公开(公告)号：US07273647B2

公开(公告)日：2007-09-25

申请号：US10809712

申请日：2004-03-26

申请人： Hideshi Nishikawa ,  Nobumitsu Takase ,  Kazuyuki Egashira ,  Hiroshi Hayakawa

发明人： Hideshi Nishikawa ,  Nobumitsu Takase ,  Kazuyuki Egashira ,  Hiroshi Hayakawa

IPC分类号： B32B9/04

CPC分类号： C30B33/00 ,  C30B29/06 ,  H01L21/3225 ,  Y10T428/21

摘要： A silicon annealed wafer having a sufficient thick layer free from COP defects on the surface, and a sufficient uniform BMD density in the inside can be produced by annealing either a base material wafer having nitrogen at a concentration of less than 1×1014 atoms/cm3, COP defects having a size of 0.1 μm or less in the highest frequency of occurrence and no COP defects having a size of 0.2 μm or more, oxygen precipitates at a density of 1×104 counts/cm2 or more, and BMDs (oxygen precipitates), where the ratio of the maximum to the minimum of the BMD density in the radial direction of the wafer is 3 or less, or a base material wafer grown at specific average temperature gradients within specific temperature ranges and specific cooling times for a single crystal at a nitrogen concentration of less than 1×1014 atoms/cm3, employing the Czochralski method. Moreover, a silicon epitaxial wafer having very small defects and a uniform BMD distribution in the inside can be formed by growing an epitaxial layer on the surface of either the first type base material wafer or the second type base material wafer. Both the silicon annealed wafer and the silicon epitaxial wafer greatly reduce the rate of producing defective devices, thereby enabling the device productivity to be enhanced.

摘要翻译： 具有在表面上没有COP缺陷的足够厚的厚层的硅退火晶片，并且可以通过退火具有小于1×10 14的浓度的氮的基材晶片来制造内部的足够均匀的BMD密度， / SUP>原子/ cm 3，出现发生频率的大小为0.1μm以下的COP缺陷，没有大小为0.2μm以上的COP缺陷，氧浓度为 1×10 4个/ cm 2以上的BMD（氧沉淀物），其中晶片的径向BMD密度的最大值与最小值之比 在特定温度范围内以特定平均温度梯度生长的基材晶片和氮浓度小于1×10 14原子/ cm 2的单晶的比冷却时间为3以下， 3，采用Czochralski法。 此外，可以通过在第一类型基材晶片或第二类型基材晶片的表面上生长外延层来形成具有非常小缺陷和均匀的BMD分布的硅外延晶片。 硅退火晶片和硅外延晶片都大大降低了制造缺陷器件的速率，从而能够提高器件的生产率。

公开(公告)号：US06458204B1

公开(公告)日：2002-10-01

申请号：US09717135

申请日：2000-11-22

申请人： Masahiko Okui ,  Hiroki Murakami ,  Kazuyuki Egashira ,  Makoto Ito ,  Hiroshi Hayakawa ,  Kelly Garret ,  Yoshinori Shirakawa

发明人： Masahiko Okui ,  Hiroki Murakami ,  Kazuyuki Egashira ,  Makoto Ito ,  Hiroshi Hayakawa ,  Kelly Garret ,  Yoshinori Shirakawa

IPC分类号： C30B1520

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/305

摘要： A method of producing high-quality and large-diameter single crystals by the Czochralski method is disclosed which can provide wafers with a minimized number of such grown-in defects as dislocation clusters and laser scattering tomography defects. Specifically, it is a method of producing silicon single crystals which comprises carrying out the crystal pulling while maintaining the solid-melt interface during pulling in the shape of an upward convex with the central portion of the interface being higher by at least 5 mm than the peripheral region thereof and while applying a magnetic field, and optionally in addition to the above, while maintaining the temperature gradient in the direction of axis of pulling in the peripheral region at a level lower than that in the central portion in the range of from the melting point to 1,200° C. In this case, it is desirable that the portion of the single crystal surface lying at least 50 mm above the melt surface be shielded from direct radiant heat from the heater and/or crucible wall, that a horizontal magnetic field of 0.08 to 0.3 T be applied in parallel with the melt surface or a cusped magnetic field showing an intensity of 0.02 to 0.07 T at a crucible wall site on the melt surface be applied and that the crucible be rotated at a speed of not more than 5 min−1 and the single crystal at a speed of not less than 13 min−1.

摘要翻译： 公开了通过Czochralski方法生产高质量和大直径单晶的方法，其可以为晶片提供最少数量的诸如位错簇和激光散射层析成像缺陷的这种生长缺陷。 具体地说，它是一种生产硅单晶的方法，其中包括在拉伸成呈向上凸起的形状的同时保持固溶体界面的同时进行晶体拉伸，其中界面的中心部分高​​于 并且在施加磁场的同时，并且可选地除了上述之外，同时保持在周边区域中的拉动轴线方向上的温度梯度比在中心部分的温度梯度低 熔点为1200℃。在这种情况下，希望在熔体表面上方至少50毫米的单晶表面的部分被屏蔽不受来自加热器和/或坩埚壁的直接辐射热，即水平磁 在熔融表面上的坩埚壁部位处，与熔体表面平行施加0.08〜0.3T的场，或者表示强度为0.02〜0.07T的尖细磁场b 并且坩埚以不超过5分钟-1的速度旋转，并且单晶以不小于13分钟-1的速度旋转。

公开(公告)号：US20100018454A1

公开(公告)日：2010-01-28

申请号：US12458410

申请日：2009-07-10

申请人： Ken Hamada ,  Hiroaki Taguchi ,  Kazuyuki Egashira

发明人： Ken Hamada ,  Hiroaki Taguchi ,  Kazuyuki Egashira

IPC分类号： C30B15/14

CPC分类号： C30B15/14 ,  C30B15/20 ,  C30B15/203 ,  C30B29/06 ,  C30B35/00

摘要： After melting raw materials, a distance between a raw material melt surface and a heat-shielding member disposed so as to face to the melt surface is adjusted based on temporal changes in chamber inside conditions, such as the heater temperature at the time of completion of the seed crystal equilibration operation carried out after completion of the raw material melting procedure and/or lag time required for completion of the seed crystal equilibration operation following completion of the raw material melting procedure. As a result, single crystals can be produced efficiently and in high yield, and further, by controlling the crystal interior temperature gradient by modifying the distance between the melt surface and the heat-shielding member, it becomes possible to control the ratio V/G (V:pulling speed, G:crystal interior temperature gradient) to thereby produce single crystals free of crystal defects such as COPs and/or dislocation clusters.

摘要翻译： 在原料熔化之后，基于室内条件的时间变化（例如，完成时的加热器温度）来调节原料熔体表面和设置成面对熔体表面的隔热部件之间的距离 在完成原料熔化步骤后完成原料熔化步骤和/或完成晶种平衡操作所需的滞后时间之后进行晶种平衡操作。 结果，可以有效且高产率地制造单晶，另外，通过改变熔融面和隔热构件之间的距离来控制晶体内部温度梯度，可以控制比率V / G （V：拉伸速度，G：晶体内部温度梯度），从而产生没有诸如COP和/或位错簇的晶体缺陷的单晶。

公开(公告)号：US07780783B2

公开(公告)日：2010-08-24

申请号：US11907046

申请日：2007-10-09

申请人： Norihito Fukatsu ,  Kazuyuki Egashira ,  Senrin Fu

发明人： Norihito Fukatsu ,  Kazuyuki Egashira ,  Senrin Fu

IPC分类号： C30B15/00 ,  C30B21/06

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/305 ,  Y10S117/917

摘要： The invention provides an apparatus for producing a single crystal, and a method for producing a silicon single crystal using the same. An apparatus for producing a single crystal includes a heating device which heats polycrystalline silicon raw material held in a crucible to form silicon melt, and a pulling up device which grows a silicon single crystal while pulling it up from the silicon melt accompanied with rotation. By providing the apparatus with a magnetic field generation unit which applies to the silicon melt a cusp magnetic field a shape of neutral plane of which is symmetric around the rotation axis of the silicon single crystal and is curved in the upward direction, various conditions for producing a silicon single crystal having a defect free region is relaxed, and a silicon single crystal having a defect free region is produced at high efficiency.

摘要翻译： 本发明提供一种用于制造单晶的装置，以及使用该单晶的硅单晶的制造方法。 单晶体的制造装置包括加热保持在坩埚中的多晶硅原料以形成硅熔体的加热装置，以及伴随旋转从硅熔体中拉出硅单晶的提拉装置。 通过向该装置提供磁场产生单元，该磁场产生单元向硅熔体施加尖角磁场，其中性平面的形状围绕单晶的旋转轴对称并且在向上方向上弯曲，生成的各种条件 具有无缺陷区域的硅单晶被松弛，并且以高效率产生具有无缺陷区域的硅单晶。

公开(公告)号：US07300518B2

公开(公告)日：2007-11-27

申请号：US11131333

申请日：2005-05-18

申请人： Norihito Fukatsu ,  Kazuyuki Egashira ,  Senrin Fu

发明人： Norihito Fukatsu ,  Kazuyuki Egashira ,  Senrin Fu

IPC分类号： C30B15/20 ,  C30B35/00

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/305 ,  Y10S117/917

摘要： The invention provides an apparatus for producing a single crystal, and a method for producing a silicon single crystal using the same. An apparatus for producing a single crystal includes a heating device which heats polycrystalline silicon raw material held in a crucible to form silicon melt, and a pulling up device which grows a silicon single crystal while pulling it up from the silicon melt accompanied with rotation. By providing the apparatus with a magnetic field generation unit which applies to the silicon melt a cusp magnetic field a shape of neutral plane of which is symmetric around the rotation axis of the silicon single crystal and is curved in the upward direction, various conditions for producing a silicon single crystal having a defect free region is relaxed, and a silicon single crystal having a defect free region is produced at high efficiency.

摘要翻译： 本发明提供一种用于制造单晶的装置，以及使用该单晶的硅单晶的制造方法。 单晶体的制造装置包括加热保持在坩埚中的多晶硅原料以形成硅熔体的加热装置，以及伴随旋转从硅熔体中拉出硅单晶的提拉装置。 通过向该装置提供磁场产生单元，该磁场产生单元向硅熔体施加尖角磁场，其中性平面的形状围绕单晶的旋转轴对称并且在向上方向上弯曲，生成的各种条件 具有无缺陷区域的硅单晶被松弛，并且以高效率产生具有无缺陷区域的硅单晶。

公开(公告)号：US06514335B1

公开(公告)日：2003-02-04

申请号：US09486300

申请日：2000-02-24

申请人： Kazuyuki Egashira ,  Masahiko Okui ,  Manabu Nishimoto ,  Tadami Tanaka ,  Shunji Kuragaki ,  Takayuki Kubo ,  Shingo Kizaki ,  Junji Horii ,  Makoto Ito

发明人： Kazuyuki Egashira ,  Masahiko Okui ,  Manabu Nishimoto ,  Tadami Tanaka ,  Shunji Kuragaki ,  Takayuki Kubo ,  Shingo Kizaki ,  Junji Horii ,  Makoto Ito

IPC分类号： C30B1514

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206

摘要： A method of producing a high-quality silicon single crystal of a large diameter and a long size in a good yield by controlling the positions where ring-like oxygen-induced stacking faults (R-OSF) occur in the crystal faces and minimizing grown-in defects such a dislocation clusters and infrared scattering bodies that are introduced in the pulling step. Wafers produced from the above-high-quality silicon single crystal contain little harmful defects that would deteriorate device characteristics and can be effectively adapted to larger scale integration and size reduction of the devices. Therefore, the method can be extensively utilized in the field of producing semiconductor silicon single crystals.

摘要翻译： 通过控制在晶面中发生环状氧诱导堆垛层错（R-OSF）的位置，并且使生长期最长的方法，通过控制产生高直径和长尺寸的高质量硅单晶的方法， 在引入步骤中引入的诸如位错簇和红外散射体的缺陷中。 由上述高质量硅单晶制造的晶片几乎没有损坏器件特性的有害缺陷，并且可以有效地适应于器件的大规模集成和尺寸减小。 因此，该方法可广泛用于制造半导体硅单晶领域。

公开(公告)号：US10066313B2

公开(公告)日：2018-09-04

申请号：US12458410

申请日：2009-07-10

申请人： Ken Hamada ,  Hiroaki Taguchi ,  Kazuyuki Egashira

发明人： Ken Hamada ,  Hiroaki Taguchi ,  Kazuyuki Egashira

IPC分类号： C30B15/20 ,  C30B15/14 ,  C30B29/06 ,  C30B35/00

摘要： After melting raw materials, a distance between a raw material melt surface and a heat-shielding member disposed so as to face to the melt surface is adjusted based on temporal changes in chamber inside conditions, such as the heater temperature at the time of completion of the seed crystal equilibration operation carried out after completion of the raw material melting procedure and/or lag time required for completion of the seed crystal equilibration operation following completion of the raw material melting procedure. As a result, single crystals can be produced efficiently and in high yield, and further, by controlling the crystal interior temperature gradient by modifying the distance between the melt surface and the heat-shielding member, it becomes possible to control the ratio V/G (V:pulling speed, G:crystal interior temperature gradient) to thereby produce single crystals free of crystal defects such as COPs and/or dislocation clusters.

公开(公告)号：US07645990B2

公开(公告)日：2010-01-12

申请号：US11928269

申请日：2007-10-30

申请人： Kouji Takemura ,  Kazuyuki Egashira ,  Yutaka Tanaka

发明人： Kouji Takemura ,  Kazuyuki Egashira ,  Yutaka Tanaka

IPC分类号： H01L27/16

CPC分类号： G01J5/22 ,  G01J1/44 ,  H04N5/33 ,  H04N5/335 ,  H04N5/35563

摘要： Thermal-type infrared imaging device comprises an infrared ray detection unit in which pixels, each of which includes a bolometer, are arranged two-dimensionally; and a signal processing unit that sequentially reads signal of each bolometer in synchronization with switching operation of a horizontal shift register and a vertical shift register, integrates the read signal using an integration circuit, and outputs the integrated signal. The signal processing unit is configured so that it can set a sensitivity (for example, voltage applied to bolometer, capacitance of a capacitor in the integration circuit, and/or period of time for integrating the signal) for each pixel according to a predetermined pattern in synchronization with switching operation for classifying a plurality of pixels into a plurality of types of pixels for which different sensitivities are set, for example, high-sensitivity pixels 15 with a narrow temperature measurement range and a high temperature resolution and low-sensitivity pixels 16 with a wider temperature measurement range and a lower temperature resolution than those of the high-sensitivity pixels 15.

摘要翻译： 热式红外线成像装置包括红外线检测单元，其中包括测辐射热计的每个像素被二维布置; 以及信号处理单元，其与水平移位寄存器和垂直移位寄存器的切换操作同步地依次读取每个测辐射热板的信号，并使用积分电路对读出信号进行积分，并输出积分信号。 信号处理单元被配置为使得其可以根据预定模式设置灵敏度（例如，施加于测辐射热计的电压，积分电路中的电容器的电容和/或用于积分信号的时间） 与用于将多个像素分类为设置不同灵敏度的多种像素的切换操作同步，例如具有窄温度测量范围和高温度分辨率和低灵敏度像素16的高灵敏度像素15 具有比高灵敏度像素15更宽的温度测量范围和更低的温度分辨率。

公开(公告)号：US20060107889A1

公开(公告)日：2006-05-25

申请号：US11131333

申请日：2005-05-18

申请人： Norihito Fukatsu ,  Kazuyuki Egashira ,  Senrin Fu

发明人： Norihito Fukatsu ,  Kazuyuki Egashira ,  Senrin Fu

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/305 ,  Y10S117/917

摘要： The invention provides an apparatus for producing a single crystal, and a method for producing a silicon single crystal using the same. An apparatus for producing a single crystal includes a heating device which heats polycrystalline silicon raw material held in a crucible to form silicon melt, and a pulling up device which grows a silicon single crystal while pulling it up from the silicon melt accompanied with rotation. By providing the apparatus with a magnetic field generation unit which applies to the silicon melt a cusp magnetic field a shape of neutral plane of which is symmetric around the rotation axis of the silicon single crystal and is curved in the upward direction, various conditions for producing a silicon single crystal having a defect free region is relaxed, and a silicon single crystal having a defect free region is produced at high efficiency.

摘要翻译： 本发明提供一种用于制造单晶的装置，以及使用该单晶的硅单晶的制造方法。 单晶体的制造装置包括加热保持在坩埚中的多晶硅原料以形成硅熔体的加热装置，以及伴随旋转从硅熔体中拉出硅单晶的提拉装置。 通过向该装置提供磁场产生单元，该磁场产生单元向硅熔体施加尖角磁场，其中性平面的形状围绕单晶的旋转轴对称并且在向上方向上弯曲，生成的各种条件 具有无缺陷区域的硅单晶被松弛，并且以高效率产生具有无缺陷区域的硅单晶。

公开(公告)号：US6113687A

公开(公告)日：2000-09-05

申请号：US193251

申请日：1998-11-17

申请人： Masataka Horai ,  Kazuyuki Egashira ,  Tadami Tanaka

发明人： Masataka Horai ,  Kazuyuki Egashira ,  Tadami Tanaka

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  H01L21/208

CPC分类号： C30B29/06 ,  C30B15/203

摘要： A silicon single crystal wafer having good device characteristics can be manufactured according to the Czochralski method without formation of any dislocation cluster within a crystal surface. Where a silicon single crystal having an oxygen concentration of less than 8.5.times.10.sup.17 atoms/cm.sup.3 (ASTM F1188-88) is manufactured, a radius of a latent zone of oxidation induced stacking defects ring-likely-distributed in the crystal surface is made within a range of 70% to 0% of a crystal radius, and a value of V/G (mm.sup.2 /.degree. C..multidot.minute) is controlled at a predetermined critical value or over at radial positions except an outermost periphery of the crystal when a pulling rate is taken as V (mm/minute), and a crystalline temperature gradient along the pulling axis is taken as G (.degree. C./mm). On the other hand, when a silicon single crystal having an oxygen concentration of not less than 8.5.times.10.sup.17 atoms/cm.sup.3 (ASTM F1188-88) is manufactured, a pulling rate is further set at 1.0 mm/minute or over. In the method for manufacturing the silicon single crystal wafer, it is preferred to calculate the crystalline temperature gradient G along the pulling axis through heat transfer calculation, set the critical value of V/G at 0.20 mm.sup.2 /.degree. C..multidot.minute, and control the value of V/G at a value larger than the critical value.

摘要翻译： 可以根据切克劳斯基法在不在晶体表面内形成任何位错簇的情况下制造具有良好器件特性的硅单晶晶片。 在制造氧浓度小于8.5×10 17原子/ cm 3的硅单晶（ASTM F1188-88）的情况下，在晶体表面内可能分布的氧化诱导堆垛层叠的潜在区域的半径在 范围为70％至0％的晶体半径，并且V / G（mm2 /℃·分钟）的值被控制在预定临界值或超过晶体的最外周边的径向位置，当拉伸速率 取为V（mm /分钟），沿着牵引轴的结晶温度梯度为G（℃/ mm）。 另一方面，当制造氧浓度不小于8.5×10 17原子/ cm 3的硅单晶（ASTM F1188-88）时，拉伸速度进一步设定为1.0mm /分钟或更高。 在制造硅单晶晶片的方法中，优选通过热传导计算沿着牵引轴计算结晶温度梯度G，将V / G的临界值设定为0.20mm 2 /℃×分钟，并控制 V / G的值大于临界值。