摘要:
A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.
摘要:
A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.
摘要:
A method for manufacturing a semiconductor device is provided, which includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a first slurry containing first resin particles and a water-soluble polymer to planarize a surface of the organic film precursor, and polishing the organic film precursor where the surface is planarized using a second slurry containing second resin particles and a water-soluble polymer to leave the organic film precursor in the recess, thereby exposing the insulating film, an average particle diameter of the second resin particles being smaller than that of the first resin particles.
摘要:
There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.
摘要:
There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.
摘要:
There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.
摘要:
A first electrode film, a ferroelectric film, and a second electrode film are accumulated above a semiconductor in this order, a hard mask is accumulated above the second electrode, scrub cleaning is performed on the surface of the hard mask with an surfactant, the hard mask on which the scrub cleaning is performed has been patterned according to a planar shape of a ferroelectric capacitor, and etching is performed by using as a hard mask the hard mask that has been patterned.
摘要:
A first electrode film, a ferroelectric film, and a second electrode film are accumulated above a semiconductor in this order, a hard mask is accumulated above the second electrode, scrub cleaning is performed on the surface of the hard mask with an surfactant, the hard mask on which the scrub cleaning is performed has been patterned according to a planar shape of a ferroelectric capacitor, and etching is performed by using as a hard mask the hard mask that has been patterned.
摘要:
A polishing pad comprises at least a first layer having a first main surface serving to polish a substrate to be polished and a second main surface, and a second layer positioned to face the second main surface of the first layer and having fine bags arranged therein, fluid being hermetically sealed in the fine bag.
摘要:
Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.