公开(公告)号：US20110220153A1

公开(公告)日：2011-09-15

申请号：US13042645

申请日：2011-03-08

申请人： Hiroshi Tanaka ,  Hironobu Hyakutake ,  Takashi Uno

发明人： Hiroshi Tanaka ,  Hironobu Hyakutake ,  Takashi Uno

IPC分类号： B08B3/00

CPC分类号： H01L21/67057 ,  H01L21/67028

摘要： There is provided a substrate processing method including cleaning a substrate by immersing the substrate in a cleaning solution in a longitudinal direction while the cleaning solution is supplied to a cleaning tank; transferring the substrate picked up from the cleaning tank to a drying chamber while holding the substrate in a longitudinal direction; and drying the substrate in the drying chamber communicating with an upper area of the cleaning tank by alternately supplying a first drying gas containing vapor of a solvent for removing a liquid and a second drying gas without containing the vapor of the solvent for removing the liquid to an area where the substrate is exposed between the upper area of the cleaning tank and the drying chamber after an upper end of the cleaned substrate is picked up from a liquid surface of the cleaning solution.

摘要翻译： 提供了一种基板处理方法，包括通过在将清洁溶液供应到清洗槽的同时将基板浸入清洁溶液中而沿纵向清洗基板; 将从所述清洗槽拾取的所述基板沿长度方向保持所述基板; 以及通过交替地供给包含用于除去液体的溶剂的蒸气的第一干燥气体和第二干燥气体来干燥所述干燥室中与所述清洗槽的上部区域连通的基板，而不将所述溶剂的蒸气除去以除去所述液体 从清洗液的液面取出基板在清洗槽的上部区域与清洗后的基板的上端之间的干燥室之间露出的区域。

公开(公告)号：US08778092B2

公开(公告)日：2014-07-15

申请号：US13042645

申请日：2011-03-08

申请人： Hiroshi Tanaka ,  Hironobu Hyakutake ,  Takashi Uno

发明人： Hiroshi Tanaka ,  Hironobu Hyakutake ,  Takashi Uno

IPC分类号： B08B3/04 ,  B08B5/02 ,  F26B5/00

CPC分类号： H01L21/67057 ,  H01L21/67028

摘要： There is provided a substrate processing method including cleaning a substrate by immersing the substrate in a cleaning solution in a longitudinal direction while the cleaning solution is supplied to a cleaning tank; transferring the substrate picked up from the cleaning tank to a drying chamber while holding the substrate in a longitudinal direction; and drying the substrate in the drying chamber communicating with an upper area of the cleaning tank by alternately supplying a first drying gas containing vapor of a solvent for removing a liquid and a second drying gas without containing the vapor of the solvent for removing the liquid to an area where the substrate is exposed between the upper area of the cleaning tank and the drying chamber after an upper end of the cleaned substrate is picked up from a liquid surface of the cleaning solution.

摘要翻译： 提供了一种基板处理方法，包括通过在将清洁溶液供应到清洗槽的同时将基板浸入清洁溶液中而沿纵向清洗基板; 将从所述清洗槽拾取的所述基板沿长度方向保持所述基板; 以及通过交替地供给包含用于除去液体的溶剂的蒸气的第一干燥气体和第二干燥气体来干燥所述干燥室中与所述清洗槽的上部区域连通的基板，而不将所述溶剂的蒸气除去以除去所述液体 从清洗液的液面取出基板在清洗槽的上部区域与清洗后的基板的上端之间的干燥室之间露出的区域。

公开(公告)号：US20080097647A1

公开(公告)日：2008-04-24

申请号：US11907518

申请日：2007-10-12

申请人： Hiroshi Tanaka ,  Hironobu Hyakutake ,  Yuji Kamikawa

发明人： Hiroshi Tanaka ,  Hironobu Hyakutake ,  Yuji Kamikawa

IPC分类号： G06F19/00

CPC分类号： H01L21/67057 ,  H01L21/67028

摘要： The feature of the present invention is to enhance the throughput of manufacturing semiconductor wafers and/or liquid crystal substrates, by reducing the time required for performing a rinsing process. In this invention, the position of an object to be processed is controlled, such that a distance (L1) between the surface position (LV1) of a rinsing liquid upon the rinsing process and a top end position (LV2) of the object to be processed (wafers 2) becomes shorter than a distance (L2) between the surface position (LV3) of a chemical liquid upon a chemical liquid process and the top end position (LV4) of the object to be processed (wafers 2). Alternatively, the position of the object to be processed is controlled, such that the distance (L1) between the surface position (LV1) of the rinsing liquid upon the rinsing process and the top end position (LV2) of the object to be processed (wafers 2) becomes shorter than a distance (L3) between the bottom face position (LV5) of the rinsing liquid and a bottom end position (LV6) of the object to be processed (wafers 2).

摘要翻译： 本发明的特征是通过减少进行漂洗处理所需的时间来提高制造半导体晶片和/或液晶基板的生产量。 在本发明中，对被处理物的位置进行控制，使得漂洗处理后的冲洗液的表面位置（LV1）与上述漂洗液的顶端位置（LV2）之间的距离（L 1） 待处理对象（晶片2）变得短于化学液体处理时的化学液体的表面位置（LV 3）与待处理物体的顶端位置（LV 4）之间的距离（L 2） 晶圆2）。 或者，控制待处理对象的位置，使得漂洗过程中的冲洗液体的表面位置（LV 1）与物体的顶端位置（LV2）之间的距离（L 1）与 （晶片2）变得比漂洗液体的底面位置（LV5）和待处理物体（晶片2）的底端位置（LV6）之间的距离（L 3）短。

公开(公告)号：US08577502B2

公开(公告)日：2013-11-05

申请号：US11907518

申请日：2007-10-12

申请人： Hiroshi Tanaka ,  Hironobu Hyakutake ,  Yuji Kamikawa

发明人： Hiroshi Tanaka ,  Hironobu Hyakutake ,  Yuji Kamikawa

IPC分类号： G05B21/00 ,  G01N21/00 ,  G01N35/02

CPC分类号： H01L21/67057 ,  H01L21/67028

摘要： A processing apparatus is provided for enhancing throughput in the manufacture of semiconductor wafers and/or liquid crystal substrates, by reducing the time required for performing a rinsing process. A position of an object to be processed is controlled, such that a distance between the surface position of a rinsing liquid upon the rinsing process and a top end position of the object to be processed becomes shorter than a distance between the surface position of a chemical liquid upon a chemical liquid process and the top end position of the object to be processed. Alternatively, the position of the object to be processed is controlled, such that the distance between the surface position of the rinsing liquid upon the rinsing process and the top end position of the object to be processed becomes shorter than a distance between the bottom face position of the rinsing liquid and a bottom end position of the object to be processed.

摘要翻译： 提供了一种处理装置，用于通过减少进行漂洗处理所需的时间来增加制造半导体晶片和/或液晶基板的生产量。 控制待处理物体的位置，使得漂洗过程中的冲洗液体的表面位置与待处理物体的顶端位置之间的距离短于化学品的表面位置之间的距离 液体在化学液体处理和被处理物体的顶端位置。 或者，控制被处理物的位置，使得冲洗处理时的冲洗液的表面位置与待处理物体的上端位置之间的距离比底面位置 的冲洗液体和待处理物体的底端位置。

公开(公告)号：US06293288B2

公开(公告)日：2001-09-25

申请号：US09783956

申请日：2001-02-16

申请人： Naoki Shindo ,  Shigenori Kitahara ,  Hironobu Hyakutake

发明人： Naoki Shindo ,  Shigenori Kitahara ,  Hironobu Hyakutake

IPC分类号： B08B304

CPC分类号： H01L21/67248 ,  B08B3/044 ,  H01L21/67057

摘要： Cleaning liquid supply nozzles 32 are provided within a processing tank 30 for cleaning semiconductor wafers W. A distilled water source 31 and the cleaning liquid supply nozzles 32 are connected via a distilled water supply pipeline 33 and a chemical supply tank 36 and the cleaning liquid supply nozzles 32 are connected via a chemical supply pipeline 35. A flow-rate adjustment valve 37 is provided in the distilled water supply pipeline 33, and the supply of distilled water from the distilled water supply pipeline 33 to the processing tank 30 and the supply of a chemical from the chemical supply pipeline 35 to the processing tank 30 are switched by a switching valve 34. A temperature sensor 39 is disposed within the processing tank 30 for detecting the temperature of a processing liquid (the chemical or rinse liquid) therein and a CPU 40 controls the flow-rate adjustment valve 37 and the switching valve 34 on the basis of a temperature signal from the temperature sensor 39, so that the time required for the processing can be determined from the temperature of the cleaning liquid, thus improving the cleaning capability and cleaning precision.

公开(公告)号：US06203627B1

公开(公告)日：2001-03-20

申请号：US09291970

申请日：1999-04-15

申请人： Naoki Shindo ,  Shigenori Kitahara ,  Hironobu Hyakutake

发明人： Naoki Shindo ,  Shigenori Kitahara ,  Hironobu Hyakutake

IPC分类号： B08B304

CPC分类号： H01L21/67248 ,  B08B3/044 ,  H01L21/67057

摘要： A cleaning method for cleaning, an object to be, processed. The object is cleaned by immersing the object into a cleaning liquid within a processing tank. The cleaning method includes the steps of: detecting the temperature of the cleaning liquid in which the object to be processed is immersed or to be immersed, and generating a corresponding temperature signal; determining an immersion time for the immersion of the object in the cleaning liquid, based on the temperature signal; and immersing the object to be processed in the cleaning liquid, for the immersion time.

摘要翻译： 一种清洁方法，一种待处理的物体。 通过将物体浸入处理槽内的清洁液中来清洁物体。 清洗方法包括以下步骤：检测被处理物体浸入或浸没的清洗液的温度，并产生相应的温度信号; 基于所述温度信号确定用于将所述物体浸入所述清洁液体中的浸渍时间; 并将待处理物体浸渍在清洗液中浸渍时间。

公开(公告)号：US08882961B2

公开(公告)日：2014-11-11

申请号：US13127571

申请日：2009-11-06

申请人： Hironobu Hyakutake ,  Koji Yamashita ,  Shingo Kamitomo

发明人： Hironobu Hyakutake ,  Koji Yamashita ,  Shingo Kamitomo

IPC分类号： C23F1/08 ,  C23F1/00 ,  B01D53/78 ,  B01D53/18 ,  H01L21/67

CPC分类号： B01D53/78 ,  B01D53/185 ,  B01D2252/103 ,  B01D2258/0216 ,  H01L21/67017

摘要： The density of a treatment fluid in exhaust gas is reduced, the amount of the treatment fluid that flows into exhausting equipment connected to a substrate treatment apparatus is reduced, and a load on the exhausting equipment is reduced. A substrate treatment apparatus includes: a substrate treating unit that treats a substrate; a treatment fluid supply unit that supplies, to the substrate treating unit, a treatment fluid used to treat the substrate; and an exhaust gas treating unit into which an exhaust gas containing the treatment fluid discharged from the substrate treating unit is introduced. The exhaust gas treating unit includes spray nozzles that spray a solvent toward the exhaust gas, the solvent dissolving the treatment fluid, thereby reducing the density of the treatment fluid in the exhaust gas. The exhaust gas treating unit has porous dispersion plates that cause the exhaust gas to disperse.

摘要翻译： 排气中的处理液的密度降低，流入与基板处理装置连接的排气装置中的处理流体的量减少，排气装置的负荷减小。 基板处理装置包括：基板处理单元，其处理基板; 处理液供给单元，向所述基板处理单元供给用于处理所述基板的处理流体; 以及废气处理单元，其中引入含有从基板处理单元排出的处理流体的废气。 排气处理单元包括向溶剂排出溶剂的喷嘴，溶解处理流体的溶剂，从而降低排气中的处理流体的密度。 排气处理单元具有使废气分散的多孔分散板。

公开(公告)号：US20110259521A1

公开(公告)日：2011-10-27

申请号：US13127571

申请日：2009-11-06

申请人： Hironobu Hyakutake ,  Koji Yamashita ,  Shingo Kamitomo

发明人： Hironobu Hyakutake ,  Koji Yamashita ,  Shingo Kamitomo

IPC分类号： C23F1/08

CPC分类号： B01D53/78 ,  B01D53/185 ,  B01D2252/103 ,  B01D2258/0216 ,  H01L21/67017

摘要： The density of a treatment fluid in exhaust gas is reduced, the amount of the treatment fluid that flows into exhausting equipment connected to a substrate treatment apparatus is reduced, and a load on the exhausting equipment is reduced. A substrate treatment apparatus includes: a substrate treating unit that treats a substrate; a treatment fluid supply unit that supplies, to the substrate treating unit, a treatment fluid used to treat the substrate; and an exhaust gas treating unit into which an exhaust gas containing the treatment fluid discharged from the substrate treating unit is introduced. The exhaust gas treating unit includes spray nozzles that spray a solvent toward the exhaust gas, the solvent dissolving the treatment fluid, thereby reducing the density of the treatment fluid in the exhaust gas. The exhaust gas treating unit has porous dispersion plates that cause the exhaust gas to disperse.

摘要翻译： 排气中的处理液的密度降低，流入与基板处理装置连接的排气装置中的处理流体的量减少，排气装置的负荷减小。 基板处理装置包括：基板处理单元，其处理基板; 处理液供给单元，向所述基板处理单元供给用于处理所述基板的处理流体; 以及废气处理单元，其中引入含有从基板处理单元排出的处理流体的废气。 排气处理单元包括向溶剂排出溶剂的喷嘴，溶解处理流体的溶剂，从而降低排气中的处理流体的密度。 排气处理单元具有使废气分散的多孔分散板。

公开(公告)号：US09027573B2

公开(公告)日：2015-05-12

申请号：US13115416

申请日：2011-05-25

申请人： Hironobu Hyakutake ,  Shinichiro Shimomura

发明人： Hironobu Hyakutake ,  Shinichiro Shimomura

IPC分类号： H01L21/00 ,  H01L21/67

CPC分类号： H01L21/67109 ,  H01L21/67086

摘要： A substrate processing apparatus that includes a process tank having a pair of opposed sidewalls for storing a chemical liquid, and processing a plurality of substrates by the chemical liquid; a substrate holding mechanism including a holding part for holding the plurality of substrates, and a back part connected to the holding part and interposed between the substrates held by the holding part and one sidewall of the pair of opposed sidewalls when the substrate holding mechanism is loaded into the process tank. A heating device is disposed on the process tank for heating the stored chemical liquid. The heating device includes at least a first heater disposed on the one sidewall, and a second heater disposed on the other sidewall of the pair of opposed sidewalls. Energy outputs of the first heater and the second heater are independently controlled.

摘要翻译： 一种基板处理装置，包括：处理槽，具有一对相对的侧壁，用于储存化学液体;以及通过所述化学液体处理多个基板; 衬底保持机构，其包括用于保持多个衬底的保持部分，以及连接到保持部分并且当衬底保持机构被加载时插入在由保持部分保持的衬底和一对相对侧壁的一个侧壁之间的后部 进入加工罐。 加热装置设置在处理罐中，用于加热储存的化学液体。 所述加热装置至少包括设置在所述一个侧壁上的第一加热器，以及设置在所述一对相对侧壁的另一个侧壁上的第二加热器。 独立控制第一加热器和第二加热器的能量输出。

公开(公告)号：US08685169B2

公开(公告)日：2014-04-01

申请号：US12952804

申请日：2010-11-23

申请人： Hironobu Hyakutake ,  Toshihide Takashima

发明人： Hironobu Hyakutake ,  Toshihide Takashima

IPC分类号： C23G1/02 ,  B08B3/04

CPC分类号： H01L21/67057 ,  H01L21/67253

摘要： Disclosed are a substrate processing apparatus, a substrate processing method and a storage medium, capable of removing contaminant materials from a substrate by using SPM liquid (sulfuric acid and hydrogen peroxide mixture) while preventing degradation of the function of the SPM liquid for removing the contaminant materials. The SPM liquid is filled in a processing bath and the substrate is immersed in the SPM liquid. A heating unit is provided in the circulation path to heat the SPM liquid. A hydrogen peroxide supply line supplements hydrogen peroxide to the SPM liquid in the circulation path. A control unit adjusts the temperature of the SPM liquid to the predetermined temperature in the range of 135° C. to 170° C. based on a temperature detection value and outputs a control signal to supplement the sulfuric acid to compensate for the SPM liquid as the SPM liquid is evaporated by heating.

摘要翻译： 公开了一种基板处理装置，基板处理方法和存储介质，其能够通过使用SPM液体（硫酸和过氧化氢混合物）从基板除去污染物质，同时防止用于除去污染物的SPM液体的功能降低 材料 将SPM液体填充在处理槽中，将基板浸渍在SPM液体中。 在循环路径中设置加热单元以加热SPM液体。 过氧化氢供应线补充过氧化氢到循环路径中的SPM液体。 控制单元根据温度检测值将SPM液体的温度调节到135℃至170℃范围内的预定温度，并输出控制信号以补充硫酸以补偿SPM液体 通过加热蒸发SPM液体。