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    Semiconductor light-emitting device
    1.
    发明授权
    Semiconductor light-emitting device 失效
    半导体发光装置

    公开(公告)号：US6023483A

    公开(公告)日：2000-02-08

    申请号：US48183

    申请日：1998-03-26

    申请人： Kenji Shimoyama ,  Katsushi Fujii ,  Satoru Nagao ,  Hideki Goto

    发明人： Kenji Shimoyama ,  Katsushi Fujii ,  Satoru Nagao ,  Hideki Goto

    IPC分类号： H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/2231 ,  H01S5/223

    摘要： A semiconductor light-emitting device comprising a substrate having thereon: a first conductive type first clad layer; an active layer; a second conductive type first clad layer having a stripe region to which a current is injected and the remaining region; a ridge portion comprising: a ridge-shape second conductive type second clad layer formed on the stripe region of the second conductive type first clad layer; a second conductive type contact layer formed on the ridge-shape second conductive type second clad layer; and a protective film formed on the second conductive type first clad layer to cover the remaining region thereof, wherein a part of the second conductive type second clad layer is formed on said protective film, or wherein said contact layer is formed on a substantially whole surface area of said second conductive type second clad layer, or wherein said ridge portion has no protective layer on the side surface thereof.

    摘要翻译： 一种半导体发光器件，包括其上具有的衬底：第一导电型第一覆盖层; 活性层 第二导电型第一包层，其具有注入电流的条带区域和剩余区域; 脊部，包括：形成在所述第二导电型第一包层的条带区域上的脊形第二导电型第二包层; 形成在所述脊状第二导电型第二包覆层上的第二导电型接触层; 以及形成在所述第二导电型第一覆盖层上以覆盖其剩余区域的保护膜，其中所述第二导电型第二覆盖层的一部分形成在所述保护膜上，或者其中所述接触层形成在基本上整个表面上 所述第二导电型第二包覆层的面积，或者其中所述脊部在其侧表面上没有保护层。

    Semiconductor light-emitting device
    2.
    发明授权
    Semiconductor light-emitting device 失效
    半导体发光装置

    公开(公告)号：US06639926B1

    公开(公告)日：2003-10-28

    申请号：US09274767

    申请日：1999-03-24

    申请人： Kenji Shimoyama ,  Satoru Nagao ,  Katsushi Fujii ,  Hideki Goto

    发明人： Kenji Shimoyama ,  Satoru Nagao ,  Katsushi Fujii ,  Hideki Goto

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/0658 ,  H01S5/2231 ,  H01S5/2272 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/34326

    摘要： A semiconductor light-emitting device comprising a substrate having a surface having an off-angle to a crystallographic plane of low-degree surface orientation, the substrate having thereon: compound semiconductor layers including an active layer; a selective growth protective film formed on the compound semiconductor layers and having an opening at the region corresponding to a stripe region to which a current is injected; and a ridge-shaped compound semiconductor layer formed to cover the opening. This semiconductor light-emitting device with stable laser property can be manufactured in a simplified way.

    摘要翻译： 一种半导体发光器件，包括具有与低度表面取向的结晶面偏离的表面的基板，所述基板上具有：包含有源层的化合物半导体层; 在所述化合物半导体层上形成的选择性生长保护膜，并且在与注入电流的条纹区域对应的区域具有开口部; 以及形成为覆盖开口的脊状化合物半导体层。 这种具有稳定的激光特性的半导体发光器件可以简单地制造。

    Method of preparing compound semiconductor
    3.
    发明授权
    Method of preparing compound semiconductor 失效
    制备化合物半导体的方法

    公开(公告)号：US5622559A

    公开(公告)日：1997-04-22

    申请号：US69728

    申请日：1993-06-01

    申请人： Hideki Goto ,  Katsushi Fujii ,  Kenji Shimoyama

    发明人： Hideki Goto ,  Katsushi Fujii ,  Kenji Shimoyama

    IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  C30B25/00

    CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639

    摘要： The vapor phase growth method of the group III-V compound semiconductor thin-film, using hydrides and organic metals containing no halogen elements as a raw material for the growth, is disclosed. The method is carried out by alternately introducing group III organic metals raw material gas as well as halides gas and/or halogens gas into a growth chamber, and also by repeating the introducing to grow a thin-film. In accordance with the present invention, it is possible to obtain such high-quality crystal growth as the planarization of hetero junction interface, the improvement of surface morphology or facet, and no deposit of polycrystals on the mask in a wide range.

    摘要翻译： 公开了使用不含卤素元素的氢化物和有机金属作为生长原料的III-V族化合物半导体薄膜的气相生长方法。 该方法通过将III族有机金属原料气体以及卤化物气体和/或卤素气体交替地引入生长室中，并且还通过重复引入以生长薄膜来进行。 根据本发明，可以获得如异质结界面的平面化，表面形态或小面的改善以及在宽范围内在掩模上沉积多晶体的高质量晶体生长。

    Semiconductor light-emitting devices
    4.
    发明授权
    Semiconductor light-emitting devices 失效
    半导体发光器件

    公开(公告)号：US06278137B1

    公开(公告)日：2001-08-21

    申请号：US09035333

    申请日：1998-03-05

    申请人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Katsushi Fujii ,  Atsunori Yamauchi ,  Hideki Gotoh ,  Yoshihito Sato

    发明人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Katsushi Fujii ,  Atsunori Yamauchi ,  Hideki Gotoh ,  Yoshihito Sato

    IPC分类号： H01L3300

    CPC分类号： H01L33/30 ,  H01S5/3211 ,  H01S5/32325

    摘要： The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 &mgr;m to 100 &mgr;m.

    摘要翻译： 本发明提供一种半导体发光器件，包括：第一覆盖层，包括第一导电类型的AlGaAsP化合物，位于第一覆盖层旁边的第二覆盖层，包括第一导电型AlGaInP化合物， 高达0.5μm的有源层，位于第二覆盖层的旁边并且包括第一或第二导电型AlGaInP或GaInP，位于有源层旁边的第三覆盖层包括第二导电类型的AlGaInP 并且具有高达0.5μm的厚度，以及位于第三覆盖层旁边并且包括第二导电型AlGaAsP化合物的第四覆盖层和/或包含第二导电型AlGaP的光提取层 或GaP，并且具有1μm至100μm的厚度。

    Semiconductor light-emitting device and manufacturing method for the same
    5.
    发明授权
    Semiconductor light-emitting device and manufacturing method for the same 失效
    半导体发光器件及其制造方法

    公开(公告)号：US06387721B1

    公开(公告)日：2002-05-14

    申请号：US09404376

    申请日：1999-09-24

    申请人： Makiko Hashimoto ,  Nobuyuki Hosoi ,  Kenji Shimoyama ,  Katsushi Fujii ,  Yoshihito Sato ,  Kazumasa Kiyomi

    发明人： Makiko Hashimoto ,  Nobuyuki Hosoi ,  Kenji Shimoyama ,  Katsushi Fujii ,  Yoshihito Sato ,  Kazumasa Kiyomi

    IPC分类号： H01L2100

    CPC分类号： H01S5/2231 ,  H01S5/0202 ,  H01S5/0658 ,  H01S5/2272 ,  H01S5/3213

    摘要： In a semiconductor light-emitting device including a substrate, a first compound semiconductor layer including an active layer formed on the substrate, a second compound semiconductor layer of a ridge type formed on the first compound semiconductor layer, and a protective film formed above the first compound semiconductor layer on both sides of the second compound semiconductor layer, the disclosed semiconductor light-emitting device has a current blocking layer formed above the first compound semiconductor layer outside the protective film. This semiconductor light-emitting device is with a high production yield since readily cleaved and assembled, with adequately squeezed currents, and with, when assembled in the junction-down type, a high output and a longer life span.

    摘要翻译： 在包括衬底的半导体发光器件中，包括形成在衬底上的有源层的第一化合物半导体层，形成在第一化合物半导体层上的脊状的第二化合物半导体层和形成在第一化合物半导体层上的保护膜 化合物半导体层在第二化合物半导体层的两侧，所公开的半导体发光器件具有形成在保护膜外部的第一化合物半导体层上方的电流阻挡层。 这种半导体发光器件由于容易地被切割和组装而具有高的产量，具有适当的挤压电流，并且当在结合型组装时具有高输出和更长的寿命。

    Semiconductor light-emitting devices
    6.
    发明授权
    Semiconductor light-emitting devices 失效
    半导体发光器件

    公开(公告)号：US5811839A

    公开(公告)日：1998-09-22

    申请号：US521980

    申请日：1995-08-31

    申请人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Katsushi Fujii ,  Atsunori Yamauchi ,  Hideki Gotoh ,  Yoshihito Sato

    发明人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Katsushi Fujii ,  Atsunori Yamauchi ,  Hideki Gotoh ,  Yoshihito Sato

    IPC分类号： H01L33/30 ,  H01S5/32 ,  H01S5/323 ,  H01L33/00 ,  H01S3/19

    CPC分类号： H01L33/30 ,  H01S5/32325 ,  H01S5/3211

    摘要： The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 .mu.m to 100 .mu.m.

    摘要翻译： 本发明提供一种半导体发光器件，包括：第一覆盖层，包括第一导电类型的AlGaAsP化合物，位于第一覆盖层旁边的第二覆盖层，包括第一导电型AlGaInP化合物， 高达0.5μm的有源层，位于第二覆层旁边并且包括第一或第二导电型AlGaInP或GaInP，位于有源层旁边的第三覆盖层包括第二导电类型 AlGaInP化合物，并且具有至多0.5μm的厚度，以及位于第三覆盖层旁边并包括第二导电型AlGaAsP化合物的第四覆盖层和/或包含第二导电类型的光提取层 型AlGaP或GaP，并且具有1μm至100μm的厚度。

    Semiconductor light-emitting device
    7.
    发明授权
    Semiconductor light-emitting device 失效
    半导体发光装置

    公开(公告)号：US06707071B2

    公开(公告)日：2004-03-16

    申请号：US10096508

    申请日：2002-03-13

    申请人： Makiko Hashimoto ,  Nobuyuki Hosoi ,  Kenji Shimoyama ,  Katsushi Fujii ,  Yoshihito Sato ,  Kazumasa Kiyomi

    发明人： Makiko Hashimoto ,  Nobuyuki Hosoi ,  Kenji Shimoyama ,  Katsushi Fujii ,  Yoshihito Sato ,  Kazumasa Kiyomi

    IPC分类号： H01L3300

    CPC分类号： H01S5/2231 ,  H01S5/0202 ,  H01S5/0658 ,  H01S5/2272 ,  H01S5/3213

    摘要： In a semiconductor light-emitting device including a substrate, a first compound semiconductor layer including an active layer formed on the substrate, a second compound semiconductor layer of a ridge type formed on the first compound semiconductor layer, and a protective film formed above the first compound semiconductor layer on both sides of the second compound semiconductor layer, the disclosed semiconductor light-emitting device has a current blocking layer formed above the first compound semiconductor layer outside the protective film. This semiconductor light-emitting device is with a high production yield since readily cleaved and assembled, with adequately squeezed currents, and with, when assembled in the junction-down type, a high output and a longer life span.

    摘要翻译： 在包括衬底的半导体发光器件中，包括形成在衬底上的有源层的第一化合物半导体层，形成在第一化合物半导体层上的脊状的第二化合物半导体层和形成在第一化合物半导体层上的保护膜 化合物半导体层在第二化合物半导体层的两侧，所公开的半导体发光器件具有形成在保护膜外部的第一化合物半导体层上方的电流阻挡层。 这种半导体发光器件由于容易地被切割和组装而具有高的产量，具有适当的挤压电流，并且当在结合型组装时具有高输出和更长的寿命。