公开(公告)号：US20050024630A1

公开(公告)日：2005-02-03

申请号：US10833038

申请日：2004-04-28

申请人： Toshiki Ohno ,  Hirotoshi Ise ,  Masato Toyota ,  Toshio Komemura ,  Hidefumi Sakita ,  Suekazu Nakashima ,  Koji Matsuda

发明人： Toshiki Ohno ,  Hirotoshi Ise ,  Masato Toyota ,  Toshio Komemura ,  Hidefumi Sakita ,  Suekazu Nakashima ,  Koji Matsuda

IPC分类号： G01B11/00 ,  G01N21/89 ,  G01N21/95 ,  H01L21/66 ,  G01N21/88

CPC分类号： G01N21/9503

摘要： A device for examining an end part according to the present invention includes a light projecting portion, a light receiving portion, a displacement sensor amplifier, and a data processing apparatus. The light projecting portion projects light on the end part of a semiconductor wafer. The light receiving portion receives specular reflected light reflected from the end part of the semiconductor wafer. The displacement sensor amplifier and the data processing apparatus calculate the displacement amount of the end part of the semiconductor wafer by a change in the distribution of the quantity of the specular reflected light received by the light receiving portion. Thus, the device for examining an end part can be reduced in size and simplified. Additionally, the device for examining an end part can be obtained, with which a change of the material of the end part of a measurement target is hardly detected as defects falsely.

摘要翻译： 根据本发明的用于检查端部的装置包括光投射部分，光接收部分，位移传感器放大器和数据处理装置。 光投射部分在半导体晶片的端部上投射光。 光接收部分接收从半导体晶片的端部反射的镜面反射光。 位移传感器放大器和数据处理装置通过光接收部分接收的镜面反射光量的分布变化来计算半导体晶片的端部的位移量。 因此，用于检查端部的装置可以减小尺寸并简化。 此外，可以获得用于检查端部的装置，由此几乎不能将测量对象的端部的材料的变化几乎不被错误地检测为缺陷。

公开(公告)号：US06768542B2

公开(公告)日：2004-07-27

申请号：US10219292

申请日：2002-08-16

申请人： Hirotoshi Ise ,  Toshiki Oono ,  Yasuhiro Kimura ,  Toshio Komemura ,  Masato Toyota ,  Toshihiko Noguchi

发明人： Hirotoshi Ise ,  Toshiki Oono ,  Yasuhiro Kimura ,  Toshio Komemura ,  Masato Toyota ,  Toshihiko Noguchi

IPC分类号： G01N2100

CPC分类号： G01N21/9501 ,  G01N21/9503

摘要： A defect inspecting device for a wafer is built in a positioning device for positioning a wafer 1, as a substrate to be processed, in a semiconductor manufacturing process. Light is irradiated on the wafer held on a vacuum holding base 2 while rotating the wafer at least one rotation from a position where the wafer is positioned and the scattered light is received. An operation unit 14 and a control unit 15 judge that if the intensity of the scattered light exceeds a predetermined threshold, a defect is detected on the wafer 1.

摘要翻译： 用于晶片的缺陷检查装置内置在用于在半导体制造工艺中定位作为待处理基板的晶片1的定位装置中。 在保持在真空保持基座2上的晶片上照射光从晶片定位位置和接收散射光的位置旋转至少一个旋转晶片。 操作单元14和控制单元15判断如果散射光的强度超过预定阈值，则在晶片1上检测到缺陷。

公开(公告)号：US5679204A

公开(公告)日：1997-10-21

申请号：US621527

申请日：1996-03-25

申请人： Masayuki Kobayashi ,  Kiyoshi Maeda ,  Masato Toyota ,  Hiroshi Ohnishi ,  Hiroshi Tanaka ,  Toshio Komemura ,  Tamio Matsumura

发明人： Masayuki Kobayashi ,  Kiyoshi Maeda ,  Masato Toyota ,  Hiroshi Ohnishi ,  Hiroshi Tanaka ,  Toshio Komemura ,  Tamio Matsumura

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00

CPC分类号： H01J37/32477 ,  H01J37/32559

摘要： Components such as an earth plate, a gas introduction ring, and the like placed in a reaction chamber in a plasma apparatus are made of aluminum containing magnesium in a concentration of 2.2 to 2.8% by weight and are not coated with alumite. In addition, a heater incorporated in a section of the reaction chamber heats the section during a plasma cleaning process. Further, an electrical discharge chamber is also incorporated in the plasma apparatus for providing a plasma to the reaction chamber for efficient plasma cleaning of the apparatus.

摘要翻译： 在等离子体装置中放置在反应室中的诸如接地板，气体引入环等的部件由含有2.2至2.8重量％的镁的铝制成，并且未涂覆有耐氧化铝。 此外，加入到反应室的一部分中的加热器在等离子体清洗过程中加热该部分。 此外，在等离子体装置中还并入放电室，用于向反应室提供等离子体，用于对装置进行有效的等离子体清洗。

公开(公告)号：US4775085A

公开(公告)日：1988-10-04

申请号：US914865

申请日：1986-10-02

申请人： Masahiro Ishizuka ,  Toshio Komemura ,  Ichiro Hayashi

发明人： Masahiro Ishizuka ,  Toshio Komemura ,  Ichiro Hayashi

IPC分类号： H01L21/67 ,  B26F3/00 ,  B28D5/00 ,  H01L21/00 ,  H01L21/301 ,  H01L21/687

CPC分类号： H01L21/67092 ,  B26F3/002 ,  B28D5/0029 ,  B28D5/0052 ,  H01L2221/68322 ,  Y10T225/30 ,  Y10T225/371 ,  Y10T225/386

摘要： A semi-full cut semiconductor wafer is put on an adhesive sheet attached to a ring frame. Then, the semiconductor wafer is pushed upward from the back surface of the adhesive sheet by a rotatable breaking member in the shape of a disk the edge portion of which is triangular in section. In this state, the ring frame is moved so that the breaking member may not deviate from dicing lines, whereby the semiconductor wafer is divided into a large number of chips.

摘要翻译： 将半全切半导体晶片放置在附接到环形框架上的粘合片上。 然后，将半导体晶片从其粘合片的背面向上方推出，该可旋转的断开部件是其边缘部分为三角形的圆盘形状。 在这种状态下，移动环形框架使得断开构件不会偏离切割线，由此半导体晶片被分成大量的芯片。

公开(公告)号：US06648128B2

公开(公告)日：2003-11-18

申请号：US10133740

申请日：2002-04-29

申请人： Toshihiro Yamashita ,  Toshio Komemura ,  Toshihiko Noguchi

发明人： Toshihiro Yamashita ,  Toshio Komemura ,  Toshihiko Noguchi

IPC分类号： B65G1724

CPC分类号： H01L21/67706

摘要： A conveyor is provided that is capable of preventing degradation in quality of an article being conveyed. The conveyor includes a conveyor belt; and a rolling element rotatably provided at a surface of the conveyor belt. A plurality of rolling elements are provided along a conveying direction. The conveyor further includes a holder provided at the surface of the conveyor belt, for rotatably holding the corresponding rolling element. The rolling element has a ball shape.

公开(公告)号：US6054016A

公开(公告)日：2000-04-25

申请号：US31706

申请日：1998-02-27

申请人： Mutumi Tuda ,  Kouichi Ono ,  Masaaki Tsuchihashi ,  Minoru Hanazaki ,  Toshio Komemura ,  Kouji Oku ,  Shinji Nakaguma

发明人： Mutumi Tuda ,  Kouichi Ono ,  Masaaki Tsuchihashi ,  Minoru Hanazaki ,  Toshio Komemura ,  Kouji Oku ,  Shinji Nakaguma

IPC分类号： H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46 ,  C23F1/02 ,  C23C16/00

CPC分类号： H01J37/3222 ,  H01J37/32192 ,  H01J37/32688 ,  H05H1/46

摘要： There is provided a plasma generating apparatus comprising: a waveguide for guiding a microwave; a vacuum vessel connected to the waveguide, having a means for supplying a gas for discharging electrons and a means for evacuating; and a dielectric member in a tube-like shape or a rod-like shape which is inserted in the vacuum vessel, wherein the dielectric member is provided with a means for emitting the microwave, whereby it is possible to apply the electric power of microwave effectively to plasma of high density exceeding so-called cut-off density and to homogenize the distribution of plasma in the vacuum vessel.

摘要翻译： 提供了一种等离子体产生装置，包括：用于引导微波的波导; 连接到波导的真空容器，具有用于提供用于排出电子的气体的装置和用于排空的装置; 以及插入真空容器中的管状或棒状形状的电介质构件，其中，电介质构件设置有用于发射微波的装置，由此可以有效地施加微波的电力 到高密度的等离子体超过所谓的截止密度并使真空容器中的等离子体的分布均匀化。

公开(公告)号：US06929712B2

公开(公告)日：2005-08-16

申请号：US10235783

申请日：2002-09-06

申请人： Minoru Hanazaki ,  Keiichi Sugahara ,  Toshihiko Noguchi ,  Toshio Komemura ,  Masakazu Taki ,  Mutumi Tuda ,  Kenji Shintani

发明人： Minoru Hanazaki ,  Keiichi Sugahara ,  Toshihiko Noguchi ,  Toshio Komemura ,  Masakazu Taki ,  Mutumi Tuda ,  Kenji Shintani

IPC分类号： H05H1/00 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/46 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01J37/32082 ,  H01J37/32935

摘要： A high-frequency current detector of a plasma processing apparatus detects a high-frequency current produced when high-frequency power in the range that does not cause generation of plasma in a chamber is supplied from a high-frequency power supply source to the chamber. The high-frequency current detector outputs the detected high-frequency current to a computer. The computer compares the high-frequency current received from the high-frequency current detector with a reference high-frequency current. When the received high-frequency current matches the reference high-frequency current, the computer determines that the process performance is normal. Otherwise, the computer determines that the process performance is abnormal. In this way, high-frequency characteristics specific to the apparatus are detected and the process performance are evaluated based on the detected high-frequency characteristics.

摘要翻译： 等离子体处理装置的高频电流检测器检测从高频电源向腔室供给不在室内产生等离子体的范围内的高频电力时产生的高频电流。 高频电流检测器将检测到的高频电流输出到计算机。 计算机将从高频电流检测器接收的高频电流与参考高频电流进行比较。 当接收的高频电流与参考高频电流相匹配时，计算机确定处理性能正常。 否则，计算机会确定进程性能异常。 以这种方式，检测到对装置特有的高频特性，并且基于检测到的高频特性来评估处理性能。

公开(公告)号：US06347655B1

公开(公告)日：2002-02-19

申请号：US09548964

申请日：2000-04-13

申请人： Masahiko Yamamoto ,  Masahiro Ishitsuka ,  Toshio Komemura

发明人： Masahiko Yamamoto ,  Masahiro Ishitsuka ,  Toshio Komemura

IPC分类号： B32B3100

CPC分类号： H01L21/67144 ,  H01L21/67132 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/83192 ,  H01L2924/181 ,  Y10T156/1705 ,  H01L2924/00

摘要： A strap-like layered resin film (4) having the same width as a semiconductor chip (2) is cut out from a layered resin film (4F) and pressurized while being heated to the temperature below the transition temperature of a resin ribbon (4b), to be bonded onto a predetermined region (1R) of a lead frame (1). Subsequently, removing a cover ribbon (4a) of non-stickiness from the film (4), the semiconductor chip (2) is bonded to the predetermined region (1R) with the resin ribbon (4b) of stickiness heated to about the transition temperature, and further pressurized. With this structure, in bonding the lead frame and the semiconductor chip with the resin film as a bonding material, it is possible to prevent emergence of a void caused by sucking air and extending-off of the bonding material.

摘要翻译： 从层叠树脂膜（4F）切出具有与半导体芯片（2）相同宽度的带状分层树脂膜（4），并加热到低于树脂带（4b）的转变温度的温度 ）被接合到引线框架（1）的预定区域（1R）上。 随后，从胶片（4）上取出不粘的覆盖带（4a），将半导体芯片（2）粘结到预定区域（1R）上，将粘性树脂带（4b）加热到约转变温度 ，进一步加压。 利用这种结构，在将引线框架和半导体芯片与树脂膜接合作为接合材料的情况下，可以防止由吸引空气引起的空隙和接合材料的延伸而出现。

公开(公告)号：US6109208A

公开(公告)日：2000-08-29

申请号：US122061

申请日：1998-07-27

申请人： Masaaki Tsuchihashi ,  Minoru Hanazaki ,  Toshio Komemura ,  Mutumi Tuda ,  Kouichi Ono ,  Kouji Oku ,  Shinji Nakaguma

发明人： Masaaki Tsuchihashi ,  Minoru Hanazaki ,  Toshio Komemura ,  Mutumi Tuda ,  Kouichi Ono ,  Kouji Oku ,  Shinji Nakaguma

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  C23C14/00 ,  C23C16/00 ,  C23F1/02

CPC分类号： H01J37/3222 ,  H01J37/32192

摘要： A plasma generating apparatus capable of improving the uniformity of a plasma processing and coping with a larger diameter of a substrate is obtained. Microwaves are distributed and emitted from a waveguide through the branching portions of a T branch to four rod antennas. The microwaves are introduced through four dielectric tubes into a vacuum vessel. In the vacuum vessel, a multi-cusp magnetic field and an electron cyclotron resonance region are caused by permanent magnets located around the vessel and, by an interaction between a vibrational electric field of the microwaves and a magnetic field, highly uniform plasma is generated in a region where a substrate or the like is subjected to a plasma processing.

摘要翻译： 可以获得能够提高等离子体处理的均匀性并应对基板的较大直径的等离子体产生装置。 微波从波导通过T分支的分支部分分布并发射到四个棒状天线。 微波通过四个电介质导入真空容器中。 在真空容器中，多尖点磁场和电子回旋共振区域由位于容器周围的永磁体引起，并且通过微波的振动电场与磁场之间的相互作用，产生高度均匀的等离子体 对基板等进行等离子体处理的区域。