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公开(公告)号：US5714407A
公开(公告)日：1998-02-03
申请号：US414973
申请日：1995-03-31
申请人： Matagoro Maeno , Masayuki Miyashita , Hirohisa Kikuyama , Tatsuhiro Yabune , Jun Takano , Hirofumi Fukui , Satoshi Miyazawa , Chisato Iwasaki , Tadahiro Ohmi , Yasuhiko Kasama , Hitoshi Seki
发明人： Matagoro Maeno , Masayuki Miyashita , Hirohisa Kikuyama , Tatsuhiro Yabune , Jun Takano , Hirofumi Fukui , Satoshi Miyazawa , Chisato Iwasaki , Tadahiro Ohmi , Yasuhiko Kasama , Hitoshi Seki
IPC分类号： C09K13/08 , H01L21/3213 , H01L21/00 , C09K13/00
CPC分类号： H01L21/32134 , C09K13/08
摘要： An etching agent and an electronic device manufacturing method using the etching agent. The etching agent contains, in a solution, hydrofluoric acid at a concentration of 0.05 to 0.5 mol/l, and halooxoacid ions, represented by the formula (XO.sub.n).sup.p- (wherein X is a halogen element, n is 3, 4 or 6, p is 1, 2 or 3), at a concentration of at least 0.01 mol/l. An electronic device manufactured using the etching agent requires only a single etching step to etch both conductive layers (such as aluminum) as well as ohmic contact layers (a-Si).
摘要翻译： 蚀刻剂和使用该蚀刻剂的电子器件制造方法。 蚀刻剂在溶液中含有浓度为0.05〜0.5mol / l的氢氟酸和由式（XOn）p-（其中X为卤素元素，n为3,4或6）表示的卤代酸离子 ，p为1,2或3），浓度为至少0.01mol / l。 使用蚀刻剂制造的电子器件仅需要蚀刻两个导电层（例如铝）以及欧姆接触层（a-Si）的单一蚀刻步骤。
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公开(公告)号：US06797194B1
公开(公告)日：2004-09-28
申请号：US09622397
申请日：2000-12-01
IPC分类号： C09K1300
CPC分类号： H01L21/02063 , H01L21/02129 , H01L21/02164 , H01L21/02238 , H01L21/02271 , H01L21/02274 , H01L21/31111 , H01L21/76814
摘要： The present invention provides a micromachining surface treatment material for and a surface treatment method that suppress widening of the diameter of contact holes when removing a natural oxidation layer arising at bottom sections of the contact holes. The micromachining surface treatment material contains less than 0.1% hydrofluoric acid, and more than 40% by weight but less than or equal to 47% by weight of ammonium fluoride. Also, a surfactant is contained therein in an amount from 0.0001 to 0.1% by weight.
摘要翻译： 本发明提供了一种用于表面处理方法的微加工表面处理材料，并且在去除在接触孔底部产生的自然氧化层时，抑制接触孔直径的扩大。 微加工表面处理材料含有小于0.1％的氢氟酸，和大于40重量％但小于或等于47重量％的氟化铵。 此外，其中含有0.0001至0.1重量％的表面活性剂。
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3.发明申请SURFACE TREATMENT SOLUTION FOR THE FINE SURFACE PROCESSING OF A GLASS SUBSTRATE CONTAINING MULTIPLE INGREDIENTS 失效用于表面处理含有多种成分的玻璃基材的表面处理解决方案公开(公告)号：US20090075486A1
公开(公告)日：2009-03-19
申请号：US12237981
申请日：2008-09-25
IPC分类号： H01L21/306
CPC分类号： C03C15/00
摘要： A surface treatment solution for finely processing a glass substrate containing multiple ingredients is used for the construction of liquid crystal-based or organic electroluminescence-based flat panel display devices without invoking crystal precipitation and/or increasing surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF) and ammonium fluoride (NH4F), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution can advantageously be adjusted to maximize the etching rate.
摘要翻译： 用于精细加工含有多种成分的玻璃基板的表面处理溶液用于构建基于液晶或有机电致发光的平板显示装置，而不会引起晶体沉淀和/或增加表面粗糙度。 本发明的蚀刻溶液除氢氟酸（HF）和氟化铵（NH4F）外还含有至少一种离子常数大于HF的酸。 可以有利地调节溶液中酸的浓度以最大化蚀刻速率。
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公开(公告)号：US06821452B2
公开(公告)日：2004-11-23
申请号：US10609834
申请日：2003-06-27
IPC分类号： C03C1500
CPC分类号： H01L21/31111 , H01L21/31144
摘要： An etching agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.
摘要翻译： 可以在不损害抗蚀剂图案的情况下高速蚀刻绝缘膜的蚀刻剂，在半导体制造工艺中的绝缘膜蚀刻工艺被单晶片处理蚀刻处理方法代替时，提供逼真的生产量，并且防止在 半导体蚀刻后。
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公开(公告)号：US06585910B1
公开(公告)日：2003-07-01
申请号：US09125440
申请日：1999-03-26
IPC分类号： C09K1308
CPC分类号： H01L21/31111 , H01L21/31144
摘要： An etching treatment agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.
摘要翻译： 可以在不损害抗蚀剂图案的情况下高速蚀刻绝缘膜的蚀刻处理剂，在半导体制造工艺中的绝缘膜蚀刻工艺被单晶片处理蚀刻处理方法代替时，提供逼真的生产量，并且防止表面上的粗糙度 蚀刻后的半导体。
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6.发明申请SURFACE TREATING FLUID FOR FINE PROCESSING OF MULTI-COMPONENT GLASS SUBSTRATE 审中-公开用于精细加工多组分玻璃基材的表面处理流体公开(公告)号：US20070215835A1
公开(公告)日：2007-09-20
申请号：US10488036
申请日：2002-09-02
IPC分类号： C09K13/08
摘要： A surface treatment solution for finely processing a glass substrate containing multiple ingredients like the one used for the construction of a liquid crystal-based or organic electroluminescence-based flat panel display device, without evoking crystal precipitation and surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution is adjusted.
摘要翻译： 一种表面处理溶液，用于微细加工含有用于构建液晶或有机电致发光的平板显示装置的多种成分的玻璃基板，而不会引起晶体析出和表面粗糙度。 除了氢氟酸（HF）外，本发明的蚀刻溶液还含有至少一种其解离常数大于HF的酸。 调节溶液中酸的浓度。
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7.发明申请Surface treating solution for fine processing of glass base plate having a plurality of components 审中-公开具有多个部件的玻璃基板的精加工用表面处理液公开(公告)号：US20070029519A1
公开(公告)日：2007-02-08
申请号：US10487770
申请日：2002-08-26
IPC分类号： C09K13/00
CPC分类号： C03C15/00
摘要： A surface treatment solution for finely processing a glass substrate containing multiple ingredients is used for the construction of liquid crystal-based or organic electroluminescence-based flat panel display devices without invoking crystal precipitation and/or increasing surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF) and ammonium fluoride (NH4F), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution can advantageously be adjusted to maximize the etching rate.
摘要翻译： 用于精细加工含有多种成分的玻璃基板的表面处理溶液用于构建基于液晶或有机电致发光的平板显示装置，而不会引起晶体沉淀和/或增加表面粗糙度。 除氢氟酸（HF）和氟化铵（NH 4 F F）外，本发明的蚀刻溶液含有至少一种其解离常数大于HF的酸。 可以有利地调节溶液中酸的浓度以最大化蚀刻速率。
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8.发明授权Surface treatment solution for the fine surface processing of a glass substrate containing multiple ingredients 失效表面处理溶液，用于对含有多种成分的玻璃基材的精细表面加工公开(公告)号：US08066898B2
公开(公告)日：2011-11-29
申请号：US12237981
申请日：2008-09-25
IPC分类号： B44C1/22
CPC分类号： C03C15/00
摘要： A surface treatment solution for finely processing a glass substrate containing multiple ingredients is used for the construction of liquid crystal-based or organic electroluminescence-based flat panel display devices without invoking crystal precipitation and/or increasing surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF) and ammonium fluoride (NH4F), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution can advantageously be adjusted to maximize the etching rate.
摘要翻译： 用于精细加工含有多种成分的玻璃基板的表面处理溶液用于构建基于液晶或有机电致发光的平板显示装置，而不会引起晶体沉淀和/或增加表面粗糙度。 本发明的蚀刻溶液除氢氟酸（HF）和氟化铵（NH4F）外还含有至少一种离子常数大于HF的酸。 可以有利地调节溶液中酸的浓度以最大化蚀刻速率。
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公开(公告)号：US6027571A
公开(公告)日：2000-02-22
申请号：US66354
申请日：1998-06-29
IPC分类号： C23F1/24 , H01L21/308 , H01L21/311 , H01L21/3213 , C09K13/00 , C09K13/08 , C23G1/02
CPC分类号： H01L21/31111 , H01L21/32134
摘要： A fine surface treatment for micromachining having an etching speed whose difference is smaller to oxide films each obtained by a different method as well as conditions of forming film or having different concentration of various impurities such as P, B and As in the film, and also having a practical etching speed to each of the films. The surface treatment for micromachining contains 0.1 to 8 weight percent of hydrogen fluoride and not less than 40 weight percent to not more than 47 weight percent of ammonium fluoride. It should be noted that it is preferable the surface treatment agent contains 0.001 to 1 weight percent of surfactant.
摘要翻译： PCT No.PCT / JP97 / 02978第 371日期：1998年4月28日 102（e）1998年4月28日PCT PCT 1997年8月27日PCT公布。 公开号WO98 / 09320 日期1998年3月5日对于通过不同的方法获得的氧化膜的蚀刻速度差异小的微加工的微细加工的表面处理以及形成膜或不同浓度的各种杂质如P，B和As的条件 膜，并且还具有对每个膜的实际蚀刻速度。 微加工的表面处理包含0.1至8重量％的氟化氢和不少于40重量％至不超过47重量％的氟化铵。 另外，表面处理剂优选含有0.001〜1重量％的表面活性剂。
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10.发明授权公开(公告)号：US08470278B2
公开(公告)日：2013-06-25
申请号：US12990914
申请日：2009-08-04
IPC分类号： C01B25/10
CPC分类号： H01M10/0568 , C01B25/10 , C01B25/455 , H01M10/052 , H01M2300/0025 , Y02T10/7011
摘要： A method of manufacturing phosphorus pentafluoride and hexafluorophosphate can suppress the manufacturing cost and also can manufacture high-quality phosphorus pentafluoride from an inexpensive and low-quality raw material. The raw material for the method can include at least a phosphorus atom and a fluorine atom. These are brought into contact with a carrier gas, and a phosphorus pentafluoride is extracted and separated into the carrier gas. A method of manufacturing hexafluorophosphate includes reacting fluoride with the resulting phosphorus pentafluoride according to the following chemical reaction scheme: sPF5+AFs→A(PF6)s, in which s is in the range of 1≦s≦3, and A is at least one of the following: Li, Na, K, Rb, Cs, NH4, Ag, Mg, Ca, Ba, Zn, Cu, Pb, Al and Fe.
摘要翻译： 制造五氟化磷和六氟磷酸盐的方法可以抑制制造成本，并且还可以从廉价且低质量的原料制造高品质的五氟化磷。 该方法的原料可以至少包含磷原子和氟原子。 使其与载气接触，并且将五氟化磷萃取并分离成载气。 制造六氟磷酸盐的方法包括：根据以下化学反应方案使氟化物与得到的五氟化磷反应：sPF5 + AFs-> A（PF6）s，其中s在1 @ s @ 3的范围内，A在 Li，Na，K，Rb，Cs，NH4，Ag，Mg，Ca，Ba，Zn，Cu，Pb，Al和Fe中的至少一种。
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