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公开(公告)号：US06894428B2
公开(公告)日：2005-05-17
申请号：US10047420
申请日：2002-01-14
CPC分类号： H03H9/21
摘要： A vibrating piece in which a CI value ratio is maintained constant while minimizing the CI value of the fundamental wave so that variations of the CI values between the vibrating piece devices are reduced even if the base is made short, and the entire vibrating piece can be made smaller.
摘要翻译： 其中CI值比保持恒定，同时使基波的CI值最小化的振动片，使得即使基底短而振动片装置之间的CI值的变化也减小，并且整个振动片可以 做得更小。
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公开(公告)号：US06768247B2
公开(公告)日：2004-07-27
申请号：US10087664
申请日：2002-03-01
IPC分类号： H01L4108
摘要： A vibrating reed is provided which includes a base; and a vibration arm section formed so as to protrude from this base, a grooved portion is formed in one of the obverse surface and the rear surface of the vibration arm section, and a groove electrode portion and a side electrode portion is formed in the grooved portion and the side portion of the vibration arm section, respectively, wherein a short-circuit prevention section is formed between the groove electrode portion and the side electrode portion and thus vibration failure is made unlikely to occur while minimizing the CI value.
摘要翻译： 提供了一种包括底座的振动片; 以及形成为从该基部突出的振动臂部，在振动臂部的正面和后表面中的一个中形成有开槽部，并且在槽形状中形成有沟槽电极部和侧面电极部 部分和振动臂部分的侧部，其中在槽电极部分和侧电极部分之间形成防短路部分，因此在使CI值最小的同时不可能发生振动故障。
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公开(公告)号：US06927530B2
公开(公告)日：2005-08-09
申请号：US10771666
申请日：2004-02-04
IPC分类号： H02N2/08 , H03H9/21 , H01L41/053 , H01L41/047 , H03H9/17
CPC分类号： H03H9/21
摘要： A vibrating piece in which a CI values ratio is maintained constant while minimizing the CI value of the fundamental wave, variations of the CI values between the vibrating piece devices are reduced even if the base is made short, and the entire vibrating piece can be made smaller.
摘要翻译： 其中CI值比保持恒定同时最小化基波的CI值的振动片，即使基底短而使振动片装置之间的CI值的变化减小，并且可以制成整个振动片 较小。
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公开(公告)号：US06587009B2
公开(公告)日：2003-07-01
申请号：US10035094
申请日：2001-12-21
IPC分类号： H03B532
CPC分类号： H03H9/21 , H03H2003/0492
摘要： A vibrating piece comprises a base and vibrating arms formed protruding from the base, wherein a groove is formed on at least one of the front side and rear side of the vibrating arms, and wherein notches are formed in the base.
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公开(公告)号：US06897737B2
公开(公告)日：2005-05-24
申请号：US10672597
申请日：2003-09-26
摘要： A vibrating reed which includes a base; and a vibration arm section formed so as to protrude from this base wherein a through groove is formed in the vibration arm section, and a rigidity reinforcing section is provided in the through groove, and thus the frequency is not decreased and the CI value is not increased.
摘要翻译： 包括基座的振动筘; 以及形成为从该基部突出的振动臂部，其中在振动臂部中形成有通孔，并且在贯通槽中设置有刚性加强部，因此频率不降低，并且CI值不 增加。
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公开(公告)号：US06724271B2
公开(公告)日：2004-04-20
申请号：US10087606
申请日：2002-03-01
IPC分类号： H03B530
摘要： A vibrating reed includes a base; and a vibration arm section formed so as to protrude from this base wherein a through groove is formed in the vibration arm section, and a rigidity reinforcing section is provided in the through groove, and thus the frequency is not decreased and the CI value is not increased.
摘要翻译： 振动片包括底座; 以及形成为从该基部突出的振动臂部，其中在振动臂部中形成有通孔，并且在贯通槽中设置有刚性加强部，因此频率不降低，并且CI值不 增加。
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公开(公告)号：US09224968B2
公开(公告)日：2015-12-29
申请号：US13552899
申请日：2012-07-19
申请人： Yuji Iwaki , Junichiro Sakata , Hisao Ikeda , Tomoya Aoyama , Takaaki Nagata , Takahiro Kawakami , Satoshi Seo , Ryoji Nomura
发明人： Yuji Iwaki , Junichiro Sakata , Hisao Ikeda , Tomoya Aoyama , Takaaki Nagata , Takahiro Kawakami , Satoshi Seo , Ryoji Nomura
CPC分类号： H01L51/5048 , H01L51/0059 , H01L51/0062 , H01L51/0072 , H01L51/0081
摘要： An object of the present invention is to provide a light-emitting element with high luminous efficiency, and a light-emitting element of low-voltage driving. Another object is to provide a light-emitting device with low power consumption by using the light-emitting element. Another object is to provide an electronic appliance with low power consumption by using the light-emitting device in a display portion. A light-emitting element includes, between a pair of electrodes, a layer containing a composite material of a first organic compound and an inorganic compound and a layer containing a second organic compound being in contact with the layer containing the composite material, wherein the second organic compound does not have a peak of an absorption spectrum in a wavelength region of 450 to 800 nm if the second organic compound is compounded with the inorganic compound.
摘要翻译： 本发明的目的是提供一种发光效率高的发光元件和低电压驱动用发光元件。 另一个目的是通过使用发光元件来提供具有低功耗的发光装置。 另一个目的是通过在显示部分中使用发光装置来提供具有低功耗的电子设备。 发光元件在一对电极之间包括含有第一有机化合物和无机化合物的复合材料的层和包含与含有复合材料的层接触的第二有机化合物的层，其中第二 如果第二有机化合物与无机化合物混合，有机化合物在450-800nm的波长区域中不具有吸收光谱的峰值。
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公开(公告)号：US09202827B2
公开(公告)日：2015-12-01
申请号：US12641446
申请日：2009-12-18
申请人： Jun Koyama , Junichiro Sakata , Tetsunori Maruyama , Yuki Imoto , Yuji Asano , Junichi Koezuka
发明人： Jun Koyama , Junichiro Sakata , Tetsunori Maruyama , Yuki Imoto , Yuji Asano , Junichi Koezuka
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/1255 , H01L27/12 , H01L27/1225 , H01L27/127 , H01L28/20 , H01L29/24 , H01L29/78606 , H01L29/7869
摘要： The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.
摘要翻译： 通过使用含有氢化合物如硅烷（SiH 4）和氨（NH 3）的气体的等离子体CVD形成的氮化硅层910设置在与用于电阻器354的氧化物半导体层905上并直接接触，并且氮化硅 在用于薄膜晶体管355的氧化物半导体层906上设置层910，氧化硅层909用作阻挡层。 因此，与氧化物半导体层906相比，在氧化物半导体层905中引入更高浓度的氢。结果，使用于电阻器354的氧化物半导体层905的电阻比氧化物半导体层的电阻低 906用于薄膜晶体管355。
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公开(公告)号：US09196858B2
公开(公告)日：2015-11-24
申请号：US13620903
申请日：2012-09-15
申请人： Junichiro Sakata
发明人： Junichiro Sakata
IPC分类号： H01L21/443 , H01L51/50 , H01L51/56
CPC分类号： H01L51/5088 , H01L51/5092 , H01L51/56
摘要： An object of the present invention to improve reliability of a light emitting device having a mixed layer including an organic compound and metal oxide without reducing productivity. The above object is solved in such a way that after forming the mixed layer including the organic compound and metal oxide, the mixed layer is exposed to a nitrogen gas atmosphere without being exposed to a gas atmosphere including oxygen, and then a stacked film is formed over the mixed layer without exposing the mixed layer to a gas atmosphere including oxygen.
摘要翻译： 本发明的目的是提高具有包含有机化合物和金属氧化物的混合层的发光装置的可靠性，而不降低生产率。 上述目的被解决为在形成包含有机化合物和金属氧化物的混合层之后，将混合层暴露于氮气气氛中而不暴露于包括氧的气体气氛，然后形成层叠膜 在混合层之上，而不将混合层暴露于包括氧的气体气氛中。
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公开(公告)号：US09136389B2
公开(公告)日：2015-09-15
申请号：US12581200
申请日：2009-10-19
IPC分类号： H01L29/10 , H01L29/12 , H01L29/786 , H01L29/45 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/45 , H01L29/78618
摘要： An object is to control composition and a defect of an oxide semiconductor. Another object is to increase field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with off current suppressed. The oxide semiconductor is represented by InMO3(ZnO)n (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and n is a non-integer number of greater than or equal to 1 and less than 50) and further contains hydrogen. In this case, the concentration of Zn is made to be lower than the concentrations of In and M (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al). In addition, the oxide semiconductor has an amorphous structure. Here, n is preferably a non-integer number of greater than or equal to 50, more preferably less than 10.
摘要翻译： 目的是控制氧化物半导体的组成和缺陷。 另一个目的是增加薄膜晶体管的场效应迁移率，并获得足够的开关比，同时抑制截止电流。 氧化物半导体由InMO 3（ZnO）n（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素表示，n是大于或等于1的非整数） 小于50），还含有氢。 在这种情况下，使Zn的浓度低于In和M的浓度（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素）。 此外，氧化物半导体具有非晶结构。 这里，n优选为大于或等于50，更优选小于10的非整数。
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