公开(公告)号：US07985685B2

公开(公告)日：2011-07-26

申请号：US12262439

申请日：2008-10-31

申请人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/311

CPC分类号： H01L21/02118 ,  C09G1/02 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76835

摘要： A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.

摘要翻译： 提供了一种制造半导体器件的方法，该方法包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂覆膜，在第一温度下烘烤该涂膜 其不能实现有机成分的交联以获得有机膜前体，使用含有树脂颗粒的浆料将有机膜前体抛光以在凹槽中离开有机膜前体，在第二温度下烘烤左有机膜前体 高于第一温度以除去溶剂以获得嵌入在凹部中的第一有机膜，在绝缘膜上形成第二有机膜，从而获得下面的膜，在基底膜上连续形成中间层和抗蚀剂膜 并对抗蚀剂膜进行图案曝光。

公开(公告)号：US20090124076A1

公开(公告)日：2009-05-14

申请号：US12262439

申请日：2008-10-31

申请人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/4763

CPC分类号： H01L21/02118 ,  C09G1/02 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76835

摘要： A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.

摘要翻译： 提供了一种制造半导体器件的方法，该方法包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂覆膜，在第一温度下烘烤该涂膜 其不能实现有机成分的交联以获得有机膜前体，使用含有树脂颗粒的浆料将有机膜前体抛光以在凹槽中离开有机膜前体，在第二温度下烘烤左有机膜前体 高于第一温度以除去溶剂以获得嵌入在凹部中的第一有机膜，在绝缘膜上形成第二有机膜，从而获得下面的膜，在基底膜上连续形成中间层和抗蚀剂膜 并对抗蚀剂膜进行图案曝光。

公开(公告)号：US20090239373A1

公开(公告)日：2009-09-24

申请号：US12477332

申请日：2009-06-03

申请人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/768 ,  H01L21/306

CPC分类号： H01L21/7681 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/76835

摘要： A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.

摘要翻译： 化学机械抛光方法包括使用包含具有表面官能团的聚合物颗粒和水溶性聚合物的浆料来抛光有机膜。

公开(公告)号：US08119517B2

公开(公告)日：2012-02-21

申请号：US12477332

申请日：2009-06-03

申请人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/4763 ,  H01L21/461

CPC分类号： H01L21/7681 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/76835

摘要： A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.

摘要翻译： 化学机械抛光方法包括使用包含具有表面官能团的聚合物颗粒和水溶性聚合物的浆料来抛光有机膜。

公开(公告)号：US08685857B2

公开(公告)日：2014-04-01

申请号：US12289326

申请日：2008-10-24

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

IPC分类号： H01L21/304 ,  B44C1/22

CPC分类号： H01L21/76808 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L27/10867

摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.

摘要翻译： 公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光 所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒 官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm，具有亲水性部分的表面活性剂。

公开(公告)号：US20090068841A1

公开(公告)日：2009-03-12

申请号：US12289326

申请日：2008-10-24

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

IPC分类号： H01L21/304

CPC分类号： H01L21/76808 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L27/10867

摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.

摘要翻译： 公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光 所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒 官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm和具有亲水部分的表面活性剂。

公开(公告)号：US07452819B2

公开(公告)日：2008-11-18

申请号：US10855529

申请日：2004-05-28

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

IPC分类号： H01L21/302

CPC分类号： H01L21/76808 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L27/10867

摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.

摘要翻译： 公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光 所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒 官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm和具有亲水部分的表面活性剂。

公开(公告)号：US20070224760A1

公开(公告)日：2007-09-27

申请号：US11708532

申请日：2007-02-21

申请人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/336

CPC分类号： H01L27/11543 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684 ,  H01L27/11526

摘要： A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括通过栅极绝缘膜在半导体衬底上连续地形成第一硅膜和掩模膜，在第一硅膜和掩模膜中形成多个沟槽到达半导体衬底的深度，填充多个 的沟槽，去除掩模膜以暴露存在于氧化硅膜之间的第一硅膜，选择性地生长第一硅膜上的第二硅膜，使用表现出pH为 13以下，含有磨粒和阳离子性表面活性剂，从而得到包含第一和第二硅膜的浮栅电极膜，在整个表面上形成电极间绝缘膜，并在电极间绝缘膜上形成控制栅极电极膜。

公开(公告)号：US07416942B2

公开(公告)日：2008-08-26

申请号：US11708532

申请日：2007-02-21

申请人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L21/461

CPC分类号： H01L27/11543 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684 ,  H01L27/11526

摘要： A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括通过栅极绝缘膜在半导体衬底上连续地形成第一硅膜和掩模膜，在第一硅膜和掩模膜中形成多个沟槽到达半导体衬底的深度，填充多个 的沟槽，去除掩模膜以暴露存在于氧化硅膜之间的第一硅膜，选择性地生长第一硅膜上的第二硅膜，使用表现出pH为 13以下，含有磨粒和阳离子性表面活性剂，从而得到包含第一和第二硅膜的浮栅电极膜，在整个表面上形成电极间绝缘膜，并在电极间绝缘膜上形成控制栅极电极膜。

公开(公告)号：US20070111433A1

公开(公告)日：2007-05-17

申请号：US11594726

申请日：2006-11-09

申请人： Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Yukiteru Matsui ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Yukiteru Matsui ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/8242

CPC分类号： H01L27/105 ,  H01L27/11526 ,  H01L27/11543 ,  H01L29/40114 ,  H01L29/66825

摘要： A method for manufacturing a semiconductor device comprises forming a first silicon layer above a semiconductor substrate; forming a stopper layer on said first silicon layer; partially removing said stopper layer and said first silicon layer above said semiconductor substrate to form a plurality of trenches; forming an insulating layer on said stopper layer with inside of said trenches; partially removing said insulating layer to expose said stopper layer; after partially removing said insulating layer, removing said stopper layer to expose said first silicon layer; selectively growing second silicon layer on said exposed first silicon layer; nonselectively growing a third silicon layer on said second silicon layer; and polishing at least a surface of said third silicon layer by performing chemical mechanical polishing.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成第一硅层; 在所述第一硅层上形成阻挡层; 部分地去除所述半导体衬底之上的所述阻挡层和所述第一硅层以形成多个沟槽; 在所述沟槽的内部在所述阻挡层上形成绝缘层; 部分地去除所述绝缘层以暴露所述阻挡层; 在部分地去除所述绝缘层之后，去除所述阻挡层以露出所述第一硅层; 在所述暴露的第一硅层上选择性地生长第二硅层; 在所述第二硅层上非选择地生长第三硅层; 以及通过进行化学机械抛光来抛光所述第三硅层的至少一个表面。