公开(公告)号：US5589687A

公开(公告)日：1996-12-31

申请号：US413958

申请日：1995-03-30

申请人： Satoshi Kawata ,  Masaji Dohi ,  Yoichiro Sakachi ,  Hiroshi Daiku

发明人： Satoshi Kawata ,  Masaji Dohi ,  Yoichiro Sakachi ,  Hiroshi Daiku

IPC分类号： G01J1/02 ,  G01J5/34 ,  H01L37/02

CPC分类号： H01L37/02 ,  G01J5/34

摘要： An infrared detection device has a substrate with a plurality of hollow mesas and a pyroelectric thin film formed on the surface having the mesas.

摘要翻译： 红外线检测装置具有多个中空台面的基板和在具有台面的表面上形成的热电薄膜。

公开(公告)号：US5891512A

公开(公告)日：1999-04-06

申请号：US919233

申请日：1997-08-28

申请人： Satoshi Kawata ,  Masaji Dohi ,  Yoichiro Sakachi ,  Hiroshi Daiku

发明人： Satoshi Kawata ,  Masaji Dohi ,  Yoichiro Sakachi ,  Hiroshi Daiku

IPC分类号： G01J1/02 ,  G01J5/34 ,  H01L37/02 ,  B05D5/12

CPC分类号： H01L37/02 ,  G01J5/34

摘要： A solution of precursor of a pyroelectric material, e.g. BaSrTiO.sub.3, is coated on a surface of a silicon wafer having an array of mesas corresponding to infrared sensor elements to be formed thereon, and the pyroelectric material precursor coating is dried and then is subjected to a heat treatment for converting thereof into a pyroelectric thin film (sol-gel process). The internal stress in the pyroelectric thin film formed as thick as 1 .mu.m by repeating the process concentrates in the region (groove) between the mesas, hence cracks occurring in the film in connection with the stress are limited within the region and the portions of the film on the mesas can be free from the cracks. The pyroelectric thin film in the groove is selectively removed. An infrared image sensing device comprising sensor elements of uniform characteristics and high reliability is provided.

摘要翻译： 热电材料的前体溶液，例如 BaSrTiO3涂覆在具有对应于要形成在其上的红外线传感器元件的台面阵列的硅晶片的表面上，并且将热电材料前体涂层干燥，然后进行热处理以将其转化为热电薄膜 （溶胶 - 凝胶法）。 通过重复该过程形成的厚度为1μm的热电薄膜的内部应力集中在台面之间的区域（凹槽）中，因此在与应力有关的膜中产生的裂纹在区域内部分被限制 台面上的电影可以摆脱裂缝。 选择性地去除槽中的热电薄膜。 提供了包括具有均匀特性和高可靠性的传感器元件的红外图像感测装置。

公开(公告)号：US5431738A

公开(公告)日：1995-07-11

申请号：US202584

申请日：1994-02-28

申请人： Satoshi Murakami ,  Yoichiro Sakachi ,  Hironori Nishino ,  Tetsuo Saito ,  Kenji Maruyama

发明人： Satoshi Murakami ,  Yoichiro Sakachi ,  Hironori Nishino ,  Tetsuo Saito ,  Kenji Maruyama

IPC分类号： C30B25/02 ,  C30B25/14 ,  C23C16/00

CPC分类号： C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/48

摘要： A method or growing a mixed compound semiconductor layer comprises the following steps of: providing a reaction chamber comprising a rotatable substrate stage, a plurality of nozzles aligned in a line, the nozzle being arranged vertical to a substrate surface, and a mechanism for moving the substrate stage at least in the nozzle alignment direction and parallel to the substrate surface; disposing the substrate on the substrate stage which is rotated around its axis; flowing a mixed source gas into the reaction chamber through the nozzles, thereby a flow rate of the most reactive gas in the mixed source gas flowing through each nozzle being controlled to increase depending on a distance between the center axis of the substrate rotation and the nozzle; and heating the substrate. An apparatus for applying the above method comprises a particular feature for moving the substrate stage.

摘要翻译： 一种方法或生长混合化合物半导体层包括以下步骤：提供反应室，该反应室包括可旋转的基底载物台，多个沿一行排列的喷嘴，该喷嘴垂直于基底表面布置， 至少在喷嘴对准方向上并平行于衬底表面; 将衬底设置在围绕其轴线旋转的衬底台上; 通过喷嘴将混合源气体流入反应室，从而根据基板旋转的中心轴线与喷嘴之间的距离来控制流过每个喷嘴的混合源气体中最活性气体的流量 ; 并加热衬底。 用于应用上述方法的装置包括用于移动衬底台的特定特征。

公开(公告)号：US5952703A

公开(公告)日：1999-09-14

申请号：US576091

申请日：1995-12-21

申请人： Satoshi Murakami ,  Tetsuo Saito ,  Hironori Nishino ,  Yoichiro Sakachi ,  Tohru Okamoto ,  Kenji Maruyama

发明人： Satoshi Murakami ,  Tetsuo Saito ,  Hironori Nishino ,  Yoichiro Sakachi ,  Tohru Okamoto ,  Kenji Maruyama

IPC分类号： H01L29/84 ,  H01L21/363 ,  H01L21/365 ,  H01L29/22 ,  H01L31/0264 ,  H01L31/10 ,  H01L31/103 ,  H01L31/18 ,  H01L31/00 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L31/1836 ,  H01L31/1032 ,  H01L31/1832 ,  Y02E10/50

摘要： A semiconductor device having: a support substrate having an upper surface; a HgTe layer formed on the support substrate; and a HgCdTe layer directly formed on the HgTe layer. A semiconductor device of another type having: a support substrate having an exposed upper surface tilted from the (100) plane of a single crystal with a diamond structure by a certain angle, along a direction offset by an angle larger than 0.degree. and smaller than 45.degree. from the �011! direction in the (100) plane; a group III-V compound semiconductor layer formed on the support substrate; and a group II-VI compound semiconductor layer formed on the group III-V compound semiconductor layer.

摘要翻译： 一种半导体器件，具有：具有上表面的支撑基板; 形成在支撑基板上的HgTe层; 和直接形成在HgTe层上的HgCdTe层。 一种另一种类型的半导体器件，具有：支撑基板，其具有从具有菱形结构的单晶的（100）面倾斜一定角度的暴露的上表面，沿着大于0°的角度偏移的方向，并且小于 （100）面的[011]方向45°; 形成在所述支撑基板上的III-V族化合物半导体层; 以及形成在III-V族化合物半导体层上的II-VI族化合物半导体层。

公开(公告)号：US06218212B1

公开(公告)日：2001-04-17

申请号：US08198641

申请日：1994-02-18

申请人： Tetsuo Saito ,  Hironori Nishino ,  Satoshi Murakami ,  Yoichiro Sakachi

发明人： Tetsuo Saito ,  Hironori Nishino ,  Satoshi Murakami ,  Yoichiro Sakachi

IPC分类号： H01L2100

CPC分类号： C23C16/45504 ,  C23C16/306 ,  C23C16/4482 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45591 ,  C30B25/02 ,  C30B25/10 ,  C30B25/14 ,  C30B29/48

摘要： An apparatus for growing a mixed compound semiconductor layer utilizing three or more source gases. The apparatus includes a horizontal type reactor chamber. The reactor chamber includes a partition plate separating an upstream region of the reactor chamber into an upper region and a lower region. The upper and lower regions are joined together forming a growth region in a downstream region of the reactor chamber. First and second inlet ports are provided at an upstream end of the lower region for admitting first and second source gases, respectively. A third inlet port is provided at an upstream end of the upper region for admitting a third source gas. An outlet port is provided at a downstream end of the growth region for exhaust. A substrate stage is arranged in the growth region so that the substrate surface is exposed to the growth region and forms a smooth surface for allowing a laminar gas flow.

摘要翻译： 一种利用三种或更多种源气生长混合化合物半导体层的装置。 该装置包括一个卧式反应室。 反应室包括将反应器室的上游区分成上部区域和下部区域的分隔板。 上部和下部区域连接在一起，形成在反应室的下游区域中的生长区域。 第一和第二入口端口设置在下部区域的上游端，用于分别允许第一和第二源气体。 第三入口端口设置在上部区域的上游端，用于允许第三源气体。 出口端口设置在用于排气的生长区域的下游端。 衬底台布置在生长区域中，使得衬底表面暴露于生长区域并形成用于允许层流气流的光滑表面。

公开(公告)号：US5324386A

公开(公告)日：1994-06-28

申请号：US850023

申请日：1992-03-12

申请人： Satoshi Murakami ,  Yoichiro Sakachi ,  Hironori Nishino ,  Tetsuo Saito ,  Kenji Maruyama

发明人： Satoshi Murakami ,  Yoichiro Sakachi ,  Hironori Nishino ,  Tetsuo Saito ,  Kenji Maruyama

IPC分类号： C30B25/02 ,  C30B25/14 ,  C30B25/10

CPC分类号： C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/48

摘要： A method of growing a mixed compound semiconductor layer comprises the following steps of: providing a reaction chamber comprising a rotatable substrate stage, a plurality of nozzles aligned in a line, the nozzle being arranged vertical to a substrate surface, and a mechanism for moving the substrate stage at least in the nozzle alignment direction and parallel to the substrate surface; disposing the substrate on the substrate stage which is rotated around its axis; flowing a mixed source gas into the reaction chamber through the nozzles, thereby a flow rate of the most reactive gas in the mixed source gas flowing through each nozzle being controlled to increase depending on a distance between the center axis of the substrate rotation and the nozzle; and heating the substrate. An apparatus for applying the above method comprises a particular feature for moving the substrate stage.

摘要翻译： 一种生长混合化合物半导体层的方法包括以下步骤：提供一个反应室，该反应室包括可转动的基底载物台，多个沿一行排列的喷嘴，该喷嘴垂直于基片表面布置， 至少在喷嘴对准方向上并平行于衬底表面; 将衬底设置在围绕其轴线旋转的衬底台上; 通过喷嘴将混合源气体流入反应室，从而控制流过每个喷嘴的混合源气体中最活泼气体的流速，这取决于基板旋转的中心轴线与喷嘴之间的距离 ; 并加热衬底。 用于应用上述方法的装置包括用于移动衬底台的特定特征。