公开(公告)号：US07231079B2

公开(公告)日：2007-06-12

申请号：US10050519

申请日：2002-01-18

申请人： Hirohito Okuda ,  Yuji Takagi ,  Masahiro Watanabe ,  Shunji Maeda ,  Minori Noguchi ,  Yoshimasa Ooshima ,  Makoto Ono

发明人： Hirohito Okuda ,  Yuji Takagi ,  Masahiro Watanabe ,  Shunji Maeda ,  Minori Noguchi ,  Yoshimasa Ooshima ,  Makoto Ono

IPC分类号： G06K9/00

CPC分类号： G01N21/956 ,  G01N21/9501 ,  G01N2021/8854 ,  G01N2021/8861

摘要： For the purpose of reducing a false report and shortening inspection time, an area to be inspected is locally inspected under optimum inspection conditions. In order to avoid the number of detected defects from increasing explosively, and thereby to facilitate control of a critical defect, general-purpose layout data, which is used for producing a mask of a semiconductor wafer, is accumulated in a design information server 2. With reference to the layout data, an area to be inspected, which is inspected by a pattern inspecting apparatus 1, is divided into partial inspection areas including a cell portion and a non-cell portion. Inspection parameters are set for each of the partial inspection areas. In addition, the defect reviewing apparatus 8 obtains an inspection result of the pattern inspecting apparatus 1. When obtaining a defect image, the defect reviewing apparatus 8 identifies a position, where the defect occurred, from among a cell portion, a non-cell portion, a pattern dense portion, and the like according to layout data. Moreover, the defect reviewing apparatus 8 sets inspection parameters, such as pickup magnification of this defect, in response to a result of the identification to set a control criterion of criticality.

摘要翻译： 为了减少虚假报告和缩短检查时间，在最佳检查条件下对被检查区域进行局部检查。 为了避免检测到的缺陷数量爆炸性增加，从而有利于控制关键缺陷，用于制造半导体晶片的掩模的通用布局数据被累积在设计信息服务器2中。 参照布局数据，由图案检查装置1检查的被检查区域被划分为包括单元部分和非单元部分的局部检查区域。 为每个部分检查区域设置检查参数。 另外，缺陷检查装置8获得图案检查装置1的检查结果。 当获得缺陷图像时，缺陷检查装置8根据布局数据从单元部分，非单元部分，图案密集部分等中识别发生缺陷的位置。 此外，缺陷检查装置8响应于识别的结果设置检查参数，例如该缺陷的拾取倍率，以设置关键性的控制标准。

公开(公告)号：US06841403B2

公开(公告)日：2005-01-11

申请号：US10348747

申请日：2003-01-21

申请人： Maki Tanaka ,  Shunji Maeda ,  Minori Noguchi ,  Takafumi Okabe ,  Yuji Takagi ,  Chie Shishido

发明人： Maki Tanaka ,  Shunji Maeda ,  Minori Noguchi ,  Takafumi Okabe ,  Yuji Takagi ,  Chie Shishido

IPC分类号： H01L21/00 ,  H01L21/66 ,  G06F19/00

CPC分类号： H01L21/67276 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a method for manufacturing semiconductor device and a method and apparatus for processing detected defect data, making it possible to quickly infer or determine a process and related manufacturing equipment that causes defects in a fabrication line of semiconductor devices, take remedy action, and achieve a constant and high yield. The method of the invention comprises quantitatively evaluating similarity of a defects distribution on a wafer that suffered abnormal occurrence of defects to inspection results for wafers inspected in the past, analyzing cyclicity of data sequence of evaluated similarity, evaluating relationship between the cyclicity of defects obtained from the analysis and the process method according to each manufacturing equipment in the fabrication line, and inferring or determining a causal process and equipment that caused the defects.

摘要翻译： 本发明公开了一种用于制造半导体器件的方法和用于处理检测到的缺陷数据的方法和装置，使得可以快速推断或确定导致半导体器件制造线中的缺陷的处理和相关制造设备，采取补救措施，以及 实现恒定和高收益。 本发明的方法包括定量评估在异常发生缺陷的晶片上的缺陷分布与以往检查的晶片的检查结果的相似性，分析评估的相似性的数据序列的循环性，评估从 根据制造线上每个制造设备的分析和处理方法，并推断或确定引起缺陷的因果过程和设备。

公开(公告)号：US06797526B2

公开(公告)日：2004-09-28

申请号：US10232871

申请日：2002-08-30

申请人： Maki Tanaka ,  Shunji Maeda ,  Minori Noguchi ,  Takafumi Okabe ,  Yuji Takagi ,  Chie Shishido

发明人： Maki Tanaka ,  Shunji Maeda ,  Minori Noguchi ,  Takafumi Okabe ,  Yuji Takagi ,  Chie Shishido

IPC分类号： H01L2100

CPC分类号： H01L21/67276 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a method for manufacturing semiconductor device and a method and apparatus for processing detected defect data, making it possible to quickly infer or determine a process and related manufacturing equipment that causes defects in a fabrication line of semiconductor devices, take remedy action, and achieve a constant and high yield. The method of the invention comprises quantitatively evaluating similarity of a defects distribution on a wafer that suffered abnormal occurrence of defects to inspection results for wafers inspected in the past, analyzing cyclicity of data sequence of evaluated similarity, evaluating relationship between the cyclicity of defects obtained from the analysis and the process method according to each manufacturing equipment in the fabrication line, and inferring or determining a causal process and equipment that caused the defects.

摘要翻译： 本发明公开了一种用于制造半导体器件的方法和用于处理检测到的缺陷数据的方法和装置，使得可以快速推断或确定导致半导体器件制造线中的缺陷的处理和相关制造设备，采取补救措施，以及 实现恒定和高收益。 本发明的方法包括定量评估在异常发生缺陷的晶片上的缺陷分布与以往检查的晶片的检查结果的相似性，分析评估的相似性的数据序列的循环性，评估从 根据制造线上每个制造设备的分析和处理方法，并推断或确定引起缺陷的因果过程和设备。

公开(公告)号：US06897956B2

公开(公告)日：2005-05-24

申请号：US10235656

申请日：2002-09-06

申请人： Minori Noguchi ,  Masahiko Nakada ,  Takahiko Suzuki ,  Taketo Ueno ,  Toshihiko Nakata ,  Shunji Maeda

发明人： Minori Noguchi ,  Masahiko Nakada ,  Takahiko Suzuki ,  Taketo Ueno ,  Toshihiko Nakata ,  Shunji Maeda

IPC分类号： G01B11/00 ,  G01B11/27 ,  H01L21/027 ,  H01L21/66 ,  H05K1/02 ,  H05K3/46

CPC分类号： G01B11/272 ,  H05K1/0269 ,  H05K3/4638

摘要： An apparatus for measuring an alignment accuracy between overlaid alignment marks formed to each of alignment mark portions on every plural chip units or exposure units arranged on a substrate to be measured, comprising: an XY stage running in a direction x and in a direction y while mounting the substrate; an illumination optical system for illuminating each of the alignment mark portions in a state where the XY stage runs in a direction x which is a direction of arranging the chips; a detecting optical system having an objective lens for collecting a reflection light in the running state obtained from the overlaid alignment marks, a focusing optical system for focusing the reflection light in the running state obtained from the objective lens, a scanning optical system for scanning reflection light image in the running state focused by the focusing optical system in a direction opposite to that of the running and a linear image sensor receiving reflection light image substantially in a static state being scanned in the opposite direction by the scanning optical system and converting them into image signal; and an alignment accuracy calculation device for measuring the alignment accuracy between the overlaid alignment marks at least for a direction perpendicular to the running direction based on the image signal converted by the linear image sensor.

摘要翻译： 一种用于测量在布置在待测量基板上的每个多个芯片单元或曝光单元上形成的每个对准标记部分上的重叠对准标记之间的对准精度的装置，包括：沿x方向和y方向运行的XY台， 安装基板; 照明光学系统，用于在XY台在作为排列芯片的方向的方向x上行进的状态下照亮每个对准标记部分; 一种检测光学系统，具有用于收集从重叠的对准标记获得的运行状态的反射光的物镜，用于将反射光聚焦在从物镜获得的运行状态的聚焦光学系统，用于扫描反射的扫描光学系统 聚焦光学系统以与行进方向相反的方向聚焦的运行状态的光图像和接收基本处于静止状态的反射光图像的线性图像传感器被扫描光学系统沿相反方向扫描并将其转换成 图像信号; 以及对准精度计算装置，用于根据由线性图像传感器转换的图像信号，至少对垂直于行进方向的方向测量重叠的对准标记之间的对准精度。

公开(公告)号：US06654112B2

公开(公告)日：2003-11-25

申请号：US10140183

申请日：2002-05-08

申请人： Minori Noguchi ,  Shunji Maeda ,  Yukihiro Shibata ,  Takanori Ninomiya

发明人： Minori Noguchi ,  Shunji Maeda ,  Yukihiro Shibata ,  Takanori Ninomiya

IPC分类号： G01N2189

CPC分类号： G01N21/9501

摘要： A method and apparatus for inspecting a specimen which includes emitting a deep ultraviolet light from a light source illuminating a sample with the deep ultraviolet light through an objective lens, detecting an optical image of the sample by receiving light from the sample by the illumination with a time delay integration sensor through the objective lens, and outputting an image signal, processing the outputted image signal to extract a defect candidate, and determining a defect among the extracted defect candidate using information of a characteristic quality of the extracted defect candidate. In the detection, the time delay integration sensor receives the light from the sample by the illumination through a rear side of the time delay integration sensor.

公开(公告)号：US06400454B1

公开(公告)日：2002-06-04

申请号：US09490844

申请日：2000-01-24

申请人： Minori Noguchi ,  Shunji Maeda ,  Yukihiro Shibata ,  Takanori Ninomiya

发明人： Minori Noguchi ,  Shunji Maeda ,  Yukihiro Shibata ,  Takanori Ninomiya

IPC分类号： G01N2189

CPC分类号： G01N21/9501

摘要： The present invention provides a defect inspection method and an apparatus adopting the method which comprises the steps of: using a radiation optical system to radiate a Gaussian light beam to an area of detection on a substrate serving as an object of inspection and having a circuit pattern created thereon wherein the Gaussian light beam is shaped to give an illumination-intensity distribution of a Gaussian distribution having a standard deviation about equal to the distance from an optical axis of the area of detection to the periphery of the area of detection; using a detection optical system to form an optical image of the area of detection on the substrate serving as an object of inspection by radiation of the shaped Gaussian light beam to a photo-sensitive surface of a detector corresponding to the area of detection and to detect a picture signal corresponding to the area of detection and originating from the detector; and detecting a defect caused by typically an extraneous material existing in the area of detection on the basis of the detected picture signal.

摘要翻译： 本发明提供一种缺陷检查方法和采用该方法的装置，该方法包括以下步骤：使用辐射光学系统将高斯光束照射到作为检查对象的基板上的检测区域中，并具有电路图案 其中高斯光束被成形为给出具有大约等于从检测区域的光轴到检测区域的周边的距离的标准偏差的高斯分布的照明强度分布;使用检测 光学系统，以形成通过将成形高斯光束照射到与检测区域相对应的检测器的光敏表面的检查对象的基板上的检测区域的光学图像，并检测图像信号 对应于检测区域并来自检测器; 并且基于检测到的图像信号检测通常存在于检测区域中的外来材料所引起的缺陷。

公开(公告)号：US06806970B2

公开(公告)日：2004-10-19

申请号：US10705970

申请日：2003-11-13

申请人： Takenori Hirose ,  Minori Noguchi ,  Yukio Kenbo ,  Shunji Maeda ,  Takanori Ninomiya ,  Hirofumi Tsuchiyama

发明人： Takenori Hirose ,  Minori Noguchi ,  Yukio Kenbo ,  Shunji Maeda ,  Takanori Ninomiya ,  Hirofumi Tsuchiyama

IPC分类号： G01B1128

CPC分类号： G01B11/0625

摘要： This invention aims to measure film thickness and film thickness distribution to high precision in a wide range of transparent films. As one example, in a CMP process, the film thickness of an outermost surface layer formed on a step pattern of an actual product can be measured so that high precision film thickness control can be performed. To achieve an increase of processing throughput, the film thickness of an optically transparent film formed on an actual device pattern is controlled to high precision by incorporating a film thickness measuring unit, which performs frequency analysis of a spectral distribution, in a polishing apparatus. As a result, an increase of processing throughput is realized. To perform the high precision measurement, the frequency analysis is performed on the spectral distribution waveform of interference light from white light due to the film, and an absolute value of film thickness is computed from the relation of the phase of frequency components in the waveform and film thickness.

摘要翻译： 本发明旨在在宽范围的透明膜中以高精度测量膜厚度和膜厚分布。 作为一个实例，在CMP工艺中，可以测量形成在实际产品的台阶图案上的最外表面层的膜厚度，从而可以进行高精度的膜厚度控制。 为了实现加工量的增加，通过在抛光装置中并入进行频谱分布的频谱分析的膜厚测量单元，将实际装置图案上形成的光学透明膜的膜厚控制为高精度。 结果，实现了处理吞吐量的增加。 为了执行高精度测量，对由于膜引起的白光的干涉光的光谱分布波形进行频率分析，并且根据波形中的频率分量的相位与波形的相位关系来计算绝对值 膜厚度。

公开(公告)号：US06753972B1

公开(公告)日：2004-06-22

申请号：US09622570

申请日：2000-08-18

申请人： Takenori Hirose ,  Minori Noguchi ,  Yukio Kenbo ,  Shunji Maeda ,  Takanori Ninomiya ,  Hirofumi Tsuchiyama

发明人： Takenori Hirose ,  Minori Noguchi ,  Yukio Kenbo ,  Shunji Maeda ,  Takanori Ninomiya ,  Hirofumi Tsuchiyama

IPC分类号： G01B1128

CPC分类号： G01B11/0625

摘要： This invention aims to measure film thickness and film thickness distribution to high precision in a wide range of transparent films. As one example, in a CMP process, the film thickness of an outermost surface layer formed on a step pattern of an actual product can be measured so that high precision film thickness control can be performed. To achieve an increase of processing throughput, the film thickness of an optically transparent film formed on an actual device pattern is controlled to high precision by incorporating a film thickness measuring unit, which performs frequency analysis of a spectral distribution, in a polishing apparatus. As a result, an increase of processing throughput is realized. To perform the high precision measurement, the frequency analysis is performed on the spectral distribution waveform of interference light from white light due to the film, and an absolute value of film thickness is computed from the relation of the phase of frequency components in the waveform and film thickness.

公开(公告)号：US07271908B2

公开(公告)日：2007-09-18

申请号：US11131378

申请日：2005-05-18

申请人： Minori Noguchi ,  Masahiko Nakada ,  Takahiko Suzuki ,  Taketo Ueno ,  Toshihiko Nakata ,  Shunji Maeda

发明人： Minori Noguchi ,  Masahiko Nakada ,  Takahiko Suzuki ,  Taketo Ueno ,  Toshihiko Nakata ,  Shunji Maeda

IPC分类号： G01B11/00

CPC分类号： G01B11/272 ,  H05K1/0269 ,  H05K3/4638

摘要： An apparatus for measuring an alignment accuracy between overlaid alignment marks formed to each of alignment mark portions on every plural chip units or exposure units arranged on a substrate to be measured includes an XY stage movable X and Y directions while mounting the substrate, an illumination system for illuminating each of the alignment mark portions, a detecting system having a lens for collecting a reflection light, a focusing system for focusing the reflection light, a scanning system for scanning a reflection light image and an image sensor receiving reflection light image for conversion into an image signal. An alignment accuracy calculator measures the alignment accuracy between the overlaid alignment marks.

摘要翻译： 用于测量在布置在被测定的基板上的每个多个芯片单元或曝光单元上形成的每个对准标记部分上的重叠对准标记之间的对准精度的装置包括XY台可移动X和Y方向，同时安装基板，照明系统 用于照亮每个对准标记部分，具有用于收集反射光的透镜的检测系统，用于聚焦反射光的聚焦系统，用于扫描反射光图像的扫描系统和接收反射光图像的图像传感器转换成 图像信号。 对准精度计算器测量重叠对准标记之间的对准精度。

公开(公告)号：US20050206898A1

公开(公告)日：2005-09-22

申请号：US11131378

申请日：2005-05-18

申请人： Minori Noguchi ,  Masahiko Nakada ,  Takahiko Suzuki ,  Taketo Ueno ,  Toshihiko Nakata ,  Shunji Maeda

发明人： Minori Noguchi ,  Masahiko Nakada ,  Takahiko Suzuki ,  Taketo Ueno ,  Toshihiko Nakata ,  Shunji Maeda

IPC分类号： G01B11/00 ,  G01B11/27 ,  H01L21/027 ,  H01L21/66 ,  H05K1/02 ,  H05K3/46

CPC分类号： G01B11/272 ,  H05K1/0269 ,  H05K3/4638

摘要： An apparatus for measuring an alignment accuracy between overlaid alignment marks formed to each of alignment mark portions on every plural chip units or exposure units arranged on a substrate to be measured includes an XY stage movable X and Y directions while mounting the substrate, an illumination system for illuminating each of the alignment mark portions, a detecting system having a lens for collecting a reflection light, a focusing system for focusing the reflection light, a scanning system for scanning a reflection light image and an image sensor receiving reflection light image for conversion into an image signal. An alignment accuracy calculator measures the alignment accuracy between the overlaid alignment marks.

摘要翻译： 用于测量在布置在被测定的基板上的每个多个芯片单元或曝光单元上形成的每个对准标记部分上的重叠对准标记之间的对准精度的装置包括XY台可移动X和Y方向，同时安装基板，照明系统 用于照亮每个对准标记部分，具有用于收集反射光的透镜的检测系统，用于聚焦反射光的聚焦系统，用于扫描反射光图像的扫描系统和接收反射光图像的图像传感器转换成 图像信号。 对准精度计算器测量重叠对准标记之间的对准精度。