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公开(公告)号：US4958040A
公开(公告)日：1990-09-18
申请号：US410202
申请日：1989-09-21
IPC分类号： B01J27/125 , C07B61/00 , C07F7/12
CPC分类号： C07F7/126
摘要： A process for preparing diorganohalogenosilanes wherein diorganodihalogenosilanes are reacted with at least one organosilicon compound having at least one .tbd.Si--H bond in the molecule and selected from polysilanes, polycarbosilanes and polysilphenylenes is described. This reaction proceeds in the presence of a Lewis acid.
摘要翻译： 描述了制备二有机二卤代硅烷与至少一种在分子中具有至少一个3BOND Si-H键的有机硅化合物反应并选自聚硅烷，聚碳硅烷和聚苯乙烯的二有机卤代硅烷的方法。 该反应在路易斯酸存在下进行。
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2.发明授权
公开(公告)号：US4571331A
公开(公告)日：1986-02-18
申请号：US560389
申请日：1983-12-12
申请人： Morinobu Endou , Minoru Takamizawa , Tatsuhiko Hongu , Taishi Kobayashi , Akira Hayashida , Nobuaki Urasato , Hiromi Ohsaki , Nichiro Suzuki , Takasi Toide
发明人： Morinobu Endou , Minoru Takamizawa , Tatsuhiko Hongu , Taishi Kobayashi , Akira Hayashida , Nobuaki Urasato , Hiromi Ohsaki , Nichiro Suzuki , Takasi Toide
IPC分类号： C01B31/36 , C04B35/565 , C04B35/575
CPC分类号： B82Y30/00 , C01B31/36 , C04B35/565 , C04B35/575 , C01P2002/72 , C01P2002/82 , C01P2004/62 , C01P2004/64 , C01P2006/40
摘要： The invention provides a method for the preparation of an ultrafine powder of silicon carbide having an extremely fine and uniform particle size distribution of spherical agglomerate particles each formed of crystallites of 5 nm or smaller in size. The silicon carbide powder is prepared by the vapor phase pyrolysis of a specified methyl hydrogen(poly)silane as diluted with a carrier gas, e.g. hydrogen, to give a concentration of 40% by volume or lower at a temperature of 750.degree. to 1600.degree. C. The silicon carbide powder can readily be sintered at a temperature of 1750.degree. to 2500.degree. C. even without addition of a sintering aid to give a sintered body of extremely high density reaching 80% or larger of the theoretical value which can never be obtained of the conventional silicon carbide powders.
摘要翻译： 本发明提供一种制备碳化硅超细粉末的方法，其具有均匀的颗粒尺寸分布的球形聚集体颗粒，它们各自由5nm或更小的微晶形成。 碳化硅粉末通过气相热分解制备，所述气相热分解用载气稀释的特定甲基氢（聚）硅烷。 氢气，在750〜1600℃的温度下浓度为40体积％以下。碳化硅粉末可以容易地在1750〜2500℃的温度下烧结，即使不添加烧结助剂 得到非常高密度的烧结体达到常规碳化硅粉末不可获得的理论值的80％以上。
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公开(公告)号：US4981666A
公开(公告)日：1991-01-01
申请号：US931667
申请日：1986-11-17
CPC分类号： C30B25/005 , C30B29/36
摘要： In place of the conventional silicon source materials used in the prior art method for the preparation of silicon carbide whiskers, the inventive method utilizes a hydrolysis product of a chlorosilane compound R.sub.a SiCl.sub.4-a or a chlorodisilane compound R.sub.b Si.sub.2 Cl.sub.6-b, in which R is a hydrogen atom or a monovalent hydrocarbon group, a is zero to 3 and b is 1 to 5, as the silicon source which is intimately mixed with a powder of carbon and the mixture is heated at 1400.degree. to 1700.degree. C. to give silicon carbide whiskers in a high conversion. Alternatively, the hydrolysis of the chloro(di)silane compound is performed in an aqueous medium in which a powder of carbon is dispersed in advance so that the hydrolysis product as formed is already a mixture with the carbon powder.
摘要翻译： 本发明方法代替用于制备碳化硅晶须的现有技术方法中使用的常规硅源材料，其利用氯硅烷化合物RaSiCl4-a或氯二硅烷化合物RbSi2Cl6-b的水解产物，其中R为氢 原子或一价烃基，a为0〜3，b为1〜5，作为与碳粉充分混合的硅源，将混合物在1400〜1700℃下加热，得到碳化硅晶须 在高转换。 或者，氯（二）硅烷化合物的水解在预先分散有碳粉末的水性介质中进行，使得形成的水解产物已经是与碳粉末的混合物。
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公开(公告)号：US4762810A
公开(公告)日：1988-08-09
申请号：US17818
申请日：1987-02-24
申请人： Morinobu Endo , Minoru Takamizawa , Tatsuhiko Hongu , Akira Hayashida , Nobuaki Urasato , Hiromi Ohsaki
发明人： Morinobu Endo , Minoru Takamizawa , Tatsuhiko Hongu , Akira Hayashida , Nobuaki Urasato , Hiromi Ohsaki
IPC分类号： C04B35/565 , C04B35/571 , C04B35/56
CPC分类号： C04B35/571
摘要： Sintered bodies of silicon carbide having remarkably increased volume resistivity and thermal conductivity can be obtained by heating a green body shaped of a fine silicon carbide powder admixed with boron or a boron compound, e.g. boron carbide, titanium boride and boron oxide, as a sintering aid at 1800.degree. to 2200.degree. C. in the presence of or in the vicinity of a shaped body of a powdery mixture of a fine silicon carbide powder admixed with boron nitride in the same furnace. The improvements in the volume resistivity and thermal conductivity of the sintered body are particularly remarkable when the fine silicon carbide powder is a pyrolysis product of a methyl hydrogen silane compound such as tetramethyl disilane.
摘要翻译： 可以通过加热与硼或硼化合物混合的细小碳化硅粉末的生坯体，例如通过加热形成具有显着增加的体积电阻率和导热性的碳化硅的烧结体。 碳化硼，硼化钛和氧化硼作为烧结助剂，在1800-2200℃下，在与其相同的氮化硼混合的细碳化硅粉末的粉末混合物的成形体存在下或其附近 炉。 当细碳化硅粉末是甲基氢硅烷化合物如四甲基乙硅烷的热解产物时，烧结体的体积电阻率和热导率的改善是特别显着的。
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公开(公告)号：US5075474A
公开(公告)日：1991-12-24
申请号：US679199
申请日：1991-04-02
CPC分类号： C07F7/21
摘要： According to the method for preparing hexamethyl cyclotrisilazane of the present invention, hexamethyl cyclotrisilazane can be obtained by heating a linear or cyclic silazane compound represented by the following general formula:--(Me.sub.2 SiNH).sub.n --(wherein Me represents a methyl group and n is an integer of not less than 4) in the presence of at least one catalytic compound selected from the group consisting of ammonium salts of arylsulfonic acids and/or aminoarylsulfonic acids and the resulting hexamethyl cyclotrisilazane represented by the formula: --Me.sub.2 SiNH).sub.3 -- can be recovered by distilling off the same outside the reaction system. According to the method of the present invention, highly pure hexamethyl cyclotrisilazane can be industrially prepared in good efficiency and in a high yield. In particular, if octamethyl cyclotetrasilazane which can be industrially prepared from cheap dimethyldichlorosilane is used as a starting material, hexamethyl cyclotrisilazane can also be prepared at a low cost. Thus, the method of the present invention has enough practical value in the organic silicon industries.
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公开(公告)号：US5011639A
公开(公告)日：1991-04-30
申请号：US453038
申请日：1989-12-12
IPC分类号： C04B35/565 , C04B35/626 , H01L21/48
CPC分类号： H01L21/4807 , C04B35/565
摘要： A powdery mixture of a fine silicon carbide powder admixed with boron or a boron compound, e.g. boron carbide, titanium boride and boron oxide, as a sintering aid is compression-molded into a green body which is subjected to a sintering treatment into a sintered body. Different from conventional methods in which the sintering treatment is performed always in an atmosphere of an inert gas, e.g. argon, the sintering treatment in the inventive method is performed in an atmosphere of a rare gas containing 0.005-5% by volume of nitrogen. The sintered body of silicon carbide obtained by this method has an outstandingly high electric volume resistivity of 10.sup.10 to 10.sup.13 ohm.cm and a coefficient of thermal conductivity of 100-220 W/m.K.
摘要翻译： 与硼或硼化合物混合的细碳化硅粉末的粉末混合物，例如 作为烧结助剂的碳化硼，硼化钛和氧化硼被压缩成型坯，其经历烧结处理成烧结体。 不同于常规方法，其中始终在惰性气体气氛中进行烧结处理，例如， 氩气中，本发明方法中的烧结处理在含有0.005-5体积％氮气的稀有气体的气氛中进行。 通过该方法获得的碳化硅烧结体具有极高的体积电阻率为1010至1013欧姆·厘米，导热系数为100-220W / m·K。
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7.发明申请Heating apparatus, substrate processing apparatus, and method of manufacturing semiconductor devices 有权加热装置，基板处理装置以及半导体装置的制造方法公开(公告)号：US20090016706A1
公开(公告)日：2009-01-15
申请号：US12213823
申请日：2008-06-25
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
IPC分类号： F26B3/28
CPC分类号： H01L21/67109 , H01L21/67115
摘要： A heating apparatus comprises a wall for surrounding and defining a heating space, a heating element mounted on the inner side of the wall, reflecting members for reflecting the heat emitted from the heating element. Also, a moving unit joined to one end of each of the reflecting members for moving the reflecting members. Moreover, pivotal members joined to the reflecting members beside more their respective other side than one side of the reflecting members for controlling as pivots the movement of the reflecting member driven by the moving unit.
摘要翻译： 加热装置包括用于围绕和限定加热空间的壁，安装在壁的内侧上的加热元件，用于反射从加热元件发出的热的反射构件。 而且，移动单元连接到每个反射构件的一端以移动反射构件。 此外，枢转构件在反射构件的相对另一侧更靠近反射构件的一侧接合，用于控制由移动单元驱动的反射构件的运动。
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公开(公告)号：US5821325A
公开(公告)日：1998-10-13
申请号：US763982
申请日：1996-12-10
CPC分类号： C08G18/025
摘要： A hydroxy- or mercapto-bearing organic compound is caused to react with a polycarbodiimide compound in the presence of an alcoholate of an alkali metal or of an alkaline earth metal. The carbodiimide linkage in the polymer which results from the above-described reaction is crosslinked.
摘要翻译： 使含羟基或巯基的有机化合物在碱金属或碱土金属的醇化物的存在下与聚碳化二亚胺化合物反应。 由上述反应得到的聚合物中的碳二亚胺键被交联。
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公开(公告)号：US5750637A
公开(公告)日：1998-05-12
申请号：US658166
申请日：1996-06-04
CPC分类号： C08G73/00 , C08G18/025
摘要： This invention provides a process for the preparation of a polycarbodiimide solution wherein the polycarbodiimide is synthesized by heating an organic diisocyanate (e.g., 2,4-tolylene diisocyanate or 2,6-tolylene diisocyanate) in the presence of a carbodiimidation catlayst characterized in that a non-chlorinated aromatic hydrocarbon is used as the solvent and the resulting polycarbodiimide has a number average molecular weight from about 3,000 to about 10,000; wherein the synthesis is performed in the temperature range of from about 100.degree. to about 120.degree. C.
摘要翻译： 本发明提供一种制备聚碳二亚胺溶液的方法，其中聚碳二亚胺通过在碳二亚胺二酰亚胺存在下加热有机二异氰酸酯（例如，2,4-甲苯二异氰酸酯或2,6-甲苯二异氰酸酯）来合成，其特征在于， 使用非氯化芳烃作为溶剂，所得聚碳二亚胺的数均分子量为约3,000至约10,000; 其中合成在约100℃至约120℃的温度范围内进行。
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10.发明授权
公开(公告)号：US4869854A
公开(公告)日：1989-09-26
申请号：US114111
申请日：1987-10-27
IPC分类号： C03B8/02 , C04B35/571 , C04B35/589 , C08G77/62 , C08L83/16
CPC分类号： C08L83/16 , C04B35/571 , C04B35/589 , C08G77/62
摘要： A process for manufacturing an organic silazane polymer which comprises reacting ammonia with a mixture of at least one compound selected from the group consisting of organic silicon compounds of the following formulae (I) and (II) ##STR1## and at least one compound selected from the group consisting of organic silicon compounds of the following formula (III) ##STR2## in which R represents hydrogen, chlorine, bromine, methyl radical, ethyl radical, phenyl radical or vinyl radical, R.sub.1 represents hydrogen or methyl radical, R.sub.2 represents hydrogen, methyl radical, ethyl radical, phenyl radical or vinyl radical and X represents chlorine or bromine; to obtain an ammonolysis product. The ammonolysis product is polymerized in the presence of a basic catalyst capable of deprotonation to obtain an organic silazane polymer. The silazane polymer may be further melted, shaped and infusibilized. The thus infusibilized product is finally sintered to obtain a ceramic material.
摘要翻译： 一种制备有机硅氮烷聚合物的方法，其包括使氨与至少一种选自下式（I）和（II）的有机硅化合物的化合物的混合物反应：（IMA） II）和选自下式（III）的有机硅化合物（III）中的至少一种化合物，其中R表示氢，氯，溴，甲基，乙基，苯基或乙烯基 R1表示氢或甲基，R2表示氢，甲基，乙基，苯基或乙烯基，X表示氯或溴; 以获得氨解产物。 氨解产物在能够去质子化的碱性催化剂存在下聚合，得到有机硅氮烷聚合物。 硅氮烷聚合物可以进一步熔融，成型和不熔化。 将这样的不熔化产物最终烧结得到陶瓷材料。
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