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1.发明授权Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode 失效在半导体激光二极管和半导体激光二极管中形成沟槽的方法
公开(公告)号：US5920767A
公开(公告)日：1999-07-06
申请号：US681017
申请日：1996-07-22
CPC分类号： H01L33/0062 , H01S5/2231 , H01S5/209 , H01S5/2206 , H01S5/2209 , H01S5/2275
摘要： The disclosure describes a method of forming a groove in a structure of a semiconductor laser diode, which comprises a crystal growth procedure of epitaxial growth of a core layer comprising MP, wherein M represents one or more of elements belonging to group IIIb of periodic table and an upper layer comprising MAs, wherein M represents one or more of elements belonging to group IIIb of periodic table, successively on (100) surface of MAs crystals in a lower layer comprising MAs; a photolithography and wet etching procedure of, after forming an etching mask on the upper layer, forming an etching window to the etching mask; a first etching procedure of selective etching the upper layer; and a second etching procedure of selective etching other faces except for the face in which (111) face of MP crystals in the core layer is exposed.
摘要翻译： 本发明描述了一种在半导体激光二极管的结构中形成凹槽的方法，其包括包含MP的芯层的外延生长的晶体生长过程，其中M表示属于周期表第IIIb族的元素中的一种或多种， 包含MAs的上层，其中M表示属于元素周期表IIIb族的元素中的一种或多种，在包含MA的下层中的MAs晶体的（100）表面上依次连续; 在上层形成蚀刻掩模之后，在蚀刻掩模上形成蚀刻窗口的光刻和湿蚀刻步骤; 选择性蚀刻上层的第一蚀刻步骤; 以及除了芯层中的MP晶体的（111）面露出的面以外的其它面的选择性蚀刻的第二蚀刻工序。
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2.发明授权
公开(公告)号：US5566198A
公开(公告)日：1996-10-15
申请号：US380836
申请日：1995-01-30
CPC分类号： H01L33/0062 , H01S5/2231 , H01S5/209 , H01S5/2206 , H01S5/2209 , H01S5/2275
摘要： The disclosure describes a method of forming a groove in a structure of a semiconductor laser diode, which comprises a crystal growth procedure of epitaxial growth of a core layer comprising MP, wherein M represents one or more of elements belonging to group IIIb of periodic table and an upper layer comprising MAs, wherein M represents one or more of elements belonging to group IIIb of periodic table, successively on (100) surface of MAs crystals in a lower layer comprising MAs; a photolithography and wet etching procedure of, after forming an etching mask on the upper layer, forming an etching window to the etching mask; a first etching procedure of selective etching the upper layer; and a second etching procedure of selective etching other faces except for the face in which (111) face of MP crystals in the core layer is exposed.
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公开(公告)号：US06172998B2
公开(公告)日：2001-01-09
申请号：US08971719
申请日：1997-11-17
申请人： Hideyoshi Horie , Toshinari Fujimori , Satoru Nagao , Hideki Goto
发明人： Hideyoshi Horie , Toshinari Fujimori , Satoru Nagao , Hideki Goto
IPC分类号： H01S319
CPC分类号： B82Y20/00 , H01S5/204 , H01S5/222 , H01S5/2231 , H01S5/34313 , H01S5/3432
摘要： The present invention relates to a semiconductor laser diode comprising a GaAs substrate and at least a first conduction-type clad layer, an active layer containing In, Ga and As as component elements, a second conduction-type first clad layer, a current block layer and a second conduction-type second clad layer which are deposited on the substrate in order, wherein a current injection region is formed by said current block layer and said second conduction-type second clad layer, the effective refractive index step &Dgr;neff in the horizontal direction is from 2.5×10−3 to 5.0×10−3 at the emission wavelength, and the width W of the current injection region is from 1.5 to 2.5 &mgr;m. The semiconductor laser diode of the present invention is suited for uses where high output and long life-time are required, such as excitation light source for optical fiber amplifiers.
摘要翻译： 本发明涉及包括GaAs衬底和至少第一导电型覆盖层的半导体激光二极管，包含In，Ga和As作为元件的有源层，第二导电型第一覆盖层，电流阻挡层 和第二导电型第二包覆层，其顺序淀积在所述衬底上，其中由所述电流阻挡层和所述第二导电型第二覆盖层形成电流注入区域，在水平方向上的有效折射率梯度DELTAneff 在发射波长处为2.5×10 -3〜5.0×10 -3，电流注入区域的宽度W为1.5〜2.5μm。 本发明的半导体激光二极管适用于需要高输出和长使用寿命的用途，例如用于光纤放大器的激发光源。
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公开(公告)号：US20060038185A1
公开(公告)日：2006-02-23
申请号：US11253547
申请日：2005-10-20
IPC分类号： H01L33/00
CPC分类号： H01L33/0045 , H01S5/16 , H01S5/2018 , H01S5/2027 , H01S5/2231 , H01S5/3202 , H01S5/3211 , H01S2301/173
摘要： A light emitting device including a substrate transparent at the emission wavelength and an active layer structure formed on such substrate, in which the thickness of the substrate is 75 μm or less, and/or a layer for suppressing spectral-intensity-modulation due to the substrate-mode is provided between the substrate and the active layer structure. Such device can suppress the spectral-intensity-modulation due to the substrate-mode, which is observed for the case the substrate is transparent at the emission wavelength, to thereby provide a light emission device excellent in linearity of the current-light output characteristics, and to thereby improve the coupling characteristics with an external cavity.
摘要翻译： 一种发光器件，其包括在发射波长处透明的衬底和形成在该衬底上的有源层结构，其中衬底的厚度为75μm或更小，和/或用于抑制由于衬底的光谱强度调制而导致的层 衬底模式设置在衬底和有源层结构之间。 这样的装置可以抑制由于基板在发光波长下透明的情况下的基板模式导致的光谱强度调制，从而提供当前光输出特性的线性优异的发光装置， 从而提高与外部空腔的耦合特性。
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公开(公告)号：US5838028A
公开(公告)日：1998-11-17
申请号：US861640
申请日：1997-05-22
IPC分类号： H01L21/306 , H01L33/02 , H01L33/14 , H01L33/30 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/32 , H01S5/323 , H01S3/19 , H01L31/0336 , H01L31/072 , H01L31/038
CPC分类号： H01S5/2231 , H01L21/30612 , H01L33/02 , H01L33/145 , H01L33/30 , H01S5/204 , H01S5/209 , H01S5/222 , H01S5/2275 , H01S5/3211 , H01S5/32316
摘要： The invention provides a semiconductor device having a structure wherein a layer comprising at least Al.sub.W Ga.sub.1-W As is formed on a substrate and a second etching stop layer, a first etching stop layer and a layer comprising Al.sub.Y Ga.sub.1-Y As are deposited on the layer comprising Al.sub.W Ga.sub.1-W As in the described order, with a portion of the layer comprising Al.sub.Y G.sub.1-Y As and a portion of the first etching stop layer being removed. This structure enables a desired ridge shape to be fabricated with good quality and allows for free selection of the Al mixed crystal ratio of the layer to be etched, and makes it possible to form the re-growth interface of GaAs. Thus, the qualty of crystal of the re-grown portion can be improved.
摘要翻译： 本发明提供了一种半导体器件，其结构是将至少包含AlWGa1-WAs的层形成在衬底上，并且第二蚀刻停止层，第一蚀刻停止层和包含AlYGa1-YAs的层沉积在包含AlWGa1-WAs的层上， 所述顺序的WAs，其中包含AlYG1-YAs的层的一部分和第一蚀刻停止层的一部分被去除。 该结构能够以良好的质量制造所需的脊形，并允许自由选择待蚀刻层的Al混晶比，并且可以形成GaAs的再生长界面。 因此，可以提高再生长部分的晶体的质量。
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公开(公告)号：US5608751A
公开(公告)日：1997-03-04
申请号：US209963
申请日：1994-03-14
CPC分类号： H01S5/2231 , H01S5/0211 , H01S5/2207 , H01S5/221 , H01S5/222 , H01S5/32325
摘要： The disclosure describes a laser diode comprising a Group III-V compound single-crystal substrate of first conduction type; a first cladding layer of first conduction type composed of (Al.sub.m Ga.sub.1-m).sub.n In.sub.1-n P (0.3.ltoreq.m.ltoreq.1 and 0.3.ltoreq.n.ltoreq.0.75) and formed on said single-crystal substrate; an active layer composed of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0.ltoreq.x.ltoreq.0.5 and 0.3.ltoreq.y.ltoreq.0.75) and formed on said first cladding layer; a second cladding layer of second conduction type composed of (Al.sub.m Ga.sub.1-m).sub.n In.sub.1-n P (0.3.ltoreq.m.ltoreq.1 and 0.3.ltoreq.n.ltoreq.0.75) and formed on said active layer and having a ridge; and a current blocking layer composed of Al.sub.u Ga.sub.1-u As.sub.v P.sub.1-v, (0.ltoreq.u.ltoreq.1 and 0.ltoreq.v.ltoreq.1) and so formed as to contact the lateral side of the ridge of said second cladding layer,(1) each refractive index of the first and second cladding layers being smaller than that of the active layer and (2) the refractive index of the current blocking layer being smaller than that of the second cladding layer.
摘要翻译： 本公开描述了一种包括第一导电类型的III-V族化合物单晶衬底的激光二极管; 由（AlmGa1-m）nIn1-nP（0.3≤n≤1,0.3≤n≤0.75）组成的第一导电类型的第一包层，形成在所述单晶衬底上; 形成在所述第一包层上的由（Al x Ga 1-x）y In 1-y P（0≤x≤0.5,0.3≤y≤0.75）组成的有源层; 由（AlmGa1-m）nIn1-nP（0.3≤n≤1,0.3≤n≤0.75）构成并形成在所述有源层上并具有脊的第二导电类型的第二包层; 和由AluGa1-uAsvP1-v组成的电流阻挡层，其形成为接触所述第二包层的脊的横向侧面 层，（1）第一和第二包覆层的每个折射率小于有源层的折射率，和（2）电流阻挡层的折射率小于第二覆层的折射率。
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公开(公告)号：US07102174B2
公开(公告)日：2006-09-05
申请号：US09860828
申请日：2001-05-21
IPC分类号： H10L33/00
CPC分类号： H01L33/0045 , H01S5/16 , H01S5/2018 , H01S5/2027 , H01S5/2231 , H01S5/3202 , H01S5/3211 , H01S2301/173
摘要： The present invention discloses a light emitting device comprising a substrate transparent at the emission wavelength and an active layer structure formed on such substrate, in which the thickness of the substrate is 75 μm or less, and/or a layer for suppressing spectral-intensity-modulation due to the substrate-mode is provided between the substrate and the active layer structure. Such device can suppress the spectral-intensity modulation due to the substrate-mode, which is observed for the case the substrate is transparent at the emission wavelength, to thereby provide a light emission device excellent in linearity of the current-light output characteristics, and to thereby improve the coupling characteristics with an external cavity.
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公开(公告)号：US07164157B2
公开(公告)日：2007-01-16
申请号：US11253547
申请日：2005-10-20
IPC分类号： H01L33/00
CPC分类号： H01L33/0045 , H01S5/16 , H01S5/2018 , H01S5/2027 , H01S5/2231 , H01S5/3202 , H01S5/3211 , H01S2301/173
摘要： A light emitting device including a substrate transparent at the emission wavelength and an active layer structure formed on such substrate, in which the thickness of the substrate is 75 μm or less, and/or a layer for suppressing spectral-intensity-modulation due to the substrate-mode is provided between the substrate and the active layer structure. Such device can suppress the spectral-intensity-modulation due to the substrate-mode, which is observed for the case the substrate is transparent at the emission wavelength, to thereby provide a light emission device excellent in linearity of the current-light output characteristics, and to thereby improve the coupling characteristics with an external cavity.
摘要翻译： 一种发光器件，其包括在发射波长处透明的衬底和形成在该衬底上的有源层结构，其中衬底的厚度为75μm或更小，和/或用于抑制由于衬底的光谱强度调制而导致的层 衬底模式设置在衬底和有源层结构之间。 这样的装置可以抑制由于基板在发光波长下透明的情况下的基板模式导致的光谱强度调制，从而提供当前光输出特性的线性优异的发光装置， 从而提高与外部空腔的耦合特性。
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公开(公告)号：US6023483A
公开(公告)日：2000-02-08
申请号：US48183
申请日：1998-03-26
申请人： Kenji Shimoyama , Katsushi Fujii , Satoru Nagao , Hideki Goto
发明人： Kenji Shimoyama , Katsushi Fujii , Satoru Nagao , Hideki Goto
CPC分类号： H01S5/2231 , H01S5/223
摘要： A semiconductor light-emitting device comprising a substrate having thereon: a first conductive type first clad layer; an active layer; a second conductive type first clad layer having a stripe region to which a current is injected and the remaining region; a ridge portion comprising: a ridge-shape second conductive type second clad layer formed on the stripe region of the second conductive type first clad layer; a second conductive type contact layer formed on the ridge-shape second conductive type second clad layer; and a protective film formed on the second conductive type first clad layer to cover the remaining region thereof, wherein a part of the second conductive type second clad layer is formed on said protective film, or wherein said contact layer is formed on a substantially whole surface area of said second conductive type second clad layer, or wherein said ridge portion has no protective layer on the side surface thereof.
摘要翻译： 一种半导体发光器件，包括其上具有的衬底：第一导电型第一覆盖层; 活性层 第二导电型第一包层，其具有注入电流的条带区域和剩余区域; 脊部，包括：形成在所述第二导电型第一包层的条带区域上的脊形第二导电型第二包层; 形成在所述脊状第二导电型第二包覆层上的第二导电型接触层; 以及形成在所述第二导电型第一覆盖层上以覆盖其剩余区域的保护膜，其中所述第二导电型第二覆盖层的一部分形成在所述保护膜上，或者其中所述接触层形成在基本上整个表面上 所述第二导电型第二包覆层的面积，或者其中所述脊部在其侧表面上没有保护层。
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公开(公告)号：US06639926B1
公开(公告)日：2003-10-28
申请号：US09274767
申请日：1999-03-24
申请人： Kenji Shimoyama , Satoru Nagao , Katsushi Fujii , Hideki Goto
发明人： Kenji Shimoyama , Satoru Nagao , Katsushi Fujii , Hideki Goto
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0658 , H01S5/2231 , H01S5/2272 , H01S5/3202 , H01S5/3206 , H01S5/34326
摘要： A semiconductor light-emitting device comprising a substrate having a surface having an off-angle to a crystallographic plane of low-degree surface orientation, the substrate having thereon: compound semiconductor layers including an active layer; a selective growth protective film formed on the compound semiconductor layers and having an opening at the region corresponding to a stripe region to which a current is injected; and a ridge-shaped compound semiconductor layer formed to cover the opening. This semiconductor light-emitting device with stable laser property can be manufactured in a simplified way.
摘要翻译： 一种半导体发光器件，包括具有与低度表面取向的结晶面偏离的表面的基板，所述基板上具有：包含有源层的化合物半导体层; 在所述化合物半导体层上形成的选择性生长保护膜，并且在与注入电流的条纹区域对应的区域具有开口部; 以及形成为覆盖开口的脊状化合物半导体层。 这种具有稳定的激光特性的半导体发光器件可以简单地制造。
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