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    Semiconductor wafer cleaning apparatus
    3.
    发明授权
    Semiconductor wafer cleaning apparatus 失效
    SEMICONDUCTOR WAFER CLEANING APPARATUS

    公开(公告)号：US5196034A

    公开(公告)日：1993-03-23

    申请号：US737666

    申请日：1991-07-30

    申请人： Toshiki Ono ,  Shiro Yamasaki ,  Toshihiko Noguchi

    发明人： Toshiki Ono ,  Shiro Yamasaki ,  Toshihiko Noguchi

    IPC分类号： H01L21/304 ,  H01L21/00

    CPC分类号： H01L21/67028 ,  Y10T29/41

    摘要： A semiconductor wafer cleaning apparatus provided with an ice making unit and a jet nozzle for ejecting fine ice particles against a wafer held within a cleaning vessel includes an exhaust chamber having an expanded portion and connected to the cleaning vessel. Curved guide plates extend from cleaning vessel into the exhaust chamber equidistant from each other into the expanded portion to guide the jet particles into the expanded portion. A flow regulator plate having a multitude of inverted frustum-shaped tapered holes regulates the jetted particles within the cleaning bath in accordance with the downward flow direction. Further, the upward flow from the exhaust chamber along the side walls is caught by stopper plates and exhausted via exhaust ports.

    摘要翻译： 设置有制冰单元和喷射喷嘴的半导体晶片清洁设备包括具有扩展部分并连接到清洁容器的排气室，所述制冷单元和喷嘴用于将保存在清洁容器内的晶片喷射到精细冰颗粒。 弯曲的引导板从清洁容器延伸到排放室中，彼此等距离地放入扩展部分中，以将射流颗粒引导到扩展部分中。 具有多个反向截头锥形锥形孔的流量调节板根据向下流动方向调节清洗槽内的喷射颗粒。 此外，从排气室沿着侧壁的向上流动被止动板卡住，并通过排气口排出。

    Plasma processing apparatus capable of evaluating process performance
    5.
    发明授权
    Plasma processing apparatus capable of evaluating process performance 失效
    能够评估工艺性能的等离子体处理装置

    公开(公告)号：US06929712B2

    公开(公告)日：2005-08-16

    申请号：US10235783

    申请日：2002-09-06

    申请人： Minoru Hanazaki ,  Keiichi Sugahara ,  Toshihiko Noguchi ,  Toshio Komemura ,  Masakazu Taki ,  Mutumi Tuda ,  Kenji Shintani

    发明人： Minoru Hanazaki ,  Keiichi Sugahara ,  Toshihiko Noguchi ,  Toshio Komemura ,  Masakazu Taki ,  Mutumi Tuda ,  Kenji Shintani

    IPC分类号： H05H1/00 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/46 ,  H01L21/00 ,  C23C16/00

    CPC分类号： H01J37/32082 ,  H01J37/32935

    摘要： A high-frequency current detector of a plasma processing apparatus detects a high-frequency current produced when high-frequency power in the range that does not cause generation of plasma in a chamber is supplied from a high-frequency power supply source to the chamber. The high-frequency current detector outputs the detected high-frequency current to a computer. The computer compares the high-frequency current received from the high-frequency current detector with a reference high-frequency current. When the received high-frequency current matches the reference high-frequency current, the computer determines that the process performance is normal. Otherwise, the computer determines that the process performance is abnormal. In this way, high-frequency characteristics specific to the apparatus are detected and the process performance are evaluated based on the detected high-frequency characteristics.

    摘要翻译： 等离子体处理装置的高频电流检测器检测从高频电源向腔室供给不在室内产生等离子体的范围内的高频电力时产生的高频电流。 高频电流检测器将检测到的高频电流输出到计算机。 计算机将从高频电流检测器接收的高频电流与参考高频电流进行比较。 当接收的高频电流与参考高频电流相匹配时，计算机确定处理性能正常。 否则，计算机会确定进程性能异常。 以这种方式，检测到对装置特有的高频特性，并且基于检测到的高频特性来评估处理性能。