OPTICAL FILM, LAMINATE AND TOUCH PANEL
    4.
    发明申请
    OPTICAL FILM, LAMINATE AND TOUCH PANEL 审中-公开
    光学膜,层压板和触控面板

    公开(公告)号:US20100053101A1

    公开(公告)日:2010-03-04

    申请号:US12531992

    申请日:2009-02-24

    IPC分类号: G06F3/041 B32B7/02

    摘要: An optical film that can make interference fringes inconspicuous with maintaining high surface hardness and transmission sharpness is provided.The optical film 1 has a transparent base material layer 12. An undercoat layer 14 is laminated on at least one surface of the transparent base material layer 12. A transparent hard coat layer 16 is laminated on the undercoat layer 14. An anti-reflection layer 18 is laminated on the transparent hard coat layer 16. The anti-reflection layer 18 is a layer having a low refractive index smaller than the refractive index of the transparent hard coat layer 16. The layers are designed so that refractive index n0 of the transparent base material layer 12, refractive index n1 of the undercoat layer 14, refractive index n2 of the transparent hard coat layer 16, and refractive index n3 of the anti-reflection layer 18 should satisfy the relationships of n3

    摘要翻译: 提供了一种能够使干涉条纹不显眼且保持高表面硬度和透光锐度的光学膜。 光学膜1具有透明基材层12.在透明基材层12的至少一个表面层叠底涂层14.将透明硬涂层16层合在底涂层14上。防反射层 18层叠在透明硬涂层16上。防反射层18是具有比透明硬涂层16的折射率小的折射率的低层。这些层被设计成使透明的硬涂层16的折射率n0 基材层12,底涂层14的折射率n1,透明硬涂层16的折射率n2和抗反射层18的折射率n3应满足n3

    Pattern forming method, photomask manufacturing method, semiconductor device manufacturing method, and computer program product
    5.
    发明授权
    Pattern forming method, photomask manufacturing method, semiconductor device manufacturing method, and computer program product 有权
    图案形成方法,光掩模制造方法,半导体器件制造方法和计算机程序产品

    公开(公告)号:US07608368B2

    公开(公告)日:2009-10-27

    申请号:US11342677

    申请日:2006-01-31

    IPC分类号: G03F9/00 G03C5/00

    摘要: A pattern forming method includes developing a resist film on a main surface of a substrate by flowing a developing solution on the film to form a resist pattern, the developing the film including partitioning the surface into M (≧2) regions and determining correction exposure dose for each of the M region, the determining the correction exposure dose including determining a correction exposure dose for an i-th (1≦i≦M) region so that an actual pattern dimension of a pattern on the i-th region matches a design pattern dimension based on a pattern opening ratio of a pattern to be formed on the substrate, the pattern being located on a region which is further upstream region than the i-th region with respect to an upstream direction of a flow of the solution, and forming the pattern by etching the substrate using the resist pattern as a mask.

    摘要翻译: 图案形成方法包括通过使显影溶液流到膜上以形成抗蚀剂图案,在基板的主表面上显影抗蚀剂膜,显影该膜包括将表面划分成M(> = 2)区域并确定校正曝光 确定校正曝光剂量,包括确定第i(1≤i≤M)区域的校正曝光剂量,使得第i个区域上的图案的实际图案尺寸 基于要在衬底上形成的图案的图案开口率来匹配设计图案尺寸,该图案位于比第i个区域的上游方向更靠上游区域的区域上 溶液,并且通过使用抗蚀剂图案作为掩模来蚀刻基板来形成图案。

    Surface Protective Sheet
    6.
    发明申请
    Surface Protective Sheet 审中-公开
    表面保护板

    公开(公告)号:US20090042017A1

    公开(公告)日:2009-02-12

    申请号:US10594255

    申请日:2005-03-25

    IPC分类号: B32B5/16

    摘要: To provide a surface protective sheet having superior anti-ultraviolet property and exhibiting little yellow tint.The surface protective sheet of the present invention has an anti-ultraviolet layer on at least one surface of a plastic film, and the anti-ultraviolet layer comprises an ultraviolet absorber, an ionizing radiation curable resin composition, and spherical microparticles having a mean particle diameter of 1 to 20 μm, and the microparticles are contained in an amount of 0.4 to 3% by weight in the anti-ultraviolet layer. The anti-ultraviolet layer preferably contains 0.01 to 1% by weight of organopolysiloxane.

    摘要翻译: 提供具有优异抗紫外线性能并且显示出很少黄色色调的表面保护片。 本发明的表面保护片在塑料膜的至少一个表面上具有防紫外线层,抗紫外线层含有紫外线吸收剂,电离辐射固化性树脂组合物,平均粒径 在抗紫外线层中含有0.4〜3重量%的微粒。 抗紫外线层优选含有0.01〜1重量%的有机聚硅氧烷。

    PHOTOMASK MANUFACTURING METHOD USING CHARGED BEAM WRITING APPARATUS
    7.
    发明申请
    PHOTOMASK MANUFACTURING METHOD USING CHARGED BEAM WRITING APPARATUS 审中-公开
    使用充电光束写入装置的光电制造方法

    公开(公告)号:US20080213677A1

    公开(公告)日:2008-09-04

    申请号:US12015032

    申请日:2008-01-16

    申请人: Masato Saito

    发明人: Masato Saito

    IPC分类号: G03F1/00 G03F7/00

    CPC分类号: G03F1/78

    摘要: A first relationship between the charge dose of a charged beam writing apparatus and the dimensional accuracy of a photomask pattern is obtained, and a charge dose is determined from given dimensional accuracy on the basis of the first relationship. On the basis of the determined charge dose, a resist by which a resist pattern having desired dimensions is formed with the charge dose is selected. A second relationship between the write condition of the charged beam writing apparatus and the write time necessary to write the selected resist with the charge dose is obtained for each write pattern. The write condition is determined for each write pattern on the basis of a condition given to the write time and the second relationship.

    摘要翻译: 获得充电光束写入装置的电荷剂量与光掩模图案的尺寸精度之间的第一关系,并且基于第一关系从给定的尺寸精度确定电荷剂量。 基于确定的电荷剂量,选择形成具有所需尺寸的抗蚀剂图案的抗蚀剂,其具有电荷剂量。 对于每个写入模式,获得充电光束写入装置的写入条件和写入所选择的抗蚀剂所需的写入时间之间的第二关系。 基于给予写入时间和第二关系的条件,为每个写入模式确定写入条件。

    Pattern drawing system, electrically charged beam drawing method, photomask manufacturing method, and semiconductor device manufacturing method

    公开(公告)号:US20060281198A1

    公开(公告)日:2006-12-14

    申请号:US11434258

    申请日:2006-05-16

    申请人: Masato Saito

    发明人: Masato Saito

    IPC分类号: H01L21/66 H01L23/58

    摘要: A pattern drawing system includes a beam irradiating mechanism which irradiates electrically charged beams on a film to be drawn, a coefficient calculating section which calculates a backward scattering coefficient relevant to a drawing pattern in the film to be drawn, based on an approximating function for approximating a relationship between a global coating rate of the drawing pattern and a backward scattering coefficient of the electrically charged beams in the film to be drawn, and based on the global coating rate of the drawing pattern, and an irradiation quantity calculating section which calculates an electrically charged beam irradiation quantity used for drawing the pattern using an electrically charged beams irradiating mechanism, based on the backward scattering coefficient of the pattern.