公开(公告)号：US08171355B2

公开(公告)日：2012-05-01

申请号：US11490017

申请日：2006-07-21

申请人： Hiroaki Kameyama ,  Yuichi Satou ,  Takehiko Fujiyama ,  Yuuichi Terui ,  Kaname Yoshida

发明人： Hiroaki Kameyama ,  Yuichi Satou ,  Takehiko Fujiyama ,  Yuuichi Terui ,  Kaname Yoshida

IPC分类号： H03M13/35

CPC分类号： H04L47/10 ,  H04L47/26 ,  H04L47/38

摘要： Disclosed is a communication system that transmits data through a transmission path between a transmission side apparatus and a reception side apparatus, wherein the transmission side apparatus comprises a coding apparatus that creates redundantly-coded data from original data; a transmitting apparatus that sends the coded data coded by the coding unit to the transmission path; and a coding rate determining apparatus that sets and controls a coding rate in the coding unit, wherein the reception side apparatus comprises a receiving apparatus that receives the coded data sent through the transmission path; a decoding apparatus that decodes the original data from the coded data received; and a loss rate estimating apparatus that measures the loss rate on the path of the coded data sent, and wherein the coding rate determining apparatus of the transmission side apparatus varies and controls the coding rate in the coding apparatus based on the loss rate obtained.

摘要翻译： 公开了一种通过发送侧装置和接收侧装置之间的传输路径发送数据的通信系统，其中发送侧装置包括从原始数据创建冗余编码数据的编码装置; 发送装置，将由编码单元编码的编码数据发送到发送路径; 以及编码率决定装置，其对编码单位中的编码率进行设定和控制，其中，所述接收侧装置包括：接收装置，其接收通过所述传输路径发送的编码数据; 从接收到的编码数据解码原始数据的解码装置; 以及损失率估计装置，其测量发送的编码数据的路径上的损耗率，并且其中发送侧装置的编码率确定装置根据所获得的损失率改变和控制编码装置中的编码率。

公开(公告)号：US20070260850A1

公开(公告)日：2007-11-08

申请号：US11490017

申请日：2006-07-21

申请人： Hiroaki Kameyama ,  Yuichi Satou ,  Takehiko Fujiyama ,  Yuuichi Terui ,  Kaname Yoshida

发明人： Hiroaki Kameyama ,  Yuichi Satou ,  Takehiko Fujiyama ,  Yuuichi Terui ,  Kaname Yoshida

IPC分类号： G06F9/30

CPC分类号： H04L47/10 ,  H04L47/26 ,  H04L47/38

摘要： Disclosed is a communication system that transmits data through a transmission path between a transmission side apparatus and a reception side apparatus, wherein the transmission side apparatus comprises a coding apparatus that creates redundantly-coded data from original data; a transmitting apparatus that sends the coded data coded by the coding unit to the transmission path; and a coding rate determining apparatus that sets and controls a coding rate in the coding unit, wherein the reception side apparatus comprises a receiving apparatus that receives the coded data sent through the transmission path; a decoding apparatus that decodes the original data from the coded data received; and a loss rate estimating apparatus that measures the loss rate on the path of the coded data sent, and wherein the coding rate determining apparatus of the transmission side apparatus varies and controls the coding rate in the coding apparatus based on the loss rate obtained.

摘要翻译： 公开了一种通过发送侧装置和接收侧装置之间的传输路径发送数据的通信系统，其中发送侧装置包括从原始数据创建冗余编码数据的编码装置; 发送装置，将由编码单元编码的编码数据发送到发送路径; 以及编码率决定装置，其对编码单位中的编码率进行设定和控制，其中，所述接收侧装置包括：接收装置，其接收通过所述传输路径发送的编码数据; 从接收到的编码数据解码原始数据的解码装置; 以及损失率估计装置，其测量发送的编码数据的路径上的损耗率，并且其中发送侧装置的编码率确定装置根据所获得的损失率改变和控制编码装置中的编码率。

公开(公告)号：US20070253548A1

公开(公告)日：2007-11-01

申请号：US11512336

申请日：2006-08-30

申请人： Hiroaki Kameyama ,  Yuichi Satou ,  Shinichi Sazawa

发明人： Hiroaki Kameyama ,  Yuichi Satou ,  Shinichi Sazawa

IPC分类号： H04L9/28 ,  H04L9/00 ,  H04K1/06 ,  G06F12/14 ,  H04K1/00 ,  H04K1/04 ,  H04L9/32 ,  G06F11/30

CPC分类号： G06F21/6218

摘要： The data dividing unit divides data into n pieces. An encoding unit generates m pieces of encoded data composed of a set of a bitmap matrix specifying a plurality pieces of divided data for obtaining exclusive OR (XOR) and exclusive OR data including exclusive OR of the plurality pieces of divided data specified by the bitmap matrix, wherein m is equal to or more than a dividing number n and according to redundancy. A distributed saving unit distributes and saves the m pieces of encoded data to and in storage devices at two or more locations and m or less locations. A decoding unit restores the original data by retrieving restorable k or more pieces of the encoded data among the distributed and saved m pieces of encoded data and subjecting the bitmap matrix of the retrieved encoded data to conversion into a unit matrix.

摘要翻译： 数据分割单元将数据分成n个。 编码单元生成由一组位图矩阵组成的m个编码数据，该位图矩阵指定用于获得异或（XOR）的多条分割数据，以及包括由位图矩阵指定的多条分割数据的异或的异或数据 其中m等于或大于除数n并根据冗余。 分布式存储单元将m个编码数据分配并存储在两个或更多个位置和m个或更少位置处的存储设备中并存储在存储设备中。 解码单元通过在分布和保存的m个编码数据中检索可恢复的k个或更多个编码数据来恢复原始数据，并将所检索的编码数据的位图矩阵转换为单位矩阵。

公开(公告)号：US06399429B1

公开(公告)日：2002-06-04

申请号：US09486619

申请日：2000-02-29

申请人： Hisayoshi Yamoto ,  Hideo Yamanaka ,  Yuichi Satou ,  Hajime Yagi

发明人： Hisayoshi Yamoto ,  Hideo Yamanaka ,  Yuichi Satou ,  Hajime Yagi

IPC分类号： H01L2100

CPC分类号： H01L27/127 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/76262 ,  H01L21/86 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/6678

摘要： Single-crystal silicon is deposited on an insulating substrate (1) with a crystalline sapphire layer (50) formed thereon as a seed, to form a silicon epitaxial layer (7). P-type impurity ions are implanted into a single-crystal silicon layer, and then N-type impurity ions are implanted to make a P-channel MOS transistor portion a single-crystal silicon layer (14). In a single-crystal silicon layer (11), an N+ source region (20) and drain region (21) of an N-channel MOS transistor are formed. Thus, a silicon layer is epitaxially grown uniformly at low temperatures.

摘要翻译： 将单晶硅沉积在其上形成有晶体蓝宝石层（50）的绝缘基板（1）上，以形成硅外延层（7）。 将P型杂质离子注入到单晶硅层中，然后注入N型杂质离子以使P沟道MOS晶体管部分成为单晶硅层（14）。 在单晶硅层（11）中，形成N沟道MOS晶体管的N +源极区（20）和漏极区（21）。 因此，硅层在低温下均匀地外延生长。

公开(公告)号：US06521525B2

公开(公告)日：2003-02-18

申请号：US09993765

申请日：2001-11-27

申请人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Satou ,  Hajime Yagi

发明人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Satou ,  Hajime Yagi

IPC分类号： H01L31119

CPC分类号： H01L29/6678 ,  G02F1/13454 ,  H01L27/12 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/78654

摘要： An electro-optic device, such as an LCD, includes a display unit and a peripheral drive circuit unit on a single substrate. A gate comprising a gate electrode and gate insulation film is formed on a surface of the substrate. A layer of a substance having good lattice compatibility with manocrystalline silicon is formed over the gate insulation film. A layer of monocrystalline silicon is formed over the substance layer. Manocrystalline silicon is heteroepitaxially grown by catalytic CVD or the like using a crystalline sapphire film formed on the substrate to form the monocrystalline silicon layer. The monocrystalline silican layer is used as a dual gate MOSTFT of the electro-optic device.

摘要翻译： 诸如LCD的电光装置在单个基板上包括显示单元和外围驱动电路单元。 在基板的表面上形成包括栅电极和栅极绝缘膜的栅极。 在栅极绝缘膜上形成有与晶体硅具有良好晶格相容性的物质层。 在物质层上形成一层单晶硅。 通过使用形成在基板上的结晶蓝宝石膜通过催化CVD等异质外延生长晶硅以形成单晶硅层。 单晶硅胶层用作电光器件的双栅MOSTFT。

公开(公告)号：US06825070B2

公开(公告)日：2004-11-30

申请号：US10301839

申请日：2002-11-22

申请人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Satou ,  Hajime Yagi

发明人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Satou ,  Hajime Yagi

IPC分类号： H01L2136

CPC分类号： H01L27/1222 ,  G02F1/13454 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66772 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78648

摘要： A single crystal silicon is graphoepitaxially grown using a step formed on a substrate as a seed by a catalyst process, and the obtained single crystal silicon layer is used for a dual gate type MOSTFT in an electro-optical apparatus such as a display section of a peripheral driving circuit integration type LCD. A single crystal silicon thin film having high electron/hole mobility is formed into a uniform film at a relatively low temperature, which enables the manufacturing of an active matrix substrate incorporated with a high-performance driver which can be used in a TFT display.

摘要翻译： 使用通过催化剂工艺在作为晶种的基板上形成台阶的方法将单晶硅生长，并将得到的单晶硅层用于诸如显示部分的电光装置中的双栅型MOSTFT 外围驱动电路集成型LCD。 具有高电子/空穴迁移率的单晶硅薄膜在相对较低的温度下形成均匀的膜，这使得能够制造掺入可用于TFT显示器的高性能驱动器的有源矩阵基板。

公开(公告)号：US06346718B1

公开(公告)日：2002-02-12

申请号：US09413497

申请日：1999-10-06

申请人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Satou ,  Hajime Yagi

发明人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Satou ,  Hajime Yagi

IPC分类号： H01L2974

CPC分类号： H01L29/6678 ,  G02F1/13454 ,  H01L27/12 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/78654

摘要： An electro-optic device, such as an LCD, includes a display unit and a peripheral drive circuit unit on a single substrate. A gate comprising a gate electrode and gate insulation film is formed on a surface of the substrate. A layer of a substance having good lattice compatibility with monocrystalline silicon is formed over the gate insulation film. A layer of monocrystalline silicon is formed over the substance layer. Monocrystalline silicon is heteroepitaxially grown by catalytic CVD or the like using a crystalline sapphire film formed on the substrate to form the monocrystalline silicon layer. The monocrystalline silicon layer is used as a dual gate MOSTFT of the electro-optic device.

摘要翻译： 诸如LCD的电光装置在单个基板上包括显示单元和外围驱动电路单元。 在基板的表面上形成包括栅电极和栅极绝缘膜的栅极。 在栅极绝缘膜上形成与单晶硅具有良好晶格相容性的物质层。 在物质层上形成一层单晶硅。 单晶硅通过催化CVD等异质外延生长，使用形成在基板上的结晶蓝宝石膜形成单晶硅层。 单晶硅层用作电光器件的双栅MOSTFT。

公开(公告)号：US06504215B1

公开(公告)日：2003-01-07

申请号：US09406138

申请日：1999-09-27

申请人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Satou ,  Hajime Yagi

发明人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Satou ,  Hajime Yagi

IPC分类号： H01L2701

CPC分类号： H01L27/1222 ,  G02F1/13454 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66772 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78648

摘要： A single crystal silicon is graphoepitaxially grown using a step formed on a substrate as a seed by a catalyst process, and the obtained single crystal silicon layer is used for a dual gate type MOSTFT in an electro-optical apparatus such as a display section of a peripheral driving circuit integration type LCD. A single crystal silicon thin film having high electron/hole mobility is formed into a uniform film at a relatively low temperature, which enables the manufacturing of an active matrix substrate incorporated with a high-performance driver which can be used in a TFT display.

摘要翻译： 使用通过催化剂工艺在作为晶种的基板上形成台阶的方法将单晶硅生长，并将得到的单晶硅层用于诸如显示部分的电光装置中的双栅型MOSTFT 外围驱动电路集成型LCD。 具有高电子/空穴迁移率的单晶硅薄膜在相对较低的温度下形成均匀的膜，这使得能够制造掺入可用于TFT显示器的高性能驱动器的有源矩阵基板。