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公开(公告)号：US08837209B2
公开(公告)日：2014-09-16
申请号：US13582955
申请日：2011-02-17
申请人： Hideo Ohno , Shoji Ikeda , Katsuya Miura , Kazuo Ono , Riichiro Takemura , Hiromasa Takahashi
发明人： Hideo Ohno , Shoji Ikeda , Katsuya Miura , Kazuo Ono , Riichiro Takemura , Hiromasa Takahashi
CPC分类号： H01L43/08 , G11C11/00 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： A relation between a drive current of a selection transistor of a magnetic memory and a threshold magnetization switching current of the magnetoresistance effect element is optimized. In order to optimize the relation between the drive current of the selection transistor and the threshold magnetization switching current of the magnetoresistance effect element 101 of the magnetic memory cell, a mechanism 601-604 for dropping the threshold magnetization switching current on “1” writing is provided that applies a magnetic field that is in the inverse direction of the pinned layer to the recording layer of the magnetoresistance effect element.
摘要翻译： 优选磁存储器的选择晶体管的驱动电流与磁阻效应元件的阈值磁化开关电流之间的关系。 为了优化选择晶体管的驱动电流与磁存储单元的磁阻效应元件101的阈值磁化开关电流之间的关系，用于将阈值磁化开关电流降低到“1”写入的机构601-604是 只要将与钉扎层反方向的磁场施加到磁阻效应元件的记录层即可。
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2.发明申请MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY CELL USING SAME, AND RANDOM ACCESS MEMORY 有权磁阻效应元件，使用相同的磁记忆单元和随机存取存储器公开(公告)号：US20130028013A1
公开(公告)日：2013-01-31
申请号：US13575387
申请日：2011-01-25
申请人： Shoji Ikeda , Hideo Ohno , Hiroyuki Yamamoto , Kenchi Ito , Hiromasa Takahashi
发明人： Shoji Ikeda , Hideo Ohno , Hiroyuki Yamamoto , Kenchi Ito , Hiromasa Takahashi
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/16 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： Provided is a magnetoresistive effect element which uses a perpendicularly magnetized material and has a high TMR ratio. Intermediate layers 31, 32 composed of an element metal having a melting point of 1600° C. or an alloy containing the metal on an outside of a structure consisting of a CoFeB layer 41, an MgO barrier layer 10, and a CoFeB layer 42. By inserting the intermediate layers 31, 32, crystallization of the CoFeB layer during annealing is advanced from an MgO (001) crystal side, so that the CoFeB layer has a crystalline orientation in bcc (001).
摘要翻译： 提供了使用垂直磁化材料并具有高TMR比的磁阻效应元件。 由熔点为1600℃的元素金属组成的中间层31,32，或由CoFeB层41，MgO阻挡层10和CoFeB层42构成的结构的外部含有金属的合金。 通过插入中间层31,32，退火期间的CoFeB层的结晶从MgO（001）晶体侧前进，使得CoFeB层具有bcc（001）的结晶取向。
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3.发明申请公开(公告)号：US20130107616A1
公开(公告)日：2013-05-02
申请号：US13808967
申请日：2010-07-09
申请人： Hideo Ohno , Shoji Ikeda , Hiroyuki Yamamoto , Kenchi Ito , Hiromasa Takahashi
发明人： Hideo Ohno , Shoji Ikeda , Hiroyuki Yamamoto , Kenchi Ito , Hiromasa Takahashi
IPC分类号： H01L29/82
CPC分类号： H01L29/82 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： A magnetoresistive effect element is provided that exhibits a low writing current density while maintaining a high TMR ratio. A laminated structure of a second ferromagnetic layer/a non-magnetic layer/a first ferromagnetic layer is employed as a recording layer. A material of bcc crystalline structure, such as CoFeB, is employed as a second ferromagnetic layer being in contact with MgO barrier layer. A material whose anisotropy field Hk⊥ in the perpendicular direction is large and that satisfies the relationship of 2πrMs
摘要翻译： 提供了具有低写入电流密度同时保持高TMR比的磁阻效应元件。 采用第二铁磁层/非磁性层/第一铁磁层的叠层结构作为记录层。 使用诸如CoFeB的bcc晶体结构的材料作为与MgO阻挡层接触的第二铁磁层。 垂直方向的各向异性场Hk⊥大且满足2pirMs
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4.发明授权Magnetoresistive effect element, magnetic memory cell using same, and random access memory 有权磁阻效应元件，使用其的磁存储单元和随机存取存储器公开(公告)号：US09042165B2
公开(公告)日：2015-05-26
申请号：US13575387
申请日：2011-01-25
申请人： Shoji Ikeda , Hideo Ohno , Hiroyuki Yamamoto , Kenchi Ito , Hiromasa Takahashi
发明人： Shoji Ikeda , Hideo Ohno , Hiroyuki Yamamoto , Kenchi Ito , Hiromasa Takahashi
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/16 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： A magnetoresistive effect element uses a perpendicularly magnetized material and has a high TMR ratio. Intermediate layers composed of an element metal having a melting point of 1600° C. or an alloy containing the metal on an outside of a structure consisting of a CoFeB layer, an MgO barrier layer, and a CoFeB layer. By inserting the intermediate layers, crystallization of the CoFeB layer during annealing is advanced from an MgO (001) crystal side, so that the CoFeB layer has a crystalline orientation in bcc (001).
摘要翻译： 磁阻效应元件使用垂直磁化材料并具有高TMR比。 由熔点为1600℃的元素金属构成的中间层或由CoFeB层，MgO阻挡层和CoFeB层构成的结构的外部含有金属的合金。 通过插入中间层，退火过程中CoFeB层的结晶从MgO（001）晶体侧前进，使得CoFeB层具有bcc（001）中的结晶取向。
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公开(公告)号：US07778068B2
公开(公告)日：2010-08-17
申请号：US12545363
申请日：2009-08-21
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/1653 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1693
摘要： In a memory using spin transfer torque, state of the spin is made unstable by applying a weak pulse before rewriting to reduce rewrite current. Reading of high-speed operation is performed with current in a regime where the current becomes non-linearly increases corresponding to the pulse width to suppress disturb. Further, fluctuation of respective memory cells is suppressed by a driving method setting the amount of spin constant by bit line charge to suppress read disturb.
摘要翻译： 在使用自旋传递转矩的存储器中，通过在重写之前施加弱脉冲来减小重写电流使自旋状态变得不稳定。 利用电流在电流变得非线性地增加而与脉冲宽度对应的状态下进行高速运行的读取，以抑制干扰。 此外，通过利用位线电荷设定自旋常数的驱动方法来抑制各个存储单元的波动，以抑制读取干扰。
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公开(公告)号：US20090310399A1
公开(公告)日：2009-12-17
申请号：US12545363
申请日：2009-08-21
CPC分类号： H01L27/228 , G11C11/1653 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1693
摘要： In a memory using spin transfer torque, state of the spin is made unstable by applying a weak pulse before rewriting to reduce rewrite current. Reading of high-speed operation is performed with current in a regime where the current becomes non-linearly increases corresponding to the pulse width to suppress disturb. Further, fluctuation of respective memory cells is suppressed by a driving method setting the amount of spin constant by bit line charge to suppress read disturb.
摘要翻译： 在使用自旋传递转矩的存储器中，通过在重写之前施加弱脉冲来减小重写电流使自旋状态变得不稳定。 利用电流在电流变得非线性地增加而与脉冲宽度对应的状态下进行高速运行的读取，以抑制干扰。 此外，通过利用位线电荷设定自旋常数的驱动方法来抑制各个存储单元的波动，以抑制读取干扰。
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公开(公告)号：US20070258281A1
公开(公告)日：2007-11-08
申请号：US11606187
申请日：2006-11-30
IPC分类号： G11C11/02
CPC分类号： G11C11/15
摘要： A magnetic memory device comprises a magnetic tunnel junction (MTJ) having a ferromagnetic free layer, and exhibits a first, relatively high resistance state, and a second, relatively low resistance state. To write to the magnetic memory device a current IMTJ is driven through the MTJ. For a first duration, the current is equal to a DC threshold current, being the DC current required to switch the multilayer structure between the first state and the second state. This induces a C-like domain structure in the free layer. For a second duration, the current IMTJ is larger than the DC threshold current. This causes the MTJ to switch states. The current requited to cause switching is less than that required using a uniform current pulse.
摘要翻译： 磁存储器件包括具有铁磁性自由层的磁性隧道结（MTJ），并且呈现出第一相对高电阻状态和第二较低电阻状态。 为了写入磁存储器件，通过MTJ驱动电流I MTJ 。 对于第一持续时间，电流等于DC阈值电流，即在第一状态和第二状态之间切换多层结构所需的DC电流。 这在自由层中引起C样结构域结构。 在第二持续时间内，当前的电流电流大于直流阈值电流。 这导致MTJ切换状态。 导致切换的电流小于使用均匀电流脉冲所需的电流。
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公开(公告)号：US20090310400A1
公开(公告)日：2009-12-17
申请号：US12545379
申请日：2009-08-21
IPC分类号： G11C11/02
CPC分类号： G11C11/16 , G11C8/08 , G11C11/1675 , H01L27/228
摘要： In MRAM using a spin-transfer torque switching, a sufficient writing operation with a small memory cell is realized, and a reading current is enlarged while a reading disturbance is suppressed. In the case where the free layer of the tunnel magneto-resistance element is located on the side of the bit line, using a PMOS transistor, and in the case where the fixed layer of the tunnel magneto-resistance element is located on the side of the bit line, using an NMOS transistor, an anti-parallel writing in a source grounding operation is performed. The reading and writing operation margin is improved by performing a reading operation in an anti-parallel writing direction.
摘要翻译： 在使用自旋转移转矩切换的MRAM中，实现了具有小存储单元的充分的写入操作，并且在读取干扰被抑制的同时增加读取电流。 在隧道磁阻元件的自由层位于位线一侧的情况下，使用PMOS晶体管，并且在隧道磁阻元件的固定层位于 使用NMOS晶体管的位线执行源极接地操作中的反并联写入。 通过执行反并行写入方向的读取操作来提高读取和写入操作余量。
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公开(公告)号：US07738286B2
公开(公告)日：2010-06-15
申请号：US11638379
申请日：2006-12-14
申请人： Kenchi Ito , Hiromasa Takahashi , Takayuki Kawahara , Riichiro Takemura , Thibault Devolder , Paul Crozat , Joo-von Kim , Claude Chappert
发明人： Kenchi Ito , Hiromasa Takahashi , Takayuki Kawahara , Riichiro Takemura , Thibault Devolder , Paul Crozat , Joo-von Kim , Claude Chappert
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , Y10S977/935
摘要： A magnetic memory device comprises a magnetic tunnel junction (MTJ) connecting to a bit line to a sense line through an isolation transistor. The MTJ includes a ferromagnetic layer having a magnetic hard axis. An assist current line overlies the bit line and is insulated from the bit line. The MTJ is switchable between a first, relatively high resistance state and a second, relatively low resistance state. The assist current line applies a magnetic field along the magnetic hard axis in the ferromagnetic layer, independently of current flow through the MTJ for assisting switching of the MTJ between the first and second states.
摘要翻译： 磁存储器件包括通过隔离晶体管连接到感测线的位线的磁性隧道结（MTJ）。 MTJ包括具有磁性硬轴的铁磁层。 辅助电流线覆盖位线并与位线绝缘。 MTJ可以在第一相对高电阻状态和第二相对低电阻状态之间切换。 辅助电流线沿铁磁层中的磁性硬轴施加磁场，独立于通过MTJ的电流流动来辅助MTJ在第一和第二状态之间切换。
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公开(公告)号：US07596014B2
公开(公告)日：2009-09-29
申请号：US11736252
申请日：2007-04-17
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/1653 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1693
摘要： In a memory using spin transfer torque, state of the spin is made unstable by applying a weak pulse before rewriting to reduce rewrite current. Reading of high-speed operation is performed with current in a regime where the current becomes non-linearly increases corresponding to the pulse width to suppress disturb. Further, fluctuation of respective memory cells is suppressed by a driving method setting the amount of spin constant by bit line charge to suppress read disturb.
摘要翻译： 在使用自旋传递转矩的存储器中，通过在重写之前施加弱脉冲来减小重写电流使自旋状态变得不稳定。 利用电流在电流变得非线性地增加而与脉冲宽度对应的状态下进行高速运行的读取，以抑制干扰。 此外，通过利用位线电荷设定自旋常数的驱动方法来抑制各个存储单元的波动，以抑制读取干扰。
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