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    Core structure of stator transformer for rotary transformer
    3.
    发明申请
    Core structure of stator transformer for rotary transformer 审中-公开
    旋转变压器定子变压器的核心结构

    公开(公告)号：US20050217107A1

    公开(公告)日：2005-10-06

    申请号：US11146156

    申请日：2005-06-07

    申请人： Mutsumi Matsuura ,  Hiroyuki Naganuma

    发明人： Mutsumi Matsuura ,  Hiroyuki Naganuma

    IPC分类号： H01F38/14 ,  H01F27/04 ,  H01F38/18 ,  H01F5/00

    CPC分类号： H01F38/18 ,  H01F27/04 ,  Y10T29/49105

    摘要： A stator transformer is composed of a concave metal ring formed by drawing a metal plate produced by pressing, and a planer metal plate formed by pressing. The concave metal ring has a bottom having a through hole in which a rotor is to be disposed, and a side formed upstanding at the bottom. The side has a circular or elliptic guide hole for guiding a lead wire connected to a stator transformer coil to the outside. The metal plate has the through hole in which the rotor is to be disposed. The concave metal ring has therein the stator transformer coil wound around a bobbin. The metal plate and the end of the side of the concave metal ring, which is formed upstanding at the bottom, are integrated with each other by, for example, welding or force-fitting.

    摘要翻译： 定子变压器由通过拉压由压制制成的金属板形成的凹金属环和通过压制形成的刨床金属板构成。 凹金属环具有底部，该底部具有设置有转子的通孔，在底部形成为直立的一侧。 该侧面具有用于将连接到定子变压器线圈的引线引导到外部的圆形或椭圆形导向孔。 金属板具有设置转子的通孔。 该凹金属环内有定子变压器线圈缠绕在线轴上。 通过例如焊接或力配合，金属板和在底部形成的直立的凹金属环的一侧的端部彼此一体化。

    SUBSTRATE FOR CELL CULTURE
    5.
    发明申请
    SUBSTRATE FOR CELL CULTURE 审中-公开
    细胞培养基质

    公开(公告)号：US20080009063A1

    公开(公告)日：2008-01-10

    申请号：US11773127

    申请日：2007-07-03

    申请人： Teruo Okano ,  Masayuki Yamato ,  Yoshikatsu Akiyama ,  Masanao Watanabe ,  Hiroyuki Naganuma ,  Masami Nara

    发明人： Teruo Okano ,  Masayuki Yamato ,  Yoshikatsu Akiyama ,  Masanao Watanabe ,  Hiroyuki Naganuma ,  Masami Nara

    IPC分类号： C12N5/02

    CPC分类号： C12N5/0068 ,  C12M25/00 ,  C12M25/06 ,  C12N2533/30 ,  C12N2535/00 ,  C12N2535/10 ,  C12N2539/10

    摘要： An object of the present invention is to provide a cell culture substrate capable of quickly forming a cell sheet and easily removing the cell sheet after formed. The present invention relates to a cell culture substrate for forming a cell sheet by culturing cells, comprising a plurality of projections each having a top face and depressions formed between the projections, in which the depressions each have an opening whose dimensions are too small for a cell to be cultured to enter and the cell sheet is removable. The present invention further relates to a method of preparing a cell sheet using the substrate and a cell sheet prepared by the method.

    摘要翻译： 本发明的目的是提供能够快速形成细胞片并且容易地除去细胞片的细胞培养基材。 本发明涉及用于通过培养细胞形成细胞片的细胞培养基质，所述细胞培养基底包括多个突起，每个突起具有顶表面和在所述突起之间形成的凹陷，其中所述凹陷各自具有尺寸对于 要培养的细胞进入，细胞片是可移除的。 本发明还涉及使用该基材制备细胞片的方法和通过该方法制备的细胞片。

    Semiconductor device and method for fabricating the same
    6.
    发明授权
    Semiconductor device and method for fabricating the same 失效
    半导体装置及其制造方法

    公开(公告)号：US06277718B1

    公开(公告)日：2001-08-21

    申请号：US09047522

    申请日：1998-03-25

    申请人： Hiroyuki Naganuma ,  Shinji Sugatani

    发明人： Hiroyuki Naganuma ,  Shinji Sugatani

    IPC分类号： H01L213205

    CPC分类号： H01L21/28211 ,  H01L21/28176 ,  H01L21/31629 ,  Y10S438/91

    摘要： The method for fabricating a semiconductor device comprises an insulation film forming step of forming an insulation film 12 on a semiconductor substrate 10, a semiconductor layer forming step of forming a semiconductor layer 14 on the insulation film 12, and an impurity implanting step of implanting an impurity containing hydrogen into the semiconductor layer 14, the method being characterized by further comprising a fluorine implanting step of implanting fluorine in at least the insulation film 12. The dangling bonds of the insulation film can be bonded with the fluorine, whereby the fluorine, which has higher bonding energy with respect to silicon of the insulation film than hydrogen, is never dissociated from the silicon of the insulation film in the following heat treatments, BT stress test, etc. Accordingly, an interface state density in the interface between the insulation film and the semiconductor substrate can be depressed low, and a fixed charge in the insulation film can be depressed small. The semiconductor device and the method for fabricating the same can be reliable. The fluorine ion dose is suitably set to thereby prevent the insulation film from thickening. The method for fabricating a semiconductor device having good electric characteristics can be provided.

    摘要翻译： 半导体器件的制造方法包括在半导体衬底10上形成绝缘膜12的绝缘膜形成步骤，在绝缘膜12上形成半导体层14的半导体层形成步骤以及植入 含有氢的杂质进入半导体层14，该方法的特征在于还包括在至少绝缘膜12中注入氟的氟注入步骤。绝缘膜的悬挂键可以与氟键合，由此氟 相对于绝缘膜的硅相对于氢具有更高的结合能，在以下热处理，BT应力测试等中绝不会从绝缘膜的硅离解。因此，绝缘膜之间的界面中的界面态密度 并且半导体衬底可以被低压，并且可以在绝缘膜中固定电荷 郁闷的小。 半导体器件及其制造方法可以是可靠的。 适当设定氟离子剂量，防止绝缘膜变厚。 可以提供具有良好电特性的半导体器件的制造方法。

    Optical recording medium
    7.
    发明授权
    Optical recording medium 有权
    光记录介质

    公开(公告)号：US06277461B1

    公开(公告)日：2001-08-21

    申请号：US09331732

    申请日：1999-06-24

    申请人： Hiroyuki Naganuma ,  Naoki Shimada

    发明人： Hiroyuki Naganuma ,  Naoki Shimada

    IPC分类号： B32B302

    CPC分类号： G11B7/252 ,  B41M5/52 ,  G06K19/06046 ,  G06K19/07 ,  G06K19/08 ,  G11B7/24 ,  G11B7/2534 ,  G11B7/2542 ,  G11B7/256 ,  G11B23/0014 ,  G11B23/30 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/21

    摘要： There is provided an optical recording medium provided with at least an optical recording layer, further comprising a cured layer provided on/over outer surface of the optical recording layer and a receiving layer provided on at least a part of the cured layer. It is possible to provide an optical recording medium which allows post-processing such as printing on the cured layer which has been very difficult to be carried out so far, without degrading the reliability of the information of the optical recording medium.

    摘要翻译： 提供了至少设置有光学记录层的光学记录介质，还包括设置在光学记录层的外表面上的固化层和设置在固化层的至少一部分上的接收层。 可以提供一种光学记录介质，其允许诸如在固化层上的印刷的后处理，这在迄今为止非常难以执行，而不降低光学记录介质的信息的可靠性。