摘要:
A fabrication method of a thin film transistor array substrate includes a step of forming a gate insulation film, a semiconductor layer, an ohmic layer, and a metal film on the insulating substrate on which the gate line is formed, a step of forming a resist pattern on the metal film by a photolithography process so that its thickness is thinner on the corresponding section to the semiconductor active layer than on the other sections, a step of etching the metal film to form the source line, the source electrode, and the drain electrode, a step of removing the ohmic layer and the semiconductor layer after removing the resist on the corresponding section to the semiconductor active layer, a step of removing the metal film, and a step of removing the ohmic layer.
摘要:
This invention relates a process for preparing a compound of formula (I) wherein R1 is para-nitrobenzyl or allyl; X is halo; as well as its isomers.
摘要:
An image detector comprises: an active matrix-type TFT array substrate having a pixel area, in which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, a data line, and a bias line; a conversion layer, which is arranged on the TFT array substrate and converts radiation into light; and a conductive cover, which covers the conversion layer, wherein the conductive cover is adhered in an adhesion area in an upper layer than an area, in which at least one of the data line and the bias line extend from the pixel area to each of terminals, and wherein inorganic insulation films configured by at least two layers are formed between the at least one of the data line and the bias line and the adhesion area.
摘要:
A liquid crystal display panel includes: a liquid crystal; a pixel electrode, which applies a voltage to the liquid crystal; a switching device, which applies a voltage to the pixel electrode; a light shield part, which covers an area except for the pixel electrode, and which has an opening facing the pixel electrode; a color material, which is formed to overlap with a whole area of the opening; an inclusion part, which is a part of the light shield part and is adjacent to the color material; a black powder inclusion space, which is covered by the inclusion part; and a black powder, which is included in the black powder inclusion pocket.
摘要:
This invention provides a process for preparing a compound of the formula (I): wherein R1 is H or a hydroxyimino-protecting group; R2 is H, C1-4 alkyl or C1-4 alkoxy; R3 is C1-8 alkyl, C2-8 alkenyl or C3-8 cycloalkyl, and R4 is H, halo, C1-4 alkyl or C1-4 alkoxy, which process comprises the steps of (a) reacting an avermectin B2 derivative with an oxidizing agent to form a 5-oxo compound; (b) allowing the 5-oxo compound to react with a compound of formula R1—O—NH2 wherein R1 is H or a hydroxyimino-protecting group, to form a 5-imino compound; (c) reacting the 5-imino compound with a thionocarbonizing agent to form a 4″, 23-bisthionocarbonyl ester; (d) reacting the 4″, 23-bisthionocarbonyl ester with a deoxygenation agent to form a 4″, 23-dideoxy compound; and (e) reacting the R″, 23-dideoxy compound with an acid to form a compound of the formula (I).
摘要:
This invention relates to a process for the removal of an allyl or allyloxycarbonyl group from an allyl or allyloxycarbonyl group protected compound (such as an allylic ester, carbonate, carbamate, O-allyl derivatives or N-allyl derivatives), which comprises contacting the allyl or allyloxycarbonyl group protected compound with a sulfinic acid compound, in the presence of a palladium catalyst in a reaction-inert solvent. Preferably, the sulfinic acid compound is represented by the formula:X--SO.sub.2 M (I)wherein X is C.sub.1-20 alkyl, substituted C.sub.1-20 alkyl (wherein the substituent(s) are independently halo, nitro, sulfo, oxo, amino, cyano, carboxy, hydroxy or moieties derived therefrom), phenyl, substituted phenyl (wherein the substituent(s) are independently C.sub.1-3 alkyl, halo nitro, sulfo, oxo, amino, cyano, carboxy, hydroxy, acetamido or moieties derived therefrom), furyl or thienyl; and M is hydrogen, an alkali metal or ammonium salt residue. Of these, most preferred sulfinic acid compound is lithium p-toluenesulfinate, sodium p-toluenesulfinate, potassium p-toluenesulfinate, p-toluenesulfinic acid, ammonium p-toluenesulfinate, lithium benzenesulfinate, sodium benzenesulfinate, potassium benzenesulfinate, benzenesulfinic acid or ammonium benzenesulfinate. This invention is well suited to a process for the conversion of an allyl ester of 5R,6S-6-(1R-hydroxyethyl)-2-(1R-oxo-3S-thiolanylthio)-2-penem-3-carboxylic acid to 5R,6S-6-(1R-hydroxyethyl)-2-(1R-oxo-3S-thiolanylthio)-2-penem-3-carboxylic acid.