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公开(公告)号：US06210997B1
公开(公告)日：2001-04-03
申请号：US09362040
申请日：1999-07-28
IPC分类号： H01L21336
CPC分类号： H01L27/1277 , H01L21/28158 , H01L27/1214 , H01L29/458 , H01L29/4908 , H01L29/66757
摘要： A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide-film and the second oxide film are used as a gate insulating film.
摘要翻译： 一种制造半导体器件的方法包括以下步骤：在衬底上形成半导体膜，在氧化气氛中用加热或照射的半导体膜氧化所述半导体膜的表面，并进一步在氧化表面上沉积氧化膜 的半导体膜。 第一氧化膜与半导体膜具有良好的界面条件，并且如果第一氧化膜和第二氧化物膜用作栅极绝缘膜，则可以改善绝缘栅场效应晶体管的特性。
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公开(公告)号：US5966594A
公开(公告)日：1999-10-12
申请号：US768465
申请日：1996-12-18
IPC分类号： H01L21/28 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/45 , H01L29/49 , H01L21/00
CPC分类号： H01L29/66757 , H01L21/28158 , H01L27/1214 , H01L29/4908 , H01L29/458
摘要： A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide film and the second oxide film are used as a gate insulating film.
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3.发明授权Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films 失效制造其中栅极绝缘体包括两个氧化物膜的薄膜晶体管的方法
公开(公告)号：US5663077A
公开(公告)日：1997-09-02
申请号：US280461
申请日：1994-07-26
CPC分类号： H01L29/66757 , H01L21/28158 , H01L27/1214 , H01L29/4908 , H01L29/458
摘要： A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide film and the second oxide film are used as a gate insulating film.
摘要翻译： 一种制造半导体器件的方法包括以下步骤：在衬底上形成半导体膜，在氧化气氛中用加热或照射的半导体膜氧化所述半导体膜的表面，并进一步在氧化表面上沉积氧化膜 的半导体膜。 第一氧化物膜与半导体膜具有良好的界面条件，并且如果第一氧化物膜和第二氧化物膜用作栅极绝缘膜，则可以改善绝缘栅场效应晶体管的特性。
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公开(公告)号：US06465284B2
公开(公告)日：2002-10-15
申请号：US09779829
申请日：2001-02-09
IPC分类号： H01L2184
CPC分类号： H01L27/1277 , H01L21/28158 , H01L27/1214 , H01L29/458 , H01L29/4908 , H01L29/66757
摘要： A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide film and the second oxide film are used as a gate insulating film.
摘要翻译： 一种制造半导体器件的方法包括以下步骤：在衬底上形成半导体膜，在氧化气氛中用加热或照射的半导体膜氧化所述半导体膜的表面，并进一步在氧化表面上沉积氧化膜 的半导体膜。 第一氧化物膜与半导体膜具有良好的界面条件，并且如果第一氧化物膜和第二氧化物膜用作栅极绝缘膜，则可以改善绝缘栅场效应晶体管的特性。
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公开(公告)号：US06171890B2
公开(公告)日：2001-01-09
申请号：US09421229
申请日：1999-10-20
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/2026
摘要： A method for forming a silicon island used for forming a TFT or thin film diode comprises the step of pattering a silicon film with a photoresist mask. In order to prevent the contamination of the semiconductor film due to the photoresist material, a protective film such as silicon oxide is interposed between the semiconductor film and the photoresist film. Also, the protective film is preferably formed by thermal annealing or light annealing in an oxidizing atmosphere.
摘要翻译： 用于形成用于形成TFT或薄膜二极管的硅岛的方法包括用光致抗蚀剂掩模图案化硅膜的步骤。 为了防止由于光致抗蚀剂材料而导致的半导体膜的污染，在半导体膜和光致抗蚀剂膜之间插入氧化硅等保护膜。 此外，保护膜优选通过在氧化气氛中的热退火或轻退火形成。
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公开(公告)号：US06599359B2
公开(公告)日：2003-07-29
申请号：US09734034
申请日：2000-12-12
IPC分类号： C30B3302
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/2026
摘要： A method for forming a silicon island used for forming a TFT or thin film diode comprises the step of pattering a silicon film with a photoresist mask. In order to prevent the contamination of the semiconductor film due to the photoresist material, a protective film such as silicon oxide is interposed between the semiconductor film and the photoresist film. Also, the protective film is preferably formed by thermal annealing or light annealing in an oxidizing atmosphere.
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公开(公告)号：US5985704A
公开(公告)日：1999-11-16
申请号：US568792
申请日：1995-12-07
CPC分类号： H01L21/2026 , H01L21/2022
摘要： A method for forming a silicon island used for forming a TFT or thin film diode comprises the step of pattering a silicon film with a photoresist mask. In order to prevent the contamination of the semiconductor film due to the photoresist material, a protective film such as silicon oxide is interposed between the semiconductor film and the photoresist film. Also, the protective film is preferably formed by thermal annealing or light annealing in an oxidizing atmosphere.
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8.发明授权公开(公告)号：US06329229B1
公开(公告)日：2001-12-11
申请号：US08962841
申请日：1997-11-03
IPC分类号： H01L21336
CPC分类号： H01L21/67167 , H01L21/268 , H01L21/67196 , H01L21/67213 , H01L21/84 , H01L29/66757
摘要： A multi-chamber system for providing a process of a high degree of cleanliness in fabricating semiconductor devices such as semiconductor integrated circuits. The system comprises a plurality of vacuum apparatus (e.g., a film formation apparatus, an etching apparatus, a thermal processing apparatus, and a preliminary chamber) for fabrication of semiconductor devices. At least one these vacuum apparatuses is a laser.
摘要翻译： 一种用于在制造半导体集成电路的半导体器件中提供高度清洁度的工艺的多室系统。 该系统包括用于制造半导体器件的多个真空装置（例如，成膜装置，蚀刻装置，热处理装置和预备室）。 这些真空装置中至少有一个是激光。
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公开(公告)号：US07097712B1
公开(公告)日：2006-08-29
申请号：US08691434
申请日：1996-08-02
CPC分类号： H01L29/66757 , H01L21/268 , H01L27/1214 , Y10S118/90 , Y10S438/907 , Y10S438/908
摘要： A multi-chamber system for providing a process of a high degree of cleanliness in fabricating semiconductor devices such as semiconductor integrated circuits. The system comprises a plurality of vacuum apparatus (e.g., a film formation apparatus, an etching apparatus, a thermal processing apparatus, and a preliminary chamber) for fabrication of semiconductor devices. At least one of these vacuum apparatuses is a laser.
摘要翻译： 一种用于在制造半导体集成电路的半导体器件中提供高度清洁度的工艺的多室系统。 该系统包括用于制造半导体器件的多个真空装置（例如，成膜装置，蚀刻装置，热处理装置和预备室）。 这些真空装置中的至少一个是激光。
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10.发明授权公开(公告)号：US06897100B2
公开(公告)日：2005-05-24
申请号：US08799506
申请日：1997-02-12
IPC分类号： C30B23/00 , H01L21/322 , H01L21/324 , H01L21/84
CPC分类号： H01L21/67173 , C23C14/48 , C23C14/5813 , C23C16/56 , H01L21/67069 , H01L21/67115 , H01L21/67213 , Y10S438/908
摘要： A multi-chamber system for providing a process of a high degree of cleanliness in fabricating semiconductor devices such as semiconductor integrated circuits. The system comprises a plurality of vacuum apparatus (e.g., a film formation apparatus, an etching apparatus, a thermal processing apparatus, and a preliminary chamber) for fabrication of semiconductor devices. At least one of these vacuum apparatuses is a laser.
摘要翻译： 一种用于在制造半导体集成电路的半导体器件中提供高度清洁度的工艺的多室系统。 该系统包括用于制造半导体器件的多个真空装置（例如，成膜装置，蚀刻装置，热处理装置和预备室）。 这些真空装置中的至少一个是激光。
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