摘要:
An image of a size exceeding a reading surface area of an image input temperature is divided into a plurality of image portions such that the image portions resulting from the division have respective overlap regions. A position detectable mark is attached to each of the overlap regions. The plurality of image portions are joined together into one image by making use of the marks.
摘要:
In an image information retrieval network system having a file station storing a plurality of images to be searched in the form of compressed data by means of coding and at least one terminal station connected to the file station via a transmission line, the file station includes a processor for decoding compressed image data read from an image file to restore an original image, an image processor for processing the restored image data such as extracting a partial area thereof, and a coding processor for data-compressing the processed image data by means of coding. When a user at the terminal station designates a search condition, display mode, and control information for image processing, the file station reads the images satisfying the search condition from the image file, and causes the searched images to be subjected to the image processing designated by the control information. The processed image data are transmitted to the terminal station in the form of compressed data by means of coding.
摘要:
A centrifugal dryer of the present invention includes: a chamber for performing drying processing for plural substrates; a cradle, installed inside chamber, and drying plural substrates by rotation driving in a state of being held therein; and an elastic wave sensor for detecting an elastic wave generating upon striking of a chip from plural substrates to said chamber during the processing therefor.
摘要:
A glass substrate-holding tool employed during the production of a reflective mask blank for EUV lithography includes an electrostatic chuck and a mechanical chuck. A caught and held portion of a glass substrate caught and held by the electrostatic chuck, and pressed portions of the glass substrate pressed by the mechanical chuck are located outside a quality-guaranteed region on each of a film deposition surface and a rear surface of the glass substrate. The sum of a catching and holding force applied to the glass substrate by the electrostatic chuck and a holding force applied to the glass substrate by the mechanical chuck is at least 200 kgf. A pressing force per unit area applied to the glass substrate by the mechanical chuck is at most 25 kgf/mm2.
摘要:
Provision of a process for producing an EUV mask blank wherein formation of scars of a glass substrate surface or a chuck surface due to sandwiching of foreign objects such as particles between an electrostatic chuck and the glass substrate, is suppressed.A process for producing an EUV mask blank wherein an electrostatic chuck for clamping a glass substrate has a main body and a lower dielectric layer made of an organic polymer film, and electrode portion made of an electrically conductive material and an upper dielectric layer made of an organic polymer film provided in this order on the main body, wherein the upper dielectric layer includes an anode and a cathode.
摘要:
Two electrodes are provided in a processing container so as to be opposed to each other. Main etching processing gases of Cl2 and BCl3 are introduced into the processing container, and a deposition-type gas composed by least two of C, H, and F, such as a CHF3 gas or a CF4 gas, is added thereto. A plasma is generated by applying a pulse-modulated high-frequency voltage between the two electrodes that hold a sample to be etched. The sample is etched by using the plasma.
摘要:
A glass substrate-holding tool employed during the production of a reflective mask blank for EUV lithography includes an electrostatic chuck and a mechanical chuck. A caught and held portion of a glass substrate caught and held by the electrostatic chuck, and pressed portions of the glass substrate pressed by the mechanical chuck are located outside a quality-guaranteed region on each of a film deposition surface and a rear surface of the glass substrate. The sum of a catching and holding force applied to the glass substrate by the electrostatic chuck and a holding force applied to the glass substrate by the mechanical chuck is at least 200 kgf. A pressing force per unit area applied to the glass substrate by the mechanical chuck is at most 25 kgf/mm2.
摘要:
A glass substrate-holding tool, adapted to be employed during the production of a reflective mask blank for EUV lithography (EUVL), includes an electrostatic chuck and a supporting member. The chuck attracts a rear surface of a glass substrate in a non-contact manner by electrostatic attractive force. The supporting member partly supports the rear surface. An area ratio of a projected area of an active surface of the chuck for providing the electrostatic force to an area of a quality-guaranteed region of the rear surface is from 0.5 to 1.0. The active surface is apart from the rear surface by more than 20 μm. The supporting member is configured to support only a region including at least two of four sides defining an outer portion outside the quality-guaranteed region.
摘要:
A device for examining an end part according to the present invention includes a light projecting portion, a light receiving portion, a displacement sensor amplifier, and a data processing apparatus. The light projecting portion projects light on the end part of a semiconductor wafer. The light receiving portion receives specular reflected light reflected from the end part of the semiconductor wafer. The displacement sensor amplifier and the data processing apparatus calculate the displacement amount of the end part of the semiconductor wafer by a change in the distribution of the quantity of the specular reflected light received by the light receiving portion. Thus, the device for examining an end part can be reduced in size and simplified. Additionally, the device for examining an end part can be obtained, with which a change of the material of the end part of a measurement target is hardly detected as defects falsely.
摘要:
A defect inspecting device for a wafer is built in a positioning device for positioning a wafer 1, as a substrate to be processed, in a semiconductor manufacturing process. Light is irradiated on the wafer held on a vacuum holding base 2 while rotating the wafer at least one rotation from a position where the wafer is positioned and the scattered light is received. An operation unit 14 and a control unit 15 judge that if the intensity of the scattered light exceeds a predetermined threshold, a defect is detected on the wafer 1.