公开(公告)号：US07301517B2

公开(公告)日：2007-11-27

申请号：US10434951

申请日：2003-05-08

申请人： Hiroyuki Hebiguchi ,  Akira Nakano ,  Yukimitsu Yamada

发明人： Hiroyuki Hebiguchi ,  Akira Nakano ,  Yukimitsu Yamada

IPC分类号： G09G3/36

CPC分类号： G09G3/3659 ,  G09G3/3648 ,  G09G2300/0452 ,  G09G2300/0809 ,  G09G2310/0227 ,  G09G2330/021

摘要： In a liquid-crystal display apparatus, each color pixel has three dots enclosed by adjacent signal lines and adjacent scanning lines. Each dot is provided with a switching device and a dot electrode. Each color pixel is provided with three display electrodes electrically connected to three dot electrodes through contact holes passing through an insulation layer. The display electrodes are disposed so as to overlap with the three dot electrodes. Each of the display electrodes is electrically connected to only one of the three dot electrodes. Each of the dot electrodes is electrically connected to only one of the display electrodes.

摘要翻译： 在液晶显示装置中，每个彩色像素具有由相邻信号线和相邻的扫描线包围的三个点。 每个点设置有开关装置和点电极。 每个彩色像素设置有通过穿过绝缘层的接触孔电连接到三个点电极的三个显示电极。 显示电极配置成与三个点电极重叠。 每个显示电极仅电连接到三个点电极中的一个。 每个点电极仅电连接到一个显示电极。

公开(公告)号：US5837559A

公开(公告)日：1998-11-17

申请号：US745904

申请日：1996-11-07

申请人： Ken Kawahata ,  Akira Nakano ,  Hirofumi Fukui ,  Hiroyuki Hebiguchi ,  Kenji Yamamoto ,  Chisato Iwasaki

发明人： Ken Kawahata ,  Akira Nakano ,  Hirofumi Fukui ,  Hiroyuki Hebiguchi ,  Kenji Yamamoto ,  Chisato Iwasaki

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L27/1214

摘要： A method for producing an electro-optical device comprising a first photolithographic step of forming a transparent pixel electrode, a second photolithographic of forming a gate electrode and a gate wiring, a third photolithographic step of forming a contact holes in an insulator film leading to the pixel electrode and the gate wiring, a fourth photolithographic step of forming a source electrode and a drain electrode and a channel portion above the gate electrode, and a fifth photolithographic step of forming a contact hole in a passivation film and isolating the semiconductor active film below the source electrode, the drain electrode and the source wiring from other adjacent portions. The number of photolithographic steps can be reduced, to improve the yield and decrease the production cost, adjacent thin film transistors.

摘要翻译： 一种用于制造电光装置的方法，包括形成透明像素电极的第一光刻步骤，形成栅电极的第二光刻和栅极布线;第三光刻步骤，在导致所述绝缘膜的绝缘膜中形成接触孔 像素电极和栅极布线;在栅电极上方形成源电极和漏电极以及沟道部分的第四光刻步骤，以及在钝化膜中形成接触孔并将半导体活性膜隔离在第五光刻步骤的第五光刻步骤 源电极，漏电极和源极布线。 可以减少光刻步骤的数量，以提高相邻薄膜晶体管的产量并降低生产成本。

公开(公告)号：US5726077A

公开(公告)日：1998-03-10

申请号：US459925

申请日：1995-06-02

申请人： Ken Kawahata ,  Akira Nakano ,  Hirofumi Fukui ,  Hiroyuki Hebiguchi ,  Kenji Yamamoto ,  Chisato Iwasaki

发明人： Ken Kawahata ,  Akira Nakano ,  Hirofumi Fukui ,  Hiroyuki Hebiguchi ,  Kenji Yamamoto ,  Chisato Iwasaki

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L27/1214

摘要： A method for producing an electo-optical device including only five photolithographic steps, including a first photolithographic step for forming a gate electrode and gate wiring, a second photolithographic step for forming a semiconductor portion above the gate electrode, a third photolithographic step for forming a contact hole through the first insulator film to the gate wiring, a fourth photolithographic step for forming a source electrode, a source wiring and a drain electrode and then forming a channel portion above the gate electrode exposing said semiconductor active film and forming a transparent pixel electrode, and a fifth photolithographic step for forming a light-permeable opening above the transparent pixel electrode, and a contact hole for source wiring and gate wiring connection terminals.

摘要翻译： 一种用于制造仅包括五个光刻步骤的电光器件的方法，包括用于形成栅电极和栅极布线的第一光刻步骤，用于在栅电极上形成半导体部分的第二光刻步骤，用于形成栅电极的第三光刻步骤 接触孔穿过第一绝缘膜到栅极布线，第四光刻步骤，用于形成源电极，源极布线和漏极，然后在栅电极上方形成通道，暴露所述半导体有源膜并形成透明像素电极 以及用于在透明像素电极上方形成透光性开口的第五光刻工序，以及用于源极配线和栅极配线连接端子的接触孔。

公开(公告)号：US5879958A

公开(公告)日：1999-03-09

申请号：US745933

申请日：1996-11-07

申请人： Ken Kawahata ,  Akira Nakano ,  Hirofumi Fukui ,  Hiroyuki Hebiguchi ,  Kenji Yamamoto ,  Chisato Iwasaki

发明人： Ken Kawahata ,  Akira Nakano ,  Hirofumi Fukui ,  Hiroyuki Hebiguchi ,  Kenji Yamamoto ,  Chisato Iwasaki

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L27/1214

摘要： A method for producing an electro-optical device comprising a first photolithographic step of forming a transparent pixel electrode, a second photolithographic of forming a gate electrode and a gate wiring, a third photolithographic step of forming a contact holes in an insulator film leading to the pixel electrode and the gate wiring, a fourth photolithographic step of forming a source electrode and a drain electrode and a channel portion above the gate electrode, and a fifth photolithographic step of forming a contact hole in a passivation film and isolating the semiconductor active film below the source electrode, the drain electrode and the source wiring from other adjacent portions.The number of photolithographic steps can be reduced, to improve the yield and decrease the production cost adjacent thin film transistors.

摘要翻译： 一种用于制造电光装置的方法，包括形成透明像素电极的第一光刻步骤，形成栅电极的第二光刻和栅极布线;第三光刻步骤，在导致所述绝缘膜的绝缘膜中形成接触孔 像素电极和栅极布线;在栅电极上方形成源电极和漏电极以及沟道部分的第四光刻步骤，以及在钝化膜中形成接触孔并将半导体活性膜隔离在第五光刻步骤的第五光刻步骤 源电极，漏电极和源极布线。 可以减少光刻步骤的数量，以提高相邻薄膜晶体管的产量并降低生产成本。

公开(公告)号：US5869351A

公开(公告)日：1999-02-09

申请号：US745017

申请日：1996-11-07

申请人： Ken Kawahata ,  Akira Nakano ,  Hirofumi Fukui ,  Hiroyuki Hebiguchi ,  Kenji Yamamoto ,  Chisato Iwasaki

发明人： Ken Kawahata ,  Akira Nakano ,  Hirofumi Fukui ,  Hiroyuki Hebiguchi ,  Kenji Yamamoto ,  Chisato Iwasaki

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L27/1214

摘要： A method for producing an electro-optical device comprising a first photolithographic step of forming a transparent pixel electrode, a second photolithographic of forming a gate electrode and a gate wiring, a third photolithographic step of forming a contact holes in an insulator film leading to the pixel electrode and the gate wiring, a fourth photolithographic step of forming a source electrode and a drain electrode and a channel portion above the gate electrode, and a fifth photolithographic step of forming a contact hole in a passivation film and isolating the semi-conductor active film below the source electrode, the drain electrode and the source wiring from other adjacent portions.The number of photolithographic steps can be reduced, to improve the yield and decrease the production cost adjacent thin film transistors.

摘要翻译： 一种用于制造电光装置的方法，包括形成透明像素电极的第一光刻步骤，形成栅电极的第二光刻和栅极布线;第三光刻步骤，在导致所述绝缘膜的绝缘膜中形成接触孔 像素电极和栅极布线;在栅电极上形成源电极和漏电极以及沟道部分的第四光刻步骤，以及在钝化膜中形成接触孔并隔离半导体活性物质的第五光刻步骤 薄膜下面的源电极，漏电极和源极布线与其他相邻部分。 可以减少光刻步骤的数量，以提高相邻薄膜晶体管的产量并降低生产成本。

公开(公告)号：US10764495B2

公开(公告)日：2020-09-01

申请号：US16217536

申请日：2018-12-12

申请人： Hiroyasu Uehara ,  Masakazu Terauchi ,  Masashi Miyata ,  Hiroshi Kano ,  Akira Nakano ,  Takeyoshi Nishimura

发明人： Hiroyasu Uehara ,  Masakazu Terauchi ,  Masashi Miyata ,  Hiroshi Kano ,  Akira Nakano ,  Takeyoshi Nishimura

IPC分类号： H04N5/262 ,  H04N5/232 ,  H04N5/347 ,  H04N5/349

摘要： An image processing apparatus includes processing circuitry. The processing circuitry is configured to detect a positional shift amount of each of a plurality of images; select a composite target image from the plurality of images based on the detected positional shift amount; and obtain a composite image based on the positional shift amount and the selected composite target image.

公开(公告)号：US09019387B2

公开(公告)日：2015-04-28

申请号：US13413946

申请日：2012-03-07

申请人： Akira Nakano

发明人： Akira Nakano

IPC分类号： H04N5/232 ,  G06T5/50

CPC分类号： H04N5/23277 ,  G06T5/50 ,  G06T2207/10024 ,  G06T2207/20008 ,  G06T2207/20221 ,  G06T2207/30201 ,  H04N5/23219 ,  H04N5/23254

摘要： An imaging device including an image sensor, includes an image obtaining control unit that obtains plural continuous images of an object taken by the image sensor; a size determining unit that determines an image size of reduced images based on photographing information of at least one of the images, and generates reduced images from the images obtained by the image obtaining control unit based on the determined image size; a motion vector detection unit that detects a motion vector of the reduced images; and an image synthesis unit that synthesizes the images obtained by the image obtaining control unit based on the motion vector detected by the motion vector detection unit to obtain a synthesized image.

摘要翻译： 一种包括图像传感器的成像装置，包括图像获取控制单元，其获得由图像传感器拍摄的对象的多个连续图像; 尺寸确定单元，其基于至少一个图像的拍摄信息确定缩小图像的图像尺寸，并且基于所确定的图像大小从由图像获取控制单元获得的图像生成缩小图像; 运动矢量检测单元，其检测所述缩小图像的运动矢量; 以及图像合成单元，其基于由运动矢量检测单元检测到的运动矢量来合成由图像获取控制单元获得的图像，以获得合成图像。

公开(公告)号：US07805901B2

公开(公告)日：2010-10-05

申请号：US11666489

申请日：2005-10-24

申请人： Muneto Yamada ,  Kazutaka Uekado ,  Akira Nakano

发明人： Muneto Yamada ,  Kazutaka Uekado ,  Akira Nakano

IPC分类号： E04B1/74

CPC分类号： E04B1/78 ,  E04B1/76 ,  E04B1/803 ,  E04B2001/742 ,  Y02A30/242 ,  Y02B80/12

摘要： The present invention provides a building to be constructed without any troublesome work.The building is a building comprising a construction material 12, which has a plane heat insulation material 14 in which a madreporic core material is enclosed in a vacuum and a plate structural face material 12a, and whose heat insulation material 14 and structural face material 12a are combined in a way that a plane surface of the heat insulation material 14 faces to one side of a plane surface of the structural face material 12a, and further comprising a wooden base 9b assembled on the construction material 12 and an external wall finishing material 3 fixed on the wooden base 9b.

摘要翻译： 本发明提供一种建筑物，而不需要任何麻烦的工作。 该建筑是一种建筑物，其包括建筑材料12，该建筑材料12具有平面绝热材料14，绝热材料14和结构面材料12a在真空中封闭有空心芯材和板结构面材料12a 以隔热材料14的平面表面朝向结构面材12a的平面的一侧的方式组合，并且还包括组装在建筑材料12上的木制底座9b和固定的外墙装饰材料3 在木制基座9b上。

公开(公告)号：US07316125B2

公开(公告)日：2008-01-08

申请号：US10479208

申请日：2002-05-31

申请人： Kazutaka Uekado ,  Masato Sasaki ,  Akira Nakano ,  Yoshiki Ohashi

发明人： Kazutaka Uekado ,  Masato Sasaki ,  Akira Nakano ,  Yoshiki Ohashi

IPC分类号： F25D11/02

CPC分类号： F25D23/062 ,  F25D2201/126 ,  F25D2201/14 ,  F25D2400/04

摘要： An insulation box unit and a refrigerator of the present invention employs i) rigid urethane foam with a 8.0 MPa-or-greater bending modulus, and a 60 kg/m3-or-lower density, and ii) a vacuum insulation material. The proper bending modulus provides the insulation box unit with a substantial strength, even in the case that the coverage of the vacuum insulation material with respect to the surface of the outer box exceeds 40%. The proper density prevents the insulation box unit from poor insulation efficiency due to undesired solid thermal conductivity. Despite of an extended use of the vacuum insulation material, the insulation box unit offers an excellent insulation efficiency and therefore accelerates energy saving. According to the recycling method of the present invention, rigid urethane foam formed of tolylene di-isocyanate composition, which was separated from refrigerator wastes, is recycled as a material of rigid urethane foam.

摘要翻译： 本发明的绝缘箱单元和冰箱采用i）具有8.0MPa或更大弯曲模量和60kg / m 3以上低密度的硬质聚氨酯泡沫，ii ）真空绝缘材料。 即使在真空绝热材料相对于外箱表面的覆盖范围超过40％的情况下，适当的弯曲模量也提供了具有相当强度的绝缘箱单元。 适当的密度防止绝缘箱单元由于不期望的固体导热性而具有差的绝缘效率。 尽管绝缘材料的使用得到了广泛的应用，绝缘箱单元提供了绝佳的绝缘效率，从而加速了节能。 根据本发明的再循环方法，将与冰箱废物分离的甲苯二异氰酸酯组合物形成的硬质聚氨酯泡沫作为刚性聚氨酯泡沫材料进行再循环。

公开(公告)号：US07225754B2

公开(公告)日：2007-06-05

申请号：US10811034

申请日：2004-08-27

申请人： Akira Nakano ,  Tadahiro Ohmi

发明人： Akira Nakano ,  Tadahiro Ohmi

IPC分类号： C23C16/00

CPC分类号： H01L22/20 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/32082 ,  H01L2924/0002 ,  H01L2924/014 ,  H01L2924/00

摘要： A plasma processing apparatus comprising a plurality of plasma processing units is provided. Each of the plasma processing units has a matching circuit connected between a radiofrequency generator and a plasma excitation electrode. Among these plasma processing units, a variation between the maximum and minimum values of input-terminal-side AC resistances RA of the matching circuits defined by =(RAmax−RAmin)/(RAmax+RAmin) is adjusted to be less than 0.5. A variation between the maximum and minimum values of output-terminal-side AC resistances RB of the matching circuits defined by =(RBmax−RBmin)/(RBmax+RBmin) is also adjusted to be less than 0.5. The plasma processing units can be adjusted to achieve substantially uniform plasma results in a shorter period of time.

摘要翻译： 提供了包括多个等离子体处理单元的等离子体处理装置。 每个等离子体处理单元具有连接在射频发生器和等离子体激励电极之间的匹配电路。 在这些等离子体处理单元中，由＆lt; RA＆gt; -RA＆lt; SUB＆gt;定义的匹配电路的输入端侧AC电阻RA的最大值和最小值之间的变化值RA > min ）/（RA最大 + RA ）被调整为小于0.5。 匹配电路的输出端侧AC电阻RB的最大值和最小值之间的变化由 =（RB> max <-R> SUB> / RB + RB ）也被调整为小于0.5。 可以调节等离子体处理单元以在更短的时间内实现基本均匀的等离子体结果。