公开(公告)号：US5218232A

公开(公告)日：1993-06-08

申请号：US705596

申请日：1991-05-24

申请人： Hiroshi Yuzurihara ,  Shunsuke Inoue ,  Mamoru Miyawaki ,  Shigeyuki Matsumoto

发明人： Hiroshi Yuzurihara ,  Shunsuke Inoue ,  Mamoru Miyawaki ,  Shigeyuki Matsumoto

IPC分类号： H01L23/52 ,  C23C14/56 ,  C23C16/04 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/8238 ,  H01L23/532 ,  H01L29/49

CPC分类号： H01L29/4933 ,  C23C14/568 ,  C23C16/04 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/53271 ,  H01L29/4925 ,  H01L2924/0002 ,  Y10S148/02

摘要： A semiconductor device, wherein an electrode wiring, which is in contact with semiconductor layers of mutually different conductive types and serves to connect at least the layers of mutually different conductive types, comprises a first portion principally composed of the same component as the principal component of the semiconductor layers, and a second portion consisting of a metal.

公开(公告)号：US5700719A

公开(公告)日：1997-12-23

申请号：US414049

申请日：1995-03-30

申请人： Hiroshi Yuzurihara ,  Shunsuke Inoue ,  Mamoru Miyawaki ,  Shigeyuki Matsumoto

发明人： Hiroshi Yuzurihara ,  Shunsuke Inoue ,  Mamoru Miyawaki ,  Shigeyuki Matsumoto

IPC分类号： H01L23/52 ,  C23C14/56 ,  C23C16/04 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/8238 ,  H01L23/532 ,  H01L29/49 ,  H01L21/443

CPC分类号： H01L29/4933 ,  C23C14/568 ,  C23C16/04 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/53271 ,  H01L29/4925 ,  H01L2924/0002 ,  Y10S148/02

摘要： A semiconductor device, wherein an electrode wiring, which is in contact with semiconductor layers of mutually different conductive types and serves to connect at least he layers of mutually different conductive types, comprises a first portion principally composed of a component same as the principal component of the semiconductor layers, and a second portion consisting of a metal.

摘要翻译： 一种半导体器件，其中与相互不同的导电类型的半导体层接触并且用于至少连接相互不同的导电类型的层的电极布线包括主要由与主要成分相同的部件组成的第一部分 半导体层和由金属组成的第二部分。

公开(公告)号：US5599741A

公开(公告)日：1997-02-04

申请号：US479385

申请日：1995-06-07

申请人： Shigeyuki Matsumoto ,  Hiroshi Yuzurihara ,  Mamoru Miyawaki ,  Shunsuke Inoue ,  Jun Nakayama

发明人： Shigeyuki Matsumoto ,  Hiroshi Yuzurihara ,  Mamoru Miyawaki ,  Shunsuke Inoue ,  Jun Nakayama

IPC分类号： H01L21/266 ,  H01L21/336 ,  H01L21/768 ,  H01L29/49 ,  H01L29/78 ,  H01L21/44 ,  H01L21/22

CPC分类号： H01L29/6659 ,  H01L21/266 ,  H01L21/76879 ,  H01L29/4925 ,  H01L29/66659 ,  H01L29/7835 ,  H01L29/7836

摘要： A semiconductor device including a field effect transistor has source and drain areas formed on the main surface of a semiconductor substrate and a gate electrode formed on the main surface across a gate insulation film. The gate electrode has a first electrode portion with an electron donating surface and a second electrode portion consisting of metal formed on the first electrode portion.

摘要翻译： 包括场效应晶体管的半导体器件具有形成在半导体衬底的主表面上的源极和漏极区域以及跨越栅极绝缘膜的主表面上形成的栅电极。 栅电极具有形成在第一电极部分上的具有供电子表面的第一电极部分和由金属组成的第二电极部分。

公开(公告)号：US5994757A

公开(公告)日：1999-11-30

申请号：US383186

申请日：1995-02-03

申请人： Takeshi Ichikawa ,  Mamoru Miyawaki ,  Shunsuke Inoue

发明人： Takeshi Ichikawa ,  Mamoru Miyawaki ,  Shunsuke Inoue

IPC分类号： G11C17/06 ,  G11C17/16 ,  H01L23/525 ,  H01L27/10 ,  H01L29/00 ,  H01L29/04 ,  H01L29/861

CPC分类号： G11C17/16 ,  H01L23/5252 ,  H01L2924/0002

摘要： An electronic circuit device includes first and second conductors and a high-resistance member arranged therebetween. The high-resistance member consists of a material which changes from a high resistivity state to a low resistivity state in accordance with a voltage applied between the first and second conductors.

摘要翻译： 电子电路装置包括第一和第二导体以及设置在它们之间的高电阻部件。 高电阻部件由根据施加在第一和第二导体之间的电压从高电阻率状态变为低电阻率状态的材料构成。

公开(公告)号：US5812231A

公开(公告)日：1998-09-22

申请号：US492247

申请日：1995-06-19

申请人： Tetsunobu Kochi ,  Mamoru Miyawaki ,  Shunsuke Inoue ,  Takanori Watanabe

发明人： Tetsunobu Kochi ,  Mamoru Miyawaki ,  Shunsuke Inoue ,  Takanori Watanabe

IPC分类号： G02F1/1333 ,  G02F1/133 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/20 ,  G09G3/36 ,  H01L27/12 ,  H01L27/13 ,  H01L29/786 ,  G09G5/00 ,  H01L29/04

CPC分类号： G09G3/3688 ,  G09G3/3648 ,  H01L27/1203 ,  H01L27/13 ,  G02F1/13454 ,  G02F2001/136281 ,  G09G2310/0248 ,  G09G2310/0297 ,  G09G3/2011

摘要： A high-density impurity semiconductor region having the same conductivity type as a single-crystal silicon substrate is formed in addition to a main circuit portion of a peripheral circuit on the single-crystal silicon substrate. This semiconductor region is connected to a given potential point directly leading to an electric source. Alternatively, at a part of the peripheral drive circuit, a high-density impurity semiconductor region having a conductivity type reverse to that of the single-crystal silicon substrate is formed, and this semiconductor region is connected to a given potential point directly leading to an electric source. This can solve the problem that photocarriers (electrons and/or holes) caused by the light having not cut off and having entered into the single-crystal silicon region may enter into the peripheral drive circuit through the single-crystal silicon substrate to cause misoperation of the circuit.

摘要翻译： 除了在单晶硅衬底上的外围电路的主电路部分之外，还形成具有与单晶硅衬底相同的导电类型的高密度杂质半导体区域。 该半导体区域连接到直接通向电源的给定电位点。 或者，在外围驱动电路的一部分，形成具有与单晶硅基板相反的导电类型的高密度杂质半导体区域，并且该半导体区域直接连接到给定的电位点， 电源。 这可以解决由未被切断并进入单晶硅区域的光引起的光载流子（电子和/或空穴）可能通过单晶硅衬底进入外围驱动电路的问题，导致误操作 电路。

公开(公告)号：US5757054A

公开(公告)日：1998-05-26

申请号：US714439

申请日：1996-09-16

申请人： Mamoru Miyawaki ,  Shunsuke Inoue

发明人： Mamoru Miyawaki ,  Shunsuke Inoue

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L27/06 ,  H01L29/04 ,  H01L31/036

CPC分类号： G02F1/136277 ,  H01L27/0688 ,  G02F1/13454

摘要： The present invention solves problems as follows: a problem that, since light for displaying enters into a semiconductor substrate, carrier induced by light occurs in the semiconductor substrate, potential of the substrate fluctuates, and hence display characteristics become worse; a problem that, in the semiconductor substrate, voltages are applied to the peripheral driving circuits so as to operate the peripheral driving circuits formed in a single-crystal area, which makes display characteristics worse by the voltages being conducted to the display area through the substrate; and a problem that, in case potentials of adjacent pixels greatly differ, the difference locally changes. For this purpose, in a display unit including an active matrix substrate having an image display portion being provided with a plurality of switches and a driving circuit for supplying driving signals to the switches around the image display portion, an opposing substrate opposing the active matrix substrate and having a transparent electrode, and a liquid crystal material between both of the active matrix substrate and the opposing substrate, heavily doped impurity regions having impurity density heavier than that of the semiconductor substrate are formed in the image display portion, and the heavily doped impurity regions are connected to a fixed potential around the image display portion.

摘要翻译： 本发明解决了以下问题：由于用于显示的光进入半导体衬底，所以在半导体衬底中产生由光引起的载流子，所以衬底的电位变动，因此显示特性变差; 在半导体基板中，向周边驱动电路施加电压以对形成在单晶区域中的外围驱动电路进行操作的问题在于，通过通过基板向显示区域传导的电压使显示特性变差 ; 以及在相邻像素的电位大大不同的情况下，差异局部变化的问题。 为此，在包括具有图像显示部分的多个开关的有源矩阵基板和用于向图像显示部分周围的开关提供驱动信号的驱动电路的显示单元中，与有源矩阵基板相对的相对基板 并且在有源矩阵基板和相对基板两者之间具有透明电极和液晶材料，在图​​像显示部分中形成具有比半导体基板重的杂质密度的重掺杂杂质区，并且重掺杂杂质 区域连接到图像显示部分周围的固定电位。

公开(公告)号：US06329265B1

公开(公告)日：2001-12-11

申请号：US09305486

申请日：1999-05-06

申请人： Mamoru Miyawaki ,  Yasushi Kawasumi ,  Shunsuke Inoue ,  Yutaka Akino ,  Toru Koizumi ,  Tetsunobu Kohchi

发明人： Mamoru Miyawaki ,  Yasushi Kawasumi ,  Shunsuke Inoue ,  Yutaka Akino ,  Toru Koizumi ,  Tetsunobu Kohchi

IPC分类号： H01L2130

CPC分类号： H01L21/3226 ,  H01L21/2007 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/76281 ,  H01L21/76283 ,  H01L21/76286 ,  H01L23/544 ,  H01L27/092 ,  H01L27/1203 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having a semiconductor layer formed on a substrate having an insulating surface, comprises a first region formed by processing the semiconductor layer from one major surface thereof, and a second region formed by processing the semiconductor layer from the other major surface, the first and second regions cooperating to constitute a semiconductor function element, isolation region or the like.

摘要翻译： 具有形成在具有绝缘表面的基板上的半导体层的半导体器件包括通过从其主表面处理半导体层形成的第一区域和通过从另一个主表面处理半导体层而形成的第二区域，第一区域 和构成半导体功能元件，隔离区域等的第二区域。

公开(公告)号：US6104431A

公开(公告)日：2000-08-15

申请号：US881079

申请日：1997-06-24

申请人： Shunsuke Inoue ,  Mamoru Miyawaki

发明人： Shunsuke Inoue ,  Mamoru Miyawaki

IPC分类号： G03B13/36 ,  A61B3/113 ,  G02B7/28 ,  G02B27/40 ,  G03B13/02 ,  H04N5/225 ,  H04N5/232 ,  H04N5/64

CPC分类号： H04N5/23293 ,  G03B13/02 ,  A61B3/113 ,  G03B2213/025

摘要： A visual axis detecting method and apparatus comprising a device that illuminates an eye of an observer with a scanning light source, a photoelectric conversion device that receives reflection light from the eye of the observer, and an arithmetic device that detects Purkinje images and an iris image or a pupil image of the observer's eye on the basis of an output from the photoelectric conversion device, and that detects a direction of a visual axis of the observer from positions of the detected images.

摘要翻译： 一种视轴检测方法和装置，包括用扫描光源照射观察者的眼睛的装置，接收来自观察者的眼睛的反射光的光电转换装置，以及检测浦肯野图像和虹膜图像的运算装置 或基于光电转换装置的输出的观察者的眼睛的瞳孔图像，并且从检测到的图像的位置检测观察者的视轴的方向。

公开(公告)号：US5923391A

公开(公告)日：1999-07-13

申请号：US491732

申请日：1995-06-19

申请人： Takanori Watanabe ,  Mamoru Miyawaki ,  Shunsuke Inoue ,  Tetsunobu Kochi

发明人： Takanori Watanabe ,  Mamoru Miyawaki ,  Shunsuke Inoue ,  Tetsunobu Kochi

IPC分类号： G02F1/1337 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1333 ,  G02F1/136

CPC分类号： G02F1/133512 ,  G02F1/1337 ,  G02F1/134327 ,  G02F2001/13373

摘要： A liquid crystal display device comprises two parallel substrates holding a liquid crystal material filling space between two parallel substrates, wherein one of the two parallel substrates is provided, for each picture element, with a transparent electrode and a lightshielding layer which has an opening located inside the outer periphery of the transparent electrode as observed from a direction perpendicular to the two substrates, and the lightshielding layer is designed so that the distance from an outer periphery of the transparent electrode to an outer periphery of the opening is set substantially larger on the side where rubbing of one substrate is started than on the side where the rubbing is ended, whereas it is set substantially larger on the side where the rubbing of the other substrate is ended than on the side where the rubbing is started as observed from a direction perpendicular to the two substrates.

摘要翻译： 一种液晶显示装置，包括：两个平行的基板，其在两个平行的基板之间保持液晶材料填充空间，其中为每个图像提供两个平行基板中的一个，其中透明电极和位于内部的开口的遮光层 从垂直于两个基板的方向观察透明电极的外周，并且设计遮光层，使得从透明电极的外周到开口的外周的距离在侧面被设定得大得多 其中一个基板的摩擦开始于摩擦结束的一侧，而在另一个基板的摩擦结束的一侧被设定得大于从垂直方向观察到的摩擦开始的那一侧 到两个基板。

公开(公告)号：US5886365A

公开(公告)日：1999-03-23

申请号：US490300

申请日：1995-06-14

申请人： Tetsunobu Kouchi ,  Mamoru Miyawaki ,  Shunsuke Inoue ,  Takanori Watanabe

发明人： Tetsunobu Kouchi ,  Mamoru Miyawaki ,  Shunsuke Inoue ,  Takanori Watanabe

IPC分类号： G02F1/1333 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/36 ,  G11C7/10 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  G09G3/3648 ,  G09G3/3677 ,  G09G3/3688 ,  G11C7/1006 ,  H01L27/13 ,  H01L27/1255

摘要： A small-size and large-capacitance capacitor is provided for the peripheral driving circuit of a liquid crystal display device. A capacitor exhibiting crystalline property is provided on a monocrystalline silicon in the peripheral driving circuit of a liquid crystal display device using an insulator film deposition process used to manufacture TFTs (thin-film transistors) of a display pixel portion and the peripheral driving circuit. The capacitor, using monocrystalline silicon as electrodes and an insulator on the monocrsytalline silicon as a dielectric, has a small size and a large capacitance as compared with a capacitor manufactured on amorphous silicon or monocrytalline silicon, and is thus capable of high quality display.

摘要翻译： 为液晶显示装置的外围驱动电路提供小型和大容量的电容器。 在使用用于制造显示像素部分的TFT（薄膜晶体管）和外围驱动电路的绝缘膜沉积工艺的液晶显示装置的外围驱动电路中，单晶硅上的单晶硅提供显示结晶特性的电容器。 与在非晶硅或单晶硅上制造的电容器相比，使用单晶硅作为电极的电容器和作为电介质的单晶硅的绝缘体具有小尺寸和大的电容，因此能够进行高质量的显示。