公开(公告)号：US09099367B2

公开(公告)日：2015-08-04

申请号：US13541996

申请日：2012-07-05

Applicant: Hirosige Goto ,  Yi Tae Kim

Inventor： Hirosige Goto ,  Yi Tae Kim

IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/376 ,  H04N5/355 ,  H04N5/365 ,  H04N17/00

CPC classification number: H01L27/1461 ,  H01L27/14616 ,  H04N5/355 ,  H04N5/365 ,  H04N5/3745 ,  H04N5/376 ,  H04N17/002

Abstract: An image sensor includes a pixel array and a calibration circuit. The pixel array includes a plurality of pixels each of which includes a photoelectric conversion device configured to absorb incident light and generate a photocharge, a transfer transistor configured to transfer the photocharge from the photoelectric conversion device to a floating diffusion node, and a reset transistor configured to reset the floating diffusion node. The calibration circuit is connected to the reset transistor of each pixel, and is configured to apply a different voltage to each pixel and adjust an amount of photocharge generated by the photoelectric conversion device in each pixel.

Abstract translation: 图像传感器包括像素阵列和校准电路。 像素阵列包括多个像素，每个像素包括被配置为吸收入射光并产生光电荷的光电转换装置，被配置为将光电荷从光电转换装置转移到浮动扩散节点的转移晶体管，以及复位晶体管， 以重置浮动扩散节点。 校准电路连接到每个像素的复位晶体管，并且被配置为向每个像素施加不同的电压并且调整由每个像素中的光电转换器件产生的光电荷的量。

公开(公告)号：US08953073B2

公开(公告)日：2015-02-10

申请号：US13618076

申请日：2012-09-14

Applicant: Sang Chul Sul ,  Hirosige Goto ,  Kyung Ho Lee

Inventor： Sang Chul Sul ,  Hirosige Goto ,  Kyung Ho Lee

IPC: H04N3/14 ,  H04N5/335 ,  H04N5/359 ,  H01L27/30 ,  H04N5/3745

CPC classification number: H04N5/3745 ,  H01L27/307 ,  H04N5/3591 ,  H04N5/378

Abstract: An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit.

Abstract translation: 提供了图像传感器和图像感测方法。 图像传感器包括半导体衬底; 光电转换器包括偏置单元，其包括第一电极和第二电极，以及有机光电转换层，其选择性地吸收光并将光转换成电子; 与所述第二电极接触以将所述光电转换器与所述半导体衬底连接的通孔; 被配置为存储电子的存储节点; 读出单元，用于将从存储节点传送的电荷转换为图像信号; 包括多个像素的像素阵列，每个像素包括中间绝缘层; 以及输出电路，被配置为从像素阵列读出图像信号。 由有机光电转换层接收的光量由偏置单元的偏置变化来调节。

公开(公告)号：US09673258B2

公开(公告)日：2017-06-06

申请号：US14466395

申请日：2014-08-22

Applicant: Kyo Jin Choo ,  Hirosige Goto ,  Kyu Sik Kim ,  Yun Kyung Kim ,  Kyung Bae Park ,  Jin Ho Seo ,  Sang Chul Sul ,  Kyung Ho Lee ,  Kwang-hee Lee

Inventor： Kyo Jin Choo ,  Hirosige Goto ,  Kyu Sik Kim ,  Yun Kyung Kim ,  Kyung Bae Park ,  Jin Ho Seo ,  Sang Chul Sul ,  Kyung Ho Lee ,  Kwang-hee Lee

IPC: H04N3/14 ,  H01L27/30 ,  H04N5/378 ,  H01L51/42 ,  H04N5/369 ,  H04N5/335 ,  H04N5/3745

CPC classification number: H01L27/307 ,  H01L51/424 ,  H04N5/3698 ,  H04N5/37452 ,  H04N5/378

Abstract: Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.

公开(公告)号：US20140375826A1

公开(公告)日：2014-12-25

申请号：US14310305

申请日：2014-06-20

Applicant: Myung Won Lee ,  Sang Chul Sul ,  Hirosige Goto ,  Sae Young Kim ,  Gwi Deck Ryan Lee ,  Masaru Ishii ,  Kyo Jin Choo

Inventor： Myung Won Lee ,  Sang Chul Sul ,  Hirosige Goto ,  Sae Young Kim ,  Gwi Deck Ryan Lee ,  Masaru Ishii ,  Kyo Jin Choo

IPC: H01L27/30 ,  H04N1/00

CPC classification number: H01L27/307 ,  H01L51/442 ,  H04N5/23229 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

Abstract translation: 一种图像传感器，包括：第一层，其具有形成在半导体衬底中的多组光电二极管，每个组表示2×2的光电二极管阵列，其中2个第一像素被配置为检测第一波长的光和2秒的像素， 检测第二波长的光，每个第一像素定位成与第二像素相邻; 以及与所述第一层重叠的第二层，所述第二层是有机的，具有被配置为检测第三波长的光的多个有机光电二极管，每个有机光电二极管定位成部分地重叠第一层的2个第一光电二极管和2个第二光电二极管。

公开(公告)号：US08836839B2

公开(公告)日：2014-09-16

申请号：US13650839

申请日：2012-10-12

Applicant: Kyo Jin Choo ,  Hirosige Goto ,  Kyu Sik Kim ,  Yun Kyung Kim ,  Kyung Bae Park ,  Jin Ho Seo ,  Sang Chul Sul ,  Kyung Ho Lee ,  Kwang Hee Lee

Inventor： Kyo Jin Choo ,  Hirosige Goto ,  Kyu Sik Kim ,  Yun Kyung Kim ,  Kyung Bae Park ,  Jin Ho Seo ,  Sang Chul Sul ,  Kyung Ho Lee ,  Kwang Hee Lee

IPC: H04N5/335 ,  H01L27/30 ,  H01L31/062 ,  H04N5/3745 ,  H04N5/378

CPC classification number: H01L27/307 ,  H01L51/424 ,  H04N5/3698 ,  H04N5/37452 ,  H04N5/378

Abstract: Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.

Abstract translation: 提供了一种有机像素，其包括具有像素电路的半导体衬底，具有第一接触的互连层和形成在半导体衬底上的第一电极以及形成在互连层上的有机光电二极管。 例如，有机光电二极管包括形成在第一电极上的绝缘层，形成在第一接触件，绝缘层和第二电极之间的第二电极和光电转换区域。 光电转换区域包括给电子有机材料和受电子有机材料。 有机光电二极管还可以包括电连接到第一触点的第二触点。 第二触点和绝缘层之间的水平距离可以小于或等于几微米，例如10微米。