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公开(公告)号：US4981666A
公开(公告)日：1991-01-01
申请号：US931667
申请日：1986-11-17
CPC分类号： C30B25/005 , C30B29/36
摘要： In place of the conventional silicon source materials used in the prior art method for the preparation of silicon carbide whiskers, the inventive method utilizes a hydrolysis product of a chlorosilane compound R.sub.a SiCl.sub.4-a or a chlorodisilane compound R.sub.b Si.sub.2 Cl.sub.6-b, in which R is a hydrogen atom or a monovalent hydrocarbon group, a is zero to 3 and b is 1 to 5, as the silicon source which is intimately mixed with a powder of carbon and the mixture is heated at 1400.degree. to 1700.degree. C. to give silicon carbide whiskers in a high conversion. Alternatively, the hydrolysis of the chloro(di)silane compound is performed in an aqueous medium in which a powder of carbon is dispersed in advance so that the hydrolysis product as formed is already a mixture with the carbon powder.
摘要翻译： 本发明方法代替用于制备碳化硅晶须的现有技术方法中使用的常规硅源材料，其利用氯硅烷化合物RaSiCl4-a或氯二硅烷化合物RbSi2Cl6-b的水解产物，其中R为氢 原子或一价烃基，a为0〜3，b为1〜5，作为与碳粉充分混合的硅源，将混合物在1400〜1700℃下加热，得到碳化硅晶须 在高转换。 或者，氯（二）硅烷化合物的水解在预先分散有碳粉末的水性介质中进行，使得形成的水解产物已经是与碳粉末的混合物。
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公开(公告)号：US5011639A
公开(公告)日：1991-04-30
申请号：US453038
申请日：1989-12-12
IPC分类号： C04B35/565 , C04B35/626 , H01L21/48
CPC分类号： H01L21/4807 , C04B35/565
摘要： A powdery mixture of a fine silicon carbide powder admixed with boron or a boron compound, e.g. boron carbide, titanium boride and boron oxide, as a sintering aid is compression-molded into a green body which is subjected to a sintering treatment into a sintered body. Different from conventional methods in which the sintering treatment is performed always in an atmosphere of an inert gas, e.g. argon, the sintering treatment in the inventive method is performed in an atmosphere of a rare gas containing 0.005-5% by volume of nitrogen. The sintered body of silicon carbide obtained by this method has an outstandingly high electric volume resistivity of 10.sup.10 to 10.sup.13 ohm.cm and a coefficient of thermal conductivity of 100-220 W/m.K.
摘要翻译： 与硼或硼化合物混合的细碳化硅粉末的粉末混合物，例如 作为烧结助剂的碳化硼，硼化钛和氧化硼被压缩成型坯，其经历烧结处理成烧结体。 不同于常规方法，其中始终在惰性气体气氛中进行烧结处理，例如， 氩气中，本发明方法中的烧结处理在含有0.005-5体积％氮气的稀有气体的气氛中进行。 通过该方法获得的碳化硅烧结体具有极高的体积电阻率为1010至1013欧姆·厘米，导热系数为100-220W / m·K。
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3.发明授权
公开(公告)号：US4571331A
公开(公告)日：1986-02-18
申请号：US560389
申请日：1983-12-12
申请人： Morinobu Endou , Minoru Takamizawa , Tatsuhiko Hongu , Taishi Kobayashi , Akira Hayashida , Nobuaki Urasato , Hiromi Ohsaki , Nichiro Suzuki , Takasi Toide
发明人： Morinobu Endou , Minoru Takamizawa , Tatsuhiko Hongu , Taishi Kobayashi , Akira Hayashida , Nobuaki Urasato , Hiromi Ohsaki , Nichiro Suzuki , Takasi Toide
IPC分类号： C01B31/36 , C04B35/565 , C04B35/575
CPC分类号： B82Y30/00 , C01B31/36 , C04B35/565 , C04B35/575 , C01P2002/72 , C01P2002/82 , C01P2004/62 , C01P2004/64 , C01P2006/40
摘要： The invention provides a method for the preparation of an ultrafine powder of silicon carbide having an extremely fine and uniform particle size distribution of spherical agglomerate particles each formed of crystallites of 5 nm or smaller in size. The silicon carbide powder is prepared by the vapor phase pyrolysis of a specified methyl hydrogen(poly)silane as diluted with a carrier gas, e.g. hydrogen, to give a concentration of 40% by volume or lower at a temperature of 750.degree. to 1600.degree. C. The silicon carbide powder can readily be sintered at a temperature of 1750.degree. to 2500.degree. C. even without addition of a sintering aid to give a sintered body of extremely high density reaching 80% or larger of the theoretical value which can never be obtained of the conventional silicon carbide powders.
摘要翻译： 本发明提供一种制备碳化硅超细粉末的方法，其具有均匀的颗粒尺寸分布的球形聚集体颗粒，它们各自由5nm或更小的微晶形成。 碳化硅粉末通过气相热分解制备，所述气相热分解用载气稀释的特定甲基氢（聚）硅烷。 氢气，在750〜1600℃的温度下浓度为40体积％以下。碳化硅粉末可以容易地在1750〜2500℃的温度下烧结，即使不添加烧结助剂 得到非常高密度的烧结体达到常规碳化硅粉末不可获得的理论值的80％以上。
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公开(公告)号：US4762810A
公开(公告)日：1988-08-09
申请号：US17818
申请日：1987-02-24
申请人： Morinobu Endo , Minoru Takamizawa , Tatsuhiko Hongu , Akira Hayashida , Nobuaki Urasato , Hiromi Ohsaki
发明人： Morinobu Endo , Minoru Takamizawa , Tatsuhiko Hongu , Akira Hayashida , Nobuaki Urasato , Hiromi Ohsaki
IPC分类号： C04B35/565 , C04B35/571 , C04B35/56
CPC分类号： C04B35/571
摘要： Sintered bodies of silicon carbide having remarkably increased volume resistivity and thermal conductivity can be obtained by heating a green body shaped of a fine silicon carbide powder admixed with boron or a boron compound, e.g. boron carbide, titanium boride and boron oxide, as a sintering aid at 1800.degree. to 2200.degree. C. in the presence of or in the vicinity of a shaped body of a powdery mixture of a fine silicon carbide powder admixed with boron nitride in the same furnace. The improvements in the volume resistivity and thermal conductivity of the sintered body are particularly remarkable when the fine silicon carbide powder is a pyrolysis product of a methyl hydrogen silane compound such as tetramethyl disilane.
摘要翻译： 可以通过加热与硼或硼化合物混合的细小碳化硅粉末的生坯体，例如通过加热形成具有显着增加的体积电阻率和导热性的碳化硅的烧结体。 碳化硼，硼化钛和氧化硼作为烧结助剂，在1800-2200℃下，在与其相同的氮化硼混合的细碳化硅粉末的粉末混合物的成形体存在下或其附近 炉。 当细碳化硅粉末是甲基氢硅烷化合物如四甲基乙硅烷的热解产物时，烧结体的体积电阻率和热导率的改善是特别显着的。
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公开(公告)号：US5075474A
公开(公告)日：1991-12-24
申请号：US679199
申请日：1991-04-02
CPC分类号： C07F7/21
摘要： According to the method for preparing hexamethyl cyclotrisilazane of the present invention, hexamethyl cyclotrisilazane can be obtained by heating a linear or cyclic silazane compound represented by the following general formula:--(Me.sub.2 SiNH).sub.n --(wherein Me represents a methyl group and n is an integer of not less than 4) in the presence of at least one catalytic compound selected from the group consisting of ammonium salts of arylsulfonic acids and/or aminoarylsulfonic acids and the resulting hexamethyl cyclotrisilazane represented by the formula: --Me.sub.2 SiNH).sub.3 -- can be recovered by distilling off the same outside the reaction system. According to the method of the present invention, highly pure hexamethyl cyclotrisilazane can be industrially prepared in good efficiency and in a high yield. In particular, if octamethyl cyclotetrasilazane which can be industrially prepared from cheap dimethyldichlorosilane is used as a starting material, hexamethyl cyclotrisilazane can also be prepared at a low cost. Thus, the method of the present invention has enough practical value in the organic silicon industries.
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公开(公告)号：US4958040A
公开(公告)日：1990-09-18
申请号：US410202
申请日：1989-09-21
IPC分类号： B01J27/125 , C07B61/00 , C07F7/12
CPC分类号： C07F7/126
摘要： A process for preparing diorganohalogenosilanes wherein diorganodihalogenosilanes are reacted with at least one organosilicon compound having at least one .tbd.Si--H bond in the molecule and selected from polysilanes, polycarbosilanes and polysilphenylenes is described. This reaction proceeds in the presence of a Lewis acid.
摘要翻译： 描述了制备二有机二卤代硅烷与至少一种在分子中具有至少一个3BOND Si-H键的有机硅化合物反应并选自聚硅烷，聚碳硅烷和聚苯乙烯的二有机卤代硅烷的方法。 该反应在路易斯酸存在下进行。
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公开(公告)号：US06174650B1
公开(公告)日：2001-01-16
申请号：US09010830
申请日：1998-01-22
申请人： Masayuki Endo , Toru Fukumoto , Hiromi Ohsaki
发明人： Masayuki Endo , Toru Fukumoto , Hiromi Ohsaki
IPC分类号： G03F700
CPC分类号： G03F7/0757 , G03F7/00 , G03F7/0045 , G03F7/0751 , G03F7/70991 , H01L21/3121
摘要： In a clean room, after conducting a surface treatment on the surface of a semiconductor substrate with 4-trimethylsiloxy-3-penten-2-one, the treated surface of the semiconductor substrate is coated with a chemically amplified resist, thereby forming a first resist film. Then, the first resist film is successively subjected to exposure, PEB and development, thereby forming a first resist pattern of the chemically amplified resist. Next, in the same clean room, after conducting a surface treatment on the surface of the semiconductor substrate with 4-dimethyl-n-hexylsiloxy-3-penten-2-one, the treated surface of the semiconductor substrate is coated with a non-chemically amplified resist, thereby forming a second resist film. Then, the second resist film is successively subjected to the exposure, the PEB and the development, thereby forming a second resist pattern of the non-chemically amplified resist.
摘要翻译： 在洁净室中，在用4-三甲基甲硅烷氧基-3-戊烯-2-酮在半导体衬底的表面进行表面处理后，用化学放大抗蚀剂涂覆半导体衬底的处理表面，从而形成第一抗蚀剂 电影。 然后，依次对第一抗蚀剂膜进行曝光，PEB显影，形成化学放大抗蚀剂的第一抗蚀剂图案。 接下来，在相同的洁净室中，在用4-二甲基 - 正己基甲硅烷氧基-3-戊烯-2-酮在半导体基板的表面上进行表面处理后， 化学放大抗蚀剂，从而形成第二抗蚀剂膜。 然后，第二抗蚀剂膜依次经受曝光，PEB和显影，由此形成非化学放大抗蚀剂的第二抗蚀剂图案。
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公开(公告)号：US5393815A
公开(公告)日：1995-02-28
申请号：US95353
申请日：1993-07-20
IPC分类号： C09D183/04 , C09D5/25 , C09D183/00 , C09D183/16 , H01B3/46 , C08K5/24
CPC分类号： H01B3/46 , C09D183/16
摘要： By blending a silazane with an organic silicon polymer such as polycarbosilane and polysilazane and inorganic powder such as alumina and silica, there is obtained a coating composition which can be applied and baked onto metallic and non-metallic substrates to form dielectric coatings which are improved in many properties including substrate adhesion, hardness, electrical insulation, heat resistance, water resistance, and chemical resistance.
摘要翻译： 通过将硅氮烷与有机硅聚合物如聚碳硅烷和聚硅氮烷以及无机粉末如氧化铝和二氧化硅共混，得到一种涂料组合物，可以在金属和非金属基材上涂覆和烘烤以形成电介质涂层， 许多性质包括基底粘附性，硬度，电绝缘性，耐热性，耐水性和耐化学性。
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公开(公告)号：US06258972B1
公开(公告)日：2001-07-10
申请号：US08691124
申请日：1996-08-01
申请人： Satoko Nakaoka , Masayuki Endo , Hiromi Ohsaki , Akiko Katsuyama
发明人： Satoko Nakaoka , Masayuki Endo , Hiromi Ohsaki , Akiko Katsuyama
IPC分类号： C07E708
CPC分类号： G03F7/0751
摘要： To the surface of a semiconductor substrate made of silicon, isopropenoxytrimethylsilane is supplied as a surface treating agent to render the surface of the semiconductor substrate hydrophobic and increase adhesion to the semiconductor substrate. Thus, Si(CH3)3 (trimethylsilyl group) is substituted for the hydrogen atom of an OH group on the surface of the semiconductor substrate, resulting in (CH3)2CO (acetone). Subsequently, a chemically amplified resist is applied to the surface of the semiconductor substrate and exposed to light by using a desired mask, followed sequentially by PEB and development for forming a pattern. Since the surface treating agent does not generate ammonia, there can be formed a pattern in excellent configuration with no insoluble skin layer formed thereon.
摘要翻译： 向由硅制成的半导体衬底的表面提供异丙烯氧基三甲基硅烷作为表面处理剂，使半导体衬底的表面疏水化并增加对半导体衬底的粘合性。 因此，将Si（CH 3）3（三甲基甲硅烷基）取代为半导体衬底的表面上的OH基的氢原子，得到（CH 3）2 CO（丙酮）。 随后，通过使用所需的掩模将化学放大型抗蚀剂施加到半导体衬底的表面并暴露于光，然后依次由PEB和显影形成图案。 由于表面处理剂不产生氨，因此可以形成具有优异构型的图案，其上不形成不溶性表皮层。
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公开(公告)号：US5951820A
公开(公告)日：1999-09-14
申请号：US882160
申请日：1997-06-25
CPC分类号： B01D5/0012 , B01D7/00 , C23C16/4402 , Y10S159/16 , Y10S159/23 , Y10S165/911 , Y10S165/912
摘要： An organometallic compound represented by the general formula (I) ##STR1## or the general formula (II)R-M.sup.2 -R (II)is evaporated, and then passed through the inner tube of a heat exchanger to be precipitated. The heat exchanger is then heated to re-evaporate the organometallic compound, and the re-evaporated organometallic compound is then precipitated in a filling container which is connected to said heat exchanger and cooled down to a prescribed temperature to fill the container.
摘要翻译： 将由通式（I）或通式（II）表示的有机金属化合物R-M2-R（II）蒸发，然后通过热交换器的内管沉淀。 然后将热交换器加热以再蒸发有机金属化合物，然后将再蒸发的有机金属化合物沉淀在与所述热交换器连接的填充容器中并冷却至规定温度以填充容器。
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