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公开(公告)号：US07102174B2
公开(公告)日：2006-09-05
申请号：US09860828
申请日：2001-05-21
IPC分类号： H10L33/00
CPC分类号： H01L33/0045 , H01S5/16 , H01S5/2018 , H01S5/2027 , H01S5/2231 , H01S5/3202 , H01S5/3211 , H01S2301/173
摘要： The present invention discloses a light emitting device comprising a substrate transparent at the emission wavelength and an active layer structure formed on such substrate, in which the thickness of the substrate is 75 μm or less, and/or a layer for suppressing spectral-intensity-modulation due to the substrate-mode is provided between the substrate and the active layer structure. Such device can suppress the spectral-intensity modulation due to the substrate-mode, which is observed for the case the substrate is transparent at the emission wavelength, to thereby provide a light emission device excellent in linearity of the current-light output characteristics, and to thereby improve the coupling characteristics with an external cavity.
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2.发明授权公开(公告)号：US06744074B2
公开(公告)日：2004-06-01
申请号：US09968802
申请日：2001-10-03
IPC分类号： H01L3300
CPC分类号： H01L33/44 , B82Y20/00 , H01L33/0045 , H01S5/0021 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/16 , H01S5/162 , H01S5/164 , H01S5/3054 , H01S5/3086 , H01S5/34313 , H01S5/34353
摘要： Compound semiconductor light emitting devices capable of suppressing the surface state density on the facets of semiconductor light emitting devices such as semiconductor lasers for a long time and stable operating even when the passivation layer diffuses can be easily obtained. Compound semiconductor light emitting devices with an emission wavelength of &lgr; (nm) wherein a first conduction type of clad layer, an active layer and a second conduction type of clad layer are grown on a substrate and two facets are opposite to each other so as to form a cavity, characterized in that said active layer is transparent to the emission wavelength in the vicinities of the facets and that the surfaces of the first conduction type of clad layer, active layer and second conduction type of clad layer forming said facets are each coated with a passivation layer.
摘要翻译： 即使钝化层扩散，也能够长时间地抑制半导体激光器等半导体发光元件的面的表面状态密度，即使钝化层扩散也能够稳定地工作的化合物半导体发光元件。 发光波长为λ（nm）的化合物半导体发光器件，其中在衬底上生长第一导电类型的包层，有源层和第二导电类型的包层，并且两个面彼此相对，从而 形成空腔，其特征在于，所述有源层对于小面附近的发射波长是透明的，并且形成所述小面的第一导电类型的包覆层，有源层和第二导电类型的覆盖层的表面各自被涂覆 具有钝化层。
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公开(公告)号：US06677618B1
公开(公告)日：2004-01-13
申请号：US09453279
申请日：1999-12-03
IPC分类号： H01L3300
CPC分类号： H01L33/44 , H01L33/30 , H01S5/0282
摘要： Disclosed compound semiconductor light emitting devices have a substrate, a compound semiconductor layer, formed on the substrate, containing a first conductive type clad layer, an active layer, and a second conductive type clad layer, and a resonator structure formed of two opposing facets of the compound semiconductor layer, wherein surfaces of the first conductive type clad layer, the active layer, and the second conductive type clad layer forming the facet of the compound semiconductor are covered with a passivation layer, wherein at least one element constituting the facet of the compound semiconductor layer is not coupled to oxygen, and wherein a portion of the passivation layer adjacent to the facet of the compound semiconductor layer contains oxygen as a structural element. The compound semiconductor light emitting devices according to the invention can stably suppress, for a long time, the surface state densities on the facets occurring on extrinsic causes, and are high performance devices with establishing both of a high output and a long lifetime.
摘要翻译： 公开的化合物半导体发光器件具有形成在基板上的基板，化合物半导体层，其包含第一导电型覆盖层，有源层和第二导电型覆盖层，以及由两个相对的面 化合物半导体层，其中形成化合物半导体的面的第一导电型覆盖层，有源层和第二导电型覆盖层的表面被钝化层覆盖，其中至少一个元件构成 化合物半导体层不与氧结合，并且其中与化合物半导体层的小面相邻的钝化层的一部分含有氧作为结构元素。 根据本发明的化合物半导体发光器件可以长期稳定地抑制在外在原因上产生的面上的表面状态密度，并且是具有高输出和长寿命两者的高性能器件。
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4.发明授权公开(公告)号：US06323052B1
公开(公告)日：2001-11-27
申请号：US09095884
申请日：1998-06-11
IPC分类号： H01L2100
CPC分类号： H01L33/44 , B82Y20/00 , H01L33/0045 , H01S5/0021 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/16 , H01S5/162 , H01S5/164 , H01S5/3054 , H01S5/3086 , H01S5/34313 , H01S5/34353
摘要： Compound semiconductor light emitting devices capable of suppressing the surface state density on the facets of semiconductor light emitting devices such as semiconductor lasers for a long time and stable operating even when the passivation layer diffuses can be easily obtained. Compound semiconductor light emitting devices with an emission wavelength of &lgr; (nm) wherein a first conduction type of clad layer, an active layer and a second conduction type of clad layer are grown on a substrate and two facets are opposite to each other so as to form a cavity, characterized in that said active layer is transparent to the emission wavelength in the vicinities of the facets and that the surfaces of the first conduction type of clad layer, active layer and second conduction type of clad layer forming said facets are each coated with a passivation layer.
摘要翻译： 即使钝化层扩散，也能够长时间地抑制半导体激光器等半导体发光元件的面的表面状态密度，即使钝化层扩散也能够稳定地工作的化合物半导体发光元件。 发光波长为兰姆（nm）的化合物半导体发光器件，其中在衬底上生长第一导电类型的包层，有源层和第二导电类型的包层，并且两个面彼此相对，从而 形成空腔，其特征在于，所述有源层对于小面附近的发射波长是透明的，并且形成所述小面的第一导电类型的包覆层，有源层和第二导电类型的覆盖层的表面各自被涂覆 具有钝化层。
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公开(公告)号：US06172998B2
公开(公告)日：2001-01-09
申请号：US08971719
申请日：1997-11-17
申请人： Hideyoshi Horie , Toshinari Fujimori , Satoru Nagao , Hideki Goto
发明人： Hideyoshi Horie , Toshinari Fujimori , Satoru Nagao , Hideki Goto
IPC分类号： H01S319
CPC分类号： B82Y20/00 , H01S5/204 , H01S5/222 , H01S5/2231 , H01S5/34313 , H01S5/3432
摘要： The present invention relates to a semiconductor laser diode comprising a GaAs substrate and at least a first conduction-type clad layer, an active layer containing In, Ga and As as component elements, a second conduction-type first clad layer, a current block layer and a second conduction-type second clad layer which are deposited on the substrate in order, wherein a current injection region is formed by said current block layer and said second conduction-type second clad layer, the effective refractive index step &Dgr;neff in the horizontal direction is from 2.5×10−3 to 5.0×10−3 at the emission wavelength, and the width W of the current injection region is from 1.5 to 2.5 &mgr;m. The semiconductor laser diode of the present invention is suited for uses where high output and long life-time are required, such as excitation light source for optical fiber amplifiers.
摘要翻译： 本发明涉及包括GaAs衬底和至少第一导电型覆盖层的半导体激光二极管，包含In，Ga和As作为元件的有源层，第二导电型第一覆盖层，电流阻挡层 和第二导电型第二包覆层，其顺序淀积在所述衬底上，其中由所述电流阻挡层和所述第二导电型第二覆盖层形成电流注入区域，在水平方向上的有效折射率梯度DELTAneff 在发射波长处为2.5×10 -3〜5.0×10 -3，电流注入区域的宽度W为1.5〜2.5μm。 本发明的半导体激光二极管适用于需要高输出和长使用寿命的用途，例如用于光纤放大器的激发光源。
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6.发明授权
公开(公告)号：US5566198A
公开(公告)日：1996-10-15
申请号：US380836
申请日：1995-01-30
CPC分类号： H01L33/0062 , H01S5/2231 , H01S5/209 , H01S5/2206 , H01S5/2209 , H01S5/2275
摘要： The disclosure describes a method of forming a groove in a structure of a semiconductor laser diode, which comprises a crystal growth procedure of epitaxial growth of a core layer comprising MP, wherein M represents one or more of elements belonging to group IIIb of periodic table and an upper layer comprising MAs, wherein M represents one or more of elements belonging to group IIIb of periodic table, successively on (100) surface of MAs crystals in a lower layer comprising MAs; a photolithography and wet etching procedure of, after forming an etching mask on the upper layer, forming an etching window to the etching mask; a first etching procedure of selective etching the upper layer; and a second etching procedure of selective etching other faces except for the face in which (111) face of MP crystals in the core layer is exposed.
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7.发明授权Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode 失效在半导体激光二极管和半导体激光二极管中形成沟槽的方法
公开(公告)号：US5920767A
公开(公告)日：1999-07-06
申请号：US681017
申请日：1996-07-22
CPC分类号： H01L33/0062 , H01S5/2231 , H01S5/209 , H01S5/2206 , H01S5/2209 , H01S5/2275
摘要： The disclosure describes a method of forming a groove in a structure of a semiconductor laser diode, which comprises a crystal growth procedure of epitaxial growth of a core layer comprising MP, wherein M represents one or more of elements belonging to group IIIb of periodic table and an upper layer comprising MAs, wherein M represents one or more of elements belonging to group IIIb of periodic table, successively on (100) surface of MAs crystals in a lower layer comprising MAs; a photolithography and wet etching procedure of, after forming an etching mask on the upper layer, forming an etching window to the etching mask; a first etching procedure of selective etching the upper layer; and a second etching procedure of selective etching other faces except for the face in which (111) face of MP crystals in the core layer is exposed.
摘要翻译： 本发明描述了一种在半导体激光二极管的结构中形成凹槽的方法，其包括包含MP的芯层的外延生长的晶体生长过程，其中M表示属于周期表第IIIb族的元素中的一种或多种， 包含MAs的上层，其中M表示属于元素周期表IIIb族的元素中的一种或多种，在包含MA的下层中的MAs晶体的（100）表面上依次连续; 在上层形成蚀刻掩模之后，在蚀刻掩模上形成蚀刻窗口的光刻和湿蚀刻步骤; 选择性蚀刻上层的第一蚀刻步骤; 以及除了芯层中的MP晶体的（111）面露出的面以外的其它面的选择性蚀刻的第二蚀刻工序。
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公开(公告)号：US5868834A
公开(公告)日：1999-02-09
申请号：US876228
申请日：1997-06-16
申请人： Kenji Shimoyama , Toshinari Fujimori , Hideki Goto
发明人： Kenji Shimoyama , Toshinari Fujimori , Hideki Goto
IPC分类号： C30B25/00 , C30B25/02 , H01L21/36 , H01L21/365 , H01S5/347
CPC分类号： B82Y20/00 , C23C16/306 , C23C16/45527 , C30B25/165 , C30B29/48 , H01L21/02395 , H01L21/02463 , H01L21/02551 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/0262 , H01S5/347 , H01L21/02507 , H01S2304/04 , H01S5/3018
摘要： The disclosure describes a method of manufacturing a Group II-VI compound semiconductor thin film by a vapor-phase epitaxy using an organic metal compound of Group II element and a hydride or an organic metal compound of Group VI element as the raw material, which comprises repeating alternate introduction of an organic metal compound of Group II element and a halide gas, a halogen gas or a mixture thereof; or adding a halide gas, a halogen gas or a mixture thereof to a gas for vapor-phase epitaxy.
摘要翻译： 本公开内容描述了使用II族元素的有机金属化合物和VI族元素的氢化物或有机金属化合物作为原料，通过气相外延制备II-VI族化合物半导体薄膜的方法，其包括 重复交替引入第II族元素和卤化物气体的有机金属化合物，卤素气体或其混合物; 或将卤化物气体，卤素气体或其混合物添加到用于气相外延的气体中。
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公开(公告)号：US5608751A
公开(公告)日：1997-03-04
申请号：US209963
申请日：1994-03-14
CPC分类号： H01S5/2231 , H01S5/0211 , H01S5/2207 , H01S5/221 , H01S5/222 , H01S5/32325
摘要： The disclosure describes a laser diode comprising a Group III-V compound single-crystal substrate of first conduction type; a first cladding layer of first conduction type composed of (Al.sub.m Ga.sub.1-m).sub.n In.sub.1-n P (0.3.ltoreq.m.ltoreq.1 and 0.3.ltoreq.n.ltoreq.0.75) and formed on said single-crystal substrate; an active layer composed of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0.ltoreq.x.ltoreq.0.5 and 0.3.ltoreq.y.ltoreq.0.75) and formed on said first cladding layer; a second cladding layer of second conduction type composed of (Al.sub.m Ga.sub.1-m).sub.n In.sub.1-n P (0.3.ltoreq.m.ltoreq.1 and 0.3.ltoreq.n.ltoreq.0.75) and formed on said active layer and having a ridge; and a current blocking layer composed of Al.sub.u Ga.sub.1-u As.sub.v P.sub.1-v, (0.ltoreq.u.ltoreq.1 and 0.ltoreq.v.ltoreq.1) and so formed as to contact the lateral side of the ridge of said second cladding layer,(1) each refractive index of the first and second cladding layers being smaller than that of the active layer and (2) the refractive index of the current blocking layer being smaller than that of the second cladding layer.
摘要翻译： 本公开描述了一种包括第一导电类型的III-V族化合物单晶衬底的激光二极管; 由（AlmGa1-m）nIn1-nP（0.3≤n≤1,0.3≤n≤0.75）组成的第一导电类型的第一包层，形成在所述单晶衬底上; 形成在所述第一包层上的由（Al x Ga 1-x）y In 1-y P（0≤x≤0.5,0.3≤y≤0.75）组成的有源层; 由（AlmGa1-m）nIn1-nP（0.3≤n≤1,0.3≤n≤0.75）构成并形成在所述有源层上并具有脊的第二导电类型的第二包层; 和由AluGa1-uAsvP1-v组成的电流阻挡层，其形成为接触所述第二包层的脊的横向侧面 层，（1）第一和第二包覆层的每个折射率小于有源层的折射率，和（2）电流阻挡层的折射率小于第二覆层的折射率。
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公开(公告)号：US07164157B2
公开(公告)日：2007-01-16
申请号：US11253547
申请日：2005-10-20
IPC分类号： H01L33/00
CPC分类号： H01L33/0045 , H01S5/16 , H01S5/2018 , H01S5/2027 , H01S5/2231 , H01S5/3202 , H01S5/3211 , H01S2301/173
摘要： A light emitting device including a substrate transparent at the emission wavelength and an active layer structure formed on such substrate, in which the thickness of the substrate is 75 μm or less, and/or a layer for suppressing spectral-intensity-modulation due to the substrate-mode is provided between the substrate and the active layer structure. Such device can suppress the spectral-intensity-modulation due to the substrate-mode, which is observed for the case the substrate is transparent at the emission wavelength, to thereby provide a light emission device excellent in linearity of the current-light output characteristics, and to thereby improve the coupling characteristics with an external cavity.
摘要翻译： 一种发光器件，其包括在发射波长处透明的衬底和形成在该衬底上的有源层结构，其中衬底的厚度为75μm或更小，和/或用于抑制由于衬底的光谱强度调制而导致的层 衬底模式设置在衬底和有源层结构之间。 这样的装置可以抑制由于基板在发光波长下透明的情况下的基板模式导致的光谱强度调制，从而提供当前光输出特性的线性优异的发光装置， 从而提高与外部空腔的耦合特性。
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