摘要:
It is an object of the invention to provide a method of reducing flicker noises in an X-Y address type solid-state image pickup device for reducing flicker noises generated by a fluorescent light for room illumination when taking a picture in door.A configuration is provided in which signal storage time ts resulting in no flicker noise under a fluorescent lamp having an emission frequency of 120 Hz is preset (step S1); average luminance of image data is calculated for each frame in a predetermined average luminance detection area allocated in the frame (step S2); a difference in average luminance is calculated between frames (step S3); and the signal storage time ts is changed based on the difference in luminance (steps S4, S5 and S6).
摘要:
A solid-state imaging device includes an image sensor configured to output image data generated by image sensing elements together with a timing signal, and an image processing unit configured to output the image data supplied from the image sensor having undergone predetermined signal processing a predetermined delay time after a timing indicated by the timing signal, the image sensor further configured to make the timing signal indicate a first timing that is at least the processing delay time earlier than a second timing indicative of a start of a valid period of the image data, and to output dummy data from the first timing to the start of the valid period of the image data.
摘要:
A flicker noise detecting method that shortens the time for detecting flicker noise. The method sets two of a plurality of horizontal lines forming a frame as average brightness calculation regions that are separated from each other by the predetermined number of the horizontal lines, calculates an average brightness of the two average brightness calculation regions for each of three frames, multiplies each average brightness by a product sum calculation coefficient, and adds the products to generate a sum and generate a detection signal of flicker noise based on the sum. The product sum calculation coefficient is obtained by plotting one cycle of a sine wave and one cycle of a cosine wave at intervals of π/3.
摘要:
A semiconductor integrated circuit includes a check unit which compares a value of a pixel of interest with values of neighboring pixels contained in an image signal supplied from an image sensor, and determines based on the comparison whether the pixel of interest is defective, and a defect correcting unit which corrects the value of the pixel of interest by using values of surrounding pixels in response to the determination by the check unit that the pixel of interest is defective.
摘要:
A solution of precursor of a pyroelectric material, e.g. BaSrTiO.sub.3, is coated on a surface of a silicon wafer having an array of mesas corresponding to infrared sensor elements to be formed thereon, and the pyroelectric material precursor coating is dried and then is subjected to a heat treatment for converting thereof into a pyroelectric thin film (sol-gel process). The internal stress in the pyroelectric thin film formed as thick as 1 .mu.m by repeating the process concentrates in the region (groove) between the mesas, hence cracks occurring in the film in connection with the stress are limited within the region and the portions of the film on the mesas can be free from the cracks. The pyroelectric thin film in the groove is selectively removed. An infrared image sensing device comprising sensor elements of uniform characteristics and high reliability is provided.
摘要:
A method for calculating a shift amount of a microlens from a position of a light receiving element arranged in a pixel of an image pickup element is provided. The microlens collects incident light from an image pickup lens. The method comprises: acquiring an incident angle characteristic value indicating a relation between an arranged position of the pixel and an incident angle of the incident light to the pixel; calculating a sampled shift amount of the microlens from the position of the light receiving element corresponding the incident angle characteristic value based on light collection efficiency of the incident light; approximating the sampled shift amount by a second or higher order function to calculate a shift amount characteristic function indicating a relation between the arranged position and the shift amount; and calculating the shift amount of the pixel using the shift amount characteristic function.
摘要:
A semiconductor integrated circuit includes a check unit which compares a value of a pixel of interest with values of neighboring pixels contained in an image signal supplied from an image sensor, and determines based on the comparison whether the pixel of interest is defective, and a defect correcting unit which corrects the value of the pixel of interest by using values of surrounding pixels in response to the determination by the check unit that the pixel of interest is defective.
摘要:
A semiconductor integrated circuit includes a check unit which compares a value of a pixel of interest with values of neighboring pixels contained in an image signal supplied from an image sensor, and determines based on the comparison whether the pixel of interest is defective, and a defect correcting unit which corrects the value of the pixel of interest by using values of surrounding pixels in response to the determination by the check unit that the pixel of interest is defective.
摘要:
A semiconductor integrated circuit includes a differential calculating unit which obtains a differential between a value of a pixel of interest and values of surrounding pixels contained in an image signal supplied from an image sensor, a dead-zone generating unit which defines a predetermined range of pixel values, and a comparison unit which checks whether the differential falls outside the predetermined range, wherein contour enhancement is applied to the pixel of interest in response to a determination by the comparison unit that the differential falls outside the predetermined range.