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    ELECTRONIC ELEMENT
    1.
    发明申请
    ELECTRONIC ELEMENT 有权
    电子元件

    公开(公告)号：US20100078632A1

    公开(公告)日：2010-04-01

    申请号：US12631460

    申请日：2009-12-04

    申请人： Hirokatsu Miyata ,  Yohei Ishida ,  Yasuhiro Kawashima

    发明人： Hirokatsu Miyata ,  Yohei Ishida ,  Yasuhiro Kawashima

    IPC分类号： H01L51/10 ,  H01L51/40

    CPC分类号： H01L51/0512 ,  Y10S977/893

    摘要： The object is to fabricate a novel organic semiconductor element which can effectively utilize the main-chain conduction of a conjugated high molecular compound having semiconductor-like properties. Provided is an electronic element which contains, as components, a pair of electrodes which is formed on a substrate, a mesoporous film in which tubular mesopores, which are orientation controlled in one direction, are formed, the mesoporous film being formed between the electrodes so as to be in contact with the electrodes, a conjugated high molecular compound held in the tubular mesopores, and a third electrode which is electrically insulated from the conjugated high molecular compound and is in contact with the mesoporous film.

    摘要翻译： 本发明的目的是制造能够有效利用具有半导体状特性的共轭高分子化合物的主链导电性的新颖的有机半导体元件。 提供了一种电子元件，其包含形成在基板上的一对电极作为部件，形成了在一个方向上被取向控制的管状介孔的介孔膜，所述介孔膜形成在电极之间，因此 与电极接触，保持在管状介孔中的共轭高分子化合物和与共轭高分子化合物电绝缘并与介孔膜接触的第三电极。

    Electronic element
    2.
    发明申请
    Electronic element 审中-公开
    电子元件

    公开(公告)号：US20060273312A1

    公开(公告)日：2006-12-07

    申请号：US11437786

    申请日：2006-05-22

    申请人： Hirokatsu Miyata ,  Yohei Ishida ,  Yasuhiro Kawashima

    发明人： Hirokatsu Miyata ,  Yohei Ishida ,  Yasuhiro Kawashima

    IPC分类号： H01L29/08

    CPC分类号： H01L51/0512 ,  Y10S977/893

    摘要： The object is to fabricate a novel organic semiconductor element which can effectively utilize the main-chain conduction of a conjugated high molecular compound having semiconductor-like properties. Provided is an electronic element which contains, as components, a pair of electrodes which is formed on a substrate, a mesoporous film in which tubular mesopores, which are orientation controlled in one direction, are formed, the mesoporous film being formed between the electrodes so as to be in contact with the electrodes, a conjugated high molecular compound held in the tubular mesopores, and a third electrode which is electrically insulated from the conjugated high molecular compound and is in contact with the mesoporous film.

    摘要翻译： 本发明的目的是制造能够有效利用具有半导体状特性的共轭高分子化合物的主链导电性的新颖的有机半导体元件。 提供了一种电子元件，其包含形成在基板上的一对电极作为部件，形成了在一个方向上被取向控制的管状介孔的介孔膜，所述介孔膜形成在电极之间，因此 与电极接触，保持在管状介孔中的共轭高分子化合物和与共轭高分子化合物电绝缘并与介孔膜接触的第三电极。

    Electronic element
    3.
    发明授权
    Electronic element 有权
    电子元件

    公开(公告)号：US07888170B2

    公开(公告)日：2011-02-15

    申请号：US12631460

    申请日：2009-12-04

    申请人： Hirokatsu Miyata ,  Yohei Ishida ,  Yasuhiro Kawashima

    发明人： Hirokatsu Miyata ,  Yohei Ishida ,  Yasuhiro Kawashima

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0512 ,  Y10S977/893

    摘要： The object is to fabricate a novel organic semiconductor element which can effectively utilize the main-chain conduction of a conjugated high molecular compound having semiconductor-like properties. Provided is an electronic element which contains, as components, a pair of electrodes which is formed on a substrate, a mesoporous film in which tubular mesopores, which are orientation controlled in one direction, are formed, the mesoporous film being formed between the electrodes so as to be in contact with the electrodes, a conjugated high molecular compound held in the tubular mesopores, and a third electrode which is electrically insulated from the conjugated high molecular compound and is in contact with the mesoporous film.

    摘要翻译： 本发明的目的是制造能够有效利用具有半导体状特性的共轭高分子化合物的主链导电性的新颖的有机半导体元件。 提供了一种电子元件，其包含形成在基板上的一对电极作为部件，形成了在一个方向上被取向控制的管状介孔的介孔膜，所述介孔膜形成在电极之间，因此 与电极接触，保持在管状介孔中的共轭高分子化合物和与共轭高分子化合物电绝缘并与介孔膜接触的第三电极。

    METHOD FOR PRODUCING ORIENTATION FILM
    5.
    发明申请
    METHOD FOR PRODUCING ORIENTATION FILM 审中-公开
    生产定向薄膜的方法

    公开(公告)号：US20090324845A1

    公开(公告)日：2009-12-31

    申请号：US12493202

    申请日：2009-06-28

    申请人： Yohei Ishida ,  Hirokatsu Miyata ,  Akira Sakai

    发明人： Yohei Ishida ,  Hirokatsu Miyata ,  Akira Sakai

    IPC分类号： C23C14/08

    CPC分类号： C23C14/226 ,  C23C14/08 ,  C23C14/5833

    摘要： A method for producing an orientation film that causes orientation of a liquid crystal includes a process of vapor depositing an inorganic oxide from an oblique direction on a substrate and forming an obliquely vapor-deposited film composed of a plurality of columnar structural bodies tilted at an angle equal to or greater than 20° from a substrate normal and a process of performing ion beam irradiation onto the plurality of columnar structural bodies constituting the obliquely vapor-deposited film. An ion beam irradiation direction in the ion beam irradiation process is in a plane including a vapor deposition direction of the inorganic oxide and the substrate normal and an angle of the ion beam irradiation direction θIB measured from the direction of the columnar structural bodies is within a range of +50°≦θIB≦+100° (θIB is taken to be positive on a side where the ion beam irradiation direction approaches the substrate normal from the direction of the columnar structural bodies).

    摘要翻译： 用于制造引起液晶取向的取向膜的方法包括在基板上从倾斜方向蒸镀无机氧化物的工序，形成由倾斜角度的多个柱状结构体构成的斜向蒸镀膜 与基板法线等于或大于20°，以及对构成倾斜蒸镀膜的多个柱状结构体进行离子束照射的工序。 离子束照射工序中的离子束照射方向为包括无机氧化物的蒸镀方向和基板法线的平面，从柱状结构体的方向测定的离子束照射方向θIB的角度在 + 50°<=θIB<= + 100°的范围（在离子束照射方向从柱状结构体的方向接近衬底法线的一侧，θIB被取为正）。

    LIQUID CRYSTAL OPTICAL DEVICE MANUFACTURING PROCESS
    6.
    发明申请
    LIQUID CRYSTAL OPTICAL DEVICE MANUFACTURING PROCESS 审中-公开
    液晶光学器件制造工艺

    公开(公告)号：US20090109387A1

    公开(公告)日：2009-04-30

    申请号：US12295692

    申请日：2007-11-29

    申请人： Akira Sakai ,  Hirokatsu Miyata ,  Yasufumi Asao ,  Yohei Ishida ,  Philip J. Martin ,  Avi Bendavid

    发明人： Akira Sakai ,  Hirokatsu Miyata ,  Yasufumi Asao ,  Yohei Ishida ,  Philip J. Martin ,  Avi Bendavid

    IPC分类号： G02F1/1337

    CPC分类号： G02F1/133734

    摘要： A manufacturing method of a liquid crystal optical device is provided including an alignment film forming step of forming an alignment film containing silicon oxide on a substrate, and a liquid crystal cell forming step of disposing a pair of substrates at least one of which the alignment film has been formed on, opposite to each other interposing a liquid crystal therebetween. In the alignment film forming step, the substrate surface is bombarded with a plasma beam generated by vacuum arc discharge using a cathode containing silicon, where the substrate is disposed on the course of the plasma beam obliquely with an angle. When the plasma beam bombards the substrate surface, plasma ions in the plasma beam have higher kinetic energy or higher flux density than plasma ions in a plasma beam which, if bombarding the substrate obliquely at the angle, form a film having a column structure.

    摘要翻译： 提供了一种液晶光学器件的制造方法，包括：在基板上形成含有氧化硅的取向膜的取向膜形成工序;以及液晶单元形成工序，配置一对基板，至少其中一个取向膜 彼此相对地形成在其间插入液晶。 在取向膜形成步骤中，使用包含硅的阴极通过真空电弧放电产生的等离子体束来轰击衬底表面，其中衬底以等角度倾斜地设置在角度上。 当等离子体束轰击衬底表面时，等离子体束中的等离子体离子具有比等离子体束中的等离子体离子更高的动能或更高的通量密度，如果以倾斜方式以该角度轰击衬底，则其形成具有柱结构的膜。

    Field-effect transistor, sensor using it, and production method thereof
    8.
    发明授权
    Field-effect transistor, sensor using it, and production method thereof 有权
    场效应晶体管，使用它的传感器及其制造方法

    公开(公告)号：US07829362B2

    公开(公告)日：2010-11-09

    申请号：US11945838

    申请日：2007-11-27

    申请人： Kazuhiko Fukutani ,  Takao Yonehara ,  Hirokatsu Miyata ,  Yohei Ishida ,  Tohru Den

    发明人： Kazuhiko Fukutani ,  Takao Yonehara ,  Hirokatsu Miyata ,  Yohei Ishida ,  Tohru Den

    IPC分类号： H01L21/336

    CPC分类号： G01N27/4146 ,  Y10S438/96 ,  Y10T436/11 ,  Y10T436/114165

    摘要： A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.

    摘要翻译： 通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。 它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。 作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜 氧化物，其具有垂直于衬底的孔。

    Sensor and method of manufacturing the same
    9.
    发明授权
    Sensor and method of manufacturing the same 失效
    传感器及其制造方法

    公开(公告)号：US07749791B2

    公开(公告)日：2010-07-06

    申请号：US12608979

    申请日：2009-10-29

    申请人： Yohei Ishida ,  Hirokatsu Miyata

    发明人： Yohei Ishida ,  Hirokatsu Miyata

    IPC分类号： H01L21/02

    CPC分类号： G01N27/12 ,  Y10T428/249967 ,  Y10T428/249969 ,  Y10T428/24997

    摘要： A sensor comprising a semiconductor film having a plurality of mesopores and containing an oxide, and electrodes electrically connected to the semiconductor film, wherein at least part of surfaces in the mesopores is coated with an organic material.

    摘要翻译： 一种传感器，包括具有多个介孔并含有氧化物的半导体膜，以及电连接到所述半导体膜的电极，其中所述介孔中的至少部分表面涂覆有机材料。