摘要:
To provide a manufacturing method of the semiconductor IC device having fine-structure connecting holes or trenches with high dimensional precision. There is the following step of the operation: a hook-shaped hard mask made of polysilicon film 18 and polysilicon film 20a is formed on the surface of silica film 17 for forming connecting holes 21 accommodating plugs that perform an electrical connection with the lower portion of the lower electrode of the capacitor in the COB-type memory cells, with the hook-shaped hard mask being used as an etching mask in selective etching so as to form connecting holes 21 on silica film 17 and silica film 15 below it.
摘要:
A method for fabricating DRAMs each having a COB structure, and the semiconductor device formed by this method, are provided. In one embodiment, the word line and/or bit line is covered with an insulating film having a comparatively small etching rate. Contact holes are formed while being defined by those insulating films in self-alignment.
摘要:
If cylinder bores formed in a caliper parallel to each other are communicated together through a pipe casted in the caliper, the pipe tends to come out of the caliper into a cylinder bore. A separate short pipe is provided to communicate the cylinder bores. The pipe has an engaging portion so as to extend in a diametric direction of the short pipe to prevent longitudinal shift of the short pipe. The engaging portions can be provided easily by forming a recess or a protrusion on the outer periphery of the pipe and casting the pipe in the caliper.
摘要:
A controlling member (a controlling pin 10) is inserted through an insertion hole 7 of a mold 1 and projected into a cavity 6. After a pipe P as an insert member is arranged at a predetermined position in the cavity 6, the pipe P is held in the cavity 6 by inserting a tip of the controlling pin 10 into a hole h of the pipe P at the end p1, or by inserting the end p1 of the pipe P into a cave 21 of the controlling member. A molten aluminum alloy is then poured through a gate 5 into the cavity 6 under such the condition, to enclose the pipe P with the aluminum alloy. Dislocation of the pipe P caused by kinetic and thermal energies of the poured aluminum alloy is suppressed by the controlling pin 10 or block 20 at the end p1. Since the enclosed pipe P has its end p1 opened at a predetermined position, a cast product obtained in this way can be used as a brake caliper or the like having an inner hydraulic circuit.
摘要:
A heat exchanger comprising an outer tube, one or more inner tubes disposed with interstice within said outer tube, and a spiral element extending longitudinally within said inner tube(s). The spiral element is made up of a plurality of unit elements connected together with a connection angle of 0.degree.. Each of the unit elements has a twist angle of 180.degree., with the direction of twist being reversed from one to a neighboring unit element. Channeling phenomenon is effectively avoided. Heat exchange medium with Rheynolds number Re>10.sup.4 is suitable.
摘要:
A semiconductor device, such as a dynamic RAM, and method of making it. A number of stacked cell capacitors are placed at a prescribed spacing in an alignment direction on top of a p.sup.- -type silicon substrate (1). Each capacitor has a nearly perpendicular cylindrical lower electrode (cylindrical polysilicon layer (96)), a dielectric film (silicon nitride film (77)), and upper electrode (plate electrode (78) made of polysilicon). The spacing in the alignment direction is smaller than the inner diameter of the lower electrode.