Non-destructive inspection apparatus and inspection system using it
    1.
    发明授权
    Non-destructive inspection apparatus and inspection system using it 失效
    无损检测仪器及使用它的检验系统

    公开(公告)号:US06333962B1

    公开(公告)日:2001-12-25

    申请号:US09326598

    申请日:1999-06-07

    IPC分类号: G01T100

    摘要: A non-destructive inspection apparatus has a radiation source, a radiation detector, a radiation source diver, a detector driver, a drive controller, a delay circuit, a radiation signal processing circuit, a memory, a computer, a display device, and an input device. The radiation detector consists of one-dimensional or two-dimensional array of detectors having a long collimator whose pores are in parallel with the radiation angle of the radiation emitted in an angular pattern from the radiation source, whereby a transmission image of a large size structure can be obtained at high speed and with a high resolution. Furthermore, the detect position in an inspection object can be specified by analyzing a plurality of specified transmission images using the inspection apparatus.

    摘要翻译: 非破坏性检查装置具有辐射源,辐射检测器,辐射源潜水员,检测器驱动器,驱动控制器,延迟电路,辐射信号处理电路,存储器,计算机,显示设备和 输入设备。 放射线检测器由具有长准直器的一维或二维检测器阵列组成,其具有与辐射源以角度图案发射的辐射的辐射角平行的孔,由此具有大尺寸结构的透射图像 可以高速,高分辨率地获得。 此外,可以通过使用检查装置分析多个指定的发送图像来指定检查对象中的检测位置。

    Non-destructive inspection apparatus and inspection system using it
    2.
    发明授权
    Non-destructive inspection apparatus and inspection system using it 失效
    无损检测仪器及使用它的检验系统

    公开(公告)号:US6049586A

    公开(公告)日:2000-04-11

    申请号:US326593

    申请日:1999-06-07

    IPC分类号: G01N23/04

    摘要: A non-destructive inspection apparatus has a radiation source, a radiation detector, a radiation source diver, a detector driver, a drive controller, a delay circuit, a radiation signal processing circuit, a memory, a computer, a display device, and an input device. The radiation detector consists of one-dimensional or two-dimensional array of detectors having a long collimator whose pores are in parallel with the radiation angle of the radiation emitted in an angular pattern from the radiation source, whereby a transmission image of a large size structure can be obtained at high speed and with a high resolution. Furthermore, the detect position in an inspection object can be specified by analyzing a plurality of specified transmission images using the inspection apparatus.

    摘要翻译: 非破坏性检查装置具有辐射源,辐射检测器,辐射源潜水员,检测器驱动器,驱动控制器,延迟电路,辐射信号处理电路,存储器,计算机,显示设备和 输入设备。 辐射检测器由具有长准直器的一维或二维检测器阵列组成,其长孔与辐射源以角度图案发射的辐射的辐射角平行,从而形成大尺寸结构的透射图像 可以高速,高分辨率地获得。 此外,可以通过使用检查装置分析多个指定的发送图像来指定检查对象中的检测位置。

    Neutron individual dose meter neutron dose rate meter, neutron detector
and its method of manufacture
    6.
    再颁专利
    Neutron individual dose meter neutron dose rate meter, neutron detector and its method of manufacture 失效
    中子单剂量计中子剂量率计,中子探测器及其制造方法

    公开(公告)号:USRE35908E

    公开(公告)日:1998-09-29

    申请号:US662229

    申请日:1996-06-14

    CPC分类号: G01T3/08 G01T1/026

    摘要: A neutron individual dose meter and a neutron dose rate meter, both capable of implementing the effective dose equivalent response. The neutron individual dose meter is capable of being accomplished by providing a composite layer made up of a converter such as boron, and a proton radiator, on the surface of a semiconductor neutron detection element. The neutron dose rate meter is capable of being accomplished through such a structure as to surround a neutron detector with a neutron moderator and a thermal neutron absorber which has openings. Thus, a neutron individual dose meter and a neutron dose rate meter, both capable of implementing the effective dose equivalent response and measurement at lower operating voltage have been provided. Further, these meters are capable of being implemented by utilizing a single semiconductor detection element, respectively.

    摘要翻译: PCT No.PCT / JP91 / 00574 Sec。 371日期1991年12月27日 102(e)日期1991年12月27日PCT 1991年4月26日PCT PCT。 公开号WO91 / 17462 日期1991年11月4日中子单个剂量计和中子剂量率计,均能实现有效剂量当量反应。 中子单个剂量计能够通过在半导体中子检测元件的表面上提供由诸如硼的转换器和质子辐射器构成的复合层来实现。 中子剂量率计能够通过这样一种结构来实现,即用中子减速剂和具有开口的热中子吸收体包围中子检测器。 因此,提供了能够在较低工作电压下实现有效剂量当量响应和测量的中子单个剂量计和中子剂量率计。 此外,这些仪表能够分别通过利用单个半导体检测元件来实现。

    Semiconductor radiation detection apparatus for discriminating radiation
having differing energy levels
    8.
    发明授权
    Semiconductor radiation detection apparatus for discriminating radiation having differing energy levels 失效
    用于区分具有不同能级的辐射的半导体辐射检测装置

    公开(公告)号:US5457322A

    公开(公告)日:1995-10-10

    申请号:US219353

    申请日:1994-03-29

    IPC分类号: G01T1/24 H01L31/09 H01L31/115

    CPC分类号: G01T1/241 H01L31/115

    摘要: The invention provides a high sensitivity semiconductor radiation detection apparatus having pn junctions formed in opposite surfaces of at least one semiconductor wafer. A common electrode for the pn junctions is formed in the substrate region of the semiconductor wafers, and a variable reverse bias voltage is supplied to an electrode formed in contact with at least one of the pn junctions, to vary the thickness of the depletion region generated at said pn junction, and hence the sensitivity of said junction to incident radiation of varying energy levels. By adjusting the relative thickness of the respective depletion regions, different types of radiation may be distinguished.

    摘要翻译: 本发明提供一种具有形成在至少一个半导体晶片的相对表面上的pn结的高灵敏度半导体辐射检测装置。 在半导体晶片的衬底区域中形成用于pn结的公共电极,并且向与pn结中的至少一个接触形成的电极提供可变反向偏压,以改变所产生的耗尽区的厚度 在所述pn结处,因此所述结点对不同能级的入射辐射的灵敏度。 通过调整各耗尽区的相对厚度,可以区分不同类型的辐射。

    Semiconductor detection apparatus for detecting nuclear radiation
    9.
    发明授权
    Semiconductor detection apparatus for detecting nuclear radiation 失效
    用于检测核辐射的半导体检测装置

    公开(公告)号:US5336890A

    公开(公告)日:1994-08-09

    申请号:US130425

    申请日:1993-10-01

    IPC分类号: G01T1/24 H01L31/09 H01L31/115

    CPC分类号: G01T1/241 H01L31/115

    摘要: A high sensitivity semiconductor radiation detector and semiconductor radiation detection apparatus having pn junctions formed in surfaces of at least one semiconductor wafer. A common electrode for the pn junctions may be formed in substrate regions of the semiconductor wafers, and a variable reverse bias voltage may be supplied to at least one electrode formed in contact with a pair of pn junctions. The variable reverse bias means adjusts depletion region thickness(es) so that the detector can detect and distinguish different kinds of nuclear radiation by differing energy levels.

    摘要翻译: 具有形成在至少一个半导体晶片的表面中的pn结的高灵敏度半导体辐射检测器和半导体辐射检测装置。 可以在半导体晶片的衬底区域中形成用于pn结的公共电极,并且可以向与一对pn结接触形成的至少一个电极提供可变的反向偏置电压。 可变反向偏置装置调节耗尽区厚度,使得检测器能够通过不同的能级检测和区分不同种类的核辐射。