公开(公告)号：US09099367B2

公开(公告)日：2015-08-04

申请号：US13541996

申请日：2012-07-05

Applicant: Hirosige Goto ,  Yi Tae Kim

Inventor： Hirosige Goto ,  Yi Tae Kim

IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/376 ,  H04N5/355 ,  H04N5/365 ,  H04N17/00

CPC classification number: H01L27/1461 ,  H01L27/14616 ,  H04N5/355 ,  H04N5/365 ,  H04N5/3745 ,  H04N5/376 ,  H04N17/002

Abstract: An image sensor includes a pixel array and a calibration circuit. The pixel array includes a plurality of pixels each of which includes a photoelectric conversion device configured to absorb incident light and generate a photocharge, a transfer transistor configured to transfer the photocharge from the photoelectric conversion device to a floating diffusion node, and a reset transistor configured to reset the floating diffusion node. The calibration circuit is connected to the reset transistor of each pixel, and is configured to apply a different voltage to each pixel and adjust an amount of photocharge generated by the photoelectric conversion device in each pixel.

Abstract translation: 图像传感器包括像素阵列和校准电路。 像素阵列包括多个像素，每个像素包括被配置为吸收入射光并产生光电荷的光电转换装置，被配置为将光电荷从光电转换装置转移到浮动扩散节点的转移晶体管，以及复位晶体管， 以重置浮动扩散节点。 校准电路连接到每个像素的复位晶体管，并且被配置为向每个像素施加不同的电压并且调整由每个像素中的光电转换器件产生的光电荷的量。

公开(公告)号：US08021912B2

公开(公告)日：2011-09-20

申请号：US12320543

申请日：2009-01-29

Applicant: Yi Tae Kim ,  Kyung Ho Lee ,  Sae-Young Kim ,  Yun Ho Jang ,  Jung Chak Ahn

Inventor： Yi Tae Kim ,  Kyung Ho Lee ,  Sae-Young Kim ,  Yun Ho Jang ,  Jung Chak Ahn

IPC: H01L21/00

CPC classification number: H01L27/14643 ,  H01L27/14623 ,  H01L27/14632

Abstract: A method of manufacturing an image sensor is provided. In this method, a photoelectric conversion unit may be formed within a semiconductor substrate, wherein the semiconductor substrate includes an active pixel region and an optical black region. An annealing layer may be formed on the active pixel region and the optical black region and etched so that the annealing layer covers at least a portion of the optical black region. A wiring pattern may be formed on the annealing layer. A light-blocking pattern may be formed on the wiring pattern so as to cover the entire photoelectric conversion unit of the optical black region, thereby blocking light from being incident upon the optical black region.

Abstract translation: 提供一种制造图像传感器的方法。 在该方法中，可以在半导体衬底内形成光电转换单元，其中半导体衬底包括有源像素区域和光学黑色区域。 可以在有源像素区域和光学黑色区域上形成退火层并进行蚀刻，使得退火层覆盖光学黑色区域的至少一部分。 可以在退火层上形成布线图案。 可以在布线图案上形成遮光图案，以覆盖光学黑色区域的整个光电转换单元，从而阻止光入射到光学黑色区域。

公开(公告)号：US20090209058A1

公开(公告)日：2009-08-20

申请号：US12320543

申请日：2009-01-29

Applicant: Yi Tae Kim ,  Kyung Ho Lee ,  Sae-Young Kim ,  Yun Ho Jang ,  Jung Chak Ahn

Inventor： Yi Tae Kim ,  Kyung Ho Lee ,  Sae-Young Kim ,  Yun Ho Jang ,  Jung Chak Ahn

IPC: H01L31/18 ,  H01L21/768

CPC classification number: H01L27/14643 ,  H01L27/14623 ,  H01L27/14632

Abstract: A method of manufacturing an image sensor is provided. In this method, a photoelectric conversion unit may be formed within a semiconductor substrate, wherein the semiconductor substrate includes an active pixel region and an optical black region. An annealing layer may be formed on the active pixel region and the optical black region and etched so that the annealing layer covers at least a portion of the optical black region. A wiring pattern may be formed on the annealing layer. A light-blocking pattern may be formed on the wiring pattern so as to cover the entire photoelectric conversion unit of the optical black region, thereby blocking light from being incident upon the optical black region.

Abstract translation: 提供一种制造图像传感器的方法。 在该方法中，可以在半导体衬底内形成光电转换单元，其中半导体衬底包括有源像素区域和光学黑色区域。 可以在有源像素区域和光学黑色区域上形成退火层并进行蚀刻，使得退火层覆盖光学黑色区域的至少一部分。 可以在退火层上形成布线图案。 可以在布线图案上形成遮光图案，以覆盖光学黑色区域的整个光电转换单元，从而阻止光入射到光学黑色区域。

公开(公告)号：US20120262622A1

公开(公告)日：2012-10-18

申请号：US13445014

申请日：2012-04-12

Applicant: Yi Tae Kim ,  Sung-Ho Choi

Inventor： Yi Tae Kim ,  Sung-Ho Choi

IPC: H04N5/225 ,  H01L31/0224

CPC classification number: H04N5/361 ,  H04N5/3658 ,  H04N5/3745

Abstract: An image sensor includes first pixels in an active region and second pixels in an optical black region of a pixel array. The first pixels have a gate that receives an active transfer control signal, and the second pixels have a gate that receives a passive transfer control signal, like a ground voltage.

Abstract translation: 图像传感器包括有源区域中的第一像素和像素阵列的光学黑色区域中的第二像素。 第一像素具有接收有源传输控制信号的栅极，并且第二像素具有接收诸如接地电压的无源传输控制信号的栅极。