摘要:
A manufacturing method of a liquid crystal optical device is provided including an alignment film forming step of forming an alignment film containing silicon oxide on a substrate, and a liquid crystal cell forming step of disposing a pair of substrates at least one of which the alignment film has been formed on, opposite to each other interposing a liquid crystal therebetween. In the alignment film forming step, the substrate surface is bombarded with a plasma beam generated by vacuum arc discharge using a cathode containing silicon, where the substrate is disposed on the course of the plasma beam obliquely with an angle. When the plasma beam bombards the substrate surface, plasma ions in the plasma beam have higher kinetic energy or higher flux density than plasma ions in a plasma beam which, if bombarding the substrate obliquely at the angle, form a film having a column structure.
摘要:
A liquid crystal device has a pair of substrates, an alignment film formed at least on one of the pair of substrates and liquid crystal showing an orientation defined by the alignment film. The alignment film is a carbon film having a cross-sectional structure inclined relative to the direction of the film thickness by a constant angle.
摘要:
A method of forming a film on a substrate is constituted by a step of depositing a material vaporized from an evaporation source onto a surface of a substrate while inclining the surface of the substrate with respect to a direction from the evaporation source to the substrate, and a step of providing the surface of the substrate with an energy depending on a deposition angle.
摘要:
A method for producing an orientation film that causes orientation of a liquid crystal includes a process of vapor depositing an inorganic oxide from an oblique direction on a substrate and forming an obliquely vapor-deposited film composed of a plurality of columnar structural bodies tilted at an angle equal to or greater than 20° from a substrate normal and a process of performing ion beam irradiation onto the plurality of columnar structural bodies constituting the obliquely vapor-deposited film. An ion beam irradiation direction in the ion beam irradiation process is in a plane including a vapor deposition direction of the inorganic oxide and the substrate normal and an angle of the ion beam irradiation direction θIB measured from the direction of the columnar structural bodies is within a range of +50°≦θIB≦+100° (θIB is taken to be positive on a side where the ion beam irradiation direction approaches the substrate normal from the direction of the columnar structural bodies).
摘要:
A liquid crystal device is constituted by a pair of substrates each having thereon an electrode, and a smectic liquid crystal having a plurality of smectic liquid crystal layers disposed between the substrates. The smectic liquid crystal is disposed to form a first region wherein the smectic liquid crystal layers are aligned to have a layer inclination angle smaller than a calculated layer inclination angle based on a temperature-dependent layer spacing-changing characteristic or are aligned in a direction perpendicular to the substrates to form a bookshelf structure, and a second region wherein the smectic liquid crystal layers are aligned to form a chevron structure having a substantial layer inclination angle or having a layer inclination angle substantially equal to a calculated layer inclination angle based on a temperature-dependent layer spacing-changing characteristic. The liquid crystal device having the first an second regions described above is effective in improving a contrast ratio and a driven margin parameter.
摘要:
A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.
摘要:
A sensor comprising a semiconductor film having a plurality of mesopores and containing an oxide, and electrodes electrically connected to the semiconductor film, wherein at least part of surfaces in the mesopores is coated with an organic material.
摘要:
A sensor comprising a semiconductor film having a plurality of mesopores and containing an oxide, and electrodes electrically connected to the semiconductor film, wherein at least part of surfaces in the mesopores is coated with an organic material.
摘要:
A sensor comprising a semiconductor film having a plurality of mesopores and containing an oxide, and electrodes electrically connected to the semiconductor film, wherein at least part of surfaces in the mesopores is coated with an organic material.
摘要:
The object is to fabricate a novel organic semiconductor element which can effectively utilize the main-chain conduction of a conjugated high molecular compound having semiconductor-like properties. Provided is an electronic element which contains, as components, a pair of electrodes which is formed on a substrate, a mesoporous film in which tubular mesopores, which are orientation controlled in one direction, are formed, the mesoporous film being formed between the electrodes so as to be in contact with the electrodes, a conjugated high molecular compound held in the tubular mesopores, and a third electrode which is electrically insulated from the conjugated high molecular compound and is in contact with the mesoporous film.