公开(公告)号：US08598013B2

公开(公告)日：2013-12-03

申请号：US12247470

申请日：2008-10-08

申请人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Yoichi Iikubo ,  Yoshiaki Yamamoto ,  Kenichiro Makino

发明人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Yoichi Iikubo ,  Yoshiaki Yamamoto ,  Kenichiro Makino

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： To provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like is used. The semiconductor layer is transferred to a supporting substrate by the steps of irradiating a semiconductor wafer with ions from one surface to form a damaged layer; forming an insulating layer over one surface of the semiconductor wafer; attaching one surface of the supporting substrate to the insulating layer formed over the semiconductor wafer and performing heat treatment to bond the supporting substrate to the semiconductor wafer; and performing separation at the damaged layer into the semiconductor wafer and the supporting substrate. The damaged layer remaining partially over the semiconductor layer is removed by wet etching and a surface of the semiconductor layer is irradiated with a laser beam.

摘要翻译： 为了提供一种制造具有半导体层的SOI衬底的方法，即使使用诸如玻璃衬底等的耐热温度低的衬底也可以实际使用。 通过以下步骤将半导体层转移到支撑衬底：从一个表面照射半导体晶片以形成损伤层; 在所述半导体晶片的一个表面上形成绝缘层; 将所述支撑基板的一个表面附接到形成在所述半导体晶片上的绝缘层，并进行热处理以将所述支撑基板接合到所述半导体晶片; 并且在所述损伤层处进行到所述半导体晶片和所述支撑基板的分离。 通过湿蚀刻除去半导体层上部分残留的损伤层，并用激光束照射半导体层的表面。

公开(公告)号：US08101501B2

公开(公告)日：2012-01-24

申请号：US12240186

申请日：2008-09-29

申请人： Hideto Ohnuma ,  Yoichi Iikubo ,  Shunpei Yamazaki

发明人： Hideto Ohnuma ,  Yoichi Iikubo ,  Shunpei Yamazaki

IPC分类号： H01L21/46

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： To provide a method of manufacturing a semiconductor device, which prevents impurities from entering an SOI substrate. A source gas including one or plural kinds selected from a hydrogen gas, a helium gas, or halogen gas are excited to generate ions, and the ions are added to a bonding substrate to thereby form a fragile layer in the bonding substrate. Then, a region of the bonding substrate that is on and near the surface thereof, i.e., a region ranging from a shallower position than the fragile layer to the surface is removed by etching, polishing, or the like. Next, after attaching the bonding substrate to a base substrate, the bonding substrate is separated at the fragile layer to thereby form a semiconductor film over the base substrate. After forming the semiconductor film over the base substrate, a semiconductor element is formed using the semiconductor film.

摘要翻译： 提供一种防止杂质进入SOI衬底的半导体器件的制造方法。 激发包括选自氢气，氦气或卤素气体中的一种或多种的源气体以产生离子，并将离子加入到接合衬底中，从而在接合衬底中形成脆性层。 然后，通过蚀刻，抛光等除去在其表面上及其附近，即从比脆弱层更浅的位置到表面的区域的接合基板的区域。 接下来，在将接合基板粘贴到基底基板上之后，在脆性层分离接合基板，从而在基底基板上形成半导体膜。 在基底基板上形成半导体膜之后，使用半导体膜形成半导体元件。

公开(公告)号：US08658508B2

公开(公告)日：2014-02-25

申请号：US13411864

申请日：2012-03-05

申请人： Takeshi Shichi ,  Junichi Koezuka ,  Hideto Ohnuma ,  Shunpei Yamazaki

发明人： Takeshi Shichi ,  Junichi Koezuka ,  Hideto Ohnuma ,  Shunpei Yamazaki

IPC分类号： H01L21/33 ,  H01L21/8222

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： The present invention provides a method for manufacturing an SOI substrate, to improve planarity of a surface of a single crystal semiconductor layer after separation by favorably separating a single crystal semiconductor substrate even in the case where a non-mass-separation type ion irradiation method is used, and to improve planarity of a surface of a single crystal semiconductor layer after separation as well as to improve throughput. The method includes the steps of irradiating a single crystal semiconductor substrate with accelerated ions by an ion doping method while the single crystal semiconductor substrate is cooled to form an embrittled region in the single crystal semiconductor substrate; bonding the single crystal semiconductor substrate and a base substrate with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate along the embrittled region to form a single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween.

摘要翻译： 本发明提供一种制造SOI衬底的方法，即使在非质量分离型离子照射方法为非质子分离型离子照射方法的情况下，通过有利地分离单晶半导体衬底来提高分离后的单晶半导体层的表面的平面性 并且在分离之后提高单晶半导体层的表面的平面性以及提高生产量。 该方法包括以下步骤：当单晶半导体衬底被冷却以在单晶半导体衬底中形成脆化区域时，通过离子掺杂方法照射具有加速离子的单晶半导体衬底; 将单晶半导体衬底和基底衬底之间插入绝缘层; 并且沿着脆化区域分离单晶半导体衬底，以在基底衬底上形成绝缘层，形成单晶半导体层。

公开(公告)号：US08558241B2

公开(公告)日：2013-10-15

申请号：US13609915

申请日：2012-09-11

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado ,  Hideto Ohnuma

IPC分类号： H01L27/14

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863 ,  H01L2227/323

摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

公开(公告)号：US08557676B2

公开(公告)日：2013-10-15

申请号：US12986582

申请日：2011-01-07

申请人： Shunpei Yamazaki ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hideto Ohnuma

IPC分类号： H01L21/20

CPC分类号： H01L21/2007 ,  H01L21/76254

摘要： A first substrate of single-crystal silicon within which is formed an embrittled layer and over a surface of which is formed a first insulating film is provided; a second insulating film is formed over a surface of a second substrate; at least one surface of either the first insulating film or the second insulating film is exposed to a plasma atmosphere or an ion atmosphere, and that surface of the first insulating film or the second insulating film is activated; the first substrate and the second substrate are bonded together with the first insulating film and the second insulating film interposed therebetween; a single-crystal silicon film is separated from the first substrate at an interface of the embrittled layer of the first substrate, and a thin film single-crystal silicon film is formed over the second substrate with the first insulating film and the second insulating film interposed therebetween.

摘要翻译： 提供了单晶硅的第一基板，其中形成有脆化层，并且其表面上形成有第一绝缘膜; 在第二基板的表面上形成第二绝缘膜; 第一绝缘膜或第二绝缘膜的至少一个表面暴露于等离子体气氛或离子气氛中，并且第一绝缘膜或第二绝缘膜的表面被激活; 第一基板和第二基板与第一绝缘膜和第二绝缘膜接合在一起; 在第一衬底的脆化层的界面处将单晶硅膜与第一衬底分离，并且在第二衬底上形成薄膜单晶硅膜，其中第一绝缘膜和第二绝缘膜插入 之间。

公开(公告)号：US08518797B2

公开(公告)日：2013-08-27

申请号：US12212990

申请日：2008-09-18

申请人： Hideto Ohnuma ,  Shunpei Yamazaki

发明人： Hideto Ohnuma ,  Shunpei Yamazaki

IPC分类号： H01L21/46

CPC分类号： H01L21/76254

摘要： The method includes steps of adding first ions to a predetermined depth from a main surface of a semiconductor substrate by irradiation of the semiconductor substrate with a planar, linear, or rectangular ion beam, so that a separation layer is formed; adding second ions to part of the separation layer formed in the semiconductor substrate; disposing the main surface of the semiconductor substrate and a main surface of a base substrate to face each other in order to bond a surface of an insulating film and the base substrate; and cleaving the semiconductor substrate using the separation layer as a cleavage plane, so that a single crystal semiconductor layer is formed over the base substrate. The mass number of the second ions is the same as or larger than that of the first ions.

摘要翻译： 该方法包括以下步骤：通过用平面，线性或矩形离子束照射半导体衬底，从半导体衬底的主表面加入第一离子至预定深度，从而形成分离层; 向形成在半导体衬底中的分离层的一部分添加第二离子; 将半导体基板的主表面和基底基板的主表面设置为彼此面对以便将绝缘膜和基底的表面粘合; 并使用分离层将半导体衬底切割为解理面，从而在基底衬底上形成单晶半导体层。 第二离子的质量数与第一离子的质量数相同或者更大。

公开(公告)号：US08409966B2

公开(公告)日：2013-04-02

申请号：US13177584

申请日：2011-07-07

申请人： Hideto Ohnuma ,  Shunpei Yamazaki

发明人： Hideto Ohnuma ,  Shunpei Yamazaki

IPC分类号： H01L21/22 ,  H01L21/38

CPC分类号： H01L21/76254 ,  H01L21/302

摘要： A method is demonstrated to manufacture SOI substrates with high throughput while resources can be effectively used. The present invention is characterized by the feature in which the following process A and process B are repeated. The process A includes irradiation of a surface of a semiconductor wafer with cluster ions to form a separation layer in the semiconductor wafer. The semiconductor wafer and a substrate having an insulating surface are then overlapped with each other and bonded, which is followed by thermal treatment to separate the semiconductor wafer at or around the separation layer. A separation wafer and an SOT substrate which has a crystalline semiconductor layer over the substrate having the insulating surface are simultaneously obtained by the process A. The process B includes treatment of the separation wafer for reusing, which allows the separation wafer to be successively subjected to the process A.

摘要翻译： 一种方法被证明可以制造具有高产量的SOI衬底，同时可以有效地利用资源。 本发明的特征在于重复以下处理A和方法B. 方法A包括用聚簇离子照射半导体晶片的表面以在半导体晶片中形成分离层。 然后将半导体晶片和具有绝缘表面的基板彼此重叠并结合，然后进行热处理以在分离层处或周围分离半导体晶片。 通过方法A同时获得在具有绝缘表面的基板上具有结晶半导体层的分离晶片和SOT基板。工艺B包括处理用于再利用的分离晶片，其允许分离晶片连续地经受 过程A.

公开(公告)号：US08236630B2

公开(公告)日：2012-08-07

申请号：US12230331

申请日：2008-08-27

申请人： Hideto Ohnuma ,  Shunpei Yamazaki

发明人： Hideto Ohnuma ,  Shunpei Yamazaki

IPC分类号： H01L21/00 ,  H01L21/30

CPC分类号： H01L21/84 ,  H01L27/12 ,  H01L29/045

摘要： An embrittlement layer is formed in a single crystal semiconductor substrate having a (110) plane as a main surface by irradiation of the main surface with ions, and an insulating layer is formed over the main surface of the single crystal semiconductor substrate. The insulating layer and a substrate having an insulating surface are bonded, and the single crystal semiconductor substrate is separated along the embrittlement layer to provide a single crystal semiconductor layer having the (110) plane as a main surface over the substrate having the insulating surface. Then, an n-channel transistor and a p-channel transistor are formed so as to each have a axis of the single crystal semiconductor layer in a channel length direction.

摘要翻译： 在具有（110）面作为主表面的单晶半导体衬底中，通过用离子照射主表面，形成脆化层，并且在单晶半导体衬底的主表面上形成绝缘层。 绝缘层和具有绝缘表面的基板接合，并且沿着脆化层分离单晶半导体基板，以在具有绝缘表面的基板上提供具有（110）面作为主表面的单晶半导体层。 然后，形成n沟道晶体管和p沟道晶体管，使其在沟道长度方向上各自具有单晶半导体层的<110'轴。

公开(公告)号：US08119490B2

公开(公告)日：2012-02-21

申请号：US12352176

申请日：2009-01-12

申请人： Hideto Ohnuma ,  Shunpei Yamazaki

发明人： Hideto Ohnuma ,  Shunpei Yamazaki

IPC分类号： H01L21/331

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： A semiconductor substrate and a base substrate made from an insulator are prepared; an oxide film containing a chlorine atom is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form an embrittled region at a predetermined depth from a surface of the semiconductor substrate; plasma treatment of the oxide film is performed by applying a bias voltage; a surface of the semiconductor substrate and a surface of the base substrate are disposed opposite to each other to bond a surface of the oxide film and the surface of the base substrate to each other; and heat treatment is performed to cause separation along the embrittled region after bonding the surface of the oxide film and the surface of the base substrate to each other, thereby forming a semiconductor film over the base substrate with the oxide film interposed therebetween.

摘要翻译： 制备由绝缘体制成的半导体衬底和基底衬底; 在半导体衬底上形成含有氯原子的氧化膜; 半导体衬底通过氧化膜被加速的离子照射，以在半导体衬底的表面形成预定深度的脆化区域; 通过施加偏置电压来进行氧化膜的等离子体处理; 半导体衬底的表面和基底衬底的表面彼此相对设置，以将氧化物膜的表面和基底衬底的表面彼此粘合; 并且在将氧化膜的表面和基板的表面彼此接合之后，进行热处理以使脆化区域分离，从而在基底基板上形成半导体膜，氧化膜插入其间。

公开(公告)号：US07902041B2

公开(公告)日：2011-03-08

申请号：US12546719

申请日：2009-08-25

申请人： Shunpei Yamazaki ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hideto Ohnuma

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/30 ,  H01L21/46 ,  H01L21/04

CPC分类号： H01L27/1266 ,  H01L21/3081 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： An object is to provide a method for manufacturing, with high yield, a semiconductor device having a crystalline semiconductor layer even if a substrate with low upper temperature limit. A groove is formed in a part of a semiconductor substrate to form a semiconductor substrate that has a projecting portion, and a bonding layer is formed to cover the projecting portion. In addition, before the bonding layer is formed, a portion of the semiconductor substrate to be the projecting portion is irradiated with accelerated ions to form a brittle layer. After the bonding layer and the supporting substrate are bonded together, heat treatment for separation of the semiconductor substrate is performed to provide a semiconductor layer over the supporting substrate. The semiconductor layer is selectively etched, and a semiconductor element is formed and a semiconductor device is manufactured.

摘要翻译： 本发明的目的是提供一种制造具有晶体半导体层的半导体器件的高产率的方法，即使是具有低的上限极限的衬底。 在半导体衬底的一部分中形成沟槽以形成具有突出部分的半导体衬底，并且形成接合层以覆盖突出部分。 此外，在形成接合层之前，用加速离子照射作为突出部分的半导体衬底的一部分以形成脆性层。 在接合层和支撑基板接合在一起之后，进行用于分离半导体衬底的热处理，以在支撑衬底上提供半导体层。 选择性地蚀刻半导体层，形成半导体元件并制造半导体器件。