公开(公告)号：US06304472B1

公开(公告)日：2001-10-16

申请号：US09570034

申请日：2000-05-12

申请人： Masahiro Nagasu ,  Shin Kimura ,  Mutsuhiro Mori ,  Kiyoshi Nakata ,  Mutsuhiro Terunuma

发明人： Masahiro Nagasu ,  Shin Kimura ,  Mutsuhiro Mori ,  Kiyoshi Nakata ,  Mutsuhiro Terunuma

IPC分类号： H02M324

CPC分类号： H02M7/53871 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49111 ,  H02M7/003 ,  H02M2001/0009 ,  H01L2924/00014

摘要： In order to detect a current with high accuracy in an electric power converting system, an inductor is connected to a main terminal of a switching element in series, and a voltage generated in both ends of the inductor during switching period is integrated using an integrating circuit to detect the current.

摘要翻译： 为了在电力转换系统中高精度地检测电流，将电感器串联连接到开关元件的主端子，并且在开关周期期间在电感器的两端产生的电压使用积分电路 检测电流。

公开(公告)号：US06414370B1

公开(公告)日：2002-07-02

申请号：US09639801

申请日：2000-08-17

申请人： Masahiro Nagasu ,  Hideo Kobayashi ,  Hideki Miyazaki ,  Shin Kimura ,  Junichi Sakano ,  Mutsuhiro Mori

发明人： Masahiro Nagasu ,  Hideo Kobayashi ,  Hideki Miyazaki ,  Shin Kimura ,  Junichi Sakano ,  Mutsuhiro Mori

IPC分类号： H01L27082

CPC分类号： H01L29/866 ,  H01L29/0692 ,  H01L29/0834 ,  H01L29/7393 ,  H01L29/7395 ,  H03K17/08148 ,  H03K17/0828

摘要： A semiconductor circuit or a semiconductor device has the current-voltage characteristic that, in a blocking-state of the semiconductor circuit or the semiconductor device, a current gently flows for values of a voltage equal to or greater than a first voltage value but equal to or smaller than a second voltage value, whereas a current abruptly flows for values of a voltage greater than the second voltage value. Due to the current-voltage characteristic, energy accumulated in an inductance provided within the circuit is consumed by a differential resistance of the semiconductor circuit or a semiconductor, thereby preventing the occurrence of the electromagnetic noise and an excessively large voltage.

摘要翻译： 半导体电路或半导体器件具有电流 - 电压特性，在半导体电路或半导体器件的阻挡状态下，电流缓慢地流过等于或大于第一电压值但等于或等于 或小于第二电压值，而电流突然流过大于第二电压值的电压值。 由于电流 - 电压特性，在电路内提供的电感中积累的能量被半导体电路或半导体的差分电阻消耗，从而防止电磁噪声的发生和过大的电压。

公开(公告)号：US06204717B1

公开(公告)日：2001-03-20

申请号：US08651875

申请日：1996-05-21

申请人： Masahiro Nagasu ,  Hideo Kobayashi ,  Hideki Miyazaki ,  Shin Kimura ,  Junichi Sakano ,  Mutsuhiro Mori

发明人： Masahiro Nagasu ,  Hideo Kobayashi ,  Hideki Miyazaki ,  Shin Kimura ,  Junichi Sakano ,  Mutsuhiro Mori

IPC分类号： H03K508

CPC分类号： H01L29/866 ,  H01L29/0692 ,  H01L29/0834 ,  H01L29/7393 ,  H01L29/7395 ,  H03K17/08148 ,  H03K17/0828

摘要： A semiconductor circuit or a semiconductor device has the current-voltage characteristic that, in a blocking-state of the semiconductor circuit or the semiconductor device, a current gently flows for values of a voltage equal to or greater than a first voltage value but equal to or smaller than a second voltage, whereas a current abruptly flows for values of a voltage greater than the second voltage value. Due to the current-voltage characteristic, energy accumulated in an inductance provided within the circuit is consumed by a differential resistance of the semiconductor circuit or a semiconductor, thereby prevent the occurrence of the electromagnetic noise and the excessively large voltage.

摘要翻译： 半导体电路或半导体器件具有电流 - 电压特性，在半导体电路或半导体器件的阻挡状态下，电流缓慢地流过等于或大于第一电压值但等于或等于 或小于第二电压，而电流突然流过大于第二电压值的电压值。 由于电流 - 电压特性，电路中提供的电感中积累的能量被半导体电路或半导体的差分电阻消耗，从而防止电磁噪声的发生和过大的电压。

公开(公告)号：US06600978B2

公开(公告)日：2003-07-29

申请号：US10013520

申请日：2001-12-13

申请人： Masahiro Nagasu ,  Yutaka Sato ,  Shin Kimura ,  Kiyoshi Nakata

发明人： Masahiro Nagasu ,  Yutaka Sato ,  Shin Kimura ,  Kiyoshi Nakata

IPC分类号： G06F1700

CPC分类号： B61L15/0036 ,  B60L15/38 ,  B60L2200/26 ,  B60L2240/525 ,  B60T13/665 ,  B60T17/228 ,  B61L15/0081 ,  B61L25/021 ,  B61L25/025 ,  B61L2205/04 ,  Y02T10/7258 ,  Y02T90/16

摘要： A railway vehicle operation-control system includes at least one central processing unit being connected to a plurality of devices, which are connected in parallel, via information communication means, the plurality of the devices having at least one operational state-monitoring function which transmits information on operational states of each device to the central processing unit; wherein a total controlled-variable necessary for the system is attained by allocating the total control variable to each device based on operational states determined from results of monitoring performed by the operational state-monitoring function, and a performance margin which is defined as a difference between a permissible power-output value and a current power-output value for each device while monitoring and reflecting the performance margin of each device.

公开(公告)号：US07965056B2

公开(公告)日：2011-06-21

申请号：US12108573

申请日：2008-04-24

申请人： Mutsuhiro Terunuma ,  Eiichi Toyota ,  Motomi Shimada ,  Masahiro Nagasu

发明人： Mutsuhiro Terunuma ,  Eiichi Toyota ,  Motomi Shimada ,  Masahiro Nagasu

IPC分类号： H02P27/04

CPC分类号： H02M3/156 ,  B60L7/16 ,  B60L9/18 ,  B60L15/2045 ,  B60L2200/26 ,  B60L2220/12 ,  H02M7/797 ,  H02M2001/0074 ,  Y02T10/644 ,  Y02T10/645 ,  Y02T10/7283

摘要： The invention provides a control apparatus of a power conversion system for driving an induction motor via a VVVF inverter, wherein the AC voltage generated by the inverter is increased so as to expand the high-speed side property of the induction motor, to thereby improve the performance during power running and regenerative braking. In the present system, a DC power supply source having a power storage system with a capacity capable of processing the current flowing into or out of the inverter is inserted in series to the ground side of the input of the inverter, and the output voltage thereof is controlled from zero in a continuous manner to be added to the trolley voltage, which is then applied to the inverter.

摘要翻译： 本发明提供了一种用于通过VVVF逆变器驱动感应电动机的电力转换系统的控制装置，其中增加了由逆变器产生的交流电压以扩大感应电动机的高速侧特性，从而改善了 电力运行和再生制动过程中的性能。 在本系统中，具有能够处理流入或流出逆变器的电流的能力的蓄电系统的直流电源源与逆变器的输入端的接地侧串联插入，其输出电压 以连续的方式从零被控制以加到台车电压上，然后施加到电抗器上。

公开(公告)号：US20080266920A1

公开(公告)日：2008-10-30

申请号：US12108573

申请日：2008-04-24

申请人： Mutsuhiro Terunuma ,  Eiichi Toyota ,  Motomi Shimada ,  Masahiro Nagasu

发明人： Mutsuhiro Terunuma ,  Eiichi Toyota ,  Motomi Shimada ,  Masahiro Nagasu

IPC分类号： H02M7/00 ,  H02M7/537

CPC分类号： H02M3/156 ,  B60L7/16 ,  B60L9/18 ,  B60L15/2045 ,  B60L2200/26 ,  B60L2220/12 ,  H02M7/797 ,  H02M2001/0074 ,  Y02T10/644 ,  Y02T10/645 ,  Y02T10/7283

摘要： The invention provides a control apparatus of a power conversion system for driving an induction motor via a VVVF inverter, wherein the AC voltage generated by the inverter is increased so as to expand the high-speed side property of the induction motor, to thereby improve the performance during power running and regenerative braking. In the present system, a DC power supply source having a power storage system with a capacity capable of processing the current flowing into or out of the inverter is inserted in series to the ground side of the input of the inverter, and the output voltage thereof is controlled from zero in a continuous manner to be added to the trolley voltage, which is then applied to the inverter.

摘要翻译： 本发明提供了一种用于通过VVVF逆变器驱动感应电动机的电力转换系统的控制装置，其中增加了由逆变器产生的交流电压以扩大感应电动机的高速侧特性，从而改善了 电力运行和再生制动过程中的性能。 在本系统中，具有能够处理流入或流出逆变器的电流的能力的蓄电系统的直流电源源与逆变器的输入端的接地侧串联插入，其输出电压 以连续的方式从零被控制以加到台车电压上，然后施加到电抗器上。

公开(公告)号：US5859446A

公开(公告)日：1999-01-12

申请号：US802882

申请日：1997-02-19

申请人： Masahiro Nagasu ,  Mutsuhiro Mori ,  Hideo Kobayashi ,  Junichi Sakano

发明人： Masahiro Nagasu ,  Mutsuhiro Mori ,  Hideo Kobayashi ,  Junichi Sakano

IPC分类号： H01L29/06 ,  H01L29/417 ,  H01L29/861 ,  H02M7/48

CPC分类号： H01L29/417 ,  H01L29/8611

摘要： In a diode, the backward length L of an anode electrode in a region, where a semiconductor layer of a p.sup.+ conductivity type and an anode electrode do not contact each other, is made longer than the diffusion length of holes in a semiconductor layer of an n.sup.- conductivity type for obtaining a large critical di/dt.

摘要翻译： 在二极管中，在p +导电型半导体层和阳极电极的区域中的阳极电极的后向长度L不比在半导体层中的空穴的扩散长度长 n-导电型用于获得大的临界di / dt。

公开(公告)号：US5767555A

公开(公告)日：1998-06-16

申请号：US612457

申请日：1996-03-07

申请人： Junichi Sakano ,  Hideo Kobayashi ,  Masahiro Nagasu ,  Mutsuhiro Mori

发明人： Junichi Sakano ,  Hideo Kobayashi ,  Masahiro Nagasu ,  Mutsuhiro Mori

IPC分类号： H01L29/10 ,  H01L29/745 ,  H01L29/749 ,  H01L29/76

CPC分类号： H01L29/7455 ,  H01L29/102 ,  H01L29/749

摘要： A compound semiconductor device including a MISFET and a thyristor connected in series wherein either the withstanding voltage between the MISFET p base layer and the thyristor p base layer is set lower than the withstanding voltage of the MISFET, the MISFET is turned off under a condition that the MISFET p base layer and the thyristor p base layer are connected via a p channel or the lateral resistance of the thyristor p base layer is reduced, thereby the safe operating region of the compound semiconductor device is extended.

摘要翻译： 一种复合半导体器件，包括MISFET和串联连接的晶闸管，其中MISFET p基极层和晶闸管p基极层之间的耐受电压设定为低于MISFET的耐受电压，MISFET在以下条件下关断： MISFET p基极层和晶闸管p基极层通过ap沟道连接，或者晶闸管p基极层的横向电阻降低，从而延长了化合物半导体器件的安全工作区域。

公开(公告)号：US06271709B1

公开(公告)日：2001-08-07

申请号：US09453204

申请日：1999-12-03

申请人： Shin Kimura ,  Masahiro Nagasu ,  Satoru Inarida ,  Hideki Miyazaki ,  Katsunori Suzuki

发明人： Shin Kimura ,  Masahiro Nagasu ,  Satoru Inarida ,  Hideki Miyazaki ,  Katsunori Suzuki

IPC分类号： H03K1716

CPC分类号： H03K17/168 ,  H03K17/163

摘要： A gate drive circuit of a voltage drive switching element, which is characterized by control of di/dt and dv/dt when an IGBT is switched by controlling increases in the switching time and loss of the IGBT, includes a drive means for amplifying a signal for controlling the switching operation of a voltage drive switching device including the IGBT, a means for detecting the gate voltage of the IGBT, a voltage decrease (increase) means for slowly decreasing (increasing) the output voltage when the drive means is turned on (off) in the course of time, and a voltage increase (decrease) means for slowly increasing (decreasing) the output voltage. By switching from the voltage decrease (increase) means to the voltage increase (decrease) means according to the detected value of the gate voltage of the IGBT, di/dt and dv/dt are controlled when the IGBT is turned on (off).

摘要翻译： 电压驱动开关元件的栅极驱动电路，其特征在于，通过控制IGBT的切换时间和损耗的切换来切换IGBT时的di / dt和dv / dt的控制，包括用于放大信号的驱动装置 用于控制包括IGBT的电压驱动开关装置的切换操作，用于检测IGBT的栅极电压的装置，用于当驱动装置接通时缓慢降低（增加）输出电压的电压降低（增加）装置（ 关闭），并且电压增加（减小）意味着缓慢增加（降低）输出电压。 通过从IGBT的栅极电压的检测值切换到电压降低（增加）装置到电压增加（减小）的手段，当IGBT导通（关闭）时，di / dt和dv / dt被控制。

公开(公告)号：US20080258252A1

公开(公告)日：2008-10-23

申请号：US12030156

申请日：2008-02-12

申请人： Haruka Shimizu ,  Katsumi Ishikawa ,  Masahiro Nagasu ,  Dai Tsugawa

发明人： Haruka Shimizu ,  Katsumi Ishikawa ,  Masahiro Nagasu ,  Dai Tsugawa

IPC分类号： H01L27/00

CPC分类号： H03K17/16 ,  H01L25/18 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/30107 ,  H02M7/003 ,  H03K17/567 ,  H03K17/687 ,  H03K17/732 ,  H03K17/74 ,  H03K2217/0036 ,  H01L2924/00014 ,  H01L2924/00

摘要： An object of the present invention is to reduce the conducting loss of an existing conversion circuit while suppressing its noise. The present invention is typically a circuit arrangement includes at least one switching device and a free-wheel diode connected in parallel with the switching device. The free-wheel diode is formed by connecting a silicon PiN diode in parallel with a Schottky barrier diode that uses a semiconductor material having a wider band gap than silicon as a base material. The silicon PiN diode and Schottky barrier diode are separate chips.

摘要翻译： 本发明的目的是减少现有转换电路的传导损耗，同时抑制其噪声。 本发明通常是包括与开关装置并联连接的至少一个开关装置和续流二极管的电路装置。 续流二极管通过将硅PiN二极管与使用具有比硅更宽的带隙的半导体材料作为基材的肖特基势垒二极管并联形成。 硅PiN二极管和肖特基势垒二极管是分离的芯片。