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公开(公告)号：US07273647B2
公开(公告)日：2007-09-25
申请号：US10809712
申请日：2004-03-26
IPC分类号： B32B9/04
CPC分类号： C30B33/00 , C30B29/06 , H01L21/3225 , Y10T428/21
摘要： A silicon annealed wafer having a sufficient thick layer free from COP defects on the surface, and a sufficient uniform BMD density in the inside can be produced by annealing either a base material wafer having nitrogen at a concentration of less than 1×1014 atoms/cm3, COP defects having a size of 0.1 μm or less in the highest frequency of occurrence and no COP defects having a size of 0.2 μm or more, oxygen precipitates at a density of 1×104 counts/cm2 or more, and BMDs (oxygen precipitates), where the ratio of the maximum to the minimum of the BMD density in the radial direction of the wafer is 3 or less, or a base material wafer grown at specific average temperature gradients within specific temperature ranges and specific cooling times for a single crystal at a nitrogen concentration of less than 1×1014 atoms/cm3, employing the Czochralski method. Moreover, a silicon epitaxial wafer having very small defects and a uniform BMD distribution in the inside can be formed by growing an epitaxial layer on the surface of either the first type base material wafer or the second type base material wafer. Both the silicon annealed wafer and the silicon epitaxial wafer greatly reduce the rate of producing defective devices, thereby enabling the device productivity to be enhanced.
摘要翻译： 具有在表面上没有COP缺陷的足够厚的厚层的硅退火晶片，并且可以通过退火具有小于1×10 14的浓度的氮的基材晶片来制造内部的足够均匀的BMD密度， / SUP>原子/ cm 3，出现发生频率的大小为0.1μm以下的COP缺陷，没有大小为0.2μm以上的COP缺陷，氧浓度为 1×10 4个/ cm 2以上的BMD（氧沉淀物），其中晶片的径向BMD密度的最大值与最小值之比 在特定温度范围内以特定平均温度梯度生长的基材晶片和氮浓度小于1×10 14原子/ cm 2的单晶的比冷却时间为3以下， 3，采用Czochralski法。 此外，可以通过在第一类型基材晶片或第二类型基材晶片的表面上生长外延层来形成具有非常小缺陷和均匀的BMD分布的硅外延晶片。 硅退火晶片和硅外延晶片都大大降低了制造缺陷器件的速率，从而能够提高器件的生产率。
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公开(公告)号：US20050000410A1
公开(公告)日：2005-01-06
申请号：US10828555
申请日：2004-04-21
摘要： To suppress a fluctuation in resistivity around a target value to thereby stably manufacture high resistivity silicon single crystals having almost the same resistivity values in a manufacturing method wherein a silicon raw material is molten to manufacture a high resistivity silicon single crystal in the range of from 100 to 2000 Ω cm with a CZ method. In a case where poly-silicon produced with a Siemens method using trichlorosilane as raw material is used as the silicon raw material, an impurity concentration in the silicon raw material is selected so as to be controlled in the range of from −5 to 50 ppta method in terms of (a donor concentration—an acceptor concentration) and the selected poly-silicon is used. In a case of a MCZ method, the poly-silicon is selected in the range of from −25 to 20 ppta and the selected poly-silicon is used. Instead of the raw material, poly-silicon produced with a Siemens method using monosilane as raw material is used. Alternatively, a silicon crystal manufactured with a CZ method or a MCZ method using poly-silicon raw material is used.
摘要翻译： 为了抑制围绕目标值的电阻率的波动，从而在将硅原料熔融以制造范围为100的高电阻率硅单晶的制造方法中稳定地制造具有几乎相同的电阻率值的高电阻率硅单晶 到2000欧米加厘米与CZ方法。 在使用以三氯硅烷为原料的西门子方法制造的多晶硅作为硅原料的情况下，选择硅原料中的杂质浓度以控制在-5〜50ppta的范围内 使用（供体浓度 - 受体浓度）和选择的多晶硅的方法。 在MCZ方法的情况下，多晶硅的选择范围为-25〜20ppta，使用所选择的多晶硅。 使用以硅烷为原料的西门子法生产的多晶硅代替原料。 或者，使用以CZ法制造的硅晶体或使用多晶硅原料的MCZ法。
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公开(公告)号：US07397110B2
公开(公告)日：2008-07-08
申请号：US10512405
申请日：2003-04-16
IPC分类号： H01L29/36 , H01L21/322
CPC分类号： H01L21/3225
摘要： A high-resistance silicon wafer is manufactured in which a gettering ability, mechanical strength, and economical efficiency are excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is implemented on the side of a device maker. A heat treatment for forming an oxygen precipitate nucleus is performed at 500 to 900° C. for 5 hours or more in a non-oxidizing atmosphere and a heat treatment for growing an oxygen precipitate is performed at 950 to 1050° C. for 10 hours or more on a high-oxygen and carbon-doped high-resistance silicon wafer in which resistivity is 100 Ωcm or more, an oxygen concentration is 14×1017 atoms/cm3 (ASTM F-121, 1979) or more and a carbon concentration is 0.5×1016 atoms/cm3 or more. By these heat treatments, a remaining oxygen concentration in the wafer is controlled to be 12×1017 atoms/cm3 (ASTM F-121, 1979) or less. Thus, there is provided a high-resistance, low-oxygen and high-strength silicon wafer in which resistivity is 100 Ωcm or more and an oxygen precipitate (BMD) having a size of 0.2 μm is formed so as to have high density of 1×104/cm2 or more.
摘要翻译： 制造高电阻硅晶片，其中吸收能力，机械强度和经济效率优异，并且在用于形成电路的热处理中有效地防止了氧热供体的产生，该电路在 设备制造商。 在非氧化性气氛中，在500〜900℃下进行形成氧沉淀核的热处理5小时以上，在950〜1050℃下进行氧沉淀的热处理10小时 以上，电阻率为100Ωm以上的高氧和碳掺杂高电阻硅晶片，氧浓度为14×10 17原子/ cm 3（以下） ASTM F-121,1979）或更高，碳浓度为0.5×10 16原子/ cm 3以上。 通过这些热处理，将晶片中的剩余氧浓度控制为12×10 17原子/ cm 3（ASTM F-121,1979）或更小。 因此，提供了电阻率为100Ωm或更大的高电阻，低氧和高强度硅晶片，并且形成具有0.2μm大小的氧沉淀物（BMD），以便具有高密度的1×10 4/4以上。
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公开(公告)号：US20050253221A1
公开(公告)日：2005-11-17
申请号：US10512405
申请日：2003-04-16
IPC分类号： H01L21/26 , H01L21/322 , H01L29/167 , H01L21/22
CPC分类号： H01L21/3225
摘要： A high-resistance silicon wafer is manufactured in which a gettering ability, mechanical strength, and economical efficiency are excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is implemented on the side of a device maker. A heat treatment for forming an oxygen precipitate nucleus is performed at 500 to 900° C. for 5 hours or more in a non-oxidizing atmosphere and a heat treatment for growing an oxygen precipitate is performed at 950 to 1050° C. for 10 hours or more on a high-oxygen and carbon-doped high-resistance silicon wafer in which resistivity is 100 Ωcm or more, an oxygen concentration is 14×1017 atoms/cm3 (ASTM F-121, 1979) or more and a carbon concentration is 0.5×1016 atoms/cm3 or more. By these heat treatments, a remaining oxygen concentration in the wafer is controlled to be 12×1017 atoms/cm3 (ASTM F-121, 1979) or less. Thus, there is provided a high-resistance, low-oxygen and high-strength silicon wafer in which resistivity is 100 Ωcm or more and an oxygen precipitate (BMD) having a size of 0.2 μm is formed so as to have high density of 1×104/cm2 or more.
摘要翻译： 制造高电阻硅晶片，其中吸收能力，机械强度和经济效率优异，并且在用于形成电路的热处理中有效地防止了氧热供体的产生，该电路在 设备制造商。 在非氧化性气氛中，在500〜900℃下进行形成氧沉淀核的热处理5小时以上，在950〜1050℃下进行氧沉淀的热处理10小时 以上，电阻率为100Ωm以上的高氧和碳掺杂高电阻硅晶片，氧浓度为14×10 17原子/ cm 3（以下） ASTM F-121,1979）或更高，碳浓度为0.5×10 16原子/ cm 3以上。 通过这些热处理，将晶片中的剩余氧浓度控制为12×10 17原子/ cm 3（ASTM F-121,1979）或更小。 因此，提供了电阻率为100Ωm或更大的高电阻，低氧和高强度硅晶片，并且形成具有0.2μm大小的氧沉淀物（BMD），以便具有高密度的1×10 4/4以上。
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公开(公告)号：US07220308B2
公开(公告)日：2007-05-22
申请号：US10828555
申请日：2004-04-21
IPC分类号： C30B15/20
摘要： To suppress a fluctuation in resistivity around a target value to thereby stably manufacture high resistivity silicon single crystals having almost the same resistivity values in a manufacturing method wherein a silicon raw material is molten to manufacture a high resistivity silicon single crystal in the range of from 100 to 2000 Ω cm with a CZ method. In a case where poly-silicon produced with a Siemens method using trichlorosilane as raw material is used as the silicon raw material, an impurity concentration in the silicon raw material is selected so as to be controlled in the range of from −5 to 50 ppta method in terms of (a donor concentration—an acceptor concentration) and the selected poly-silicon is used. In a case of a MCZ method, the poly-silicon is selected in the range of from −25 to 20 ppta and the selected poly-silicon is used. Instead of the raw material, poly-silicon produced with a Siemens method using monosilane as raw material is used. Alternatively, a silicon crystal manufactured with a CZ method or a MCZ method using poly-silicon raw material is used.
摘要翻译： 为了抑制围绕目标值的电阻率的波动，从而在将硅原料熔融以制造范围为100的高电阻率硅单晶的制造方法中稳定地制造具有几乎相同的电阻率值的高电阻率硅单晶 到2000欧米加厘米与CZ方法。 在使用以三氯硅烷为原料的西门子方法制造的多晶硅作为硅原料的情况下，选择硅原料中的杂质浓度以控制在-5〜50ppta的范围内 使用（供体浓度 - 受体浓度）和选择的多晶硅的方法。 在MCZ方法的情况下，多晶硅的选择范围为-25〜20ppta，使用所选择的多晶硅。 使用以硅烷为原料的西门子法生产的多晶硅代替原料。 或者，使用以CZ法制造的硅晶体或使用多晶硅原料的MCZ法。
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公开(公告)号：US07014704B2
公开(公告)日：2006-03-21
申请号：US10455609
申请日：2003-06-06
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/04 , C30B15/206
摘要： A method for growing a silicon single crystal used for semiconductor integrated circuit devices, wherein the single crystal is grown by the CZ method at a nitrogen concentration of 1×1013 atoms/cm3–1×1015 atoms/cm3 with a cooling rate of not less than 2.5° C./min at a crystal temperature of 1150° C.–1000° C., in which case, the pulling rate is adjusted such that the outside diameter of a circular region including oxidation-induced stacking faults generated at the center of a wafer which is subjected to the oxidation heat treatment at high temperature is not more than ⅗ of the wafer diameter, wherein the wafer is prepared by slicing the grown single crystal. In the growth method, the concentration of oxygen in the silicon single crystal is preferably not more than 9×1017 atoms/cm3 (ASTM '79). With this method, the silicon single crystal, in which the generation of Grown-in defects can be effectively suppressed, can be produced in a simple process without any increase in the production cost. Moreover, a specification of the oxygen concentration and the application of the outward diffusion treatment are capable of producing a wafer, which is optimally used for monitoring particles.
摘要翻译： 一种生长用于半导体集成电路器件的硅单晶的方法，其中通过CZ法以1×10 3原子/ cm 3的氮浓度生长单晶。 -1×10 15原子/ cm 3，冷却速率不低于2.5℃/分钟，晶体温度为1150℃-1000℃， 在这种情况下，调整拉伸速度，使得在高温下进行氧化热处理的晶片的中心处产生的氧化诱发堆垛层错的圆形区域的外径不大于 晶片直径，其中通过对生长的单晶进行切片来制备晶片。 在生长方法中，硅单晶中氧的浓度优选不超过9×10 17原子/ cm 3（ASTM '79）。 利用这种方法，可以在简单的工艺中生产出能够有效抑制生成缺陷的硅单晶，而不会增加生产成本。 此外，氧浓度的规格和向外扩散处理的应用能够生产最佳地用于监测颗粒的晶片。
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7.发明授权公开(公告)号：US06835245B2
公开(公告)日：2004-12-28
申请号：US09883922
申请日：2001-06-20
IPC分类号： C30B3302
CPC分类号： C30B29/06 , C30B15/206
摘要： Epitaxial wafers showing marked IG effects can be manufactured from silicon single crystals doped or not doped with nitrogen without requiring any additional heat treatment process step while reducing the density of epitaxial layer defects. According to the first manufacturing method, an epitaxial layer is allowed to grow on the surface of a wafer sliced from a single crystal produced by employing a cooling rate of not less than 7.3° C./min in the temperature range of 1200-1050° C. in the step of pulling up thereof. According to the second manufacturing method, an epitaxial layer is allowed to grow on the surface of a silicon wafer sliced from a silicon single crystal doped with 1×1012 atoms/cm3 to 1×1014 atoms/cm3 as produced by employing a cooling rate of not less than 2.7° C./min in the temperature range of 1150-1020° C. and then a cooling rate of not more than 1.2° C./min in the temperature range of 1000-850° C. in the step of pulling up thereof.
摘要翻译： 显示出显着的IG效应的外延晶片可以由掺杂或不掺杂氮的单晶硅制造，而不需要任何额外的热处理工艺步骤，同时降低外延层缺陷的密度。 根据第一种制造方法，允许外延层在从在1200-1050°的温度范围内采用不低于7.3℃/分钟的冷却速率制备的单晶切片的晶片的表面上生长 C.在拉起它的步骤。 根据第二制造方法，允许外延层在从掺杂有1×10 12原子/ cm 3至1×10 14原子/ cm 3的硅单晶切片的硅晶片的表面上生长， 通过在1150-1020℃的温度范围内使用不低于2.7℃/分钟的冷却速率，然后在1000℃的温度范围内的冷却速度不超过1.2℃/ 850℃。
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公开(公告)号：US06337219B1
公开(公告)日：2002-01-08
申请号：US09381685
申请日：1999-12-20
申请人： Hideshi Nishikawa
发明人： Hideshi Nishikawa
IPC分类号： G01R3126
CPC分类号： C30B29/06 , C30B15/203
摘要： A method of manufacturing a silicon single crystal to be grown by the Czochralski method, wherein a crystal is pulled up in a CZ furnace by changing an average pulling rate for a crystal, having a predetermined length, a plurality of times, a relation between the average pulling rate and the OSF ring diameter for each pulling length is examined, an average pulling rate pattern for generation or disappearance of an OSF ring at a predetermined position is designed based on the examined results, and the single crystal is grown according to the average pulling rate pattern, and a silicon wafer not having grown-in defects is manufactured.
摘要翻译： 一种通过切克劳斯基法生长的单晶硅的制造方法，其特征在于，通过改变具有规定长度的晶体的平均拉拔速度多次，在CZ炉中拉出晶体， 检查每个牵引长度的平均牵引速率和OSF环直径，基于检查结果设计在预定位置处的OSF环的产生或消失的平均牵引速率模式，并且根据平均值生长单晶 拉丝速度图案和不具有长期缺陷的硅晶片。
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公开(公告)号：US06709957B2
公开(公告)日：2004-03-23
申请号：US10173099
申请日：2002-06-18
申请人： Eiichi Asayama , Yasuo Koike , Tadami Tanaka , Toshiaki Ono , Masataka Horai , Hideshi Nishikawa
发明人： Eiichi Asayama , Yasuo Koike , Tadami Tanaka , Toshiaki Ono , Masataka Horai , Hideshi Nishikawa
IPC分类号： H01L2136
CPC分类号： C30B29/06 , C30B15/206 , C30B33/00
摘要： The invention relates to a method of producing epitaxial wafers for the manufacture of high integration density devices capable of showing stable gettering effect. Specifically, it provides (1) a method of producing epitaxial wafers which comprises subjecting a silicon wafer sliced from a single crystal ingot grown by doping with not less than 1×1013 atoms/cm3 of nitrogen to 15 minutes to 4 hours of heat treatment at a temperature not lower than 700° C. but lower than 900° C. and then to epitaxial growth treatment. It is desirable that the above single crystal ingot have an oxygen concentration of not less than 11×1017 atoms/cm3. Further, (2) the above heat treatment is desirably carried out prior to the step of mirror polishing of silicon wafers. Furthermore, (3) it is desirable that the pulling rate be not increased in starting tail formation as compared with the pulling rate of the body in growing the above single crystal ingot. By taking these means, it is possible to produce epitaxial wafers having an almost constant, high level of gettering effect irrespective of the site of wafer slicing from the single crystal ingot and, furthermore, suppress the occurrence of defects within the epitaxial layer.
摘要翻译： 本发明涉及一种生产用于制造能够显示出稳定的吸气效果的高集成度密度器件的外延晶片的方法。 具体地说，提供（1）一种外延晶片的制造方法，其特征在于，将从不少于1×10 13原子/ cm 3的氮掺杂生长的单晶锭切片的硅晶片经受15分钟〜4小时 在不低于700℃但低于900℃的温度下进行热处理，然后进行外延生长处理。 上述单晶锭的氧浓度最好不小于11×10 17原子/ cm 3。 此外，（2）上述热处理期望在硅晶片的镜面抛光步骤之前进行。 此外，（3）与在上述单晶锭生长中的本体的拉拔速度相比，起始尾部形成时的牵引速度最好不增加。 通过采用这些方法，可以制造具有几乎恒定的高水平的吸杂效应的外延晶片，而不管来自单晶锭的晶片切片的位置如何，并且还抑制外延层内的缺陷的发生。
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10.发明授权Method of annealing a semiconductor wafer in a hydrogen atmosphere to desorb surface contaminants 失效在氢气氛中退火半导体晶片以解吸表面污染物的方法
公开(公告)号：US5508207A
公开(公告)日：1996-04-16
申请号：US199170
申请日：1994-04-26
IPC分类号： H01L21/02 , H01L21/205 , H01L21/30 , H01L21/322 , H01L21/324 , H01L21/306
CPC分类号： H01L21/3003 , H01L21/3221 , Y10S117/906 , Y10S148/003 , Y10S148/022 , Y10S148/024 , Y10S438/909
摘要： The present invention provides a method of manufacturing a semiconductor wafer whereby (1) deterioration of a micro-roughness in a low temperature range in hydrogen atmospheric treatment and increase of resistivity due to outward diffusion of an electrically active impurity in a high temperature range are prevented; (2) in the heat treatment in a hydrogen gas atmosphere, the concentration of gas molecules in the atmosphere, such as water, oxygen and the like, are brought to 5 ppm or less in water molecule conversion; and a reaction is suppressed in which a substrate surface is oxidized unequally and the micro-roughness deteriorates; and (3) the same kind of impurity as the electrically active impurity contained in a Si substrate is mixed into the atmosphere and the outward diffusion of the impurity in the vicinity of the Si substrate surface is prevented to prevent variation of the resistivity.
摘要翻译： PCT No.PCT / JP93 / 00865 Sec。 371日期1994年04月26日 102（e）日期1994年4月26日PCT提交1993年6月25日PCT公布。 出版物WO94 / 00872 日本1994年1月6日。本发明提供一种制造半导体晶片的方法，其中（1）在大气氢处理中的低温范围内的微粗糙度的劣化以及由于电活性杂质的向外扩散引起的电阻率的增加 在高温范围内被防止; （2）在氢气气氛中的热处理中，水分子等氧化物等气氛中的气体分子的浓度在水分子转化率为5ppm以下。 并且抑制基板表面不均匀氧化并且微粗糙度劣化的反应; 和（3）将与Si衬底中含有的电活性杂质相同的杂质混入大气中，并且防止杂质在Si衬底表面附近的向外扩散以防止电阻率的变化。
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