公开(公告)号：US06639926B1

公开(公告)日：2003-10-28

申请号：US09274767

申请日：1999-03-24

申请人： Kenji Shimoyama ,  Satoru Nagao ,  Katsushi Fujii ,  Hideki Goto

发明人： Kenji Shimoyama ,  Satoru Nagao ,  Katsushi Fujii ,  Hideki Goto

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/0658 ,  H01S5/2231 ,  H01S5/2272 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/34326

摘要： A semiconductor light-emitting device comprising a substrate having a surface having an off-angle to a crystallographic plane of low-degree surface orientation, the substrate having thereon: compound semiconductor layers including an active layer; a selective growth protective film formed on the compound semiconductor layers and having an opening at the region corresponding to a stripe region to which a current is injected; and a ridge-shaped compound semiconductor layer formed to cover the opening. This semiconductor light-emitting device with stable laser property can be manufactured in a simplified way.

摘要翻译： 一种半导体发光器件，包括具有与低度表面取向的结晶面偏离的表面的基板，所述基板上具有：包含有源层的化合物半导体层; 在所述化合物半导体层上形成的选择性生长保护膜，并且在与注入电流的条纹区域对应的区域具有开口部; 以及形成为覆盖开口的脊状化合物半导体层。 这种具有稳定的激光特性的半导体发光器件可以简单地制造。

公开(公告)号：US6023483A

公开(公告)日：2000-02-08

申请号：US48183

申请日：1998-03-26

申请人： Kenji Shimoyama ,  Katsushi Fujii ,  Satoru Nagao ,  Hideki Goto

发明人： Kenji Shimoyama ,  Katsushi Fujii ,  Satoru Nagao ,  Hideki Goto

IPC分类号： H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/223

摘要： A semiconductor light-emitting device comprising a substrate having thereon: a first conductive type first clad layer; an active layer; a second conductive type first clad layer having a stripe region to which a current is injected and the remaining region; a ridge portion comprising: a ridge-shape second conductive type second clad layer formed on the stripe region of the second conductive type first clad layer; a second conductive type contact layer formed on the ridge-shape second conductive type second clad layer; and a protective film formed on the second conductive type first clad layer to cover the remaining region thereof, wherein a part of the second conductive type second clad layer is formed on said protective film, or wherein said contact layer is formed on a substantially whole surface area of said second conductive type second clad layer, or wherein said ridge portion has no protective layer on the side surface thereof.

摘要翻译： 一种半导体发光器件，包括其上具有的衬底：第一导电型第一覆盖层; 活性层 第二导电型第一包层，其具有注入电流的条带区域和剩余区域; 脊部，包括：形成在所述第二导电型第一包层的条带区域上的脊形第二导电型第二包层; 形成在所述脊状第二导电型第二包覆层上的第二导电型接触层; 以及形成在所述第二导电型第一覆盖层上以覆盖其剩余区域的保护膜，其中所述第二导电型第二覆盖层的一部分形成在所述保护膜上，或者其中所述接触层形成在基本上整个表面上 所述第二导电型第二包覆层的面积，或者其中所述脊部在其侧表面上没有保护层。

公开(公告)号：US5622559A

公开(公告)日：1997-04-22

申请号：US69728

申请日：1993-06-01

申请人： Hideki Goto ,  Katsushi Fujii ,  Kenji Shimoyama

发明人： Hideki Goto ,  Katsushi Fujii ,  Kenji Shimoyama

IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  C30B25/00

CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639

摘要： The vapor phase growth method of the group III-V compound semiconductor thin-film, using hydrides and organic metals containing no halogen elements as a raw material for the growth, is disclosed. The method is carried out by alternately introducing group III organic metals raw material gas as well as halides gas and/or halogens gas into a growth chamber, and also by repeating the introducing to grow a thin-film. In accordance with the present invention, it is possible to obtain such high-quality crystal growth as the planarization of hetero junction interface, the improvement of surface morphology or facet, and no deposit of polycrystals on the mask in a wide range.

摘要翻译： 公开了使用不含卤素元素的氢化物和有机金属作为生长原料的III-V族化合物半导体薄膜的气相生长方法。 该方法通过将III族有机金属原料气体以及卤化物气体和/或卤素气体交替地引入生长室中，并且还通过重复引入以生长薄膜来进行。 根据本发明，可以获得如异质结界面的平面化，表面形态或小面的改善以及在宽范围内在掩模上沉积多晶体的高质量晶体生长。

公开(公告)号：US5400740A

公开(公告)日：1995-03-28

申请号：US069729

申请日：1993-06-01

申请人： Hideki Goto ,  Kenji Shimoyama

发明人： Hideki Goto ,  Kenji Shimoyama

IPC分类号： H01L21/205 ,  H01L21/306 ,  H01L21/20

CPC分类号： H01L21/02019 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/30621

摘要： A method of preparing a compound semiconductor is carried out, by introducing the group III organic metals gas and/or the hydrides containing group V elements, or group V organic metals gas into a growth chamber, in addition to a carrier gas and an etching gas, in a method of preparing a group III-V compound semiconductor including the process to effect the gas etching of a single crystal sustrate surface and/or a single crystal thin-film surface in the growth chamber, just before a vapor phase growth of a compound semiconductor thin-film is performed, using the hydrides and the organic metals gas.According to the present invention, the impurity pollution, the oxide film, the thermometamorphism and the hike, in an interface between the single crystal substrate and the epitaxial layer as well as in the regrown interface can be removed, thereby making it possible to get a clean surface of the interface and to restrain the accumulation or the depletion of carrier-concentration which has not been intended. As a result, the quality of the device can be greatly improved as compared with that of the one obtained by a usual preparing method.

摘要翻译： 通过将III族有机金属气体和/或含有V族元素的氢化物或V族有机金属气体引入生长室，除了载气和蚀刻气体之外，还可以进行化合物半导体的制备方法 在制备III-V族化合物半导体的方法中，包括在生长室内的单晶生长表面和/或单晶薄膜表面进行气相蚀刻的工艺，恰好在气相生长之前 使用氢化物​​和有机金属气体进行化合物半导体薄膜。 根据本发明，可以除去单晶衬底和外延层之间以及再生界面中的界面中的杂质污染，氧化膜，热变质作用和高温变形，从而可以获得 清洁界面的表面，并抑制未预期的载流子浓度的累积或耗尽。 结果，与通过通常的制备方法获得的装置相比，可以大大提高装置的质量。

公开(公告)号：US5355384A

公开(公告)日：1994-10-11

申请号：US128579

申请日：1993-09-29

申请人： Yuichi Inoue ,  Kenji Shimoyama ,  Itaru Sakamoto ,  Hideki Goto

发明人： Yuichi Inoue ,  Kenji Shimoyama ,  Itaru Sakamoto ,  Hideki Goto

IPC分类号： H01S5/00 ,  H01S3/11 ,  H01S5/20 ,  H01S5/223 ,  H01S5/227 ,  H01S3/19

CPC分类号： H01S5/227 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2081 ,  H01S5/223 ,  H01S5/2275

摘要： Disclosed herein is a semiconductor laser element comprising a first cladding layer, an optical guiding layer, an active layer and a second cladding layer disposed in this order or in reverse order on a semiconductor substrate, a refractive index of the optical guiding layer being larger than both refractive indexes of the first and second cladding layers, and a refractive index of the optical guiding layer is smaller than that of the active layer but larger than that of the first cladding layer, and a burying layer having a refractive index smaller than that of at least one of the first and second cladding layers being disposed on side faces other than laser-emitting faces of the optical guiding layer and the active layer.

摘要翻译： 本发明公开了一种半导体激光器元件，其包括在半导体基板上以该顺序或相反次序设置的第一包层，光导层，有源层和第二包层，光导层的折射率大于 第一和第二包覆层的折射率以及光导层的折射率都小于有源层的折射率，但是比第一覆盖层的折射率大，但是比第一覆盖层的折射率小的折射率的掩埋层， 第一和第二包层中的至少一个设置在除了光导层和有源层的激光发射面以外的侧面上。

公开(公告)号：US5868834A

公开(公告)日：1999-02-09

申请号：US876228

申请日：1997-06-16

申请人： Kenji Shimoyama ,  Toshinari Fujimori ,  Hideki Goto

发明人： Kenji Shimoyama ,  Toshinari Fujimori ,  Hideki Goto

IPC分类号： C30B25/00 ,  C30B25/02 ,  H01L21/36 ,  H01L21/365 ,  H01S5/347

CPC分类号： B82Y20/00 ,  C23C16/306 ,  C23C16/45527 ,  C30B25/165 ,  C30B29/48 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02551 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/0262 ,  H01S5/347 ,  H01L21/02507 ,  H01S2304/04 ,  H01S5/3018

摘要： The disclosure describes a method of manufacturing a Group II-VI compound semiconductor thin film by a vapor-phase epitaxy using an organic metal compound of Group II element and a hydride or an organic metal compound of Group VI element as the raw material, which comprises repeating alternate introduction of an organic metal compound of Group II element and a halide gas, a halogen gas or a mixture thereof; or adding a halide gas, a halogen gas or a mixture thereof to a gas for vapor-phase epitaxy.

摘要翻译： 本公开内容描述了使用II族元素的有机金属化合物和VI族元素的氢化物或有机金属化合物作为原料，通过气相外延制备II-VI族化合物半导体薄膜的方法，其包括 重复交替引入第II族元素和卤化物气体的有机金属化合物，卤素气体或其混合物; 或将卤化物气体，卤素气体或其混合物添加到用于气相外延的气体中。

公开(公告)号：US5606180A

公开(公告)日：1997-02-25

申请号：US299994

申请日：1994-09-01

申请人： Nobuyuki Hosoi ,  Kenji Shimoyama ,  Hideki Goto

发明人： Nobuyuki Hosoi ,  Kenji Shimoyama ,  Hideki Goto

IPC分类号： C30B25/02 ,  H01L29/205 ,  H01L33/30 ,  H01S5/323 ,  H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/30 ,  C30B25/02 ,  C30B29/40 ,  H01L29/205 ,  H01S5/32325

摘要： The invention includes a Group III-V compound semiconductor that comprises (1) a thin crystal film of A.sub.1.sup.III As.sub.w P.sub.1-w, wherein A.sub.1.sup.III represents a Group III element with Al composition of less than 0.3, 0.5

摘要翻译： 本发明包括III-V族化合物半导体，其包括（1）AlIIIAswP1-w的薄晶膜，其中AlIII表示Al组成小于0.3，0.5 的III族元素 在基板上，形成BIIIAs的薄晶膜，其中BIII表示在A2IIIAsuP1-u膜上形成的Al组成不小于0.45的III族元素，以及C2IIIAszP1-z的薄膜，其中C2III表示III族 元素，0 ，形成在BIIIAs膜上。

公开(公告)号：US06172998B2

公开(公告)日：2001-01-09

申请号：US08971719

申请日：1997-11-17

申请人： Hideyoshi Horie ,  Toshinari Fujimori ,  Satoru Nagao ,  Hideki Goto

发明人： Hideyoshi Horie ,  Toshinari Fujimori ,  Satoru Nagao ,  Hideki Goto

IPC分类号： H01S319

CPC分类号： B82Y20/00 ,  H01S5/204 ,  H01S5/222 ,  H01S5/2231 ,  H01S5/34313 ,  H01S5/3432

摘要： The present invention relates to a semiconductor laser diode comprising a GaAs substrate and at least a first conduction-type clad layer, an active layer containing In, Ga and As as component elements, a second conduction-type first clad layer, a current block layer and a second conduction-type second clad layer which are deposited on the substrate in order, wherein a current injection region is formed by said current block layer and said second conduction-type second clad layer, the effective refractive index step &Dgr;neff in the horizontal direction is from 2.5×10−3 to 5.0×10−3 at the emission wavelength, and the width W of the current injection region is from 1.5 to 2.5 &mgr;m. The semiconductor laser diode of the present invention is suited for uses where high output and long life-time are required, such as excitation light source for optical fiber amplifiers.

摘要翻译： 本发明涉及包括GaAs衬底和至少第一导电型覆盖层的半导体激光二极管，包含In，Ga和As作为元件的有源层，第二导电型第一覆盖层，电流阻挡层 和第二导电型第二包覆层，其顺序淀积在所述衬底上，其中由所述电流阻挡层和所述第二导电型第二覆盖层形成电流注入区域，在水平方向上的有效折射率梯度DELTAneff 在发射波长处为2.5×10 -3〜5.0×10 -3，电流注入区域的宽度W为1.5〜2.5μm。 本发明的半导体激光二极管适用于需要高输出和长使用寿命的用途，例如用于光纤放大器的激发光源。

公开(公告)号：US5566198A

公开(公告)日：1996-10-15

申请号：US380836

申请日：1995-01-30

申请人： Hideyoshi Horie ,  Toshinari Fujimori ,  Satoru Nagao ,  Nobuyuki Hosoi ,  Hideki Goto

发明人： Hideyoshi Horie ,  Toshinari Fujimori ,  Satoru Nagao ,  Nobuyuki Hosoi ,  Hideki Goto

IPC分类号： H01L33/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S3/18

CPC分类号： H01L33/0062 ,  H01S5/2231 ,  H01S5/209 ,  H01S5/2206 ,  H01S5/2209 ,  H01S5/2275

摘要： The disclosure describes a method of forming a groove in a structure of a semiconductor laser diode, which comprises a crystal growth procedure of epitaxial growth of a core layer comprising MP, wherein M represents one or more of elements belonging to group IIIb of periodic table and an upper layer comprising MAs, wherein M represents one or more of elements belonging to group IIIb of periodic table, successively on (100) surface of MAs crystals in a lower layer comprising MAs; a photolithography and wet etching procedure of, after forming an etching mask on the upper layer, forming an etching window to the etching mask; a first etching procedure of selective etching the upper layer; and a second etching procedure of selective etching other faces except for the face in which (111) face of MP crystals in the core layer is exposed.

公开(公告)号：US5920767A

公开(公告)日：1999-07-06

申请号：US681017

申请日：1996-07-22

申请人： Hideyoshi Horie ,  Toshinari Fujimori ,  Satoru Nagao ,  Nobuyuki Hosoi ,  Hideki Goto

发明人： Hideyoshi Horie ,  Toshinari Fujimori ,  Satoru Nagao ,  Nobuyuki Hosoi ,  Hideki Goto

IPC分类号： H01L33/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01L21/00

CPC分类号： H01L33/0062 ,  H01S5/2231 ,  H01S5/209 ,  H01S5/2206 ,  H01S5/2209 ,  H01S5/2275

摘要： The disclosure describes a method of forming a groove in a structure of a semiconductor laser diode, which comprises a crystal growth procedure of epitaxial growth of a core layer comprising MP, wherein M represents one or more of elements belonging to group IIIb of periodic table and an upper layer comprising MAs, wherein M represents one or more of elements belonging to group IIIb of periodic table, successively on (100) surface of MAs crystals in a lower layer comprising MAs; a photolithography and wet etching procedure of, after forming an etching mask on the upper layer, forming an etching window to the etching mask; a first etching procedure of selective etching the upper layer; and a second etching procedure of selective etching other faces except for the face in which (111) face of MP crystals in the core layer is exposed.

摘要翻译： 本发明描述了一种在半导体激光二极管的结构中形成凹槽的方法，其包括包含MP的芯层的外延生长的晶体生长过程，其中M表示属于周期表第IIIb族的元素中的一种或多种， 包含MAs的上层，其中M表示属于元素周期表IIIb族的元素中的一种或多种，​​在包含MA的下层中的MAs晶体的（100）表面上依次连续; 在上层形成蚀刻掩模之后，在蚀刻掩模上形成蚀刻窗口的光刻和湿蚀刻步骤; 选择性蚀刻上层的第一蚀刻步骤; 以及除了芯层中的MP晶体的（111）面露出的面以外的其它面的选择性蚀刻的第二蚀刻工序。