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    Semiconductor device provided with electrically floating control electrode
    1.
    发明授权
    Semiconductor device provided with electrically floating control electrode 失效
    具有电浮动控制电极的半导体装置

    公开(公告)号：US4651189A

    公开(公告)日：1987-03-17

    申请号：US680837

    申请日：1984-12-12

    申请人： Tsutomu Yatsuo ,  Takahiro Nagano ,  Saburo Oikawa ,  Yukimasa Sato ,  Shin Kimura ,  Hiroshi Fukui

    发明人： Tsutomu Yatsuo ,  Takahiro Nagano ,  Saburo Oikawa ,  Yukimasa Sato ,  Shin Kimura ,  Hiroshi Fukui

    IPC分类号： H01L29/08 ,  H01L29/10 ,  H01L29/167 ,  H01L29/32 ,  H01L29/423 ,  H01L29/744 ,  H01L29/74

    CPC分类号： H01L29/744 ,  H01L29/0804 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/1004 ,  H01L29/102 ,  H01L29/167 ,  H01L29/32 ,  H01L29/42304 ,  H01L29/42308

    摘要： A gate turn-off thyristor and a transistor are disclosed, each of which comprises: a semiconductor substrate including at least three semiconductor layers between a pair of principal surfaces, adjacent ones of the semiconductor layers being different in conductivity type from each other, a first one of the semiconductor layers being formed of at least one strip-shaped region with a constant width, a second one of the semiconductor layers being exposed to a first principal surface of the semiconductor substrate together with the strip-shaped region; a first main electrode kept in ohmic contact with the strip-shaped region at the first principal surface; a first control electrode kept in ohmic contact with the second semiconductor layer on one side of the strip-shaped region in the direction of the width thereof and connected directly to a control terminal; a second control electrode kept in ohmic contact with the second semiconductor layer on the other side of the strip-shaped region in the direction of the width thereof and connected to the control terminal through the first control electrode and the resistance of the second semiconductor layer between the first control electrode and the second control electrode; a second main electrode kept in ohmic contact with a second principal surface of the semiconductor substrate; and means provided in the semiconductor substrate for accelerating the spatial biasing of a conductive region to the other side of the strip-shaped region in the direction of the width thereof when a current flowing across the semiconductor substrate is cut off, thereby enlarging the area of safety operation.

    摘要翻译： 公开了一种栅极截止晶闸管和晶体管，每个晶体管包括：半导体衬底，其在一对主表面之间包括至少三个半导体层，相邻的半导体层之间的导电类型彼此不同，第一 一个半导体层由至少一个具有恒定宽度的条形区域形成，第二个半导体层与条形区域一起暴露于半导体衬底的第一主表面; 第一主电极与第一主表面处的带状区域欧姆接触; 第一控制电极在带状区域的宽度方向上与第二半导体层保持欧姆接触，并直接连接到控制端子; 第二控制电极在带状区域的另一侧沿其宽度方向与第二半导体层欧姆接触，并且通过第一控制电极连接到控制端子，并且第二控制电极与第二半导体层之间的电阻 所述第一控制电极和所述第二控制电极; 与所述半导体衬底的第二主表面保持欧姆接触的第二主电极; 以及设置在半导体衬底中的装置，用于当切断流过半导体衬底的电流时，在导电区域的宽度方向上将导电区域的空间偏置加速到带状区域的另一侧，从而扩大 安全运行。

    Semiconductor device with floating remote gate turn-off means
    2.
    发明授权
    Semiconductor device with floating remote gate turn-off means 失效
    半导体器件具有浮动远程门极关闭手段

    公开(公告)号：US4646122A

    公开(公告)日：1987-02-24

    申请号：US585606

    申请日：1984-03-02

    申请人： Shin Kimura ,  Hiroshi Fukui ,  Hisao Amano ,  Tsutomu Yatsuo ,  Saburo Oikawa ,  Takahiro Nagano

    发明人： Shin Kimura ,  Hiroshi Fukui ,  Hisao Amano ,  Tsutomu Yatsuo ,  Saburo Oikawa ,  Takahiro Nagano

    IPC分类号： H01L29/423 ,  H01L29/74

    CPC分类号： H01L29/42304 ,  H01L29/42308

    摘要： A semiconductor device such as a transistor or gate turn-off thyristor provided with a control electrode for improving the current cut-off performance, is disclosed in which an emitter layer of a semiconductor substrate is formed of a plurality of strip-shaped regions, a base layer adjacent to the strip-shaped regions is exposed to one principal surface of the semiconductor substrate together with the strip-shaped regions, one main electrode is provided on each strip-shaped region, first and second control electrodes are provided on the base layer, on one and the other sides of each strip-shaped region viewed in the direction of the width thereof, respectively, the other main electrode is provided on the second principal surface of the semiconductor substrate, and a gate terminal is not connected to the first control electrode but connected to the second control electrode, in order to draw out carriers unequally by the first and second control electrodes at a turn-off period. At the initial stage of turn-off action, carriers are drawn out mainly by the second control terminal, and a conductive region contracts so as to be limited to the first control electrode side. At the final stage of turn-off action, carriers are drawn out considerably by the first control electrode, to complete the turn-off action.

    摘要翻译： 公开了一种半导体器件，例如晶体管或栅极截止晶闸管，其设置有用于提高电流截止性能的控制电极，其中半导体衬底的发射极层由多个条形区域形成， 与带状区域相邻的基底层与条状区域一起暴露于半导体衬底的一个主表面，在每个条形区域上设置一个主电极，在基底层上设置第一和第二控制电极 在从宽度方向观察的每个条形区域的一侧和另一侧上分别设置在该半导体衬底的第二主表面上，另一个主电极没有连接到第一 控制电极，但是连接到第二控制电极，以便在关断周期期间由第一和第二控制电极不相等地引出载流子。 在关断动作的初始阶段，主要由第二控制端子引出载体，并且导电区域收缩以限于第一控制电极侧。 在关断动作的最后阶段，载体被第一控制电极显着地拉出，以完成关断动作。

    Thyristor with switchable capacitor between auxiliary thyristor cathode and main thyristor gate regions
    3.
    发明授权
    Thyristor with switchable capacitor between auxiliary thyristor cathode and main thyristor gate regions 失效
    辅助晶闸管阴极和主晶闸管栅极区域之间具有可切换电容器的晶闸管

    公开(公告)号：US4315274A

    公开(公告)日：1982-02-09

    申请号：US160567

    申请日：1980-06-17

    申请人： Hiroshi Fukui ,  Shin Kimura

    发明人： Hiroshi Fukui ,  Shin Kimura

    IPC分类号： H01L29/74

    CPC分类号： H01L29/7408 ,  H01L29/7428

    摘要： A thyristor comprising a main thyristor and an auxiliary thrysitor, wherein a capacitor is connected between the cathode electrode of the auxiliary thyristor and the gate electrode of the main thyristor so that electrical or thermal injury or breakdown in the auxiliary thyristor and in the vicinity thereof can be prevented and that the di/dt capability of the thyristor can be increased.

    摘要翻译： 一种包括主晶闸管和辅助晶体管的晶闸管，其中电容器连接在辅助晶闸管的阴极和主晶闸管的栅极之间，使得辅助晶闸管及其附近的电或热损伤或击穿可以 并且可以提高晶闸管的di / dt能力。

    Amplified gate semiconductor controlled rectifier with reduced lifetime in auxiliary thyristor portion
    4.
    发明授权
    Amplified gate semiconductor controlled rectifier with reduced lifetime in auxiliary thyristor portion 失效
    放大门半导体可控整流器，辅助晶闸管部分寿命缩短

    公开(公告)号：US4214254A

    公开(公告)日：1980-07-22

    申请号：US882332

    申请日：1978-03-01

    申请人： Shin Kimura ,  Hiroshi Fukui ,  Yoshio Terasawa

    发明人： Shin Kimura ,  Hiroshi Fukui ,  Yoshio Terasawa

    IPC分类号： H01L29/74

    CPC分类号： H01L29/7428

    摘要： A semiconductor controlled rectifier comprising an auxiliary thyristor region turned on by a gating signal and a main thyristor region turned on by being gated by the turn-on current flowing through the auxiliary thyristor region, wherein the life time of carriers in the auxiliary thyristor region is made shorter than that of the carriers in the main thyristor region.

    摘要翻译： 一种半导体可控整流器，包括通过门控信号导通的辅助晶闸管区域和通过流经辅助晶闸管区域的导通电流而导通的主晶闸管区域，其中辅助晶闸管区域中的载流子的寿命为 比主晶闸管区域的载流子短。

    Gate circuit for thyristors
    5.
    发明授权
    Gate circuit for thyristors 失效
    晶闸管门电路

    公开(公告)号：US4417156A

    公开(公告)日：1983-11-22

    申请号：US238605

    申请日：1981-02-26

    申请人： Hiroshi Fukui ,  Shin Kimura ,  Kenichi Onda ,  Hisao Amano

    发明人： Hiroshi Fukui ,  Shin Kimura ,  Kenichi Onda ,  Hisao Amano

    IPC分类号： H02M1/08 ,  H03K17/73 ,  H03K17/72

    CPC分类号： H03K17/73 ,  H02M1/08

    摘要： A gate circuit for a thyristor is disclosed which includes a power supply for feeding gate-on current through a gate and cathode of the thyristor, a switching circuit connected in series with the power supply to turn the gate-on current on or off, and a diode connected between a gate ignition signal input terminal of said switching circuit and the anode of said thyristor with the cathode of said diode being coupled to said anode of said thyristor and the anode of said diode coupled to said switching circuit.

    摘要翻译： 公开了一种用于晶闸管的栅极电路，其包括用于馈送通过晶闸管的栅极和阴极的栅极导通电流的电源，与电源串联连接的开关电路以打开或关闭导通电流，以及 连接在所述开关电路的栅极点火信号输入端和所述晶闸管的阳极之间的二极管与所述二极管的阴极耦合到所述晶闸管的所述阳极和连接到所述开关电路的所述二极管的阳极。

    Program, data processing method, and system of same
    7.
    发明授权
    Program, data processing method, and system of same 失效
    程序，数据处理方法和系统

    公开(公告)号：US07664373B2

    公开(公告)日：2010-02-16

    申请号：US10900891

    申请日：2004-07-27

    申请人： Shin Kimura

    发明人： Shin Kimura

    IPC分类号： H04N5/76

    CPC分类号： H04N21/4341 ,  H04N21/2368 ,  H04N21/4307 ,  H04N21/84

    摘要： A program capable of individually decoding video data and audio data from data storing, mixed together, the video data, the audio data, and attribute data interleaved, wherein an SYS parse routine parses data MXF_D to extract system data SYS; a PIC parse routine parses the data MXF_D to extract video data PIC and decodes the related extracted video data PIC based on system data SYS extracted by the SYS parse routine 61, and an SOU parse routine parses the data MXF_D to extract audio data SOU and decodes the related extracted audio data SOU based on the system data SYS extracted by the SYS parse routine.

    摘要翻译： 一种程序，其能够从数据存储，混合在一起，视频数据，音频数据和交织的属性数据中分别解码视频数据和音频数据，其中SYS解析程序解析数据MXF_D以提取系统数据SYS; PIC解析程序解析数据MXF_D以提取视频数据PIC，并且基于由SYS解析程序61提取的系统数据SYS解码相关提取的视频数据PIC，并且SOU解析程序解析数据MXF_D以提取音频数据SOU并解码 基于通过SYS解析例程提取的系统数据SYS的相关提取的音频数据SOU。

    Program, data processing method, and system of same
    9.
    发明申请
    Program, data processing method, and system of same 失效
    程序，数据处理方法和系统

    公开(公告)号：US20050076028A1

    公开(公告)日：2005-04-07

    申请号：US10901804

    申请日：2004-07-29

    申请人： Shin Kimura

    发明人： Shin Kimura

    IPC分类号： G06F7/00 ,  G06F17/00 ,  G06F17/30 ,  H04N7/24

    CPC分类号： H04N21/435 ,  H04N21/235 ,  H04N21/84 ,  H04N21/85406 ,  Y10S707/99937

    摘要： An MXF parser thread 43 parses data MXF_D, being, mixed together, a plurality of video data PIC, a plurality of audio data SOU, and system data SYS. Then, it generates video file attribute data VFPD concerning the video based on the parsed system data and metadata META and generates video file data VF including the video file attribute data VFPD and the parsed plurality of video data PIC (VIDEO). Further, the audio file data AF is generated too in the same way.

    摘要翻译： MXF解析器线程43解析混合在一起的数据MXF_D，多个视频数据PIC，多个音频数据SOU和系统数据SYS。 然后，基于解析的系统数据和元数据META生成与视频相关的视频文件属性数据VFPD，并生成包括视频文件属性数据VFPD和解析的多个视频数据PIC（VIDEO）的视频文件数据VF。 此外，也以相同的方式生成音频文件数据AF。