摘要:
An information processing device includes an execution unit that executes a control program for causing a functional unit to realize a predetermined function, a memory that stores the control program, a state variable indicating a state of the functional unit, and activation history of either initial activation or second and following activation, in a nonvolatile memory, and a communication unit that causes the execution unit to communicate with the functional unit, wherein the execution unit includes a first procedure where the control program is stored in the memory and the control program is read and is executed, and a second procedure where the control program pre-stored in the memory is read and is executed, refers to the activation history when activation is performed, executes the first procedure in a case of the initial activation, and executes the second procedure in a case of the second and following activation.
摘要:
A program executing apparatus, includes: a nonvolatile memory that stores a program for activating an equipment and a variable used in the program and sustains the stored program and the variable even though power is not supplied, the program and the variable being able to be read out and written into the nonvolatile memory; and an executing unit that transmits the program and the variable to the nonvolatile memory when the activation of the equipment is instructed at an initial status where the program and the variable are not stored in the nonvolatile memory, and successively executes the program using the variable stored in the nonvolatile memory, and, when the activation of the equipment is re-instructed, executes the program using the variable stored in the nonvolatile memory.
摘要:
In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要:
A series of new compounds, called "the phomactins" is provided and may be isolated from the culture broth of fungi of the genus Phoma, especially Phoma sp. SANK 11486 (No. FERM BP-2598). These compounds are platelet activating factor antagonists and may be used for the treatment of disorders for which known such agents may also be used.
摘要:
In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends,there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要:
In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要:
In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要:
In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要:
A download method comprises an auxiliary downloader storing step for storing an auxiliary downloader 38 in a storage unit by executing a downloader 22 stored in the storage unit, a new software storing step for storing new software 40 in a region of the storage unit other than the storage region where the auxiliary downloader 38 is stored, and a downloader starting step for executing the auxiliary downloader 38 in the event of failure of the storage of the new software 40.
摘要:
In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.