公开(公告)号：US20120250139A1

公开(公告)日：2012-10-04

申请号：US13419859

申请日：2012-03-14

申请人： Hironobu Abe ,  Nobuhide Yoneya

发明人： Hironobu Abe ,  Nobuhide Yoneya

IPC分类号： G02F1/167

CPC分类号： G02F1/167 ,  F04B19/006 ,  G02B26/0841 ,  G02F1/1343 ,  G03G17/04 ,  H04N5/7425

摘要： Disclosed herein is a display apparatus including first and second substrates, at least one of which has a light transmitting characteristic, as well as first and second electrodes provided on the two mutually facing surfaces of the first and second substrates respectively; and an electrophoretic device provided between the first and second substrates, wherein the first substrate and the first electrode each have an external edge folded back so as to cover at least a portion of a terminal surface of the second substrate.

摘要翻译： 本文公开了一种显示装置，包括分别具有透光特性的第一和第二基板以及设置在第一和第二基板的两个相互面对的表面上的第一和第二电极; 以及设置在所述第一和第二基板之间的电泳装置，其中所述第一基板和所述第一电极各自具有折回的外部边缘，以便覆盖所述第二基板的端子表面的至少一部分。

公开(公告)号：US08705164B2

公开(公告)日：2014-04-22

申请号：US13419859

申请日：2012-03-14

申请人： Hironobu Abe ,  Nobuhide Yoneya

发明人： Hironobu Abe ,  Nobuhide Yoneya

IPC分类号： G02F1/167 ,  F04B19/00 ,  G02B26/08 ,  H04N5/74 ,  G03G17/04

CPC分类号： G02F1/167 ,  F04B19/006 ,  G02B26/0841 ,  G02F1/1343 ,  G03G17/04 ,  H04N5/7425

摘要： Disclosed herein is a display apparatus including first and second substrates, at least one of which has a light transmitting characteristic, as well as first and second electrodes provided on the two mutually facing surfaces of the first and second substrates respectively; and an electrophoretic device provided between the first and second substrates, wherein the first substrate and the first electrode each have an external edge folded back so as to cover at least a portion of a terminal surface of the second substrate.

摘要翻译： 本文公开了一种显示装置，包括分别具有透光特性的第一和第二基板以及设置在第一和第二基板的两个相互面对的表面上的第一和第二电极; 以及设置在所述第一和第二基板之间的电泳装置，其中所述第一基板和所述第一电极各自具有折回的外部边缘，以便覆盖所述第二基板的端子表面的至少一部分。

公开(公告)号：US20130005120A1

公开(公告)日：2013-01-03

申请号：US13610964

申请日：2012-09-12

申请人： Kazumasa Nomoto ,  Nobuhide Yoneya ,  Takahiro Ohe

发明人： Kazumasa Nomoto ,  Nobuhide Yoneya ,  Takahiro Ohe

IPC分类号： H01L51/40

CPC分类号： H01L51/0021 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

摘要： An organic thin film transistor including a substrate with an organic insulating layer; a source and drain electrode layer electro deposited on the substrate; a second metal material source and drain electrode layer covering the first layer, the metal material capable of forming an ohmic contact with an organic semiconductor material lower than the first layer; and an organic semiconductor layer over a region between the source electrode and the drain electrode

摘要翻译： 一种有机薄膜晶体管，包括具有有机绝缘层的衬底; 电沉积在基底上的源极和漏极电极层; 覆盖第一层的第二金属材料源极和漏极电极层，能够与低于第一层的有机半导体材料形成欧姆接触的金属材料; 以及在源电极和漏电极之间的区域上的有机半导体层

公开(公告)号：US20100271353A1

公开(公告)日：2010-10-28

申请号：US12762030

申请日：2010-04-16

申请人： Nobuhide Yoneya

发明人： Nobuhide Yoneya

IPC分类号： G06F3/038 ,  H01L51/10 ,  H01L51/40 ,  H01L51/50

CPC分类号： H01L27/283 ,  G02F1/1368 ,  G02F2001/136231 ,  H01L27/3274 ,  H01L51/0508

摘要： A semiconductor device includes first layer wiring including a gate electrode mounted on a substrate; a gate insulating film having an opening that exposes part of the first layer wiring and covering the entire surface of the substrate including the gate electrode; second layer wiring including a source electrode and a drain electrode mounted on the gate insulating film; an insulating partition layer having a first opening that exposes an edge between the source electrode and the drain electrode and a part of the gate insulating film between the source electrode and the drain electrode and a second opening that is aligned with the opening formed in the gate insulating film; and an organic semiconductor layer disposed across the source electrode and the drain electrode at the bottom surface of the first opening formed in the partition layer.

摘要翻译： 半导体器件包括：第一层布线，其包括安装在基板上的栅电极; 栅极绝缘膜，具有露出所述第一层布线的一部分并覆盖包括所述栅电极的所述基板的整个表面的开口; 第二层布线，包括安​​装在栅极绝缘膜上的源电极和漏电极; 绝缘分隔层，其具有露出源电极和漏电极之间的边缘的第一开口和源电极和漏电极之间的栅极绝缘膜的一部分，以及与形成在栅极中的开口对准的第二开口 绝缘膜; 以及在形成在分隔层中的第一开口的底面上的源极电极和漏极电极之间设置的有机半导体层。

公开(公告)号：US08395147B2

公开(公告)日：2013-03-12

申请号：US13448969

申请日：2012-04-17

申请人： Mao Katsuhara ,  Nobuhide Yoneya

发明人： Mao Katsuhara ,  Nobuhide Yoneya

IPC分类号： H01L51/00

CPC分类号： H01L27/3274 ,  B82Y10/00 ,  H01L51/0011 ,  H01L51/0017 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/004 ,  H01L51/0046 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/0545 ,  H01L51/102 ,  H01L51/105

摘要： The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern is formed on a substrate. An electrode material film is formed on the substrate so as to cover the organic semiconductor pattern. A resist pattern is formed on the electrode material film. By wet etching using the resist pattern as a mask, the electrode material film is patterned. By the process, a source electrode and a drain electrode are formed.

摘要翻译： 本发明提供一种通过易于适用于增加面积而不损坏有机半导体图案的方法来制造具有抑制劣化的顶部接触结构的薄膜晶体管的方法。 有机半导体图案形成在基板上。 在基板上形成电极材料膜以覆盖有机半导体图案。 在电极材料膜上形成抗蚀剂图案。 通过使用抗蚀剂图案作为掩模的湿蚀刻，对电极材料膜进行图案化。 通过该过程，形成源电极和漏电极。

公开(公告)号：US08008115B2

公开(公告)日：2011-08-30

申请号：US12627434

申请日：2009-11-30

申请人： Mao Katsuhara ,  Nobuhide Yoneya

发明人： Mao Katsuhara ,  Nobuhide Yoneya

IPC分类号： H01L51/40

CPC分类号： H01L27/3274 ,  B82Y10/00 ,  H01L51/0011 ,  H01L51/0017 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/004 ,  H01L51/0046 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/0545 ,  H01L51/102 ,  H01L51/105

摘要： The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern is formed on a substrate. An electrode material film is formed on the substrate so as to cover the organic semiconductor pattern. A resist pattern is formed on the electrode material film. By wet etching using the resist pattern as a mask, the electrode material film is patterned. By the process, a source electrode and a drain electrode are formed.

摘要翻译： 本发明提供一种通过易于适用于增加面积而不损坏有机半导体图案的方法来制造具有抑制劣化的顶部接触结构的薄膜晶体管的方法。 有机半导体图案形成在基板上。 在基板上形成电极材料膜以覆盖有机半导体图案。 在电极材料膜上形成抗蚀剂图案。 通过使用抗蚀剂图案作为掩模的湿蚀刻，对电极材料膜进行图案化。 通过该过程，形成源电极和漏电极。

公开(公告)号：US07767488B2

公开(公告)日：2010-08-03

申请号：US11424672

申请日：2006-06-16

申请人： Nobuhide Yoneya

发明人： Nobuhide Yoneya

IPC分类号： H01L51/40

CPC分类号： H01L51/0545 ,  H01L51/0012 ,  H01L51/0558

摘要： A method for making an organic field effect transistor of a bottom gate/bottom contact type or a bottom gate/top contact type is provided. The method comprises (a) forming a gate electrode 12 on a support and forming a gate insulating layer 13 on the support 10 and the gate electrode 12, and (b) forming, on the gate insulating layer 13, source/drain electrodes 14 and an organic semiconductor region 15 made of an organic semiconductor material and constituting a channel forming region 16. The gate insulating layer 12 is formed by applying a solution of a mixture of an insulating polymer material and a surface treating agent onto the support 10 and the gate electrode 12 and drying. The organic field effect transistors are also provided.

摘要翻译： 提供了制造底栅/底接触型或底栅/顶接触型的有机场效应晶体管的方法。 该方法包括：（a）在支撑体上形成栅电极12并在支撑体10和栅电极12上形成栅极绝缘层13，以及（b）在栅极绝缘层13上形成源/漏电极14和 由有机半导体材料制成并构成沟道形成区域16的有机半导体区域15.栅极绝缘层12通过将绝缘聚合物材料和表面处理剂的混合物溶液施加到载体10和浇口 电极12并干燥。 还提供了有机场效应晶体管。

公开(公告)号：US20100032660A1

公开(公告)日：2010-02-11

申请号：US12510408

申请日：2009-07-28

申请人： Kazumasa Nomoto ,  Nobuhide Yoneya ,  Takahiro Ohe

发明人： Kazumasa Nomoto ,  Nobuhide Yoneya ,  Takahiro Ohe

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L51/0021 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

摘要： An organic thin film transistor is disclosed, including a substrate formed of an organic insulating layer, a first layer deposited on the substrate using a plating technique to be used for forming a source electrode and a drain electrode, a second layer of a metal material deposited covering the first layer using a further plating technique to be used for forming the source electrode and the drain electrode with the metal material capable of forming an ohmic contact with an organic semiconductor material lower than the first layer, and an organic semiconductor layer over a region between the source electrode and the drain electrode, which are each formed with the first layer and the second layer. Also disclosed is an electric device provided with the organic thin film transistor.

摘要翻译： 公开了一种有机薄膜晶体管，其包括由有机绝缘层形成的基板，使用用于形成源电极和漏电极的镀覆技术沉积在基板上的第一层，沉积的金属材料的第二层 使用另外的镀覆技术覆盖第一层，以用于形成源电极和漏电极，其中金属材料能够与低于第一层的有机半导体材料形成欧姆接触，并且在区域上形成有机半导体层 在源电极和漏电极之间，每个都形成有第一层和第二层。 还公开了设置有有机薄膜晶体管的电气装置。

公开(公告)号：US08829791B2

公开(公告)日：2014-09-09

申请号：US13588480

申请日：2012-08-17

申请人： Nobuhide Yoneya ,  Hirofumi Nakamura ,  Toru Tanikawa ,  Satoshi Kumon

发明人： Nobuhide Yoneya ,  Hirofumi Nakamura ,  Toru Tanikawa ,  Satoshi Kumon

IPC分类号： G02F1/1339 ,  G02F1/1333 ,  H01J1/62

CPC分类号： G02F1/1333 ,  G02F1/133305 ,  G02F2001/133311 ,  G02F2201/501 ,  G02F2202/28

摘要： A display includes: a display substrate including a liquid crystal layer; a driving substrate driving the display substrate; and a damp-proof layer continuously provided along a top face and side faces of the display substrate, and a top face of the driving substrate.

摘要翻译： 显示器包括：包括液晶层的显示基板; 驱动显示基板的驱动基板; 以及沿着显示基板的顶面和侧面以及驱动基板的顶面连续设置的防潮层。

公开(公告)号：US08569745B2

公开(公告)日：2013-10-29

申请号：US12920723

申请日：2009-01-08

申请人： Nobuhide Yoneya

发明人： Nobuhide Yoneya

IPC分类号： H01L29/08

CPC分类号： H01L51/10 ,  H01L51/0545 ,  H01L51/107

摘要： A semiconductor device includes an organic semiconductor layer, and a protective film. The protective film covers a side wall of the organic semiconductor layer. An insulating partition wall is disposed on the substrate. The partition wall includes an opening. The organic semiconductor layer includes a first portion that is disposed within the opening of the partition wall. The protective film fills the inside of the opening of the partition wall.

摘要翻译： 半导体器件包括有机半导体层和保护膜。 保护膜覆盖有机半导体层的侧壁。 绝缘分隔壁设置在基板上。 分隔壁包括开口。 有机半导体层包括设置在分隔壁的开口内的第一部分。 保护膜填充分隔壁开口的内部。