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公开(公告)号：US5218232A
公开(公告)日：1993-06-08
申请号：US705596
申请日：1991-05-24
IPC分类号： H01L23/52 , C23C14/56 , C23C16/04 , H01L21/28 , H01L21/3205 , H01L21/8238 , H01L23/532 , H01L29/49
CPC分类号： H01L29/4933 , C23C14/568 , C23C16/04 , H01L21/823842 , H01L21/823871 , H01L23/53271 , H01L29/4925 , H01L2924/0002 , Y10S148/02
摘要： A semiconductor device, wherein an electrode wiring, which is in contact with semiconductor layers of mutually different conductive types and serves to connect at least the layers of mutually different conductive types, comprises a first portion principally composed of the same component as the principal component of the semiconductor layers, and a second portion consisting of a metal.
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公开(公告)号：US5700719A
公开(公告)日：1997-12-23
申请号：US414049
申请日：1995-03-30
IPC分类号： H01L23/52 , C23C14/56 , C23C16/04 , H01L21/28 , H01L21/3205 , H01L21/8238 , H01L23/532 , H01L29/49 , H01L21/443
CPC分类号： H01L29/4933 , C23C14/568 , C23C16/04 , H01L21/823842 , H01L21/823871 , H01L23/53271 , H01L29/4925 , H01L2924/0002 , Y10S148/02
摘要： A semiconductor device, wherein an electrode wiring, which is in contact with semiconductor layers of mutually different conductive types and serves to connect at least he layers of mutually different conductive types, comprises a first portion principally composed of a component same as the principal component of the semiconductor layers, and a second portion consisting of a metal.
摘要翻译： 一种半导体器件，其中与相互不同的导电类型的半导体层接触并且用于至少连接相互不同的导电类型的层的电极布线包括主要由与主要成分相同的部件组成的第一部分 半导体层和由金属组成的第二部分。
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3.发明授权Method for making semiconductor device with metal deposited on electron donating surface of gate electrode 失效制造半导体器件的方法，金属沉积在栅电极的给电子表面上
公开(公告)号：US5599741A
公开(公告)日：1997-02-04
申请号：US479385
申请日：1995-06-07
IPC分类号： H01L21/266 , H01L21/336 , H01L21/768 , H01L29/49 , H01L29/78 , H01L21/44 , H01L21/22
CPC分类号： H01L29/6659 , H01L21/266 , H01L21/76879 , H01L29/4925 , H01L29/66659 , H01L29/7835 , H01L29/7836
摘要： A semiconductor device including a field effect transistor has source and drain areas formed on the main surface of a semiconductor substrate and a gate electrode formed on the main surface across a gate insulation film. The gate electrode has a first electrode portion with an electron donating surface and a second electrode portion consisting of metal formed on the first electrode portion.
摘要翻译： 包括场效应晶体管的半导体器件具有形成在半导体衬底的主表面上的源极和漏极区域以及跨越栅极绝缘膜的主表面上形成的栅电极。 栅电极具有形成在第一电极部分上的具有供电子表面的第一电极部分和由金属组成的第二电极部分。
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4.发明授权Process for preparing semiconductor substrate by bonding to a metallic surface 失效通过结合到金属表面来制备半导体衬底的工艺
公开(公告)号：US5536361A
公开(公告)日：1996-07-16
申请号：US376373
申请日：1995-01-23
IPC分类号： H01L21/02 , H01L21/762 , H01L21/768 , H01L27/12 , H01L31/18 , H01L21/306
CPC分类号： H01L31/1892 , H01L21/76256 , H01L21/768 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S438/96
摘要： A process for preparing a semiconductor substrate comprises a step of making a silicon substrate porous, a step of forming a non-porous silicon monocrystalline layer on the resulting porous substrate, a step of bonding the surface of the non-porous silicon monocrystalline layer to another substrate having a metallic surface, and a step of removing the porous silicon layer of the bonded substrates by selective etching.
摘要翻译： 制备半导体衬底的方法包括使硅衬底多孔的步骤，在所得多孔衬底上形成无孔硅单晶层的步骤，将非多孔硅单晶层的表面接合到另一个的步骤 具有金属表面的基板，以及通过选择性蚀刻去除接合的基板的多孔硅层的步骤。
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5.发明授权Method of making a planar wiring in an insulated groove using alkylaluminum hydride 失效使用烷基氢化铝在绝缘槽中制作平面布线的方法
公开(公告)号：US5614439A
公开(公告)日：1997-03-25
申请号：US393928
申请日：1995-02-21
申请人： Fumio Murooka , Tetsuo Asaba , Shigeyuki Matsumoto , Osamu Ikeda , Toshihiko Ichise , Yukihiko Sakashita , Shunsuke Inoue
发明人： Fumio Murooka , Tetsuo Asaba , Shigeyuki Matsumoto , Osamu Ikeda , Toshihiko Ichise , Yukihiko Sakashita , Shunsuke Inoue
IPC分类号： H01L21/00 , H01L21/285 , H01L21/677 , H01L21/768 , H01L23/522 , H01L21/44
CPC分类号： H01L21/67167 , H01L21/28556 , H01L21/67173 , H01L21/67207 , H01L21/67745 , H01L21/76879 , H01L23/5226 , H01L2924/0002 , Y10S148/05
摘要： A semiconductor device with a high-density wiring structure, and a producing method for such device are provided. The semiconductor device has a substrate such as silicon, an insulation layer laminated on the substrate and having a groove or a hole, and a wiring of a conductive material formed in the groove or hole in the insulation layer. The wiring is formed by depositing a conductive material such as aluminum or an aluminum alloy in the groove or hole of the insulation layer by a CVD method utilizing alkylaluminum hydride gas and hydrogen. The groove or hole can be formed by an ordinary patterning method combined with etching.
摘要翻译： 提供具有高密度布线结构的半导体器件及其制造方法。 半导体器件具有诸如硅的衬底，层叠在衬底上的具有凹槽或孔的绝缘层以及形成在绝缘层中的凹槽或孔中的导电材料的布线。 通过使用烷基氢化铝气体和氢气的CVD方法在绝缘层的凹槽或孔中沉积导电材料如铝或铝合金而形成布线。 凹槽或孔可以通过与蚀刻结合的普通图案化方法形成。
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6.发明授权Handwriting data generating system, handwriting data generating method, and computer program product 有权手写数据生成系统，手写数据生成方法和计算机程序产品公开(公告)号：US08872805B2
公开(公告)日：2014-10-28
申请号：US13046102
申请日：2011-03-11
申请人： Shigeyuki Matsumoto
发明人： Shigeyuki Matsumoto
IPC分类号： G06F3/033 , G06F3/0354 , G06F3/0488
CPC分类号： G06F3/04883 , G06F3/03545
摘要： A handwriting data generating system includes: a handwriting device that is used to handwrite information on a display surface on which an image is displayed; and a handwriting data generating device that generates handwriting data for displaying the handwriting of the handwritten information on the display surface, wherein the handwriting device includes a signal transmitting unit that transmits a signal indicating at least one of a position and a condition of the handwriting device, and the handwriting data generating device includes: a handwriting data generating unit that generates the handwriting data; and a handwriting data changing unit that changes the handwriting data so as to display the handwriting on the display surface in a different display format depending on details of the signal.
摘要翻译： 一种手写数据生成系统，包括：手写装置，用于在显示图像的显示面上手写信息; 以及手写数据生成装置，其生成用于在显示面上显示手写信息的笔迹的手写数据，其中，所述笔迹装置包括信号发送单元，所述信号发送单元发送指示所述笔迹装置的位置和状态中的至少一个的信号 并且所述手写数据生成装置包括：手写数据生成单元，其生成所述笔迹数据; 以及手写数据改变单元，其根据信号的细节改变手写数据，以便以不同的显示格式在显示表面上显示手写。
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公开(公告)号：US08083391B2
公开(公告)日：2011-12-27
申请号：US11941535
申请日：2007-11-16
申请人： Shigeyuki Matsumoto
发明人： Shigeyuki Matsumoto
IPC分类号： F21V7/04
CPC分类号： G02B6/0031 , G02B6/0068
摘要： A planar light source of the present invention has three lamps along a side face of a rectangular light guide plate. The lamps are arranged along an incidence plane which is one side plane of the light guide plate. The three lamps are arranged so as to be kept apart from each other at a given interval, and two lamps are arranged in close proximity to the incidence plane that is one side plane of the light guide plate. One lamp is arranged away from the incidence plane that is one side plane of the light guide plate with respect to the two lamps. A lamp reflector is formed continuously so as to become close to the three lamps and surround the respective three lamps, and assumes a substantially convex cross-sectional shape.
摘要翻译： 本发明的平面光源具有沿着矩形导光板的侧面的三个灯。 灯沿着作为导光板的一个侧面的入射平面布置。 这三个灯被布置成以给定的间隔彼此分开，并且两个灯被布置成紧邻作为导光板的一个侧面的入射平面。 一个灯被布置成远离相对于两个灯的导光板的一个侧面的入射平面。 连续地形成灯反射器，以便变得靠近三个灯并且围绕相应的三个灯，并且呈现大致凸形的横截面形状。
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公开(公告)号：US07062184B2
公开(公告)日：2006-06-13
申请号：US10889214
申请日：2004-07-13
CPC分类号： G03G15/169
摘要： An IOT controller of an image formation device is provided with an NvRAM. Correction coefficients relating to various parameters, which are specified for each of paper types in advance, are stored in the NvRAM. The NvRAM is provided with a user setting region, and when it is desired to form an image at an unusual paper, parameters of this paper can be inputted by operation of a control panel. When image formation is to be implemented, the IOT controller, after selection of a paper type at the control panel, reads out correction coefficients of the parameters relating to the selected paper type from the NvRAM, implements transfer processing in accordance with these correction coefficients, and forms a high-quality image.
摘要翻译： 图像形成装置的IOT控制器具有NvRAM。 与各种纸张类型预先指定的各种参数相关的校正系数存储在NvRAM中。 NvRAM具有用户设置区域，当希望在异常纸张上形成图像时，可以通过控制面板的操作输入本文的参数。 当要实现图像形成时，IOT控制器在控制面板上选择纸张类型之后，从NvRAM中读出与所选纸张类型相关的参数的校正系数，根据这些校正系数实现传送处理， 并形成高质量的图像。
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公开(公告)号：US20050041989A1
公开(公告)日：2005-02-24
申请号：US10889214
申请日：2004-07-13
CPC分类号： G03G15/169
摘要： An IOT controller of an image formation device is provided with an NvRAM. Correction coefficients relating to various parameters, which are specified for each of paper types in advance, are stored in the NvRAM. The NvRAM is provided with a user setting region, and when it is desired to form an image at an unusual paper, parameters of this paper can be inputted by operation of a control panel. When image formation is to be implemented, the IOT controller, after selection of a paper type at the control panel, reads out correction coefficients of the parameters relating to the selected paper type from the NvRAM, implements transfer processing in accordance with these correction coefficients, and forms a high-quality image.
摘要翻译： 图像形成装置的IOT控制器具有NvRAM。 与各种纸张类型预先指定的各种参数相关的校正系数存储在NvRAM中。 NvRAM具有用户设置区域，当希望在异常纸张上形成图像时，可以通过控制面板的操作输入本文的参数。 当要实现图像形成时，IOT控制器在控制面板上选择纸张类型之后，从NvRAM中读出与所选纸张类型相关的参数的校正系数，根据这些校正系数实现传送处理， 并形成高质量的图像。
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公开(公告)号：US5607733A
公开(公告)日：1997-03-04
申请号：US475464
申请日：1995-06-07
CPC分类号： G03F1/22
摘要： A process for preparing an X-ray mask structure comprises an X-ray transmissive film, an X-ray absorptive member held on the X-ray transmissive film and supporting frame for supporting the X-ray transmissive film. The X-ray absorptive member is constituted of crystalline grains having a grain boundary size of 1 .mu.m or larger, or has a density of 90% or more relative to the density of the bulk material.
摘要翻译： 制备X射线掩模结构的方法包括X射线透过膜，X射线透射膜上保持的X射线吸收元件和用于支撑X射线透过膜的支撑框架。 X射线吸收构件由晶粒尺寸为1μm以上的晶粒构成，或者相对于散装材料的密度为90％以上的密度。
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