of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.

摘要翻译： 提供了具有垂直于膜平面和受控磁阻比的稳定磁化方向的磁阻效应元件，以及使用该磁阻效应元件的磁存储器。 磁阻效应元件的铁磁层106和107由含有至少一种类型的3d过渡金属的铁磁材料形成，使得磁阻比被控制，并且铁磁层的膜厚被控制在诸如 磁化方向从薄膜平面的方向向垂直于薄膜平面的方向变化。

公开(公告)号：US20120320666A1

公开(公告)日：2012-12-20

申请号：US13578866

申请日：2011-02-14

申请人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

发明人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

IPC分类号： G11C11/15 ,  G11B5/673

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

摘要： There is provided a magnetoresistive element whose magnetization direction is stable in a direction perpendicular to the film surface and whose magnetoresistance ratio is controlled, as well as magnetic memory using such a magnetoresistive element. By having the material of a ferromagnetic layer forming the magnetoresistive element comprise a ferromagnetic material containing at least one type of 3d transition metal, or a Heusler alloy, to control the magnetoresistance ratio, and by controlling the thickness of the ferromagnetic layer on an atomic layer level, the magnetization direction is changed from being in-plane with the film surface to being perpendicular to the film surface.

摘要翻译： 提供了一种磁阻元件，其磁化方向在垂直于膜表面的方向上是稳定的并且其磁阻比被控制，以及使用这种磁阻元件的磁存储器。 通过使形成磁阻元件的铁磁层的材料包含含有至少一种类型的3d过渡金属或Heusler合金的铁磁材料，以控制磁阻比，并且通过控制原子层上的铁磁层的厚度 磁化方向从膜表面垂直于膜表面进行平面切换。

公开(公告)号：US08837209B2

公开(公告)日：2014-09-16

申请号：US13582955

申请日：2011-02-17

申请人： Hideo Ohno ,  Shoji Ikeda ,  Katsuya Miura ,  Kazuo Ono ,  Riichiro Takemura ,  Hiromasa Takahashi

发明人： Hideo Ohno ,  Shoji Ikeda ,  Katsuya Miura ,  Kazuo Ono ,  Riichiro Takemura ,  Hiromasa Takahashi

IPC分类号： G11C11/00 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16

CPC分类号： H01L43/08 ,  G11C11/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228 ,  Y10S977/935

摘要： A relation between a drive current of a selection transistor of a magnetic memory and a threshold magnetization switching current of the magnetoresistance effect element is optimized. In order to optimize the relation between the drive current of the selection transistor and the threshold magnetization switching current of the magnetoresistance effect element 101 of the magnetic memory cell, a mechanism 601-604 for dropping the threshold magnetization switching current on “1” writing is provided that applies a magnetic field that is in the inverse direction of the pinned layer to the recording layer of the magnetoresistance effect element.

摘要翻译： 优选磁存储器的选择晶体管的驱动电流与磁阻效应元件的阈值磁化开关电流之间的关系。 为了优化选择晶体管的驱动电流与磁存储单元的磁阻效应元件101的阈值磁化开关电流之间的关系，用于将阈值磁化开关电流降低到“1”写入的机构601-604是 只要将与钉扎层反方向的磁场施加到磁阻效应元件的记录层即可。

公开(公告)号：US20130058156A1

公开(公告)日：2013-03-07

申请号：US13582955

申请日：2011-02-17

申请人： Hideo Ohno ,  Shoji Ikeda ,  Katsuya Miura ,  Kazuo Ono

发明人： Hideo Ohno ,  Shoji Ikeda ,  Katsuya Miura ,  Kazuo Ono

IPC分类号： G11C11/16

CPC分类号： H01L43/08 ,  G11C11/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228 ,  Y10S977/935

摘要： A relation between a drive current of a selection transistor of a magnetic memory and a threshold magnetization switching current of the magnetoresistance effect element is optimized. In order to optimize the relation between the drive current of the selection transistor and the threshold magnetization switching current of the magnetoresistance effect element 101 of the magnetic memory cell, a mechanism 601-604 for dropping the threshold magnetization switching current on “1” writing is provided that applies a magnetic field that is in the inverse direction of the pinned layer to the recording layer of the magnetoresistance effect element.

摘要翻译： 优选磁存储器的选择晶体管的驱动电流与磁阻效应元件的阈值磁化开关电流之间的关系。 为了优化选择晶体管的驱动电流与磁存储单元的磁阻效应元件101的阈值磁化开关电流之间的关系，提供了用于在1次写入时降低阈值磁化开关电流的机构601-604，其中， 将与钉扎层反方向的磁场施加到磁阻效应元件的记录层。