公开(公告)号：US07273647B2

公开(公告)日：2007-09-25

申请号：US10809712

申请日：2004-03-26

申请人： Hideshi Nishikawa ,  Nobumitsu Takase ,  Kazuyuki Egashira ,  Hiroshi Hayakawa

发明人： Hideshi Nishikawa ,  Nobumitsu Takase ,  Kazuyuki Egashira ,  Hiroshi Hayakawa

IPC分类号： B32B9/04

CPC分类号： C30B33/00 ,  C30B29/06 ,  H01L21/3225 ,  Y10T428/21

摘要： A silicon annealed wafer having a sufficient thick layer free from COP defects on the surface, and a sufficient uniform BMD density in the inside can be produced by annealing either a base material wafer having nitrogen at a concentration of less than 1×1014 atoms/cm3, COP defects having a size of 0.1 μm or less in the highest frequency of occurrence and no COP defects having a size of 0.2 μm or more, oxygen precipitates at a density of 1×104 counts/cm2 or more, and BMDs (oxygen precipitates), where the ratio of the maximum to the minimum of the BMD density in the radial direction of the wafer is 3 or less, or a base material wafer grown at specific average temperature gradients within specific temperature ranges and specific cooling times for a single crystal at a nitrogen concentration of less than 1×1014 atoms/cm3, employing the Czochralski method. Moreover, a silicon epitaxial wafer having very small defects and a uniform BMD distribution in the inside can be formed by growing an epitaxial layer on the surface of either the first type base material wafer or the second type base material wafer. Both the silicon annealed wafer and the silicon epitaxial wafer greatly reduce the rate of producing defective devices, thereby enabling the device productivity to be enhanced.

摘要翻译： 具有在表面上没有COP缺陷的足够厚的厚层的硅退火晶片，并且可以通过退火具有小于1×10 14的浓度的氮的基材晶片来制造内部的足够均匀的BMD密度， / SUP>原子/ cm 3，出现发生频率的大小为0.1μm以下的COP缺陷，没有大小为0.2μm以上的COP缺陷，氧浓度为 1×10 4个/ cm 2以上的BMD（氧沉淀物），其中晶片的径向BMD密度的最大值与最小值之比 在特定温度范围内以特定平均温度梯度生长的基材晶片和氮浓度小于1×10 14原子/ cm 2的单晶的比冷却时间为3以下， 3，采用Czochralski法。 此外，可以通过在第一类型基材晶片或第二类型基材晶片的表面上生长外延层来形成具有非常小缺陷和均匀的BMD分布的硅外延晶片。 硅退火晶片和硅外延晶片都大大降低了制造缺陷器件的速率，从而能够提高器件的生产率。

公开(公告)号：US06458204B1

公开(公告)日：2002-10-01

申请号：US09717135

申请日：2000-11-22

申请人： Masahiko Okui ,  Hiroki Murakami ,  Kazuyuki Egashira ,  Makoto Ito ,  Hiroshi Hayakawa ,  Kelly Garret ,  Yoshinori Shirakawa

发明人： Masahiko Okui ,  Hiroki Murakami ,  Kazuyuki Egashira ,  Makoto Ito ,  Hiroshi Hayakawa ,  Kelly Garret ,  Yoshinori Shirakawa

IPC分类号： C30B1520

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/305

摘要： A method of producing high-quality and large-diameter single crystals by the Czochralski method is disclosed which can provide wafers with a minimized number of such grown-in defects as dislocation clusters and laser scattering tomography defects. Specifically, it is a method of producing silicon single crystals which comprises carrying out the crystal pulling while maintaining the solid-melt interface during pulling in the shape of an upward convex with the central portion of the interface being higher by at least 5 mm than the peripheral region thereof and while applying a magnetic field, and optionally in addition to the above, while maintaining the temperature gradient in the direction of axis of pulling in the peripheral region at a level lower than that in the central portion in the range of from the melting point to 1,200° C. In this case, it is desirable that the portion of the single crystal surface lying at least 50 mm above the melt surface be shielded from direct radiant heat from the heater and/or crucible wall, that a horizontal magnetic field of 0.08 to 0.3 T be applied in parallel with the melt surface or a cusped magnetic field showing an intensity of 0.02 to 0.07 T at a crucible wall site on the melt surface be applied and that the crucible be rotated at a speed of not more than 5 min−1 and the single crystal at a speed of not less than 13 min−1.

摘要翻译： 公开了通过Czochralski方法生产高质量和大直径单晶的方法，其可以为晶片提供最少数量的诸如位错簇和激光散射层析成像缺陷的这种生长缺陷。 具体地说，它是一种生产硅单晶的方法，其中包括在拉伸成呈向上凸起的形状的同时保持固溶体界面的同时进行晶体拉伸，其中界面的中心部分高​​于 并且在施加磁场的同时，并且可选地除了上述之外，同时保持在周边区域中的拉动轴线方向上的温度梯度比在中心部分的温度梯度低 熔点为1200℃。在这种情况下，希望在熔体表面上方至少50毫米的单晶表面的部分被屏蔽不受来自加热器和/或坩埚壁的直接辐射热，即水平磁 在熔融表面上的坩埚壁部位处，与熔体表面平行施加0.08〜0.3T的场，或者表示强度为0.02〜0.07T的尖细磁场b 并且坩埚以不超过5分钟-1的速度旋转，并且单晶以不小于13分钟-1的速度旋转。

公开(公告)号：US20130330792A1

公开(公告)日：2013-12-12

申请号：US13976786

申请日：2011-09-15

申请人： Norihiro Takeuchi ,  Masahiro Henmi ,  Jihoon Cheon ,  Masateru Ito ,  Hiroshi Hayakawa ,  Makoto Nishida

发明人： Norihiro Takeuchi ,  Masahiro Henmi ,  Jihoon Cheon ,  Masateru Ito ,  Hiroshi Hayakawa ,  Makoto Nishida

IPC分类号： C12P7/56

CPC分类号： C12P7/56 ,  B01D61/025 ,  B01D65/02 ,  B01D2311/06 ,  B01D2311/2642 ,  B01D2311/2669 ,  B01D2321/12 ,  B01D2321/162 ,  B01D2321/164 ,  B01D2321/168 ,  C12M47/10

摘要： A method of producing a chemical by continuous fermentation includes a fermentation step of converting a fermentation feedstock to a fermentation liquid containing a chemical by fermentation on cultivation of a microorganism; a membrane separation step of recovering the chemical as a filtrate by a separation membrane from the fermentation liquid; a concentrating step of obtaining a permeate and a concentrate containing the chemical by a reverse osmosis membrane from the filtrate; and/or a purification step of distilling the filtrate to increase a purity of the chemical, in which, cleaning etc. of the separation membrane in the membrane separation step is preformed by using the permeated liquid from the reverse osmosis membrane in the concentrating step and/or the condensed liquid in the purification step.

摘要翻译： 通过连续发酵生产化学品的方法包括发酵步骤，其通过在培养微生物时通过发酵将发酵原料转化成含有化学品的发酵液; 膜分离步骤，通过分离膜从发酵液中回收作为滤液的化学品; 浓缩步骤，从滤液中通过反渗透膜获得含有该化学物质的渗透物和浓缩物; 和/或纯化步骤，蒸馏滤液以提高化学品的纯度，其中通过在浓缩步骤中使用来自反渗透膜的透过液体来进行膜分离步骤中的分离膜的清洗等，以及 /或纯化步骤中的冷凝液体。

公开(公告)号：US08518367B2

公开(公告)日：2013-08-27

申请号：US13130164

申请日：2009-11-12

申请人： Junji Akimoto ,  Kunimitsu Kataoka ,  Akemi Kawashima ,  Hiroshi Hayakawa

发明人： Junji Akimoto ,  Kunimitsu Kataoka ,  Akemi Kawashima ,  Hiroshi Hayakawa

IPC分类号： C01G25/02 ,  C01G27/02 ,  C01B6/24 ,  C01D1/02 ,  C01G23/00

CPC分类号： C01G23/047 ,  C01G23/003 ,  C01G23/005 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2004/03 ,  C01P2006/40 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/485

摘要： A method of producing a titanium oxide, including the steps of: ion-exchanging a sodium titanium oxide Na2Ti6O13, to synthesize Li2Ti6O13; subjecting Li2Ti6O13 to proton exchange, to give H2Ti6O13; and subjecting H2Ti6O13, as a starting material, to a heat treatment.

摘要翻译： 一种氧化钛的制造方法，其特征在于，包括以下工序：离子交换钠二氧化钛Na 2 Ti 6 O 13，合成Li 2 Ti 6 O 13; 使Li2Ti6O13进行质子交换，得到H 2 Ti 6 O 13; 并将作为原料的H 2 Ti 6 O 13进行热处理。

公开(公告)号：US20130080604A1

公开(公告)日：2013-03-28

申请号：US13378066

申请日：2011-09-22

申请人： Hiroshi Hayakawa ,  Takeshi Arisaka ,  Takaki Kuroda ,  Takumi Tomita

发明人： Hiroshi Hayakawa ,  Takeshi Arisaka ,  Takaki Kuroda ,  Takumi Tomita

IPC分类号： G06F15/177

CPC分类号： H04L41/022 ,  H04L41/12

摘要： The present invention is for efficiently managing large numbers of apparatuses using multiple management protocols. A management information acquisition part 1A uses multiple different management protocols P1 and P2 to acquire management information for each of the management protocols from each apparatus 3. Anode configuration information management part 1B identifies apparatus configuration information acquired from the same apparatus of the respective apparatuses 3 by comparing the apparatus configuration information, and collectively manages these multiple pieces of apparatus configuration information as a single piece of apparatus configuration information. A component information management part 1C identifies multiple pieces of component information related to the same component, and manages these identified multiple pieces of component information after associating these pieces information with each other.

摘要翻译： 本发明是为了有效地管理使用多种管理协议的大量设备。 管理信息获取部1A使用多个不同的管理协议P1和P2从每个装置3获取每个管理协议的管理信息。阳极配置信息管理部分1B识别从各个装置3的相同装置获取的装置配置信息， 比较装置配置信息，并将这些多件装置配置信息共同管理为单件装置配置信息。 分量信息管理部分1C识别与相同分量相关的多个分量信息，并且在将这些分块信息彼此关联之后管理这些识别的多个分量信息。

公开(公告)号：US20090219599A1

公开(公告)日：2009-09-03

申请号：US12298341

申请日：2006-05-08

申请人： Hiroshi Hayakawa

发明人： Hiroshi Hayakawa

IPC分类号： G02B26/10

CPC分类号： G02B26/124 ,  G02B26/101 ,  G06K7/10613

摘要： A changeable apparatus for scanning a symbol is disclosed wherein by selectively changing the position of a bending mirror (101), different scan patterns are produced. In a preferred embodiment, the different positions of the bending mirror (101) result in a scanning beam (107, 108) being directed off of different polygon scanning mirrors (104, 105) to create the different scanning patterns.

摘要翻译： 公开了一种用于扫描符号的可变装置，其中通过选择性地改变弯曲镜（101）的位置，产生不同的扫描图案。 在优选实施例中，弯曲镜（101）的不同位置导致扫描光束（107,108）被引导离开不同的多边形扫描镜（104,105）以产生不同的扫描图案。

公开(公告)号：USPP18223P2

公开(公告)日：2007-11-20

申请号：US10367447

申请日：2003-02-14

申请人： Hiroshi Hayakawa

发明人： Hiroshi Hayakawa

IPC分类号： A01H5/00

CPC分类号： A01H5/02

摘要： A new Clematis cultivar which produces attractive violet flowers. This new and distinct variety has shown to be uniform and stable in the resulting generations from asexual propagation.

摘要翻译： 一种新的铁线莲品种，产生有吸引力的紫罗兰花。 这种新的和独特的品种在无性繁殖的结果中表现出统一和稳定。

公开(公告)号：US20070194220A1

公开(公告)日：2007-08-23

申请号：US11358244

申请日：2006-02-21

申请人： Hiroshi Hayakawa

发明人： Hiroshi Hayakawa

IPC分类号： H01J5/02

CPC分类号： H04N1/00525 ,  H04N1/195 ,  H04N2101/00

摘要： A handheld imaging device includes a CCD array or similar detector which is tilted with respect to the incoming light. The tilt permits a narrower handheld device to be manufactured, as the housing need not be as wide as the CCD or similar array.

摘要翻译： 手持式成像装置包括相对于入射光倾斜的CCD阵列或类似的检测器。 倾斜允许制造更窄的手持装置，因为外壳不需要像CCD或类似阵列一样宽。

公开(公告)号：US6003127A

公开(公告)日：1999-12-14

申请号：US725709

申请日：1996-10-04

申请人： Hiroshi Hayakawa ,  Harutsugu Fukumoto ,  Hiroaki Tanaka

发明人： Hiroshi Hayakawa ,  Harutsugu Fukumoto ,  Hiroaki Tanaka

IPC分类号： G06F9/32 ,  G06F9/38 ,  G06F9/40

CPC分类号： G06F9/3804 ,  G06F9/30058 ,  G06F9/30167

摘要： A pipeline processing apparatus for performing processing operations in a succession of processing cycles, in which each cycle is composed of a succession of stages that include an instruction decoding stage for decoding an instruction associated with the cycle and an execution stage for executing an operation dependent on the instruction, and the processing cycles include a first cycle which starts at a first time and a second cycle that begins at a second time that is after the first time and that overlaps the first cycle in time. The apparatus is constructed and controlled for causing a branch instruction to be decoded in the instruction decoding stage of the first cycle; and for effecting a calculation in the execution stage of the first cycle, dependent on the branch instruction decoded in the instruction decoding stage of the first cycle.

摘要翻译： 一种流水线处理装置，用于在一系列处理周期中执行处理操作，其中每个周期由包括用于解码与该周期相关联的指令的指令解码级的一系列级组成，以及用于执行依赖于 指令和处理周期包括从第一时间开始的第一周期和从第一次开始的第二个周期开始并且与第一周期重叠的第二周期。 该装置被构造和控制，用于使分支指令在第一周期的指令解码阶段被解码; 并且用于在第一周期的执行阶段中进行计算，这取决于在第一周期的指令解码阶段中解码的分支指令。

公开(公告)号：US5623134A

公开(公告)日：1997-04-22

申请号：US404790

申请日：1995-03-15

申请人： Hiroshi Hayakawa

发明人： Hiroshi Hayakawa

IPC分类号： B60R16/02 ,  H01H3/20 ,  H01H23/00 ,  H01H23/16 ,  H01H25/00

CPC分类号： H01H3/20 ,  H01H25/006

摘要： A switch for preventing unintentional actuation of, for example, a door lock in an automobile. The switch includes a slider and a control lever pivotally mounted on the slider. When the slider is in a neutral position, a guide member located in a housing of the switch abuts a protrusion of the control lever such that pivoting of the control lever is prevented, thereby preventing unintentional actuation of the door lock. To actuate the switch, the slider is moved to a second position wherein the protrusion of the control lever is not blocked by the guide member, and subsequent pivoting of the control member causes the protrusion to push a movable contact into a fixed contact of the switch. A ball is biased into a groove formed in the slider to provide a click sensation when the slider is moved from the neutral position to the second position.

摘要翻译： 用于防止例如汽车中的门锁的意外致动的开关。 开关包括滑块和可枢转地安装在滑块上的控制杆。 当滑块处于中立位置时，位于开关壳体中的引导构件抵靠控制杆的突起，从而防止控制杆的枢转，从而防止门锁的无意致动。 为了致动开关，滑块移动到第二位置，其中控制杆的突起不被引导构件阻挡，并且随后的控制构件的枢转使得突起将可动触头推入开关的固定触点 。 当滑块从中立位置移动到第二位置时，球被偏压到形成在滑块中的凹槽中以提供咔哒声。